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1. 发明公开

EP0778625A2 Light-emitting diode having a surface electrode of a tree like form 失效
标题翻译：具有树形表面电极的发光二极管
公开(公告)号：EP0778625A2
公开(公告)日：1997-06-11
申请号：EP97102514.3
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面（330）上的表面电极（316）具有衬垫（318），并且还具有从衬垫（318）线性延伸的至少一阶分支（319a，...，319d），第二阶从一级分支（319a，...，319d）分叉并线性延伸的三级分支（320a，320b和320c）以及从一级分支（319a，...，319d）线性延伸的三级分支（322a，322b和320c）二阶分支（320a，320b和320c）。表面电极（316）中的焊盘（318）不与下面的半导体层（331）电接触，而表面电极（316）和半导体层（331）在端部处彼此电接触的最高阶分支（322a，322b和322c）。而且，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极（316）下面的无效光发射相对减少，从而可以改善外部量子效率，并且通过省略电流扩散层，甚至可以允许更短波长的光以高效率熄灭。

2. 发明授权

EP0311445B1 A semiconductor laser device and a method for the production of the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：EP0311445B1
公开(公告)日：1996-09-18
申请号：EP88309409.6
申请日：1988-10-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Taneya, Mototaka , Takahashi, Kosei , Hayakawa, Toshiro , Matsui, Sadayoshi , Matsumoto, Mitsuhiro , Hosoba, Hiroyuki
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/34 , H01S5/3432 , H01S5/4031

3. 发明授权

EP0469900B1 A method for the production of a semiconductor laser device 失效
标题翻译：一种用于制造半导体激光器的过程
公开(公告)号：EP0469900B1
公开(公告)日：1995-12-13
申请号：EP91307060.3
申请日：1991-08-01
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki
IPC分类号： H01L33/00 , H01S3/025
CPC分类号： H01S5/164 , H01L21/314 , H01S5/0202 , H01S5/0281 , H01S5/0282

4. 发明公开

EP0558856A3 A method for producing a semiconductor laser device 失效
标题翻译：一种生产半导体激光器件的方法
公开(公告)号：EP0558856A3
公开(公告)日：1993-12-29
申请号：EP92311823.6
申请日：1992-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Ohbayashi, Ken , Sasaki, Kazuaki , Yamamoto, Osamu , Matsumoto, Mitsuhiro
IPC分类号： H01S3/025
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming semiconductor window layers on either one of a top surface of an internal structure or a reverse surface of a substrate (10) and on light-emitting end facets (30A,30B) of the internal structure; forming a reflection film (34) on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming semiconductor window layers on light-emitting end facets of the bars (2); inserting the bars (2) into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars (2) and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars (2); and cutting the bars (2) into the chips.

5. 发明授权

EP0301846B1 Semiconductor laser array apparatus 失效
标题翻译：半导体激光阵列设备
公开(公告)号：EP0301846B1
公开(公告)日：1993-05-05
申请号：EP88306942.9
申请日：1988-07-28
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsui, Sadayoshi , Taneya, Mototaka , Matsumoto, Mitsuhiro , Hosoba, Hiroyuki
IPC分类号： H01S3/25
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/1028 , H01S5/1032

6. 发明公开

EP0395436A3 A semiconductor laser device, a semiconductor wafer, and a method for the production of the same 失效
标题翻译：半导体激光器件，半导体器件及其制造方法
公开(公告)号：EP0395436A3
公开(公告)日：1991-09-25
申请号：EP90304612.6
申请日：1990-04-27
申请人： SHARP KABUSHIKI KAISHA
发明人： Kondo, Masaki , Sasaki, Kazuaki, , Morimoto, Taiji , Matsumoto, Mitsuhiro , Hosoba, Hiroyuki, , Matsui, Sadayoshi , Yamamoto, Saburo, , Suyama, Takahiro, , Kondo, Masafumi
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel (10) formed in a semiconductor substrate (1) through a current blocking layer (2) on the substrate (1) and at least two dummy grooves (20) formed in the current blocking layer (2) on each side of the striped channel (10). Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate (1), the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions by an angle ϑ satisfying the relationship 0.1o

7. 发明授权

EP0270381B1 A semiconductor light-emitting apparatus 失效
标题翻译：半导体发光装置
公开(公告)号：EP0270381B1
公开(公告)日：1991-08-14
申请号：EP87310716.3
申请日：1987-12-04
申请人： SHARP KABUSHIKI KAISHA
发明人： Taneya, Mototaka , Matsumoto, Mitsuhiro , Matsui, Sadayoshi
IPC分类号： H01S3/25 , G02B6/10
CPC分类号： H01S5/14 , H01S5/4062

8. 发明公开

EP0395436A2 A semiconductor laser device, a semiconductor wafer, and a method for the production of the same 失效
标题翻译： Halbleiterlaser，Halbleiter-Wafer und Verfahren zur Herstellung derselben。
公开(公告)号：EP0395436A2
公开(公告)日：1990-10-31
申请号：EP90304612.6
申请日：1990-04-27
申请人： SHARP KABUSHIKI KAISHA
发明人： Kondo, Masaki , Sasaki, Kazuaki, , Morimoto, Taiji , Matsumoto, Mitsuhiro , Hosoba, Hiroyuki, , Matsui, Sadayoshi , Yamamoto, Saburo, , Suyama, Takahiro, , Kondo, Masafumi
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel (10) formed in a semiconductor substrate (1) through a current blocking layer (2) on the substrate (1) and at least two dummy grooves (20) formed in the current blocking layer (2) on each side of the striped channel (10). Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate (1), the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions by an angle ϑ satisfying the relationship 0.1o
摘要翻译：提供一种半导体激光器件和半导体激光器件的制造方法，该半导体激光器件包括通过衬底（1）上的电流阻挡层（2）形成在半导体衬底（1）中的条纹沟道（10））和形成在条形通道（10）的每一侧上的电流阻挡层（2）中的至少两个虚设槽（20）。还提供了制造用于制造具有光波导的光学器件的半导体晶片，以及用于制造半导体晶片的方法。半导体晶片包括其表面具有从[100]方向倾斜到[011]和[011]方向之一的方位的半导体衬底（1），角度θ满足关系式0.1o <|θ| <4o; 沿着[011]和[011]方向另一个方向通过电流阻挡层（2）在衬底（1）中形成的多个条纹沟道（10）以及形成在条形通道（10）之间的至少一个虚拟侧槽（30），其在与另一方向垂直的平面上的组合横截面积大于每个条纹通道的横截面积。

9. 发明公开

EP0174839A2 A semiconductor laser array device 失效
标题翻译：半导体激光器阵列装置。
公开(公告)号：EP0174839A2
公开(公告)日：1986-03-19
申请号：EP85306442.6
申请日：1985-09-11
申请人： SHARP KABUSHIKI KAISHA
发明人： Taneya, Mototaka , Matsui, Sadayoshi , Matsumoto, Mitsuhiro , Yamamoto, Saburo , Yano, Seiki
IPC分类号： H01S3/25 , H01S3/19
CPC分类号： H01S5/4031
摘要： A semiconductor laser array device comprises a plurality of index-guided lasing filaments (9) formed in an active layer (3) in a parallel manner, and an electrical current injection portion (17) formed on the upper face of grown layers, the profile of said electrical current injection portion being asymmetrical with respect to any line (110) which is parallel to the lasing filaments (9). The laser light obtained is limited to a single direction (103') since the laser array can only oscillate in one mode.

10. 发明公开

EP1283574A2 Semiconductor laser element 有权
标题翻译： Halbleiterlaserelement
公开(公告)号：EP1283574A2
公开(公告)日：2003-02-12
申请号：EP02013150.4
申请日：2002-06-14
申请人： Sharp Kabushiki Kaisha
发明人： Matsumoto, Mitsuhiro
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/222
摘要： There is provided a semiconductor laser element, which has a small capacitance outside a ridge portion and high response speed and is able to effect pulse oscillation with a satisfactory pulse waveform. On a GaAs substrate 101, there are provided an n-type buffer layer 102, an n-type first clad layer 103, an MQW active layer 104, a p-type second clad layer 105, a p-type etching stop layer 106 that has an energy bandgap smaller than that of this second clad layer 105, a p-type third clad layer 107 that constitutes a ridge portion and a p-type protective layer 108. On both sides in the widthwise direction of the ridge portion are laminated a p-type spacer layer 109, an n-type current light confining layer 110, an n-type current confining layer 111 and a p-type flattening layer 112. On these layers is laminated a p-type contact layer 113. A depletion layer spreads into the spacer layer 109 when a bias voltage is applied. Therefore, a capacitance between the spacer layer 109 and the current light confining layer 110 is reduced, and a response speed during the pulse oscillation of the semiconductor laser element becomes fast.
摘要翻译：提供了一种半导体激光元件，其在脊部外部具有小的电容并且响应速度高，并且能够以令人满意的脉冲波形来实现脉冲振荡。在GaAs衬底101上，设置有n型缓冲层102，n型第一覆盖层103，MQW有源层104，p型第二覆盖层105，p型蚀刻停止层106，p型蚀刻停止层106 具有小于该第二包层105的能量带隙，构成脊部的p型第三包层107和p型保护层108.在脊部的宽度方向的两侧层叠有 p型间隔层109，n型电流限制层110，n型电流限制层111和p型平坦化层112.在这些层上层叠有p型接触层113.耗尽层当施加偏置电压时，它们扩散到间隔层109中。因此，间隔层109和电流限制层110之间的电容减小，半导体激光元件的脉冲振荡期间的响应速度变快。

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