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1. 发明授权

EP0544512B1 Light-emitting diode having a surface electrode of a tree-like form 失效
标题翻译：一种发光二极管与所述表面电极网状
公开(公告)号：EP0544512B1
公开(公告)日：1998-09-02
申请号：EP92310770.0
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabo, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38

2. 发明公开

EP0559455A1 A semiconductor light emitting device 失效
标题翻译： Lichtemittierende Halbleitervorrichtung。
公开(公告)号：EP0559455A1
公开(公告)日：1993-09-08
申请号：EP93301623.0
申请日：1993-03-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Sasaki, Kazuaki , Nakatsu, Hiroshi , Yamamoto, Osamu , Watanabe, Masanori , Yamamoto, Saburo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device (10) which allows part of an active layer (13) to generate light by supplying current to the part of the active layer (13) is disclosed. The semiconductor light emitting device (10) includes: a semiconductor substrate (11) having upper and lower surface, the upper surface having a stepped portion (11a), the stepped portion (11a) dividing the upper surface into a least a first area and a second area; a current confining layer (20), formed on the upper surface of the substrate (11), the current confining layer (20) being discontinuous at the stepped portion (11a), the current flowing through an area between the first area and the second area of the substrate (11); a multilayer structure (12, 13, 14, 15) formed on the current confining layer (20), the multilayer structure (12, 13, 14, 15) including the active layer (13); a first electrode (17) which covers only part of an upper surface of the multilayer structure (12, 13, 14, 15); and a second electrode (18) formed over the lower surface of the substrate (11). In the semiconductor light emitting device, the light generated from the part of the active layer (13) is extracted to the outside through a portion of the upper surface of the multilayer structure (12, 13, 14, 15) which is not covered with the first electrode (17).
摘要翻译：公开了一种半导体发光器件（10），其通过向有源层（13）的一部分提供电流来允许有源层（13）的一部分产生光。半导体发光器件（10）包括：具有上表面和下表面的半导体衬底（11），上表面具有阶梯部分（11a），阶梯部分（11a）将上表面分成至少第一区域，第二个区域形成在所述基板（11）的上表面上的电流限制层（20），所述电流限制层（20）在所述阶梯部分（11a）处不连续，所述电流流过所述第一区域和所述第二区域之间的区域基板（11）的面积; 形成在电流限制层（20）上的多层结构（12,13,14,15），包括有源层（13）的多层结构（12,13,14,15）; 仅覆盖多层结构（12,13,14,15）的上表面的一部分的第一电极（17）; 以及形成在所述基板（11）的下表面上方的第二电极（18）。在半导体发光器件中，从有源层（13）的一部分产生的光通过未被覆盖的多层结构（12,13,14,15）的上表面的一部分提取到外部第一电极（17）。

3. 发明公开

EP0376753A3 A semiconductor laser device 失效
标题翻译：半导体激光装置
公开(公告)号：EP0376753A3
公开(公告)日：1991-01-23
申请号：EP89313704.2
申请日：1989-12-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Suyama, Takahiro , Kondo, Masafumi , Sasaki, Kazuaki , Hosoda Masahiro , Takahashi, Kosei A210 Excel Heights Tsurumai , Hayakawa, Toshiro
IPC分类号： H01S3/19 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/22 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate (1) and a multi-layered crystal structure disposed on the substrate (1), the multi-layered crystal structure containing a first cladding layer (3), a quantum-well active layer (5) for laser oscillation, and a second cladding layer (7) with a striped ridge portion (12) for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion (12) and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.
摘要翻译：公开了一种半导体激光装置，其包括半导体衬底（1）和设置在衬底（1）上的多层晶体结构，所述多层晶体结构包含第一包层（3），量子阱有源层（5）和具有用于电流注入的条纹状脊部分（12）的第二包层（7），其中条纹状脊部分（12）下面的区域与相邻区域之间的有效折射率之差其至少在一个小面附近比在小面内更大。

4. 发明授权

EP0627799B1 Semiconductor light-emitting device with third cladding layer 失效
标题翻译：与第三限制层Lichtmittierende半导体器件
公开(公告)号：EP0627799B1
公开(公告)日：1997-10-08
申请号：EP94303990.9
申请日：1994-06-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Sasaki, Kazuaki , Yamamoto, Osamu
IPC分类号： H01S3/19 , H01S3/085 , H01S3/25 , H01L21/20 , H01L33/00
CPC分类号： H01S5/2232 , H01L33/145 , H01S5/18352 , H01S5/2206 , H01S5/3202 , H01S5/32308 , H01S5/4031 , H01S2304/12

5. 发明公开

EP0778625A2 Light-emitting diode having a surface electrode of a tree like form 失效
标题翻译：具有树形表面电极的发光二极管
公开(公告)号：EP0778625A2
公开(公告)日：1997-06-11
申请号：EP97102514.3
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面（330）上的表面电极（316）具有衬垫（318），并且还具有从衬垫（318）线性延伸的至少一阶分支（319a，...，319d），第二阶从一级分支（319a，...，319d）分叉并线性延伸的三级分支（320a，320b和320c）以及从一级分支（319a，...，319d）线性延伸的三级分支（322a，322b和320c）二阶分支（320a，320b和320c）。表面电极（316）中的焊盘（318）不与下面的半导体层（331）电接触，而表面电极（316）和半导体层（331）在端部处彼此电接触的最高阶分支（322a，322b和322c）。而且，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极（316）下面的无效光发射相对减少，从而可以改善外部量子效率，并且通过省略电流扩散层，甚至可以允许更短波长的光以高效率熄灭。

6. 发明授权

EP0469900B1 A method for the production of a semiconductor laser device 失效
标题翻译：一种用于制造半导体激光器的过程
公开(公告)号：EP0469900B1
公开(公告)日：1995-12-13
申请号：EP91307060.3
申请日：1991-08-01
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki
IPC分类号： H01L33/00 , H01S3/025
CPC分类号： H01S5/164 , H01L21/314 , H01S5/0202 , H01S5/0281 , H01S5/0282

7. 发明授权

EP0321294B1 A semiconductor laser device 失效
标题翻译：半导体激光器件。
公开(公告)号：EP0321294B1
公开(公告)日：1995-09-06
申请号：EP88311971.1
申请日：1988-12-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Hosoda, Masahiro , Sasaki, Kazuaki , Kondo, Masaki
IPC分类号： H01S3/19 , H01S3/06
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277

8. 发明公开

EP0558856A3 A method for producing a semiconductor laser device 失效
标题翻译：一种生产半导体激光器件的方法
公开(公告)号：EP0558856A3
公开(公告)日：1993-12-29
申请号：EP92311823.6
申请日：1992-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Ohbayashi, Ken , Sasaki, Kazuaki , Yamamoto, Osamu , Matsumoto, Mitsuhiro
IPC分类号： H01S3/025
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming semiconductor window layers on either one of a top surface of an internal structure or a reverse surface of a substrate (10) and on light-emitting end facets (30A,30B) of the internal structure; forming a reflection film (34) on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming semiconductor window layers on light-emitting end facets of the bars (2); inserting the bars (2) into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars (2) and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars (2); and cutting the bars (2) into the chips.

9. 发明授权

EP0381521B1 A semiconductor laser device and a method for the production of the same 失效
标题翻译：它们的制备方法的半导体激光装置和处理
公开(公告)号：EP0381521B1
公开(公告)日：2002-05-08
申请号：EP90301124.5
申请日：1990-02-02
申请人： SHARP KABUSHIKI KAISHA
发明人： Kawanishi, Hidenori , Morimoto, Taiji , Kaneiwa, Shinji , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Yano, Seiki , Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Shiomoto, Takehiro , Yamamoto, Saburo
IPC分类号： H01S5/02
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/028 , H01S5/0282 , H01S5/0283

10. 发明公开

EP0544512A1 Light-emitting diode having a surface electrode of a tree-like form 失效
标题翻译： Lichtemittierende Diode mit baumartigerOberflächenelektrode。
公开(公告)号：EP0544512A1
公开(公告)日：1993-06-02
申请号：EP92310770.0
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabo, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面（330）上的表面电极（316）具有焊盘（318），并且还包括至少一级分支（319a，...，319d），其从所述焊盘（318）线性延伸，第二从一级分支（319a，...，319d）发散并线性延伸的三阶分支（320a，320b和320c）以及从所述一级分支（319a，...，319d）发散并线性延伸的三阶分支（322a，322b和322c）二阶分支（320a，320b和320c）。表面电极（316）外的焊盘（318）不与下面的半导体层（331）电接触，而表面电极（316）和半导体层（331）在端部彼此电接触的最高级分支（322a，322b和322c）。此外，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极（316）下方的无效发光被相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至能够以较高的效率使更短的波长的光能够被排出。

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