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1. 发明公开

EP4340049A2 LIGHT EMITTING DIODE CHIP 审中-实审
公开(公告)号：EP4340049A2
公开(公告)日：2024-03-20
申请号：EP24154569.8
申请日：2018-09-14
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Jae Kwon , KIM, Jong Kyu , KIM, Hyun A , LEE, Joon Sup
IPC分类号： H01L33/20
摘要： A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip according to one embodiment includes; a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa including an active layer and a second conductivity type semiconductor layer, wherein the mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer; a side coating layer(s) covering a side surface of the mesa; and a reflection structure spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

2. 发明授权

EP3399554B1 LIGHT EMITTING DIODE 有权
公开(公告)号：EP3399554B1
公开(公告)日：2020-05-13
申请号：EP18161738.2
申请日：2018-03-14
申请人： Seoul Viosys Co., Ltd
发明人： OH, Se Hee , KIM, Jong Kyu , KIM, Hyun A
IPC分类号： H01L27/15

3. 发明公开

EP3454372A1 LIGHT EMITTING DIODE 有权
公开(公告)号：EP3454372A1
公开(公告)日：2019-03-13
申请号：EP17792825.6
申请日：2017-04-26
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Hyun A , KIM, Jong Kyu , LIM, Hyoung Jin
IPC分类号： H01L27/15 , H01L33/48 , H01L33/36 , H01L33/52 , H01L33/10 , H01L33/02 , H01L25/075 , H01L33/60 , H01L33/40
摘要： A light emitting diode in accordance with an exemplary embodiment comprises a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively ; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell; an n-electrode pad connected to the first contact layer; and a p-electrode pad connected to the reflection structure on the second light emitting cell, wherein the first light emitting cell and the second light emitting cell are isolated from each other, and wherein their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

4. 发明公开

EP4297105A3 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 审中-实审
公开(公告)号：EP4297105A3
公开(公告)日：2024-04-24
申请号：EP23208095.2
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd.
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/48 , H01L33/62 , H01L33/10 , H01L33/42 , H01L33/38 , H01L33/40
CPC分类号： H01L33/10 , H01L33/42 , H01L33/62 , H01L33/382 , H01L33/486 , H01L33/405 , H01L33/385 , H01L33/387
摘要： A light emitting diode module, comprising a printed circuit board (1023), and a light emitting diode (1021) disposed on the substrate, the light emitting diode including a substrate (21), a first conductivity type semiconductor layer (23), a mesa (M) disposed on the first conductivity type semiconductor layer (23), and including an active layer (25) and a second conductivity type semiconductor layer (27), an ohmic contact layer (28) disposed on the mesa (M) and electrically connected to the second conductivity type semiconductor layer (27), a lower insulation layer (33) covering the mesa (M), and including at least one first opening (33a1) exposing the first conductivity type semiconductor layer (23) and a second opening (33a2), a first pad metal layer (35a) disposed on the lower insulation layer (33), and electrically connected to the first conductivity type semiconductor layer (23) through the at least one first opening (33a1), a second pad metal layer (35b) disposed on the lower insulation layer (33), and electrically connected to the ohmic contact layer (28) through the second opening (33a2), a upper insulation layer (37) covering the first and second pad metal layers (35a, 35b) and including first opening (37a) exposing the first pad metal layer (35a) and a second opening (37b) exposing the second pad metal layer (35b), a first bump pad (39a) disposed on the upper insulation (37), and electrically connected to the first pad metal layer (35a) through the first opening (37a) of the upper insulation layer(37), and a second bump pad (39b) disposed on the upper insulation (37), and electrically connected to the second pad metal layer (35b) through the second opening (37b) of the upper insulation layer(37), wherein the first pad metal layer (35a) includes a protrusion having an outer contact portion (35a1) that contacts the first conductivity type semiconductor layer (23) near the edge of the substrate (21), and wherein the first pad metal layer (35a) includes a region that has a wide width and a region that has a narrow width extending from thereof.

5. 发明公开

EP4187597A1 LIGHT-EMITTING DIODE HAVING PLURALITY OF LIGHT-EMITTING CELLS 审中-实审
公开(公告)号：EP4187597A1
公开(公告)日：2023-05-31
申请号：EP21853239.8
申请日：2021-08-09
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , LIM, Wan Tae , WOO, Sang Won
IPC分类号： H01L25/075 , H01L33/10 , H01L33/62 , H01L33/38 , H01L33/40
摘要： A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.

6. 发明公开

EP3731277A1 LIGHT EMITTING DEVICE 有权转让
公开(公告)号：EP3731277A1
公开(公告)日：2020-10-28
申请号：EP19191010.8
申请日：2019-08-09
申请人： Seoul Viosys Co., Ltd
发明人： OH, Se Hee , KANG, Min Woo , KIM, Jong Kyu , KIM, Hyun A
IPC分类号： H01L27/15 , H01L33/38
摘要： A light emitting device is disclosed. The light emitting device includes: a first light emitting cell disposed in a first region on a substrate and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a second light emitting cell disposed in a second region on the substrate to be spaced apart from the first light emitting cell and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first conductive pattern disposed in the first region and including contact portions electrically connected to the first conductivity type semiconductor layers; and a connection pattern including contact portions electrically connected to the second conductivity type semiconductor layer of the first light emitting cell and contact portions electrically connected to the first conductivity type semiconductor layer of the second light emitting cell, wherein, at an edge of the first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.

7. 发明公开

EP3716346A1 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 有权转让
公开(公告)号：EP3716346A1
公开(公告)日：2020-09-30
申请号：EP18890348.8
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/48 , H01L33/62 , H01L33/10 , H01L33/42
摘要： A chip-scale package type light emitting diode is provided. The light emitting diode according to an exemplary embodiment includes: a first conductivity type semiconductor layer; a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent conductive oxide layer disposed on the mesa; a dielectric layer including a plurality of openings exposing the conductive oxide layer, and having a lower refractive index than those of the second conductivity type semiconductor layer and the conductive oxide layer; a metal reflection layer connecting to the conductive oxide layer through the openings of the dielectric layer; a lower insulation layer including a first opening exposing the first conductivity type semiconductor layer and a second opening exposing the metal reflection layer; a first pad metal layer electrically connected to the first conductivity type semiconductor layer through the first opening; a second pad metal layer electrically connected to the metal reflection layer through the second opening; and an upper insulation layer covering the first pad metal layer and the second pad metal layer, and including a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer, in which the openings of the dielectric layer include a narrow and elongated bar-shaped opening adjacent to at least one of the first openings of the lower insulation layer.

8. 发明公开

EP4456158A1 LIGHT-EMITTING DIODE 失效
公开(公告)号：EP4456158A1
公开(公告)日：2024-10-30
申请号：EP22911633.0
申请日：2022-11-17
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Kyoung Wan , KIM, Hae Yu
IPC分类号： H01L33/40 , H01L33/62 , H01L33/46 , H01L33/60 , H01L33/44 , H01L33/24
CPC分类号： H01L33/60 , H01L33/40 , H01L33/62 , H01L33/24 , H01L33/46 , H01L33/44
摘要： A light-emitting diode according to an embodiment comprises: a substrate; a first conductive-type semiconductor layer disposed on the substrate; a mesa disposed on the first conductive-type semiconductor layer and including an active layer and a second conductive-type semiconductor layer; an ohmic contact layer disposed on the second conductive-type semiconductor layer and formed by islands which are spaced apart from each other; a dielectric layer covering the ohmic contact layer and having openings through which the respective islands are exposed; a metal reflective layer covering the dielectric layer and electrically connected to the islands through the openings of the dielectric layer; a lower insulating layer covering the metal reflective layer and having an opening through which the metal reflective layer is exposed; and first and second bump pads disposed on the lower insulating layer and electrically connected to the first and second conductive-type semiconductor layers, respectively.

9. 发明公开

EP4184596A1 LIGHT-EMITTING DIODE AND DISPLAY APPARATUS HAVING SAME 审中-实审
公开(公告)号：EP4184596A1
公开(公告)日：2023-05-24
申请号：EP21858596.6
申请日：2021-08-19
申请人： Seoul Viosys Co., Ltd
发明人： OH, Se Hee , WOO, Sang Won , LIM, Wan Tae
IPC分类号： H01L33/10 , H01L33/38 , H01L33/22
摘要： A light emitting diode and a display apparatus having the same are disclosed. The light emitting diode includes a substrate; a light emitting structure disposed on the substrate, and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a transparent electrode disposed on and in ohmic contact with the second conductivity type semiconductor layer; a contact electrode disposed on the first conductivity type semiconductor layer; a current spreader disposed on the transparent electrode; a first insulation reflection layer covering the substrate, the light emitting structure, the transparent electrode, the contact electrode, and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector; a first pad electrode and a second pad electrode disposed on the first insulation reflection layer, and connected to the contact electrode and the current spreader through the openings, respectively; and a second insulation reflection layer disposed under the substrate, and including a distributed Bragg reflector, in which a reflection band of the second insulation reflection layer is narrower than a reflection band of the first insulation reflection layer.

10. 发明公开

EP3767688A1 LIGHT EMITTING DIODE 有权
公开(公告)号：EP3767688A1
公开(公告)日：2021-01-20
申请号：EP20194164.8
申请日：2017-04-26
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Hyun A , KIM, Jong Kyu , LIM, Hyoung Jin
IPC分类号： H01L33/08 , H01L33/36 , H01L33/40 , H01L33/44 , H01L27/15 , H01L33/38 , H01L33/22 , H01L33/46
摘要： A light emitting diode in accordance with an exemplary embodiment comprises a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively ; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell; an n-electrode pad connected to the first contact layer; and a p-electrode pad connected to the reflection structure on the second light emitting cell, wherein the first light emitting cell and the second light emitting cell are isolated from each other, and wherein their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

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