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1. 发明公开

EP3767688A1 LIGHT EMITTING DIODE 有权
公开(公告)号：EP3767688A1
公开(公告)日：2021-01-20
申请号：EP20194164.8
申请日：2017-04-26
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Hyun A , KIM, Jong Kyu , LIM, Hyoung Jin
IPC分类号： H01L33/08 , H01L33/36 , H01L33/40 , H01L33/44 , H01L27/15 , H01L33/38 , H01L33/22 , H01L33/46
摘要： A light emitting diode in accordance with an exemplary embodiment comprises a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively ; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell; an n-electrode pad connected to the first contact layer; and a p-electrode pad connected to the reflection structure on the second light emitting cell, wherein the first light emitting cell and the second light emitting cell are isolated from each other, and wherein their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

2. 发明公开

EP3258507A2 LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光元件和发光二极管
公开(公告)号：EP3258507A2
公开(公告)日：2017-12-20
申请号：EP16749413.7
申请日：2016-02-04
申请人： Seoul Viosys Co., Ltd
发明人： KIM, Jong Kyu , LEE, So Ra , YOON, Yeo Jin , KIM, Jae Kwon , LEE, Joon Sup , KANG, Min Woo , OH, Se Hee , KIM, Hyun A , LIM, Hyoung Jin
IPC分类号： H01L33/64 , H01L33/38 , H01L33/08 , H01L33/58 , H01L33/60
CPC分类号： H01L27/156 , H01L33/08 , H01L33/36 , H01L33/38 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/16225 , H01L2224/32245 , H01L2924/181 , H01L2924/19107 , H01L2933/0016 , H01L2924/00012
摘要： A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
摘要翻译：发光元件包括发光结构，该发光结构包括第一导电半导体层，第二导电半导体层以及插入在第一导电半导体层和第二导电半导体层之间的有源层; 第一接触电极和第二接触电极，位于所述发光结构上，并分别与所述第一导电半导体层和所述第二导电半导体层欧姆接触; 覆盖第一接触电极和第二接触电极的一部分以绝缘第一接触电极和第二接触电极的绝缘层; 电连接到所述第一接触电极和所述第二接触电极中的每一个的第一电极焊盘和第二电极焊盘; 以及辐射焊盘，形成在绝缘层上，并辐射从发光结构产生的热量。

3. 发明公开

EP3920245A1 LIGHT-EMITTING DIODE 审中-公开
公开(公告)号：EP3920245A1
公开(公告)日：2021-12-08
申请号：EP19913227.5
申请日：2019-12-06
申请人： Seoul Viosys Co., Ltd
发明人： KIM, Jae Kwon , HEO, Min Chan , KIM, Kyoung Wan , KIM, Jong Kyu , KIM, Hyun A , LEE, Joon Sup
IPC分类号： H01L33/38 , H01L33/62 , H01L33/10 , H01L33/60 , H01L33/36 , H01L27/15
摘要： A light emitting diode according to an exemplary embodiment includes: a first conductivity type semiconductor layer; a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer, in which the active layer generates light having a peak wavelength of about 500 nm or less, the lower insulation layer includes a distributed Bragg reflector, the lower insulation layer has a high reflection wavelength band continuously exhibiting reflectances of 90% or more in a wavelength range of the visible region, reflectances in a first wavelength region including a peak wavelength of light generated in the active layer within the high reflection wavelength band are higher than those in a second wavelength region within a range of 554 nm to 700 nm, and the first wavelength region is located in a region of wavelengths shorter than 554 nm.

4. 发明公开

EP3264476A1 LIGHT EMITTING DIODE CHIP 有权
标题翻译：发光二极管芯片
公开(公告)号：EP3264476A1
公开(公告)日：2018-01-03
申请号：EP17185126.4
申请日：2011-06-13
申请人： Seoul Viosys Co., Ltd.
发明人： HEO, Min Chan , JIN, Sang Ki , KIM, Jong Kyu , SHIN, Jin Cheoul , LEE, So Ra , LEE, Sum Geun
IPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/50 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide light emitting diode (LED) chips (100; 200; 200a). An LED chip (100; 200; 200a) according to an exemplary embodiment includes a substrate (21); a light emitting structure (30) arranged on the substrate (21); and an alternating lamination bottom structure (43) arranged under the substrate (21). The alternating lamination bottom structure (43) includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.
摘要翻译：本发明的示例性实施例提供了发光二极管（LED）芯片（100; 200; 200a）。根据示例性实施例的LED芯片（100; 200; 200a）包括基板（21）;以及基板设置在所述基板（21）上的发光结构（30）; 和布置在基底（21）下方的交替层压底部结构（43）。交替层压底部结构（43）包括多个电介质对，每个电介质对包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，第一折射率大于第二折射率折射率。

5. 发明授权

EP2074667B1 LIGHT EMITTING DIODE HAVING LIGHT EMITTING CELL WITH DIFFERENT SIZE AND LIGHT EMITTING DEVICE THEREOF 有权
标题翻译： LEUCHTDIODE MIT EINER LEUCHTZELLE VERSCHIEDENERGRÖSSEUND LEUCHTBAUELEMENT DAVON
公开(公告)号：EP2074667B1
公开(公告)日：2016-11-09
申请号：EP07808240.1
申请日：2007-09-14
申请人： Seoul Viosys Co., Ltd
发明人： LEE, Jun Hee , KIM, Jong Kyu , YOON, Yeo Jin
IPC分类号： H01L27/15 , H01L33/62
CPC分类号： H01L27/15 , H01L27/156 , H01L33/62 , H01L2224/48137 , H01L2224/73265 , H01L2924/12041

6. 发明公开

EP4297105A3 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 审中-公开
公开(公告)号：EP4297105A3
公开(公告)日：2024-04-24
申请号：EP23208095.2
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd.
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/48 , H01L33/62 , H01L33/10 , H01L33/42 , H01L33/38 , H01L33/40
CPC分类号： H01L33/10 , H01L33/42 , H01L33/62 , H01L33/382 , H01L33/486 , H01L33/405 , H01L33/385 , H01L33/387
摘要： A light emitting diode module, comprising a printed circuit board (1023), and a light emitting diode (1021) disposed on the substrate, the light emitting diode including a substrate (21), a first conductivity type semiconductor layer (23), a mesa (M) disposed on the first conductivity type semiconductor layer (23), and including an active layer (25) and a second conductivity type semiconductor layer (27), an ohmic contact layer (28) disposed on the mesa (M) and electrically connected to the second conductivity type semiconductor layer (27), a lower insulation layer (33) covering the mesa (M), and including at least one first opening (33a1) exposing the first conductivity type semiconductor layer (23) and a second opening (33a2), a first pad metal layer (35a) disposed on the lower insulation layer (33), and electrically connected to the first conductivity type semiconductor layer (23) through the at least one first opening (33a1), a second pad metal layer (35b) disposed on the lower insulation layer (33), and electrically connected to the ohmic contact layer (28) through the second opening (33a2), a upper insulation layer (37) covering the first and second pad metal layers (35a, 35b) and including first opening (37a) exposing the first pad metal layer (35a) and a second opening (37b) exposing the second pad metal layer (35b), a first bump pad (39a) disposed on the upper insulation (37), and electrically connected to the first pad metal layer (35a) through the first opening (37a) of the upper insulation layer(37), and a second bump pad (39b) disposed on the upper insulation (37), and electrically connected to the second pad metal layer (35b) through the second opening (37b) of the upper insulation layer(37), wherein the first pad metal layer (35a) includes a protrusion having an outer contact portion (35a1) that contacts the first conductivity type semiconductor layer (23) near the edge of the substrate (21), and wherein the first pad metal layer (35a) includes a region that has a wide width and a region that has a narrow width extending from thereof.

7. 发明公开

EP3731277A1 LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：EP3731277A1
公开(公告)日：2020-10-28
申请号：EP19191010.8
申请日：2019-08-09
申请人： Seoul Viosys Co., Ltd
发明人： OH, Se Hee , KANG, Min Woo , KIM, Jong Kyu , KIM, Hyun A
IPC分类号： H01L27/15 , H01L33/38
摘要： A light emitting device is disclosed. The light emitting device includes: a first light emitting cell disposed in a first region on a substrate and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a second light emitting cell disposed in a second region on the substrate to be spaced apart from the first light emitting cell and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first conductive pattern disposed in the first region and including contact portions electrically connected to the first conductivity type semiconductor layers; and a connection pattern including contact portions electrically connected to the second conductivity type semiconductor layer of the first light emitting cell and contact portions electrically connected to the first conductivity type semiconductor layer of the second light emitting cell, wherein, at an edge of the first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.

8. 发明公开

EP3716346A1 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 审中-实审
公开(公告)号：EP3716346A1
公开(公告)日：2020-09-30
申请号：EP18890348.8
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/48 , H01L33/62 , H01L33/10 , H01L33/42
摘要： A chip-scale package type light emitting diode is provided. The light emitting diode according to an exemplary embodiment includes: a first conductivity type semiconductor layer; a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent conductive oxide layer disposed on the mesa; a dielectric layer including a plurality of openings exposing the conductive oxide layer, and having a lower refractive index than those of the second conductivity type semiconductor layer and the conductive oxide layer; a metal reflection layer connecting to the conductive oxide layer through the openings of the dielectric layer; a lower insulation layer including a first opening exposing the first conductivity type semiconductor layer and a second opening exposing the metal reflection layer; a first pad metal layer electrically connected to the first conductivity type semiconductor layer through the first opening; a second pad metal layer electrically connected to the metal reflection layer through the second opening; and an upper insulation layer covering the first pad metal layer and the second pad metal layer, and including a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer, in which the openings of the dielectric layer include a narrow and elongated bar-shaped opening adjacent to at least one of the first openings of the lower insulation layer.

9. 发明公开

EP4340049A3 LIGHT EMITTING DIODE CHIP 审中-公开
公开(公告)号：EP4340049A3
公开(公告)日：2024-05-15
申请号：EP24154569.8
申请日：2018-09-14
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Jae Kwon , KIM, Jong Kyu , KIM, Hyun A , LEE, Joon Sup
IPC分类号： H01L33/46 , H01L33/44 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/60
CPC分类号： H01L33/405 , H01L33/382 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46
摘要： A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip according to one embodiment includes; a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa including an active layer and a second conductivity type semiconductor layer, wherein the mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer; a side coating layer(s) covering a side surface of the mesa; and a reflection structure spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

10. 发明公开

EP4297105A2 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 审中-公开
公开(公告)号：EP4297105A2
公开(公告)日：2023-12-27
申请号：EP23208095.2
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd.
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/40
摘要： A light emitting diode module, comprising a printed circuit board (1023), and a light emitting diode (1021) disposed on the substrate, the light emitting diode including a substrate (21), a first conductivity type semiconductor layer (23), a mesa (M) disposed on the first conductivity type semiconductor layer (23), and including an active layer (25) and a second conductivity type semiconductor layer (27), an ohmic contact layer (28) disposed on the mesa (M) and electrically connected to the second conductivity type semiconductor layer (27), a lower insulation layer (33) covering the mesa (M), and including at least one first opening (33a1) exposing the first conductivity type semiconductor layer (23) and a second opening (33a2), a first pad metal layer (35a) disposed on the lower insulation layer (33), and electrically connected to the first conductivity type semiconductor layer (23) through the at least one first opening (33a1), a second pad metal layer (35b) disposed on the lower insulation layer (33), and electrically connected to the ohmic contact layer (28) through the second opening (33a2), a upper insulation layer (37) covering the first and second pad metal layers (35a, 35b) and including first opening (37a) exposing the first pad metal layer (35a) and a second opening (37b) exposing the second pad metal layer (35b), a first bump pad (39a) disposed on the upper insulation (37), and electrically connected to the first pad metal layer (35a) through the first opening (37a) of the upper insulation layer(37), and a second bump pad (39b) disposed on the upper insulation (37), and electrically connected to the second pad metal layer (35b) through the second opening (37b) of the upper insulation layer(37), wherein the first pad metal layer (35a) includes a protrusion having an outer contact portion (35a1) that contacts the first conductivity type semiconductor layer (23) near the edge of the substrate (21), and wherein the first pad metal layer (35a) includes a region that has a wide width and a region that has a narrow width extending from thereof.

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