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    • 2. 发明公开
    • Semiconductor light emitting device
    • 半导体发光器件
    • EP2448015A2
    • 2012-05-02
    • EP11187247.9
    • 2011-10-31
    • Samsung LED Co., Ltd.
    • Hwang, Seok MinKim, Jae YoonLee, Jin Bock
    • H01L33/38
    • H01L33/38H01L33/42H01L2933/0016
    • A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.
    • 一种半导体发光器件包括:第一和第二导电型半导体层; 设置在第一和第二导电类型半导体层之间的有源层; 以及分别设置在所述第一导电类型半导体层和所述第二导电类型半导体层中的每一个的一个表面上的第一电极和第二电极,其中所述第一电极和所述第二电极中的至少一个包括焊盘部分和形成为从所述焊盘部分延伸的指状部分, 手指部分的末端具有环形形状。 由于电流集中在手指部分的局部区域的现象被最小化,因此可以增强对静电放电(ESD)的容忍度并且可以改善光提取效率。