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    • 4. 发明公开
    • Light-emitting device and method of manufacturing the same
    • 发光装置及其制造方法
    • EP2506315A2
    • 2012-10-03
    • EP12160657.8
    • 2012-03-22
    • Samsung LED Co., Ltd.
    • Paek, Ho-sunKIM, Hak-hwanOh, Sung-kyong
    • H01L33/00H01L33/38H01L33/44H01L33/20
    • A light-emitting device and a method of manufacturing the same are provided. The light-emitting device (100) includes a compound semiconductor structure (120) having a first N-type compound semiconductor layer (123), an active layer (122), and a P-type compound semiconductor layer (121), a P-type electrode layer (150) that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, at least one insulation wall (131,132) disposed on the compound semiconductor structure and the P-type electrode layer, at least one N-type electrode layer (141,142) penetrating the at least one insulation wall, and a conductive substrate (170) in which at least one N-type electrode connecting layer (171,172) corresponding to the N-type electrode layer is separated from a P-type electrode connecting layer (173) corresponding to the P-type electrode layer.
    • 提供了一种发光器件及其制造方法。 发光器件(100)包括具有第一N型化合物半导体层(123),有源层(122)和P型化合物半导体层(121)的化合物半导体结构(120),P 型电极层(150),其设置在所述P型化合物半导体层上并与所述P型化合物半导体层电连接;至少一个设置在所述化合物半导体结构上的绝缘壁(131,132)和所述P型电极 层,穿透所述至少一个绝缘壁的至少一个N型电极层(141,142),以及导电衬底(170),其中至少一个N型电极连接层(171,172)对应于所述N型电极层 与对应于P型电极层的P型电极连接层(173)分离。