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1. 发明公开

EP1153888A4 METHOD OF PRODUCING INORGANIC COMPOUND SOLID SUBSTANCE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：一种用于生产固体和无机组分和一种用于生产半导体元件
公开(公告)号：EP1153888A4
公开(公告)日：2006-03-29
申请号：EP99973005
申请日：1999-11-22
申请人： ROHM CO LTD
发明人： NAKAMURA TAKASHI , FUJIMORI YOSHIKAZU
IPC分类号： C01G1/00 , C01G1/02 , C01G25/00 , C01G35/00 , C23C18/14 , H01L21/02 , H01L21/3105 , H01L21/314 , H01L21/316
CPC分类号： H01L21/02318 , C01G1/02 , C01G25/006 , C01G35/006 , C01P2004/80 , C01P2006/40 , C23C18/14 , H01L21/02197 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/3105 , H01L21/31691
摘要： A method for producing an excellent inorganic compound solid substance (such as ferroelectric film) by heat treatment at a relatively low temperature by using an organic compound material containing a metallic element. To form a ferroelectric film, a solution of an organic compound material containing a metallic element is applied to a semiconductor substrate (S41), the substrate is dried (S42) and preliminarily baked (S43), the steps are repeated until the thickness of the film formed on the substrate reaches a predetermined value, organic substances are removed by, for example, a heat treatment (at about 550°C) in a low-pressure atmosphere (at about 50 Torr) (S45), the inorganic compound material obtained by the organic substance removal is baked at, for example, about 550°C to crystallize the organic compound material (S46).

2. 发明公开

EP1662298A4 STRUCTURE HAVING LIGHT MODULATING FILM AND OPTICAL CONTROLLING DEVICE USING SAME 审中-公开
标题翻译：与光调制膜及光学控制装置的结构，
公开(公告)号：EP1662298A4
公开(公告)日：2006-08-30
申请号：EP04771379
申请日：2004-08-06
申请人： ROHM CO LTD
发明人： FUJIMORI YOSHIKAZU , NAKAMURA TAKASHI
IPC分类号： G02F1/055 , C04B35/491 , G02F1/00
CPC分类号： G02F1/0551 , G02F1/0027 , G02F1/055 , G02F2202/42
摘要： A structure comprising a substrate (32) and a light modulating film (46) formed above the substrate (32) is characterized as follows: the light modulating film (46) is composed of a polycrystalline PLZT containing Pb, Zr, Ti and La as components; the La content in the film is 5-30 atom%; and the relative dielectric constant at 1 MHz is not less than 1,200.

3. 发明公开

EP1447909A4 DATA HOLDING APPARATUS AND DATA READ OUT METHOD 有权
标题翻译： DATENHALTEVORRICHTUNG UND DATENAUSLESEVERFAHREN
公开(公告)号：EP1447909A4
公开(公告)日：2006-05-24
申请号：EP02803509
申请日：2002-11-15
申请人： ROHM CO LTD
发明人： FUJIMORI YOSHIKAZU
IPC分类号： G11C8/02 , G11C14/00 , H03K3/037
CPC分类号： G11C14/0072 , G11C14/00 , H03K3/0375
摘要： A data holding apparatus capable of holding data even when power supply is cut off and having a high reliability of data holding. A data holding apparatus (1) includes a data latch circuit (3) and a ferroelectric storage unit (5). In ferroelectric capacitors (17, 19), it is possible to store data in non-volatile manner. The ferroelectric capacitor (17) has one end connected via a transfer gate (11) to an input node (7a) of an inverter circuit (7). When data is passing, the transfer gate (11) is disconnected. Accordingly, even when the input data D changes during data passing, the change is rapidly transferred to the input node (7a). Consequently, the reliability of the latch operation is not lowered even when operated at normal operation speed.
摘要翻译：提供一种能够保持数据的数据保持装置，即使关闭电源并且保持数据的可靠性高。数据保持装置1设置有数据锁存电路3和铁电存储部5.铁电电容器17和19能够以非易失性的方式存储数据。铁电电容器17的一端通过传输门11与逆变器电路7的输入节点7a连接。当数据通过时，传输门11处于断开状态。因此，即使在数据通过时输入数据D发生变化，也能够将变化快速地传送到输入节点7a，所以即使以通常的速度进行操作，闭锁动作的可靠性也不会降低。

4. 发明公开

EP1471643A4 LOGICAL OPERATION CIRCUIT AND LOGICAL OPERATION METHOD 有权
标题翻译：电路，其逻辑运算的逻辑运算和程序
公开(公告)号：EP1471643A4
公开(公告)日：2005-04-27
申请号：EP03734829
申请日：2003-01-22
申请人： ROHM CO LTD
发明人： KAMEYAMA MICHITAKA , HANYU TAKAHIRO , KIMURA HIROMITSU , FUJIMORI YOSHIKAZU , NAKAMURA TAKASHI , TAKASU HIDEMI
IPC分类号： G11C7/10 , G11C11/00 , G11C11/16 , G11C11/22 , G11C15/04 , H03K19/16 , H03K19/185 , G11C11/15
CPC分类号： H03K19/185 , G11C7/1006 , G11C11/22 , G11C2207/104 , H03K19/16
摘要： A logical operation circuit and logical operation method for performing logical operation of data by using a ferroelectric capacitor. A logical operation circuit (1) comprises a ferroelectric capacitor (CF) and a transistor (MP). The ferroelectric capacitor (CF) holds a polarized state P1 (y=1) or P2 (y=0) corresponding to first data y to be operated. In operation, a first terminal (3) of the ferroelectric capacitor (CF) is precharged to a power supply potential Vdd, and a second terminal (5) is given a potential corresponding to second data x to be operated, namely, a grounding potential GND (x=1) or the power supply potential Vdd (x=0) through a bit line (BL). By adequately setting the threshold voltage Vth of the transistor (MP), the transistor (MP) is (on, on, on, off) for the combinations (0-0, 0-1, 1-0, 1-1) of x and y, respectively.

5. 发明公开

EP0940856A4 FERROELECTRIC MEMORY ELEMENT AND METHOD OF PRODUCING THE SAME 失效
标题翻译： FERRO电记忆元及其制造方法
公开(公告)号：EP0940856A4
公开(公告)日：2002-03-27
申请号：EP98919659
申请日：1998-05-18
申请人： ROHM CO LTD
发明人： NAKAMURA TAKASHI , FUJIMORI YOSHIKAZU
IPC分类号： H01L21/8247 , H01B3/12 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L29/78391
摘要： A ferroelectric film having a low permittivity and used for a ferroelectric memory element, and a ferroelectric film having a high melting point and used for a ferroelectric memory element. A FET (20) is constituted of a gate oxide film (24), a floating gate (26), a ferroelectric film (28) and a control gate (30) laminated in this order on a channel-forming region (CH) formed in a silicon semiconductor substrate (22). The ferroelectric film (28) is constituted of a thin film of a mixed crystal Sr2(Ta1-xNbx)2O7. Both Sr2Nb2O7 and Sr2Ta2O7 have a tetragonal crystalline structure and have nearly the same lattice constant. They have low specific inductivities and high melting points. However, Sr2Nb2O7 has too high a Curie temperature that is related to the ferroelectric property and Sr2Ta2O7 has too low a Curie temperature. Therefore, a mixed crystal Sr2(Ta1-xNbx)2O7 thereof is prepared to obtain a ferroelectric film (28) having a desired Curie Temperature.

6. 发明公开

EP1840632A4 OPTICAL CONTROL DEVICE HAVING LIGHT MODULATION FILM 审中-公开
标题翻译：具有光调制膜的光控制元件
公开(公告)号：EP1840632A4
公开(公告)日：2009-01-28
申请号：EP06712000
申请日：2006-01-19
申请人： ROHM CO LTD
发明人： FUJIMORI YOSHIKAZU , FUJII TSUYOSHI
IPC分类号： G02F1/03
CPC分类号： G02F1/21 , G02F1/055 , G02F2001/213 , G02F2203/12
摘要： There is provided a reflection type optical control device in which light use efficiency is improved. An optical control device (8) has a plurality of pixels (10) two-dimensionally arranged on a substrate (30). A first reflection layer (32) is formed on the substrate (30). A light modulation film (34) is arranged on the first reflection layer (32). The light modulation film (34) is formed by an electro-optical material such as PLZT whose refraction factor is changed according to the electric field applied. A transparent electrode (36) is arranged on the upper surface of the light modulation film (34). A second reflection layer (40) is formed on the upper surface of the transparent electrode (36). The second reflection layer (40) is includes a dielectric multi-layer film formed by a first dielectric film (42) and a second dielectric film (44) having different refraction factors layered alternately. The first reflection layer (32), the light modulation film (34), and the second reflection layer (40) constitute a resonator. The transparent electrode (36) and the first reflection layer (32) constitute an electrode pair for controlling the reflection ratio of the optical control device (8) by the electric field applied to the light modulation film (34).

7. 发明公开

EP1659439A4 OPTICAL CONTROLLING DEVICE 审中-公开
标题翻译：光控装置
公开(公告)号：EP1659439A4
公开(公告)日：2009-03-04
申请号：EP04771380
申请日：2004-08-06
申请人： ROHM CO LTD
发明人： FUJIMORI YOSHIKAZU , NAKAHARA KEN , NAKAMURA TAKASHI
IPC分类号： G02F1/03 , G02F1/055 , G02F1/29 , G09F9/30 , G11C13/04
CPC分类号： G11C13/042 , G02F1/055 , G02F2201/124 , G02F2203/12 , G09G3/346 , G09G2300/0857
摘要： Disclosed is an optical controlling device (8) which comprises a substrate (32), an insulating film (38), a first transistor (14), a reflective film (44) formed on the insulating film (38), a light modulating film (46) formed on the reflective film (44), plural pairs of electrodes (48, 49) two-dimensionally arranged on the light modulating film (46), and a polarizing plate (52) formed above the first electrode (48). The light modulating film (46) is composed of a material whose refraction index changes according to the intensity of applied electric field. As such a material, there can be used a PLZT which contains Pb, Zr, Ti and La as components.

8. 发明公开

EP1220318A4 NONVOLATILE MEMORY 审中-公开
标题翻译： NICHTFLÜCHTIGERSPEICHER
公开(公告)号：EP1220318A4
公开(公告)日：2007-06-06
申请号：EP00962950
申请日：2000-09-28
申请人： ROHM CO LTD
发明人： FUJIMORI YOSHIKAZU , NAKAMURA TAKASHI
IPC分类号： H01L29/51 , H01L29/788 , H01L27/105 , H01L21/8247 , H01L29/792
CPC分类号： H01L29/516 , H01L29/7881
摘要： The leakage current of a nonvolatile memory is decreased to improve memory characteristics. A nonvolatile memory includes FETs of a MFMIS structure in which a metallic layer (M) and an insulator layer (I) are formed as buffer layers in an interface between ferroelectric and semiconductor, and an insulating barrier layer is formed between the floating gate or control gate and the ferroelectric layer.
摘要翻译：非易失性存储器的泄漏电流降低以改善存储特性。非易失性存储器包括MFMIS结构的FET，其中在铁电和半导体之间的界面中形成金属层（M）和绝缘层（I）作为缓冲层，并且在浮栅或控制器之间形成绝缘阻挡层门和铁电层。

9. 发明公开

EP1471644A4 LOGICAL OPERATION CIRCUIT AND LOGICAL OPERATION METHOD 有权
标题翻译：电路及方法进行逻辑运算
公开(公告)号：EP1471644A4
公开(公告)日：2005-04-27
申请号：EP03734830
申请日：2003-01-22
申请人： ROHM CO LTD
发明人： KAMEYAMA MICHITAKA , HANYU TAKAHIRO , KIMURA HIROMITSU , FUJIMORI YOSHIKAZU , NAKAMURA TAKASHI , TAKASU HIDEMI
IPC分类号： G11C7/10 , G11C11/16 , G11C11/22 , G11C15/04 , H03K19/185 , G11C11/15
CPC分类号： G11C11/22 , G11C7/1006 , H03K19/185
摘要： A logical operation circuit and logical operation method for performing logical operation of data by using a ferroelectric capacitor. A logical operation circuit (1) comprises a ferroelectric capacitors (CF1, CF2) and transistor (MP). The ferroelectric capacitor (CF1) holds a polarized state P1 corresponding to a logical operator. In operation or storing processing, first and second terminals (3, 5) of the ferroelectric capacitor (CF1) is brought to a power supply potential Vdd corresponding to first operand data y1=1 and a ground potential GND corresponding to second operand data y2=0. Hence, the polarized state of the ferroelectric capacitor (CF1) is changed to P4. The residual polarized state corresponding to P4 is P2. For the combination (0-0, 0-1, 1-0, 1-1) of y1 and y2, the combination of the residual polarized states are (P1, P1, P2, P1). In later reading, an output corresponding to the residual polarized state is generated through the transistor (MP).

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