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1. 发明公开

EP0503729A2 Optoelectronic semiconductor device and method of manufacturing such a device 失效
标题翻译：光电子半导体器件和制造这种装置的方法。
公开(公告)号：EP0503729A2
公开(公告)日：1992-09-16
申请号：EP92200641.6
申请日：1992-03-06
申请人： Philips Electronics N.V.
发明人： Thijs, Petrus Johannes Adrianus , Van Leerdam, Aart , Binsma, Johannes Jordanus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01L21/20
CPC分类号： H01L33/0062 , H01S5/22
摘要： Optoelectronic semiconductor devices comprising a semiconductor (11) body with a semiconductor substrate (1) and a substantially plane semiconductor layer structure (2, 3, 4, 5A, 5B, 6) of III-V semiconductor materials situated thereon, a mesa (10) being formed at a surface (31) of the semiconductor body (11) by means of selective deposition and forming part of an optoelectronic element (32), are important components in optical communication and optical disc systems or bar code readers. The optoelectronic element (32) often is a semiconductor diode laser, but may alternatively comprise, for example, a radiation guide.
A disadvantage of the known device is that parasitic deposition takes place next to the mesa (10) during the selective deposition. In addition, the device often contains so-called cleavage steps near the mesa (10). Another disadvantage is that the height and flatness of the upper side of the mesa (10) are not well controllable.
According to the invention, such a device is characterized in that a second mesa (12) is present at at least two opposing sides of the mesa (10), separated from the first mesa by a groove (33), the surface area of the second mesa (12) in plan view being much greater than the surface area of the first mesa (10), which second mesa is also formed by means of selective deposition and simultaneously with the first mesa. It is a surprise to find that less parasitic deposition takes place than expected and that there is less damage near the first mesa after cleaving. When the distance between the first mesa (10) and the second mesa (12) is chosen to be sufficiently small, it is also found that the flatness and height of the first mesa are well controllable. The invention also relates to a method of manufacturing such a device.
摘要翻译：具有半导体本体的半导体基板和位于其上的III-V半导体材料构成的基本上是平面的半导体层结构的光电半导体器件中，台面被在半导体本体的表面上，通过选择性淀积的装置和成形的光电子元件的一部分而形成，在光通信和光盘系统或条形码阅读器的重要组件。该光电元件经常是半导体二极管激光器，但也可以包括，例如，一个辐射引导。已知装置的一个缺点是没有寄生沉积选择性沉积期间进行下一台面的地方。此外，该设备经常包含附近的台面所谓的分裂步骤。另一个缺点是，DASS模高度和台面的上侧的平坦度不能很好控制的。。根据本发明，寻求装置的特征在于，做了第二台面存在于台面的至少两个相对的侧面，通过一个槽时，第二台面的在平面图中的表面积比大得多从第一台面分离第一台面，该第二台面所以通过选择性沉积的手段和同时，随着第一台面形成的表面积。它是要找到做更小的寄生沉积发生于预期，thatthere是裂开之后靠近第一台面损伤小惊喜。当选择第一台面与所述第二台面之间的距离为足够小，就这样发现，DASS模具的平整度和第一台面的高度是公可控的。因此本发明涉及一种制造设备的搜索的方法。

2. 发明授权

EP0418953B1 Method of manufacturing a semiconductor body comprising a mesa 失效
标题翻译：一种用于生产含有台面半导体器件的方法。
公开(公告)号：EP0418953B1
公开(公告)日：1995-03-01
申请号：EP90202404.1
申请日：1990-09-10
申请人： Philips Electronics N.V.
发明人： Binsma, Johannes Jordanus Maria , Tijburg, Rudolf Paulus
IPC分类号： H01L21/306 , H01L33/00 , H01S3/19
CPC分类号： B82Y20/00 , G02B6/131 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/30612 , H01L21/30635 , H01L21/3085 , H01L21/31654 , H01L33/0062 , H01S5/2081 , H01S5/227 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , Y10S438/911 , Y10S438/978

3. 发明公开

EP0645797A1 Electron beam lithography with background exposure in a neighbouring region 失效
标题翻译： Elektronenstrahllithegraphie mit Belichtung von Nachbargebieten。
公开(公告)号：EP0645797A1
公开(公告)日：1995-03-29
申请号：EP94202723.6
申请日：1994-09-22
申请人： PHILIPS ELECTRONICS N.V.
发明人： Van Helleputte, Henri Roger Jules Richard , Verheijen, Martinus Johannes , Binsma, Johannes Jordanus Maria
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31771
摘要： A method of forming a pattern, notably a grating for semiconductor lasers, on the substrate of an integrated circuit by means of electron beam lithography. The adverse effects of the known proximity effect are prevented by additional exposure of the substrate in regions adjacent the region in which the pattern is to be written. Such additional exposure can take place with a resolution which is substantially less than that within the pattern, so that a substantial gain in time is realised relative to customary "ghost" exposure methods. Moreover, the proximity effect can thus be utilized to impose the longitudinal variation desired for laser use on the duty cycle of the grating.
摘要翻译：通过电子束光刻在集成电路的衬底上形成图案的方法，特别是用于半导体激光器的光栅。已知接近效应的不利影响通过在与要写入图案的区域相邻的区域中附加曝光来防止。这种附加曝光可以以明显小于图案内的分辨率进行，从而相对于习惯上的“幽灵”曝光方法实现了实质性的增益。此外，接近效应因此可以用于施加激光使用所需的纵向变化对光栅的占空比。

4. 发明公开

EP0418953A1 Method of manufacturing a semiconductor body comprising a mesa 失效
标题翻译： Verfahren zum Herstellen einer eine Mesa enthaltenden Halbleiteranordnung。
公开(公告)号：EP0418953A1
公开(公告)日：1991-03-27
申请号：EP90202404.1
申请日：1990-09-10
申请人： Philips Electronics N.V.
发明人： Binsma, Johannes Jordanus Maria , Tijburg, Rudolf Paulus
IPC分类号： H01L21/306 , H01L33/00 , H01S3/19
CPC分类号： B82Y20/00 , G02B6/131 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/30612 , H01L21/30635 , H01L21/3085 , H01L21/31654 , H01L33/0062 , H01S5/2081 , H01S5/227 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , Y10S438/911 , Y10S438/978
摘要： In semiconductor layer structures in which at least two semiconductor layers having different thicknesses and consisting of different semiconductor materials are present, mesas can be formed by means of wet-chemical etchants and with the use of a mask. A disadvantage of the etchants available is that it is difficult to form mesas having substantially flat side walls with a small under-etching and with an accurately determined width, especially of the thinner layer. This is an unfavourable starting situation for the manufacture of, for example, radiation guides and semiconductor diode lasers, in which such mesas are formed.
In the method according to the invention, the upper and thicker of the two semiconductor layers is etched by means of a selective and preferential etchant, substantially no underetching occurring with respect to the mask. Subsequently, the lower and thinner semiconductor layer and a part of the upper semiconductor layer are converted by a substantially non-selective anodic oxidation into semiconductor material oxides, which are removed by means of an etchant which is non-selective with respect to the oxides formed, but is selective with respect to the semiconductor materials. As a result, mesas are obtained having a substantially flat side wall, the lateral dimension of these mesas being accurately determined by the size of the mask. Thus, particularly favourable results are obtained, especially in the InP/InGaAsP material system. The method according to the invention can be used very advantageously when the thinner layer forms part of a so-called multilayer quantum well structure. In a particular embodiment, a further mask is provided above the mask in such a manner that it projects beyond the mask, the side walls of the mesa being made substantially straight, as a result of which the method is particularly suitable for providing by means of OMVPE further semiconductor layers on either side of the mesa, which results in a substantially flat buried structure.
摘要翻译：在其中存在具有不同厚度并由不同半导体材料组成的至少两个半导体层的半导体层结构中，可以通过湿化学蚀刻剂和使用掩模形成台面。可用的蚀刻剂的缺点是难以形成具有基本上平坦的侧壁的台面，其具有小的底蚀刻和具有精确确定的宽度，特别是较薄层的宽度。这对于制造例如形成这种台面的辐射导向器和半导体二极管激光器是不利的起始情况。在根据本发明的方法中，通过选择性和优先蚀刻剂蚀刻两个半导体层的上部和较厚部分，相对于掩模基本上不发生脱落。随后，较低和较薄的半导体层和上半导体层的一部分通过基本上非选择性阳极氧化转化成半导体材料氧化物，其通过相对于形成的氧化物是非选择性的蚀刻剂除去但是对于半导体材料是选择性的。结果，获得具有基本上平坦的侧壁的台面，这些台面的横向尺寸由掩模的尺寸精确地确定。因此，特别是在InP / InGaAsP材料体系中特别有利的结果。当较薄的层形成所谓的多层量子阱结构的一部分时，可以非常有利地使用根据本发明的方法。在特定实施例中，在掩模上方设置另外的掩模，使得其突出超过掩模，台面的侧壁基本上是直的，结果该方法特别适合于通过 OMVPE在台面的任一侧上的另外的半导体层，这导致基本平坦的掩埋结构。

5. 发明授权

EP0602725B1 Method of manufacturing an optoelectronic semiconductor device 失效
标题翻译：一种用于制造光电半导体器件的工艺
公开(公告)号：EP0602725B1
公开(公告)日：1997-12-17
申请号：EP93203456.4
申请日：1993-12-09
申请人： Philips Electronics N.V.
发明人： Binsma, Johannes Jordanus Maria , van der Heijden, Johannes Martinus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01S3/085 , H01S3/025 , G02F1/313
CPC分类号： H01S5/026 , H01L33/0066 , H01S5/06256 , H01S5/125 , H01S5/2277 , H01S5/50

6. 发明公开

EP0602725A3 Method of manufacturing an optoelectronic semiconductor device 失效
标题翻译：制造光电半导体器件的方法。
公开(公告)号：EP0602725A3
公开(公告)日：1994-09-28
申请号：EP93203456.4
申请日：1993-12-09
申请人： Philips Electronics N.V.
发明人： Binsma, Johannes Jordanus Maria , van der Heijden, Johannes Martinus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01S3/085 , H01S3/025 , G02F1/313
CPC分类号： H01S5/026 , H01L33/0066 , H01S5/06256 , H01S5/125 , H01S5/2277 , H01S5/50
摘要： The invention relates to a method of manufacturing an optoelectronic semiconductor device whereby two comparatively thin layers are provided next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing process, a cladding layer being present over said thin layers. In the known method, first the one thin layer and the cladding layer are grown, the latter is locally removed, and the other thin layer and the cladding layer are then grown in that position. This method has the disadvantage that unevennesses (steps or openings) often arise at the surface of the layer structure above the transition between the thin layers. A method according to the invention is characterized in that in a first non-selective growing process the one layer and a small portion of the cladding layer are provided, these layers are locally removed in the etching process, and the other thin layer and a small portion of the cladding layer are provided in that location in the selective growing process, after which in a second non-selective growing process the major portion of the cladding layer is provided. The layer structure obtained has a substantially plane surface which is free from defects and is very suitable for further processing. The thin layers may be, inter alia, an active and a radiation-guiding layer. According to the invention, especially devices having a mesa structure can be manufactured with a high accuracy and yield.
摘要翻译：本发明涉及一种制造光电半导体器件的方法，其中通过非选择性生长工艺，蚀刻工艺和选择性生长工艺，在衬底上彼此相邻设置两个相对较薄的层，包层为存在于所述薄层之上。在已知的方法中，首先生长一个薄层和包覆层，然后将其局部去除，然后在该位置生长另一个薄层和包覆层。该方法的缺点在于，层间结构的表面上经常出现在薄层之间的过渡之上的不均匀（台阶或开口）。根据本发明的方法的特征在于，在第一非选择性生长工艺中，提供了一层和一小部分包覆层，这些层在蚀刻工艺中局部去除，另一薄层和小在选择性生长过程中在该位置设置包覆层的部分，之后在第二非选择性生长工艺中提供包覆层的主要部分。获得的层结构具有基本上平面的表面，其没有缺陷，非常适于进一步加工。特别地，薄层可以是有源和辐射引导层。根据本发明，特别是具有台面结构的装置可以以高精度和高产率制造。

7. 发明公开

EP0602725A2 Method of manufacturing an optoelectronic semiconductor device 失效
标题翻译： Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung。
公开(公告)号：EP0602725A2
公开(公告)日：1994-06-22
申请号：EP93203456.4
申请日：1993-12-09
申请人： Philips Electronics N.V.
发明人： Binsma, Johannes Jordanus Maria , van der Heijden, Johannes Martinus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01S3/085 , H01S3/025 , G02F1/313
CPC分类号： H01S5/026 , H01L33/0066 , H01S5/06256 , H01S5/125 , H01S5/2277 , H01S5/50
摘要： The invention relates to a method of manufacturing an optoelectronic semiconductor device whereby two comparatively thin layers are provided next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing process, a cladding layer being present over said thin layers. In the known method, first the one thin layer and the cladding layer are grown, the latter is locally removed, and the other thin layer and the cladding layer are then grown in that position.
This method has the disadvantage that unevennesses (steps or openings) often arise at the surface of the layer structure above the transition between the thin layers.
A method according to the invention is characterized in that in a first non-selective growing process the one layer and a small portion of the cladding layer are provided, these layers are locally removed in the etching process, and the other thin layer and a small portion of the cladding layer are provided in that location in the selective growing process, after which in a second non-selective growing process the major portion of the cladding layer is provided. The layer structure obtained has a substantially plane surface which is free from defects and is very suitable for further processing. The thin layers may be, inter alia, an active and a radiation-guiding layer. According to the invention, especially devices having a mesa structure can be manufactured with a high accuracy and yield.
摘要翻译：本发明涉及一种制造光电半导体器件的方法，其中通过非选择性生长工艺，蚀刻工艺和选择性生长工艺，在衬底上彼此相邻设置两个相对较薄的层，包层为存在于所述薄层之上。在已知的方法中，首先生长一个薄层和包覆层，然后将其局部去除，然后在该位置生长另一个薄层和包覆层。该方法的缺点在于，层间结构的表面上经常出现在薄层之间的过渡之上的不均匀（台阶或开口）。根据本发明的方法的特征在于，在第一非选择性生长工艺中，提供了一层和一小部分包覆层，这些层在蚀刻工艺中局部去除，另一薄层和小在选择性生长过程中在该位置设置包覆层的部分，之后在第二非选择性生长工艺中提供包覆层的主要部分。获得的层结构具有基本上平面的表面，其没有缺陷，非常适于进一步加工。特别地，薄层可以是有源和辐射引导层。根据本发明，特别是具有台面结构的装置可以以高精度和高产率制造。

8. 发明公开

EP0503729A3 Optoelectronic semiconductor device and method of manufacturing such a device 失效
标题翻译：光电半导体器件及其制造方法
公开(公告)号：EP0503729A3
公开(公告)日：1992-12-02
申请号：EP92200641.6
申请日：1992-03-06
申请人： Philips Electronics N.V.
发明人： Thijs, Petrus Johannes Adrianus , Van Leerdam, Aart , Binsma, Johannes Jordanus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01L21/20
CPC分类号： H01L33/0062 , H01S5/22
摘要： Optoelectronic semiconductor devices comprising a semiconductor (11) body with a semiconductor substrate (1) and a substantially plane semiconductor layer structure (2, 3, 4, 5A, 5B, 6) of III-V semiconductor materials situated thereon, a mesa (10) being formed at a surface (31) of the semiconductor body (11) by means of selective deposition and forming part of an optoelectronic element (32), are important components in optical communication and optical disc systems or bar code readers. The optoelectronic element (32) often is a semiconductor diode laser, but may alternatively comprise, for example, a radiation guide. A disadvantage of the known device is that parasitic deposition takes place next to the mesa (10) during the selective deposition. In addition, the device often contains so-called cleavage steps near the mesa (10). Another disadvantage is that the height and flatness of the upper side of the mesa (10) are not well controllable. According to the invention, such a device is characterized in that a second mesa (12) is present at at least two opposing sides of the mesa (10), separated from the first mesa by a groove (33), the surface area of the second mesa (12) in plan view being much greater than the surface area of the first mesa (10), which second mesa is also formed by means of selective deposition and simultaneously with the first mesa. It is a surprise to find that less parasitic deposition takes place than expected and that there is less damage near the first mesa after cleaving. When the distance between the first mesa (10) and the second mesa (12) is chosen to be sufficiently small, it is also found that the flatness and height of the first mesa are well controllable. The invention also relates to a method of manufacturing such a device.

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