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1. 发明公开

EP0503729A2 Optoelectronic semiconductor device and method of manufacturing such a device 失效
标题翻译：光电子半导体器件和制造这种装置的方法。
公开(公告)号：EP0503729A2
公开(公告)日：1992-09-16
申请号：EP92200641.6
申请日：1992-03-06
申请人： Philips Electronics N.V.
发明人： Thijs, Petrus Johannes Adrianus , Van Leerdam, Aart , Binsma, Johannes Jordanus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01L21/20
CPC分类号： H01L33/0062 , H01S5/22
摘要： Optoelectronic semiconductor devices comprising a semiconductor (11) body with a semiconductor substrate (1) and a substantially plane semiconductor layer structure (2, 3, 4, 5A, 5B, 6) of III-V semiconductor materials situated thereon, a mesa (10) being formed at a surface (31) of the semiconductor body (11) by means of selective deposition and forming part of an optoelectronic element (32), are important components in optical communication and optical disc systems or bar code readers. The optoelectronic element (32) often is a semiconductor diode laser, but may alternatively comprise, for example, a radiation guide.
A disadvantage of the known device is that parasitic deposition takes place next to the mesa (10) during the selective deposition. In addition, the device often contains so-called cleavage steps near the mesa (10). Another disadvantage is that the height and flatness of the upper side of the mesa (10) are not well controllable.
According to the invention, such a device is characterized in that a second mesa (12) is present at at least two opposing sides of the mesa (10), separated from the first mesa by a groove (33), the surface area of the second mesa (12) in plan view being much greater than the surface area of the first mesa (10), which second mesa is also formed by means of selective deposition and simultaneously with the first mesa. It is a surprise to find that less parasitic deposition takes place than expected and that there is less damage near the first mesa after cleaving. When the distance between the first mesa (10) and the second mesa (12) is chosen to be sufficiently small, it is also found that the flatness and height of the first mesa are well controllable. The invention also relates to a method of manufacturing such a device.
摘要翻译：具有半导体本体的半导体基板和位于其上的III-V半导体材料构成的基本上是平面的半导体层结构的光电半导体器件中，台面被在半导体本体的表面上，通过选择性淀积的装置和成形的光电子元件的一部分而形成，在光通信和光盘系统或条形码阅读器的重要组件。该光电元件经常是半导体二极管激光器，但也可以包括，例如，一个辐射引导。已知装置的一个缺点是没有寄生沉积选择性沉积期间进行下一台面的地方。此外，该设备经常包含附近的台面所谓的分裂步骤。另一个缺点是，DASS模高度和台面的上侧的平坦度不能很好控制的。。根据本发明，寻求装置的特征在于，做了第二台面存在于台面的至少两个相对的侧面，通过一个槽时，第二台面的在平面图中的表面积比大得多从第一台面分离第一台面，该第二台面所以通过选择性沉积的手段和同时，随着第一台面形成的表面积。它是要找到做更小的寄生沉积发生于预期，thatthere是裂开之后靠近第一台面损伤小惊喜。当选择第一台面与所述第二台面之间的距离为足够小，就这样发现，DASS模具的平整度和第一台面的高度是公可控的。因此本发明涉及一种制造设备的搜索的方法。

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