专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3171465A4 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： HALBLEITERLASERVORRICHTUNG
公开(公告)号：EP3171465A4
公开(公告)日：2017-08-23
申请号：EP15822750
申请日：2015-07-09
申请人： PANASONIC IP MAN CO LTD
发明人： YOSHIDA TAKAYUKI , WANG JING-BO
IPC分类号： H01S5/024 , H01L23/473 , H01S5/042 , H01S5/40
CPC分类号： H01S5/02423 , H01L23/473 , H01L2924/0002 , H01S5/024 , H01S5/02476 , H01S5/0425 , H01S5/4025 , H01S5/42 , H01L2924/00
摘要： A semiconductor laser device of the present disclosure includes a cooling plate, an insulating sheet, a first cooling block, and a first semiconductor laser element. The conductive cooling plate includes a water supply passage and a drain passage. The insulating sheet is provided to the cooling plate, and includes a first through hole connected to the water supply passage and a second through hole connected to the drain passage. A first cooling block is provided to the insulating sheet, includes therein a first tube connected to the first through hole and the second through hole, and is electrically conductive. The first semiconductor laser element is provided to the first cooling block. The first semiconductor laser element includes a first electrode, and a second electrode opposite to the first electrode. The first electrode is electrically connected to the first cooling block, and the cooling plate is at a floating potential.
摘要翻译：本公开的半导体激光器装置包括冷却板，绝缘片，第一冷却块和第一半导体激光器元件。导电冷却板包括供水通道和排水通道。绝缘片被设置在冷却板上，并且包括连接到供水通道的第一通孔和连接到排水通道的第二通孔。第一冷却块被提供给绝缘片，其中包括连接到第一通孔和第二通孔的第一管，并且是导电的。第一半导体激光元件被提供给第一冷却块。第一半导体激光元件包括第一电极以及与第一电极相对的第二电极。第一电极电连接到第一冷却块，并且冷却板处于浮动电位。

2. 发明公开

EP3240125A4 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP3240125A4
公开(公告)日：2018-01-03
申请号：EP15872119
申请日：2015-08-05
申请人： PANASONIC IP MAN CO LTD
发明人： UEDA NAOTO , OOMORI KOUJI , YOSHIDA TAKAYUKI , MOTOFUJI TAKUMA
IPC分类号： H01S5/024 , H01L21/60 , H01L23/373 , H01L23/40 , H01L23/48 , H01L25/07 , H01L25/18 , H01L29/861 , H01S5/022 , H01S5/042
CPC分类号： H01L23/3731 , H01L23/06 , H01L23/13 , H01L23/142 , H01L23/36 , H01L23/3736 , H01L23/4006 , H01L23/48 , H01L24/13 , H01L24/16 , H01L25/07 , H01L25/18 , H01L29/861 , H01L2023/4043 , H01L2023/4068 , H01L2224/13144 , H01L2224/16245 , H01L2924/0002 , H01L2924/1203 , H01L2924/12042 , H01L2924/15153 , H01L2924/16235 , H01L2924/16251 , H01S5/02236 , H01S5/024 , H01S5/042 , H01S5/0425 , H01L2924/00
摘要： A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

3. 发明公开

EP3211734A4 LASER MODULE 有权
公开(公告)号：EP3211734A4
公开(公告)日：2017-11-15
申请号：EP15853450
申请日：2015-08-05
申请人： PANASONIC IP MAN CO LTD
发明人： MOTOFUJI TAKUMA , YOSHIDA TAKAYUKI , UEDA NAOTO , OOMORI KOUJI
IPC分类号： H01S5/022 , G02B27/09 , H01S5/40
CPC分类号： H01S5/005 , G02B19/0057 , G02B27/0961 , G02B27/0966 , H01S5/022 , H01S5/02288 , H01S5/4025 , H01S5/4031
摘要： A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 µm to 120 µm on the light emission surface. The plurality of emitters have a pitch of 295 µm to 305 µm on the light emission surface.

4. 发明公开

EP2835882A4 SEMICONDUCTOR LASER APPARATUS AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：EP2835882A4
公开(公告)日：2015-09-02
申请号：EP13772683
申请日：2013-03-05
申请人： PANASONIC IP MAN CO LTD
发明人： YOSHIDA TAKAYUKI , UEDA NAOTO , OOMORI KOUJI , MOTOFUJI TAKUMA , KASAI TERUAKI
IPC分类号： H01S5/022 , H01S5/024 , H01S5/028 , H01S5/223
CPC分类号： H01S5/02461 , H01L24/29 , H01L24/32 , H01L2224/29111 , H01L2224/29144 , H01S5/0226 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/02492 , H01S5/028 , H01S5/2231 , H01L2924/013 , H01L2924/0105 , H01L2924/01047

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式