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1. 发明公开

EP3192135A1 VERFAHREN ZUM HERSTELLEN EINES LASERCHIPS 有权转让
公开(公告)号：EP3192135A1
公开(公告)日：2017-07-19
申请号：EP15760121.2
申请日：2015-08-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： GERHARD, Sven , ADLHOCH, Thomas , VEIT, Thomas , LELL, Alfred , PFEIFFER, Joachim , MUELLER, Jens , EICHLER, Christoph
IPC分类号： H01S5/02 , H01S5/22
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2201
摘要： The invention relates to a method for producing a laser chip (140) comprising steps for providing a semiconductor wafer (100) having a top side (101) and a bottom side (102), wherein the semiconductor wafer has a plurality of integrated laser diode structures (141), which are arranged one after the other along a defined fracture direction (10), for creating a plurality of recesses (200) on the top side of the semiconductor wafer, which recesses are arranged one after the other along the fracture direction, wherein each recess has a front boundary surface (210) and a rear boundary surface (220) following one another in the fracture direction, wherein the rear boundary surface is tilted by an angle between 95° and 170° in relation to the top side of the semiconductor wafer in the case of at least one recess, and for fracturing the semiconductor wafer in the fracture direction at a fracture plane that is oriented perpendicularly to the top side of the semiconductor wafer and that extends through the recesses.
摘要翻译：本发明涉及一种用于制造激光芯片（140）的方法，其包括用于提供具有顶侧（101）和底侧（102）的半导体晶片（100）的步骤，其中所述半导体晶片具有多个集成激光二极管（141），其沿着限定的断裂方向（10）一个接一个地布置，用于在所述半导体晶片的顶侧上形成多个凹部（200），所述凹部沿着所述断裂一个接一个地布置其中每个凹部具有在断裂方向上彼此接连的前边界表面（210）和后边界表面（220），其中后边界表面相对于顶部倾斜95°与170°之间的角度在半导体晶片的至少一个凹部的情况下，在断裂方向上在垂直于半导体晶片的顶面定向的断裂面处断裂半导体晶片，穿过凹处。

2. 发明公开

EP2539980A2 OPTOELEKTRONISCHER HALBLEITERCHIP 有权
标题翻译：光电子半导体芯片
公开(公告)号：EP2539980A2
公开(公告)日：2013-01-02
申请号：EP11704791.0
申请日：2011-02-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： EICHLER, Christoph , LERMER, Teresa , AVRAMESCU, Adrian Stefan
IPC分类号： H01S5/343 , H01S5/20
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/0655 , H01S5/2009 , H01S5/2027 , H01S5/3211 , H01S5/34333 , H01S2301/18
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1) the same comprises a substrate (2) and a semiconductor layer sequence (3) which is epitaxially grown on the substrate (2). The semiconductor layer sequence (3) is based on a nitride compound semiconductor material and includes at least one active zone (4) for generating electromagnetic radiation and at least one waveguide layer (5) which adjoins the active zone (4) indirectly or directly, thereby forming a waveguide (45). The semiconductor layer sequence (4) further comprises a p-cladding (6p) adjoining the waveguide layer (4) on a p-doped side or/and an n-cladding (6n) on an n-doped side of the active zone (4). The waveguide layer (5) adjoins the cladding (6n, 6p) indirectly or directly. An effective refractive index (n
eff ) of a mode (M) passing through the waveguide is higher than a refractive index of the substrate (2).

3. 发明公开

EP2415085A1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2415085A1
公开(公告)日：2012-02-08
申请号：EP10707304.1
申请日：2010-03-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： AVRAMESCU, Adrian, Stefan , QUEREN, Désirée , EICHLER, Christoph , SABATHIL, Matthias , LUTGEN, Stephan , STRAUSS, Uwe
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), said chip is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation during operation. Furthermore, in a direction parallel to a growth direction z of the semiconductor chip (1), the at least one active quantum well (2) has N successive zones (A), where N is a natural number higher than or equal to 2. At least two of the zones (A) of the active quantum well (2) have average indium contents c that are different from each other.
摘要翻译：在光电子半导体芯片（1）的至少一个实施例中，所述芯片基于氮化物材料系统并且包括至少一个有源量子阱（2）。该至少一个有源量子阱（2）被设计成在操作期间产生电磁辐射。此外，在与半导体芯片（1）的生长方向z平行的方向上，所述至少一个有源量子阱（2）具有N个连续区域（A），其中N是大于或等于2的自然数。有源量子阱（2）的至少两个区（A）具有彼此不同的平均铟含量c。

4. 发明公开

EP2248235A1 OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN BAUELEMENTS 失效
标题翻译：维生素HALBLEITERLASER VERFAHREN ZUR HERSTELLUNG EINES KANTENEMITTIERENDEN HALBLEITERLASERS
公开(公告)号：EP2248235A1
公开(公告)日：2010-11-10
申请号：EP09715490.0
申请日：2009-01-28
申请人： OSRAM Opto Semiconductors GmbH
发明人： AVRAMESCU, Adrian Stefan , EICHLER, Christoph , STRAUSS, Uwe , HÄRLE, Volker
IPC分类号： H01S5/02 , H01L33/00 , H01L21/20
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01S5/0217 , H01S5/0424 , H01S5/12 , H01S5/18308 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic component according to the invention comprises an epitaxial layer sequence (6) on the basis of a nitride compound semiconductor, said sequence having an active layer (4), wherein the epitaxial growth substrate (1) comprises A1
1-x Ga
x N, where 0 1-x (In
y Ga
1-y )
x N or In
1-x Ga
x N, where 0
摘要翻译：光电子部件包含基于具有活性层的氮化物化合物半导体和包含Al1-xGaxN的外延生长衬底的外延层序列，其中0

5. 发明公开

EP2191547A1 OPTOELEKTRONISCHES BAUELEMENT 有权
标题翻译： OPTOELEKTRONISCHES宝石
公开(公告)号：EP2191547A1
公开(公告)日：2010-06-02
申请号：EP08801251.3
申请日：2008-08-29
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , BRICK, Peter , EICHLER, Christoph
IPC分类号： H01S5/04 , H01S5/34 , H01S5/40
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) having a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) has a pump region (3) provided for generating a pump radiation, and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during the operation of the optoelectronic component (1). The emission radiation emerges in a lateral direction from the semiconductor body (2) having the semiconductor layer sequence during the operation of the optoelectronic component (1).
摘要翻译：提供了一种光电子器件（1），包括具有半导体层序列的半导体本体（2）。半导体本体（2）的半导体层序列具有用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。发射区域（4）和泵区域（3）一个在另一个之上布置。泵浦辐射在光电子器件（1）的操作期间光学泵浦发射区域（4）。发射辐射在光电子器件（1）的操作期间从具有半导体层序列的半导体本体（2）横向出现。

6. 发明授权

EP2415085B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2415085B1
公开(公告)日：2019-01-02
申请号：EP10707304.1
申请日：2010-03-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： AVRAMESCU, Adrian, Stefan , QUEREN, Désirée , EICHLER, Christoph , SABATHIL, Matthias , LUTGEN, Stephan , STRAUSS, Uwe
IPC分类号： H01L33/32 , B82Y20/00 , H01S5/34 , H01S5/343 , H01L33/06

7. 发明授权

EP2245657B1 OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERKÖRPERS 有权
公开(公告)号：EP2245657B1
公开(公告)日：2018-11-21
申请号：EP09712295.6
申请日：2009-02-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： BRÜNINGHOFF, Stefanie , EICHLER, Christoph
IPC分类号： H01L33/20 , H01L33/00 , H01L33/44 , H01S5/02 , H01S5/323
CPC分类号： H01L33/0075 , H01L33/20 , H01L33/44 , H01S5/0207 , H01S5/32341 , H01S2304/12

8. 发明授权

EP2111650B1 HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERCHIPS 有权
标题翻译：半导体芯片和用于制造半导体芯片的方法
公开(公告)号：EP2111650B1
公开(公告)日：2018-03-07
申请号：EP08706791.4
申请日：2008-01-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： EICHLER, Christoph , STRAUSS, Uwe , AVRAMESCU, Adrian Stefan
IPC分类号： H01L33/02 , H01L21/285 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/00
CPC分类号： H01L33/02 , H01L21/28575 , H01L33/0095 , H01L33/20 , H01L33/32 , H01L33/36 , H01L2933/0083

9. 发明授权

EP2193556B1 STRAHLUNG EMITTIERENDER HALBLEITERCHIP 有权
公开(公告)号：EP2193556B1
公开(公告)日：2017-07-26
申请号：EP08834637.4
申请日：2008-08-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： LELL, Alfred , EICHLER, Christoph , RUMBOLZ, Christian
IPC分类号： H01L33/44 , H01S5/22
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00

10. 发明公开

EP2011161A2 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 审中-公开
公开(公告)号：EP2011161A2
公开(公告)日：2009-01-07
申请号：EP07722298.2
申请日：2007-04-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： EICHLER, Christoph , MILLER, Stephan , STRAUSS, Uwe , HÄRLE, Volker , SABATHIL, Matthias
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Disclosed is an optoelectronic semiconductor component comprising a supporting substrate as well as an intermediate layer that provides adhesion between the supporting substrate and a component structure. The component structure encompasses an active layer that is used for generating radiation.
摘要翻译：公开了一种光电子半导体部件，其包括支撑衬底以及提供支撑衬底和部件结构之间的粘合的中间层。部件结构包含用于产生辐射的有源层。

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