专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3192135A1 VERFAHREN ZUM HERSTELLEN EINES LASERCHIPS 有权转让
公开(公告)号：EP3192135A1
公开(公告)日：2017-07-19
申请号：EP15760121.2
申请日：2015-08-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： GERHARD, Sven , ADLHOCH, Thomas , VEIT, Thomas , LELL, Alfred , PFEIFFER, Joachim , MUELLER, Jens , EICHLER, Christoph
IPC分类号： H01S5/02 , H01S5/22
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2201
摘要： The invention relates to a method for producing a laser chip (140) comprising steps for providing a semiconductor wafer (100) having a top side (101) and a bottom side (102), wherein the semiconductor wafer has a plurality of integrated laser diode structures (141), which are arranged one after the other along a defined fracture direction (10), for creating a plurality of recesses (200) on the top side of the semiconductor wafer, which recesses are arranged one after the other along the fracture direction, wherein each recess has a front boundary surface (210) and a rear boundary surface (220) following one another in the fracture direction, wherein the rear boundary surface is tilted by an angle between 95° and 170° in relation to the top side of the semiconductor wafer in the case of at least one recess, and for fracturing the semiconductor wafer in the fracture direction at a fracture plane that is oriented perpendicularly to the top side of the semiconductor wafer and that extends through the recesses.
摘要翻译：本发明涉及一种用于制造激光芯片（140）的方法，其包括用于提供具有顶侧（101）和底侧（102）的半导体晶片（100）的步骤，其中所述半导体晶片具有多个集成激光二极管（141），其沿着限定的断裂方向（10）一个接一个地布置，用于在所述半导体晶片的顶侧上形成多个凹部（200），所述凹部沿着所述断裂一个接一个地布置其中每个凹部具有在断裂方向上彼此接连的前边界表面（210）和后边界表面（220），其中后边界表面相对于顶部倾斜95°与170°之间的角度在半导体晶片的至少一个凹部的情况下，在断裂方向上在垂直于半导体晶片的顶面定向的断裂面处断裂半导体晶片，穿过凹处。

2. 发明公开

EP2697835A1 VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERKÖRPERS 有权转让
标题翻译：用于生产半导体主体
公开(公告)号：EP2697835A1
公开(公告)日：2014-02-19
申请号：EP12713140.7
申请日：2012-04-04
申请人： OSRAM Opto Semiconductors GmbH
发明人： PERZLMAIER, Korbinian , ZULL, Heribert , EBERHARD, Franz , VEIT, Thomas , KÄMPF, Mathias , DENNEMARCK, Jens
IPC分类号： H01L33/00 , H01S5/02 , H01L21/78
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01S5/0201 , H01L2924/00
摘要： A method for producing a semiconductor body (3) is specified, comprising the following steps: - providing a semiconductor wafer having at least two chip regions (1) and at least one separating region (2) arranged between the chip regions (1), wherein the semiconductor wafer comprises a layer sequence, the outermost layer of which has, at least within the separating region (2), a transmissive layer (8) that is transmissive to electromagnetic radiation, - carrying out at least one of the following measures: removing the transmissive layer (8) within the separating region (2), applying an absorbent layer (16) within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and - separating the chip regions (1) along the separating regions (2) by means of a laser.

3. 发明授权

EP2697835B1 VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERKÖRPERS 有权转让
公开(公告)号：EP2697835B1
公开(公告)日：2019-09-04
申请号：EP12713140.7
申请日：2012-04-04
申请人： OSRAM Opto Semiconductors GmbH
发明人： PERZLMAIER, Korbinian , ZULL, Heribert , EBERHARD, Franz , VEIT, Thomas , KÄMPF, Mathias , DENNEMARCK, Jens
IPC分类号： H01L33/00 , H01S5/02 , H01L21/78

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式