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2. 发明授权

EP0617455B1 Semiconductor device fabrication method 失效
标题翻译：一种制造半导体器件的方法
公开(公告)号：EP0617455B1
公开(公告)日：2002-01-16
申请号：EP94102597.5
申请日：1994-02-21
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Endo, Masayuki , Ohnishi, Teruhito , Nomura, Noboru
IPC分类号： G03F7/42 , H01L21/027 , H01L21/266
CPC分类号： H01L21/31111 , H01L21/0274 , H01L21/266

4. 发明授权

EP0643421B1 Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及其制造方法相关联的
公开(公告)号：EP0643421B1
公开(公告)日：2000-05-31
申请号：EP94112986.8
申请日：1994-08-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yano, Kousaku , Sugiyama, Tatsuo , Ueda, Satoshi , Nomura, Noboru
IPC分类号： H01L23/29 , H01L23/532 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002 , H01L2924/00

5. 发明公开

EP0954178A2 Method for distributing video information to mobile object by digital radio communication 有权
标题翻译： Methode zur Verteilung von Videoinformationen a einem mobilen Object durch digitaleFunkübertragung
公开(公告)号：EP0954178A2
公开(公告)日：1999-11-03
申请号：EP99108383.3
申请日：1999-04-29
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Nohara, Akira , Nomura, Noboru , Suzuki, Akihiro
IPC分类号： H04N7/173 , H04N7/20
CPC分类号： H04N21/2407 , H04N5/38 , H04N7/17318 , H04N21/2543 , H04N21/26613 , H04N21/41407 , H04N21/47202 , H04N21/6131 , H04N21/6181
摘要： In a method for distributing video information from a central station unit placed on the ground to at least one mobile terminal unit comprising a terminal unit mounted on a mobile object, a request for distribution of the video information is transmitted as request information from the mobile terminal unit to the central station unit by radio communication, and the requested video information is distributed from the central station unit to the mobile terminal unit by digital radio communication. In this method, the video information is hierarchized, and part of the video information in a hierarchical rank according to read right information transmitted together with the request from a mobile terminal is made readable. Further, accounting on the distributed video information in the central station is performed based on accounting information from the mobile terminal. Furthermore, the mobile terminal transmits information indicating the receiving environment of the terminal to the central station together with the request, and the central station changes the method for ensuring transmission quality relating to code errors in the video information distributed to the mobile terminal, in accordance with the receiving environment information.
摘要翻译：在将来自放置在地面上的中央站单元的视频信息分发到包括安装在移动对象上的终端单元的至少一个移动终端单元的方法中，作为来自移动终端的请求信息发送视频信息分发请求单元通过无线电通信到中心站单元，并且所请求的视频信息通过数字无线电通信从中央站单元分发到移动终端单元。在该方法中，视频信息被分层，并且根据与来自移动终端的请求一起发送的读取权利信息的分级等级的视频信息的一部分变得可读。此外，基于来自移动终端的会计信息来执行中央电台的分布式视频信息的记录。此外，移动终端根据请求向中心站发送指示终端的接收环境的信息，并且中心站根据分配给移动终端的视频信息中的代码错误相关的确保传输质量的方法进行改变与接收环境信息。

6. 发明公开

EP0893834A3 Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
标题翻译：一种半导体装置，包括半导体材料的微针的集合体
公开(公告)号：EP0893834A3
公开(公告)日：1999-05-06
申请号：EP98119139.8
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Eriguchi, Kofi , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964
摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second- dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

7. 发明公开

EP0892445A3 Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
标题翻译： Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial
公开(公告)号：EP0892445A3
公开(公告)日：1999-05-06
申请号：EP98119144.8
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Eriguchi, Kofi , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964
摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).
摘要翻译：在硅衬底（1）上形成二氧化硅膜（5），然后通过LPCVD（6）在其上沉积各自具有极小直径的由硅制成的半球状晶粒。在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可获得显着的量子尺寸效应。因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

8. 发明公开

EP0887866A3 Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
公开(公告)号：EP0887866A3
公开(公告)日：1999-05-06
申请号：EP98119140.6
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Eriguchi, Kofi , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964
摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

9. 发明授权

EP0652600B1 Method of manufacturing an aggregate of semiconductor micro-needles 失效
标题翻译：一种用于制造半导体材料的微针的集合体过程
公开(公告)号：EP0652600B1
公开(公告)日：1999-04-28
申请号：EP94117295.9
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Eriguchi, Koji , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964

10. 发明公开

EP0892446A2 Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles 失效
标题翻译：一种用于制造半导体材料的微针的集合体及其制造具有这种聚集体的半导体器件的方法的工艺
公开(公告)号：EP0892446A2
公开(公告)日：1999-01-20
申请号：EP98119145.5
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Eriguchi, Kofi , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964
摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter. are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

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