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1. 发明授权

EP2942652B1 Layer having a non-linear taper and method of fabrication 有权转让
公开(公告)号：EP2942652B1
公开(公告)日：2018-10-10
申请号：EP14175029.9
申请日：2014-06-30
申请人： LioniX International B.V.
发明人： Heideman, Rene Gerrit , Hoekman, Marcel
IPC分类号： G02B6/12 , G02B6/122 , G02B6/136
CPC分类号： G02B6/1228 , G02B6/136 , G02B2006/12173 , G02B2006/12176 , G02B2006/12195
摘要： A method for forming a non-linear thickness-profile in a first layer (110) of a first material is disclosed. The method comprises forming an accelerator layer (202) of a second material on the first layer and forming a mask layer (204) disposed on the accelerator layer, wherein the mask layer enables the accelerator layer to expose the first layer to a first etchant (210) in a first region, where the exposure time for each point along a first axis (z) varies non-linearly as a function of distance from a first point (z=0) on the first axis. Since the time for which the first layer is exposed to the first etch in the first region is non-linear, the thickness of the first layer in the first region changes non-linearly along the first axis.

2. 发明公开

EP3296777A1 OPTICAL WAVEGUIDE HAVING A WIDE BRILLOUIN BANDWIDTH 审中-实审
标题翻译：光学波导具有宽广的布里渊带宽
公开(公告)号：EP3296777A1
公开(公告)日：2018-03-21
申请号：EP17180384.4
申请日：2017-07-07
申请人： Honeywell International Inc.
发明人： PUCKETT, Matthew Wade , SALIT, Mary K.
IPC分类号： G02B6/036 , G02B6/122 , G02B6/132
CPC分类号： G02F1/125 , G01C19/721 , G02B6/036 , G02B6/122 , G02B6/132 , G02B6/136 , G02B2006/12176 , G02F2201/06
摘要： An embodiment of a waveguide has a Brillouin bandwidth, and includes cladding and a core. The cladding includes first layers of a first material, each first layer having a physical characteristic of approximately a first value, and includes second layers of a second material, each second layer having the physical characteristic of approximately a second value, the second layers alternating with the first layers such that the Brillouin bandwidth is wider than the Brillouin bandwidth would be if the cladding excluded the first layers or excluded the second layers. For example, the first and second cladding layers can be formed from different materials, or can be formed having different values of a physical characteristic such as thickness, acoustic velocity, or index of refraction. Such a waveguide can facilitate alignment of the waveguide's optical bandwidth with the waveguide's Brillouin bandwidth because the Brillouin bandwidth is widened compared to conventional waveguides.
摘要翻译：波导的实施例具有布里渊带宽，并且包括包层和核心。包层包括第一材料的第一层，每个第一层具有近似第一值的物理特性，并且包括第二材料的第二层，每个第二层具有近似第二值的物理特性，第二层与第二材料交替如果包层不包括第一层或排除第二层，则第一层使得布里渊带宽比布里渊带宽更宽。例如，第一包覆层和第二包覆层可以由不同材料形成，或者可以形成为具有不同的物理特性值，例如厚度，声速或折射率。这种波导可以促进波导的光学带宽与波导的布里渊带宽对准，因为布里渊带宽比传统波导宽。

3. 发明授权

EP1606661B1 OPTICAL WAVELENGTH DIVISION MULTIPLEXER/DEMULTIPLEXER DEVICE 有权
标题翻译：光波长分配复用器/解复用器
公开(公告)号：EP1606661B1
公开(公告)日：2017-03-08
申请号：EP04721227.9
申请日：2004-03-17
申请人： QinetiQ Limited
发明人： JENKINS, Richard Michael, QinetiQ Limited , MCNIE, Mark Edward, QinetiQ Limited
IPC分类号： G02B6/293 , G02B6/12 , G02B6/32 , G02B6/35
CPC分类号： G02B6/356 , G02B6/10 , G02B6/12007 , G02B6/122 , G02B6/2813 , G02B6/29368 , G02B6/2938 , G02B6/322 , G02B6/3518 , G02B6/353 , G02B6/3566 , G02B6/3576 , G02B6/3594 , G02B6/3596 , G02B2006/12038 , G02B2006/12061 , G02B2006/12104 , G02B2006/12109 , G02B2006/12176

4. 发明公开

EP2312357A3 Optical devices and methods of fabricating the same 有权
标题翻译： Optische Vorrichtungen und Herstellungsverfahrendafür
公开(公告)号：EP2312357A3
公开(公告)日：2014-04-09
申请号：EP10152992.3
申请日：2010-02-09
申请人： Electronics and Telecommunications Research Institute
发明人： HAN, Young-Tak , PARK, Sang Ho , LEE, Dong-Hun , SHIN, Jang Uk , HAN, Sang-Pil , BAEK, Yongsoon
IPC分类号： G02B6/42
CPC分类号： G02B6/136 , G02B6/423 , G02B6/4231 , G02B2006/12176 , H01L24/11 , H01L2924/12042 , H01L2924/12043 , H01L2924/00
摘要： Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region.
摘要翻译：提供了一种光学装置。光学装置包括具有波导区域和安装区域的基板，在基板的波导区域上包括下包层和上包层的平面光波电路（PLC）波导，包覆层和上包层，通过蚀刻衬底的安装区域上的下包覆层限定的平台，所述露台包括互锁部分，安装在衬底的安装区域上的光学有源芯片，光学活性物质芯片，其中包括芯片芯片，以及设置在光学有源芯片的安装表面上的芯片对准标记。光学有源芯片通过在平台的互锁部分和光学有源芯片的芯片对准标记之间的互锁对准并且安装在安装区域上。

5. 发明授权

EP1621906B1 Composant incluant un élément optoélectronique positionné à affleurement et recouvert d'un guide d'onde 有权
标题翻译：设备与齐平安装是通过光波导覆盖optelektronischem元件
公开(公告)号：EP1621906B1
公开(公告)日：2011-10-26
申请号：EP05291573.3
申请日：2005-07-22
申请人： e-KLO
发明人： Coudray, Paul
IPC分类号： G02B6/42 , H01L27/15
CPC分类号： G02B6/43 , G02B6/4206 , G02B2006/12085 , G02B2006/12107 , G02B2006/12176

6. 发明公开

EP2324494A1 SALICIDE STRUCTURES FOR HEAT-INFLUENCED SEMICONDUCTOR APPLICATIONS 审中-公开
标题翻译： SALICIDSTRUKTURENFÜRWÄRMEBEEINFLUSSTEHALBLEITERANWENDUNGEN
公开(公告)号：EP2324494A1
公开(公告)日：2011-05-25
申请号：EP09810588.5
申请日：2009-08-27
申请人： BAE SYSTEMS Information and Electronic Systems Integration Inc.
发明人： CAROTHERS, Daniel, N.
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： G02B6/136 , G02B6/122 , G02B6/132 , G02B6/1342 , G02B2006/12061 , G02B2006/12135 , G02B2006/12142 , G02B2006/12169 , G02B2006/12176 , G02F1/0147 , G02F1/025 , G02F1/2257
摘要： A salicide heater structure for use in therrao-optic and other he at- influenced semiconductor devices is disclosed. In one example embodiment, a system is provided that includes a silicon substrate, and a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device. Another example embodiment is a salicide semiconductor system that includes a silicon substrate and a salicide structure formed on the substrate, wherein the salicide structure is for delivering heat radiation to a heat-influenced semiconductor device.
摘要翻译：公开了一种用于热光和其他受热影响的半导体器件的自对准硅加热器结构。在一个示例实施例中，提供了一种系统，其包括硅衬底和形成在衬底上的用于将热辐射传递到受热影响的半导体器件的硅化物加热元件。另一个示例性实施例是一种自对准半导体系统，其包括硅衬底和形成在衬底上的自对准硅化物结构，其中所述自对准硅结构用于将热辐射传递到受热影响的半导体器件。

7. 发明公开

EP2312357A2 Optical devices and methods of fabricating the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：EP2312357A2
公开(公告)日：2011-04-20
申请号：EP10152992.3
申请日：2010-02-09
申请人： Electronics and Telecommunications Research Institute
发明人： HAN, Young-Tak , PARK, Sang Ho , LEE, Dong-Hun , SHIN, Jang Uk , HAN, Sang-Pil , BAEK, Yongsoon
IPC分类号： G02B6/42
CPC分类号： G02B6/136 , G02B6/423 , G02B6/4231 , G02B2006/12176 , H01L24/11 , H01L2924/12042 , H01L2924/12043 , H01L2924/00
摘要： Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region.

8. 发明公开

EP1674902A4 MULTICHANNEL OPTICAL PATH CHANGING DEVICE AND ITS PRODUCTION METHOD 审中-公开
标题翻译：多通道光WEGWECHSELEINRICHTUNG及其制造方法
公开(公告)号：EP1674902A4
公开(公告)日：2010-03-17
申请号：EP04792303
申请日：2004-10-13
申请人： CENTRAL GLASS CO LTD
发明人： TANAKA TORU , NANAI HIDEHISA , YAMAMOTO YUJI , NISHIMURA MOTOYASU , SAKAGUCHI SHIGEKI
IPC分类号： G02B6/12 , G02B6/122 , G02B6/125
CPC分类号： G02B6/122 , G02B6/12002 , G02B6/125 , G02B2006/12176

9. 发明公开

EP1761812A1 METHOD FOR MAKING AN OPTICAL WAVEGUIDE ASSEMBLY WITH INTEGRAL ALIGNMENT FEATURES 审中-公开
标题翻译：方法用于制造光学组件具有整体对准部件
公开(公告)号：EP1761812A1
公开(公告)日：2007-03-14
申请号：EP05757393.3
申请日：2005-04-28
申请人： 3M Innovative Properties Company
发明人： SMITH, Terry L. , ZHANG, Jun-Ying , PARIKH, Rutesh D. , LARSEN, Jeremy K.
IPC分类号： G02B6/30 , G02B6/42 , G02B6/136
CPC分类号： G02B6/30 , G02B6/42 , G02B2006/12176
摘要： An optical waveguide assembly (20) has integral alignment features (22) . The waveguide assembly is formed by fabricating a waveguide on a substrate (26) prior to forming the alignment features, removing a portion of the waveguide to reveal the substrate, and forming the alignment feature in the substrate. The planar waveguide assembly (20) with integral alignment features (22) is made by coating a substrate (26) with an etch stop layer (28) . An alignment feature pattern (30) is formed in the etch stop layer (28) . The alignment feature pattern (30) is fabricated using photolithography and an etch process. After the alignment feature pattern (30) is fabricated in the etch stop layer (28), the waveguides (32) are grown on top of the substrate (26) and etch stop layer (28) with alignment feature pattern (30) . The waveguides (32) are next etched in areas where the alignment feature pattern (30) was previously fabricated to expose the pattern (30) . Another etch is performed to create the precision alignment features (22) using the previously fabricated alignment feature pattern (30) . The alignment features (22) are V-grooves, U-shaped, trapezoidal or rectangular grooves.

10. 发明授权

EP0892446B1 Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles 失效
标题翻译：一种用于制造半导体材料的微针的集合体及其制造具有这种聚集体的半导体器件的方法的工艺
公开(公告)号：EP0892446B1
公开(公告)日：2006-05-24
申请号：EP98119145.5
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Eriguchi, Koji , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964

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