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    • 5. 发明公开
    • Light-emitting device
    • 发光装置
    • EP2605296A3
    • 2015-02-11
    • EP12197046.1
    • 2012-12-13
    • LG Innotek Co., Ltd.
    • LIM, Hyun SooCHO, Kwon TaePARK, Su Ik
    • H01L33/44H01L33/22
    • H01L33/58H01L33/20H01L33/22H01L33/44H01L2224/48091H01L2933/0083H01L2933/0091H01L2924/00014
    • A light-emitting device, a method of fabricating the light-emitting device, a light-emitting device package and a lighting system are provided. The light-emitting device may include a substrate 105; a first conductivity type semiconductor layer 12 disposed on the substrate 105; an active layer 114 disposed on the first conductivity type semiconductor layer 12; a second conductivity type semiconductor layer 16 disposed on the active layer 114; a first electrode 131 disposed on the first conductivity type semiconductor layer 112; a second electrode 132 disposed on the second conductivity type semiconductor layer 116; a first light extraction pattern P provided on a top surface of the substrate 105; and a second light extraction pattern 150 provided on sides of the substrate 105.
    • 提供了发光装置,制造该发光装置的方法,发光装置封装和照明系统。 发光器件可以包括衬底105; 设置在衬底105上的第一导电类型半导体层12; 设置在第一导电类型半导体层12上的有源层114; 设置在有源层114上的第二导电类型半导体层16; 设置在第一导电类型半导体层112上的第一电极131; 设置在第二导电类型半导体层116上的第二电极132; 提供在基板105的顶表面上的第一光提取图案P; 以及设置在衬底105的侧面上的第二光提取图案150。
    • 6. 发明公开
    • SEMICONDUCTOR DEVICE
    • EP3490012A1
    • 2019-05-29
    • EP17831367.2
    • 2017-07-20
    • LG Innotek Co., Ltd.
    • PARK, Su Ik
    • H01L33/00H01L33/38H01L33/10H01L33/22H01L33/36H01L33/02
    • One embodiment discloses a semiconductor device comprising: a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses arranged up to a partial area of the first conductive semiconductor layer by penetrating the second conductive semiconductor layer and the active layer, and a second recess arranged between the plurality of first recesses; a plurality of first electrodes arranged inside the plurality of first recesses, and electrically connected with the first conductive semiconductor layer; a plurality of second electrodes electrically connected to the second conductive semiconductor layer; and a reflective layer arranged inside the second recess, wherein the sum of the area of the plurality of first recesses and the area of the second recess is 60% or less of the maximum area in a first direction of the semiconductor structure, the area of the plurality of first recesses and the area of the second recess are the areas formed on the lower surface of the semiconductor structure, and the first direction is vertical to the thickness direction of the semiconductor structure.