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1. 发明公开

EP3022779A1 PC LED WITH OPTICAL ELEMENT AND WITHOUT SUBSTRATE CARRIER 有权转让
标题翻译： PC与LED光学元件与无衬底载体
公开(公告)号：EP3022779A1
公开(公告)日：2016-05-25
申请号：EP14766210.0
申请日：2014-07-17
申请人： Koninklijke Philips N.V.
发明人： BASIN, Grigoriy , HAQUE, Ashim Shatil , KAGEYAMA, Hideo , MORAN, Brendan Jude , BHARDWAJ, Jyoti Kiron
IPC分类号： H01L33/62 , H01L33/00
摘要： Intermediate removable placement and processing structures are provided to enable the formation of optical elements upon light emitting elements, including the formation of a reflective layer beneath the optical elements. These removable placement and processing structures are substantially independent of the particular dimensions of the produced light emitting device, allowing their re-use in a variety of applications. The resultant light emitting device includes the light emitting element,the optical element with reflector, and, optionally, a wavelength conversion material, but does not include remnants of the placement and processing structures, such as a carrier substrate.

2. 发明公开

EP2917938A1 WAVELENGTH CONVERTED LIGHT EMITTING DEVICE 有权转让
标题翻译：长光发射装置
公开(公告)号：EP2917938A1
公开(公告)日：2015-09-16
申请号：EP13820902.8
申请日：2013-10-25
申请人： Koninklijke Philips N.V.
发明人： SCHRICKER, April Dawn , MAI, Kim Kevin , BASIN, Grigoriy
IPC分类号： H01L25/075
摘要： A structure according to embodiments of the invention includes a plurality of LEDs attached to a mount. A wavelength converting layer is disposed over the LEDs. A transparent layer is disposed over the wavelength converting layer. Reflective material is disposed between neighboring LEDs.

3. 发明公开

EP2751852A1 METHOD OF BONDING A SUBSTRATE TO A SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： METHOD FOR结合底物的半导体发光器件
公开(公告)号：EP2751852A1
公开(公告)日：2014-07-09
申请号：EP12766151.0
申请日：2012-07-30
申请人： Koninklijke Philips N.V.
发明人： BASIN, Grigoriy , EPLER, John Edward , MARTIN, Paul Scott
IPC分类号： H01L33/00 , H01L33/22 , H01L33/50
CPC分类号： H01L33/48 , H01L21/6836 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/50 , H01L33/501 , H01L33/505 , H01L33/507 , H01L2224/0345 , H01L2224/0346 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/27436 , H01L2224/29191 , H01L2224/32225 , H01L2224/83005 , H01L2224/8309 , H01L2224/83097 , H01L2224/83191 , H01L2224/83209 , H01L2224/94 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2933/0091 , H01L2924/00014 , H01L2224/27 , H01L2224/83 , H01L2924/01074 , H01L2924/00
摘要： A method according to embodiments of the invention includes positioning a flexible film (48) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure (13) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate (50) via the flexible film (48). After bonding, the flexible film (48) is in direct contact with the semiconductor structures (13). The method further includes dividing the wafer after bonding the wafer to the substrate (50).

4. 发明公开

EP2748277A1 PHOSPHOR IN WATER GLASS FOR LEDs 有权转让
标题翻译： EINEM WASSERGLASFÜRLED中的磷光体
公开(公告)号：EP2748277A1
公开(公告)日：2014-07-02
申请号：EP12813517.5
申请日：2012-12-05
申请人： Koninklijke Philips N.V.
发明人： KUIPER, Stein , BASIN, Grigoriy
IPC分类号： C09K11/59
CPC分类号： H01L33/50 , C01B33/32 , C03C4/12 , C03C14/004 , C03C2214/04 , C09K11/592 , H01L33/502 , H01L2933/0091
摘要： The invention provides a lighting unit comprising a light source and a light conversion layer, wherein the light source is configured to provide light source light and comprises a light emitting diode (LED), wherein the light conversion layer comprises an alkali silicate matrix containing a particulate luminescent material, and wherein the light conversion layer is configured to convert at least part of the light source light into luminescent material light.
摘要翻译：本发明提供了一种包括光源和光转换层的照明单元，其中所述光源被配置为提供光源光并且包括发光二极管（LED），其中所述光转换层包括含有颗粒的碱性硅酸盐基质发光材料，并且其中所述光转换层被配置为将所述光源光的至少一部分转换成发光材料光。

5. 发明公开

EP2689458A1 PATTERNED UV SENSITIVE SILICONE-PHOSPHOR LAYER OVER LEDS 有权转让
标题翻译： GEMUSTERTE UV-EMPFINDLICHE SILICONPHOSCHICCHICHTÜBERLEDS
公开(公告)号：EP2689458A1
公开(公告)日：2014-01-29
申请号：EP12714374.1
申请日：2012-03-20
申请人： Koninklijke Philips N.V.
发明人： BASIN, Grigoriy , MARTIN, Paul, Scott
IPC分类号： H01L25/075 , H01L33/50
CPC分类号： H01L33/50 , H01L33/501 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2224/13 , H01L2224/73204 , H01L2224/73265 , H01L2933/0041 , H01L2933/0091
摘要： LED dies are mounted a single submount tile (or wafer). The LED dies have a light emitting top surface. A uniformly thick layer of UV sensitive silicone infused with phosphor is then deposited over the tile, including over the tops and sides of the LED dies. Only the silicone/phosphor over the top and sides of the LED dies is desired, so the silicone/phosphor directly on the tile needs to be removed. The silicone/phosphor layer is then masked to expose the areas that are to remain to UV light, which creates a cross-linked silicone. The unexposed silicone/phosphor layer is then dissolved with a solvent and removed from the tile surface. The silicone/phosphor layer may be defined to expose a wire bond electrode on the LED dies. The tile is ultimately singulated to produce individual phosphor-converted LEDs.
摘要翻译： LED芯片安装在单个底座瓦片（或晶片）上。 LED管芯具有发光顶表面。然后将沉积有磷光体的均匀厚的紫外线敏感硅胶层沉积在瓦片上，包括在LED管芯的顶部和侧面。仅需要在LED管芯的顶部和侧面上的硅氧烷/磷光体，因此需要去除直接在瓷砖上的硅氧烷/磷光体。然后将硅氧烷/磷光体层掩蔽以暴露出保持为UV光的区域，这产生交联的硅氧烷。然后将未曝光的硅氧烷/磷光体层用溶剂溶解并从瓷砖表面除去。可以限定硅氧烷/磷光体层以暴露LED管芯上的引线接合电极。瓦片最终被单独化以产生单个的磷光体转换的LED。

6. 发明授权

EP2689458B1 PATTERNED UV SENSITIVE SILICONE-PHOSPHOR LAYER OVER LEDS, AND METHOD FOR FABRICATING THE SAME 有权转让
标题翻译：在LED上形成图案化的UV敏感硅氧烷 - 荧光层，以及制造相同的方法
公开(公告)号：EP2689458B1
公开(公告)日：2018-01-10
申请号：EP12714374.1
申请日：2012-03-20
申请人： Koninklijke Philips N.V.
发明人： BASIN, Grigoriy , MARTIN, Paul, Scott
IPC分类号： H01L33/00 , H01L33/50 , H01L33/54 , H01L33/62
CPC分类号： H01L33/50 , H01L33/501 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2224/13 , H01L2224/73204 , H01L2224/73265 , H01L2933/0041 , H01L2933/0091
摘要： LED dies are mounted a single submount tile (or wafer). The LED dies have a light emitting top surface. A uniformly thick layer of UV sensitive silicone infused with phosphor is then deposited over the tile, including over the tops and sides of the LED dies. Only the silicone/phosphor over the top and sides of the LED dies is desired, so the silicone/phosphor directly on the tile needs to be removed. The silicone/phosphor layer is then masked to expose the areas that are to remain to UV light, which creates a cross-linked silicone. The unexposed silicone/phosphor layer is then dissolved with a solvent and removed from the tile surface. The silicone/phosphor layer may be defined to expose a wire bond electrode on the LED dies. The tile is ultimately singulated to produce individual phosphor-converted LEDs.

7. 发明公开

EP3092666A1 GLUELESS LIGHT EMITTING DEVICE WITH PHOSPHOR CONVERTER 有权转让
标题翻译： LEIMLOSE LICHTEMITTIERENDE VORRICHTUNG MIT PHOSPHORWANDLER
公开(公告)号：EP3092666A1
公开(公告)日：2016-11-16
申请号：EP14837008.3
申请日：2014-12-30
申请人： Koninklijke Philips N.V.
发明人： BASIN, Grigoriy , MARTIN, Paul , CHOI, Han Ho
IPC分类号： H01L33/50 , H01L33/60
CPC分类号： H01L33/505 , H01L33/0095 , H01L33/58 , H01L33/60 , H01L2933/0041 , H01L2933/0058
摘要： A multi-stage lamination process is used to laminate a wavelength conversion film (220) to a transparent substrate (230), and subsequently to a light emitting element (110). The wavelength conversion film (220) may be an uncured phosphor-embedded silicone polymer, and the lamination process includes heating the polymer so that it adheres to the transparent substrate (230), but is not fully cured. The phosphor-laminated transparent substrate (230) is sliced/diced and the wavelength conversion film (220) of each diced substrate is placed upon each light emitting element (110). The semi-cured wavelength conversion film (220) is then laminated to the light emitting element (110) via heating, consequently curing the phosphor film. Throughout the process, no glue is used, and the optical losses associated with glue material are not introduced.
摘要翻译：使用多级层压方法将波长转换膜（220）层压到透明基板（230）上，随后层叠到发光元件（110）。波长转换膜（220）可以是未固化的磷光体嵌入的硅氧烷聚合物，并且层压工艺包括加热聚合物使其粘附到透明基材（230）上，但不完全固化。将磷光体层压的透明基板（230）切片/切割，并将每个切割的基板的波长转换膜（220）放置在每个发光元件（110）上。然后通过加热将半固化波长转换膜（220）层压到发光元件（110）上，从而固化荧光膜。在整个过程中，不使用胶水，并且不引入与胶料相关的光学损耗。

8. 发明公开

EP3092665A1 WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
标题翻译：波长转换发光半导体器件
公开(公告)号：EP3092665A1
公开(公告)日：2016-11-16
申请号：EP14830664.0
申请日：2014-12-16
申请人： Koninklijke Philips N.V.
发明人： MORAN, Brendan Jude , SHCHEKIN, Oleg Borisovich , BASIN, Grigoriy , KMETEC, Jeffrey Dellert
IPC分类号： H01L33/50
CPC分类号： H01L33/502 , H01L24/96 , H01L25/167 , H01L27/0248 , H01L33/0095 , H01L33/32 , H01L33/405 , H01L33/501 , H01L33/505 , H01L33/56 , H01L33/60 , H01L2224/24 , H01L2224/24137 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
摘要： A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.

9. 发明公开

EP2984685A2 TOP EMITTING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
标题翻译： VON OBEN EMITTIERENDES，LICHTEMITTIERENDES HALBLEITERBAUELEMENT
公开(公告)号：EP2984685A2
公开(公告)日：2016-02-17
申请号：EP14716970.0
申请日：2014-03-31
申请人： Koninklijke Philips N.V.
发明人： MORAN, Brendan Jude , DE SAMBER, Marc Andre , BASIN, Grigoriy , SWEEGERS, Norbertus Antonius Maria , BUTTERWORTH, Mark Melvin , VAMPOLA, Kenneth , MAZUIR, Clarisse
IPC分类号： H01L33/20 , H01L33/44
CPC分类号： H01L33/20 , H01L25/0753 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/46 , H01L33/465 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0091
摘要： Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
摘要翻译：本发明的实施例包括包含夹在n型区域和p型区域之间的发光层的半导体结构。生长衬底附着到半导体结构。生长衬底具有至少一个成角度的侧壁。反射层设置在成角度的侧壁上。从半导体结构和生长衬底提取的大部分光通过生长衬底的第一表面提取。

10. 发明授权

EP2266149B1 UNDERFILL PROCESS FOR FLIP-CHIP LED 有权转让
标题翻译： FLIP-CHIP LED的底部填充工艺
公开(公告)号：EP2266149B1
公开(公告)日：2017-08-23
申请号：EP09722834.0
申请日：2009-03-13
申请人： Koninklijke Philips N.V. , Philips Lumileds Lighting Company LLC
发明人： BASIN, Grigoriy , DIANA, Frederic , MARTIN, Paul, S. , SIMONIAN, Dima
IPC分类号： H01L33/54 , H01L33/56 , H01L33/00
CPC分类号： H01L33/54 , H01L24/97 , H01L33/0079 , H01L33/56 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00

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