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1. 发明公开

EP3033775A1 LED DOME WITH INNER HIGH INDEX PILLAR 有权转让
标题翻译： LED-KUPPEL MITINNENSÄULEMIT HOHEM BRECHUNGSINDEX
公开(公告)号：EP3033775A1
公开(公告)日：2016-06-22
申请号：EP14752409.4
申请日：2014-07-02
申请人： Koninklijke Philips N.V.
发明人： LOPEZ, Toni , VAMPOLA, Kenneth
IPC分类号： H01L33/54 , H01L33/58 , H01L33/00 , H01L33/56
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/502 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60 , H01L2933/0058
摘要： Affixed over a transparent growth substrate (34) of an LED die (30) is a transparent rectangular pillar (40), having a footprint approximately the same size as the LED die. The pillar height is greater than a length of the LED die, and the pillar has an index (n) approximately equal to that of the substrate (e.g., 1.8), so there is virtually no TIR at the interface due to the matched indices. Surrounding the pillar and the LED die is a lens portion (42) having a diameter between 1.5-3 times the length of the LED die. The index of the lens portion is about 0.8 times the index of the substrate. The lens portion may have a dome shape (46). A large portion of the light exiting the substrate is internally reflected off the lateral pillar/cylinder interface and exits the top surface of the pillar. Thus, the emission is narrowed and light extraction efficiency is increased.
摘要翻译：贴合在LED管芯（30）的透明生长衬底（34）上的是具有与LED管芯大致相同的尺寸的透明矩形柱（40）。支柱高度大于LED芯片的长度，并且柱子的折射率（n）大致等于基板的折射率（例如1.8），所以由于匹配的指数，界面上几乎没有TIR。所述支柱和所述LED模具周围是直径在所述LED芯片的长度的1.5-3倍之间的透镜部分（42）。透镜部分的折射率是基板指数的0.8倍。透镜部分可以具有圆顶形状（46）。离开衬底的大部分光从侧柱/圆柱体界面内部反射离开柱的上表面。因此，发射变窄，光提取效率提高。

2. 发明公开

EP3111487A1 METHOD OF FORMING A WAVELENGTH CONVERTED LIGHT EMITTING DEVICE 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER VORRICHTUNG ZUR EMISSION VONWENENLÄNGENUMGEWANDELTEMLICHT
公开(公告)号：EP3111487A1
公开(公告)日：2017-01-04
申请号：EP15707419.6
申请日：2015-01-20
申请人： Koninklijke Philips N.V.
发明人： SCHRICKER, April Dawn , SHCHEKIN, Oleg Borisovich , VAMPOLA, Kenneth , BECHTEL, Hans-Helmut , SALMASO, Guido
IPC分类号： H01L33/50
摘要： A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.
摘要翻译：根据本发明的实施例的方法包括在波长转换陶瓷晶片（30）的表面上设置支撑层（32）。波长转换陶瓷晶片和支撑层被切割（42）以形成波长转换部件。波长转换构件附接到发光器件。在将波长转换构件附接到发光器件之后，移除支撑层。

3. 发明公开

EP2831932A1 LIGHT EMITTING DEVICE WITH WAVELENGTH CONVERTING SIDE COAT 有权转让
标题翻译：发光的波长变换涂料页设备
公开(公告)号：EP2831932A1
公开(公告)日：2015-02-04
申请号：EP13721410.2
申请日：2013-03-26
申请人： Koninklijke Philips N.V.
发明人： VAMPOLA, Kenneth , CHOI, Han Ho
IPC分类号： H01L33/50
摘要： Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

4. 发明公开

EP2997606A1 LED WITH SCATTERING FEATURES IN SUBSTRATE 有权转让
标题翻译： LED在基板上具有散射特性
公开(公告)号：EP2997606A1
公开(公告)日：2016-03-23
申请号：EP14726207.5
申请日：2014-05-05
申请人： Koninklijke Philips N.V. , Philips GmbH
发明人： VAMPOLA, Kenneth , BECHTEL, Hans-Helmut
IPC分类号： H01L33/02 , H01L33/50
CPC分类号： H01L33/60 , H01L33/02 , H01L33/36 , H01L33/501 , H01L33/502 , H01L33/507 , H01L33/508 , H01L2933/0091
摘要： In one embodiment, the transparent growth substrate (38) of an LED die is formed to have light scattering areas (40A-C), such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides (42A, 42B) of the substrate to reduce light guiding. Another embodiment comprises a replacement substrate may be formed to include reflective particles in selected areas where there are no corresponding light generating areas in the LED semiconductor layers such as—type metal contacts (28). This prevents reabsorption into absorbing regions of the semiconductor layer thereby enhancing external efficiency of the device. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile (20) that is affixed to the top of the LED.
摘要翻译：在一个实施例中，LED管芯的透明生长衬底（38）形成为具有光散射区域（40A-C），例如由激光形成的空隙。在另一个实施例中，生长衬底被移除并且被形成有光散射区域的另一衬底替换。在一个实施例中，光散射区域形成在LED管芯的光吸收区域上方，以减少在这些吸收区域上以及衬底的侧面（42A，42B）上的入射光的量，以减少光引导。另一个实施例包括替代衬底可以被形成为包括在LED半导体层中没有对应的光产生区域的选定区域中的反射颗粒，例如类型金属触点（28）。这防止了重吸收到半导体层的吸收区域，从而提高了器件的外部效率。 3D结构可以通过堆叠包含反射区域的衬底层来形成。衬底可以是固定到LED顶部的透明衬底或磷光体瓦片（20）。

5. 发明公开

EP3201953A1 LIGHT SOURCE WITH TUNABLE EMISSION SPECTRUM 有权转让
标题翻译：具有可调谐发射谱的光源
公开(公告)号：EP3201953A1
公开(公告)日：2017-08-09
申请号：EP15777841.6
申请日：2015-09-29
申请人： Koninklijke Philips N.V.
发明人： SHCHEKIN, Oleg Borisovich , CHOI, Han-Ho , VAMPOLA, Kenneth , JIN, Fahong
IPC分类号： H01L33/50 , H01L25/075 , H05B33/08
CPC分类号： F21K9/64 , F21Y2113/13 , F21Y2113/17 , F21Y2115/10 , H01L25/0753 , H01L33/50 , H01L2924/0002 , H05B33/0866 , H01L2924/00
摘要： A lighting system according to embodiments of the invention includes first and second light emitting diodes. The first and second light emitting diodes have different peak wavelengths and emit light of the same color. The system further includes a third light emitting diode that emits light of a different color from the first and second light emitting diodes. A wavelength converting element is disposed in a path of light emitted by the first and second light emitting diodes.
摘要翻译：根据本发明实施例的照明系统包括第一和第二发光二极管。第一和第二发光二极管具有不同的峰值波长并发射相同颜色的光。该系统还包括发射与第一和第二发光二极管不同颜色的光的第三发光二极管。波长转换元件设置在由第一和第二发光二极管发射的光的路径中。

6. 发明公开

EP3195374A1 LIGHT EMITTING DEVICE ON A MOUNT WITH A REFLECTIVE LAYER 有权转让
标题翻译：具有反射层的发光装置
公开(公告)号：EP3195374A1
公开(公告)日：2017-07-26
申请号：EP15770764.7
申请日：2015-09-15
申请人： Koninklijke Philips N.V. , Lawrence, Nathaniel T. , Shchekin, Oleg , Vampola, Kenneth
发明人： LAWRENCE, Nathaniel T. , SHCHEKIN, Oleg , VAMPOLA, Kenneth
IPC分类号： H01L33/54 , H01L33/60
CPC分类号： H01L33/60 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/58 , H01L2933/0058
摘要： Embodiments of the invention include a semiconductor light emitting diode (LED) attached to a top surface of a mount. A multi-layer reflector is disposed on the top surface of the mount adjacent to the LED. The multi-layer reflector includes layer pairs of alternating layers of low index of refraction material and high index of refraction material. A portion of the top surface in direct contact with the multi-layer reflector is non-reflective.
摘要翻译：本发明的实施例包括附接到安装件的顶表面的半导体发光二极管（LED）。多层反射器设置在靠近LED的支架的顶表面上。多层反射器包括低折射率材料和高折射率材料的交替层的层对。与多层反射器直接接触的顶面的一部分是非反射的。

7. 发明授权

EP2997606B1 LED WITH SCATTERING FEATURES IN SUBSTRATE 有权转让
标题翻译： LED MIT STREENCLEMENTEN IN EINEM SUBSTRAT
公开(公告)号：EP2997606B1
公开(公告)日：2016-07-13
申请号：EP14726207.5
申请日：2014-05-05
申请人： Koninklijke Philips N.V. , Philips GmbH
发明人： VAMPOLA, Kenneth , BECHTEL, Hans-Helmut
IPC分类号： H01L33/02 , H01L33/50
CPC分类号： H01L33/60 , H01L33/02 , H01L33/36 , H01L33/501 , H01L33/502 , H01L33/507 , H01L33/508 , H01L2933/0091
摘要： In one embodiment, the transparent growth substrate (38) of an LED die is formed to have light scattering areas (40A-C), such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides (42A, 42B) of the substrate to reduce light guiding. Another embodiment comprises a replacement substrate may be formed to include reflective particles in selected areas where there are no corresponding light generating areas in the LED semiconductor layers such as—type metal contacts (28). This prevents reabsorption into absorbing regions of the semiconductor layer thereby enhancing external efficiency of the device. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile (20) that is affixed to the top of the LED.
摘要翻译：在一个实施例中，LED管芯的透明生长衬底形成为具有光散射区域，例如由激光形成的空隙。在另一个实施方案中，生长衬底被去除，并被由光散射区域形成的另一个衬底代替。在一个实施例中，光散射区域形成在LED管芯的光吸收区域上方，以减少这些吸收区域上的入射光的量，并且在衬底的两侧以减少光引导。替代基板可以形成为在选定区域中包括反射粒子。可以通过堆叠包含反射区域的衬底层来形成3D结构。衬底可以是固定到LED的顶部的透明衬底或荧光砖。

8. 发明公开

EP2997610A1 LIGHT EMITTING DEVICE WITH AN OPTICAL ELEMENT AND A REFLECTOR 有权转让
标题翻译： EINEM REFLEKTOR LICHTEMITTIERENDE VORRICHTUNG MIT EINEM OPTISCHEN ELEMENT UND EINEM REFLEKTOR
公开(公告)号：EP2997610A1
公开(公告)日：2016-03-23
申请号：EP14729051.4
申请日：2014-05-15
申请人： Koninklijke Philips N.V.
发明人： BHAT, Jerome Chandra , BASIN, Grigoriy , VAMPOLA, Kenneth
IPC分类号： H01L33/58 , H01L33/60 , H01L33/44
CPC分类号： H01L33/60 , H01L33/44 , H01L33/50 , H01L33/58 , H01L2933/0041 , H01L2933/0058
摘要： A structure according to embodiments of the invention includes a semiconductor light emitting device and an optical element disposed over the semiconductor light emitting device. The semiconductor light emitting device is disposed in a recess in the optical element. A reflector is disposed on a bottom surface of the optical element. A method according to embodiments of the invention includes disposing a semiconductor light emitting device on a substrate and forming a reflector adjacent the semiconductor light emitting device. An optical element is formed over the semiconductor light emitting device. The semiconductor light emitting device is removed from the substrate.
摘要翻译：根据本发明的实施例的结构包括半导体发光器件和设置在半导体发光器件上的光学元件。半导体发光器件设置在光学元件的凹部中。反射器设置在光学元件的底表面上。根据本发明的实施例的方法包括将半导体发光器件设置在衬底上并形成邻近半导体发光器件的反射器。在半导体发光器件上形成光学元件。半导体发光器件从衬底移除。

9. 发明公开

EP3025380A1 FLIP-CHIP SIDE EMITTING LED 有权转让
标题翻译： SEITENEMITTIERENDE FLIP-CHIP-LED
公开(公告)号：EP3025380A1
公开(公告)日：2016-06-01
申请号：EP14759305.7
申请日：2014-07-09
申请人： Koninklijke Philips N.V.
发明人： YU, Jianghong , VAN LETH, Nicolaas joseph martin , CENNINI, Giovanni , VAMPOLA, Kenneth , CORNELISSEN, Hugo Johan
IPC分类号： H01L33/46 , H01L33/50 , H01L33/44
摘要： Application of a wavelength conversion element is substantially independent of the fabrication of a side-emitting light emitting device. In an example embodiment, the wavelength conversion element is situated around the periphery of a non-wavelength converting lightguide that is situated above the light emitting surface. One or more specular and/or diffusing reflectors are used to direct the light in the lightguide toward the wavelength conversion element at the periphery. In another embodiment, an interference filter may be used to provide predominantly side-emitted light at interfaces between the elements of the light emitting device.
摘要翻译：波长转换元件的应用基本上与侧发光发光器件的制造无关。在示例性实施例中，波长转换元件围绕位于发光表面上方的非波长转换光导的周边。使用一个或多个镜面和/或扩散反射器将光导中的光引导到周边处的波长转换元件。在另一个实施例中，可以使用干涉滤光器来在发光器件的元件之间的界面处主要提供侧发光。

10. 发明公开

EP2984685A2 TOP EMITTING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
标题翻译： VON OBEN EMITTIERENDES，LICHTEMITTIERENDES HALBLEITERBAUELEMENT
公开(公告)号：EP2984685A2
公开(公告)日：2016-02-17
申请号：EP14716970.0
申请日：2014-03-31
申请人： Koninklijke Philips N.V.
发明人： MORAN, Brendan Jude , DE SAMBER, Marc Andre , BASIN, Grigoriy , SWEEGERS, Norbertus Antonius Maria , BUTTERWORTH, Mark Melvin , VAMPOLA, Kenneth , MAZUIR, Clarisse
IPC分类号： H01L33/20 , H01L33/44
CPC分类号： H01L33/20 , H01L25/0753 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/46 , H01L33/465 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0091
摘要： Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
摘要翻译：本发明的实施例包括包含夹在n型区域和p型区域之间的发光层的半导体结构。生长衬底附着到半导体结构。生长衬底具有至少一个成角度的侧壁。反射层设置在成角度的侧壁上。从半导体结构和生长衬底提取的大部分光通过生长衬底的第一表面提取。

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