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    • 2. 发明公开
    • Fine structure and fabricating method thereof
    • Feinstruktur und Verfahren zu ihrer Herstellung
    • EP0884768A2
    • 1998-12-16
    • EP98304603.8
    • 1998-06-10
    • Japan Science and Technology CorporationTanaka, Shun-ichiro
    • Wakayama, YutakaTanaka, Shun-ichiro
    • H01L21/20H01L29/12
    • H01L21/02378H01L21/02381H01L21/02425H01L21/02433H01L21/02532H01L21/02645H01L21/02653
    • Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
    • 在半导体衬底上处理金属微粒。 通过在真空中进行热处理,将半导体基板的构成元素溶解到金属微粒中形成固溶体,进一步形成由半导体金属构成的均匀的液相(液滴)。 通过退火,半导体衬底的构成元素从半导体 - 金属液滴中析出。 因此,可以获得包括半导体衬底,在半导体衬底上的任意位置选择性地外延生长的半导体精细投影和选择性地设置在半导体精细投影上的金属层的精细投影复合结构。 可以根据需要移除金属层。 这种精细投影复合结构在例如超高集成度半导体器件或量子尺寸器件中具有适用性。
    • 3. 发明公开
    • Ultrafine particle structure and production method thereof
    • 超凡的Teilchenstruktur和Verfahren zu ihrer Herstellung
    • EP0841703A2
    • 1998-05-13
    • EP97307559.1
    • 1997-09-26
    • Japan Science and Technology CorporationTanaka, Shun-ichiro
    • Tanaka, Shun-ichiroXu, BingShe
    • H01L29/12H01L21/26
    • H01L23/53204B81C1/00492H01L21/314H01L21/32051H01L21/76838H01L23/528H01L2924/0002Y10T428/12181Y10T428/25Y10T428/256Y10T428/257H01L2924/00
    • Ultrafine particle structure composed of a plurality of ultrafine particles disposed continuously on a substrate forming a desired shape. A plurality of the ultrafine particles consist of ultrafine particles of metal, semiconductor, compound, and the like. The ultrafine particles constituting an ultrafine particle structure are produced by disposing a target material having a slit of desired shape on a substrate and irradiating a high energy beam in a slanting direction to an inner wall surface of the target material. Constituent atoms or molecules liberated from the target material by irradiation of a high energy beam in a slanting direction are disposed continuously as a plurality of ultrafine particles on the substrate. By contacting or at least partially bonding between adjacent ultrafine particles, ultrafine particle structure is formed. Such an ultrafine particle structure contributes greatly to realization of ultrafine wirings, ultrafine devices, ultrafine functional materials, and the like which utilize the ultrafine particles.
    • 超细颗粒结构由连续设置在形成所需形状的基材上的多个超细颗粒组成。 多个超细颗粒由金属,半导体,化合物等的超微粒子组成。 通过将具有所需形状的狭缝的目标材料设置在基板上,并将倾斜方向的高能束照射到目标材料的内壁面上,来制造构成超微粒子结构的超微粒子。 通过沿倾斜方向照射高能束而从目标材料释放的成分原子或分子作为多个超细颗粒连续地设置在基板上。 通过在相邻的超细颗粒之间接触或至少部分地结合,形成超微粒子结构。 这种超微粒子结构对于利用超微粒子的超细布线,超微细器件,超细功能材料等的实现有很大的帮助。
    • 6. 发明公开
    • Graphite intercalation compounds and their production
    • Graphiteinlagerungsverbindungen und deren Herstellung
    • EP0736487A1
    • 1996-10-09
    • EP96302397.3
    • 1996-04-03
    • RESEARCH DEVELOPMENT CORPORATION OF JAPANTanaka, Shun-ichiro
    • Xu, BingSheTanaka, Shun-ichiro
    • C01B31/00
    • B82Y30/00B82Y40/00C01B32/15C01B32/22
    • An onion-like graphite 2 is produced by irradiating an electron beam to impinge upon an amorphous carbon 3 under an active aluminium nanoparticle 1. By further irradiating the electron beam upon the onion-like graphite 2 to intercalate aluminium atoms which are a constituent of the aluminium nanoparticle 1 within a space between the (001) plane and the (002) plane of the onion-like graphite 2 having a layer structure, an intercalation compound 4 is produced. Alternatively, after the aluminium nanoparticles have been disposed on the onion-like graphite and impinged thereupon by an electron beam by further irradiating the electron beam to intercalate aluminium atoms in the space between the (001) plane and the (002) plane of the onion-like graphite having a layer structure, the intercalation compounds can be produced.
    • 通过照射电子束来冲击活性铝纳米颗粒1下的无定形碳3来制造洋葱状石墨2.通过进一步将电子束照射到洋葱状石墨2上以插入铝原子,其为 在具有层结构的洋葱状石墨2的(001)面和(002)面之间的空间内的铝纳米颗粒1,制备插层化合物4。 或者,在将铝纳米颗粒设置在洋葱状石墨上并通过进一步照射电子束以在铝(001)面和(002)面之间的空间内插入铝原子的情况下通过电子束照射 具有层状结构的石墨,可以制造插层化合物。