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1. 发明授权

EP0841703B1 Ultrafine particle structure and production method thereof 失效
标题翻译：超微粒子的结构和它们的制备方法
公开(公告)号：EP0841703B1
公开(公告)日：2004-11-17
申请号：EP97307559.1
申请日：1997-09-26
申请人： Japan Science and Technology Corporation , KABUSHIKI KAISHA TOSHIBA
发明人： Tanaka, Shun-ichiro , Xu, BingShe
IPC分类号： H01L29/12 , H01L21/26 , C23C14/04 , B22F1/00
CPC分类号： H01L23/53204 , B81C1/00492 , H01L21/314 , H01L21/32051 , H01L21/76838 , H01L23/528 , H01L2924/0002 , Y10T428/12181 , Y10T428/25 , Y10T428/256 , Y10T428/257 , H01L2924/00

2. 发明公开

EP0841703A3 Ultrafine particle structure and production method thereof 失效
标题翻译：超微粒子的结构和它们的制备方法
公开(公告)号：EP0841703A3
公开(公告)日：2001-04-11
申请号：EP97307559.1
申请日：1997-09-26
申请人： Japan Science and Technology Corporation , KABUSHIKI KAISHA TOSHIBA
发明人： Tanaka, Shun-ichiro , Xu, BingShe
IPC分类号： H01L29/12 , H01L21/26 , C23C14/04 , B22F1/00
CPC分类号： H01L23/53204 , B81C1/00492 , H01L21/314 , H01L21/32051 , H01L21/76838 , H01L23/528 , H01L2924/0002 , Y10T428/12181 , Y10T428/25 , Y10T428/256 , Y10T428/257 , H01L2924/00
摘要： Ultrafine particle structure composed of a plurality of ultrafine particles disposed continuously on a substrate forming a desired shape. A plurality of the ultrafine particles consist of ultrafine particles of metal, semiconductor, compound, and the like. The ultrafine particles constituting an ultrafine particle structure are produced by disposing a target material having a slit of desired shape on a substrate and irradiating a high energy beam in a slanting direction to an inner wall surface of the target material. Constituent atoms or molecules liberated from the target material by irradiation of a high energy beam in a slanting direction are disposed continuously as a plurality of ultrafine particles on the substrate. By contacting or at least partially bonding between adjacent ultrafine particles, ultrafine particle structure is formed. Such an ultrafine particle structure contributes greatly to realization of ultrafine wirings, ultrafine devices, ultrafine functional materials, and the like which utilize the ultrafine particles.

3. 发明授权

EP0679610B1 Fullerene composite 失效
标题翻译： Fullerenkomposit
公开(公告)号：EP0679610B1
公开(公告)日：1998-03-11
申请号：EP95302883.4
申请日：1995-04-27
申请人： Japan Science and Technology Corporation , Tanaka, Shun-ichiro
发明人： Tanaka, Shun-ichiro
IPC分类号： C01B31/02 , C04B35/83
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/152 , C04B35/83 , Y10S423/40 , Y10S977/734 , Y10S977/735 , Y10S977/742 , Y10S977/776 , Y10S977/778 , Y10S977/888 , Y10T428/2918

4. 发明公开

EP0884768A2 Fine structure and fabricating method thereof 失效
标题翻译： Feinstruktur und Verfahren zu ihrer Herstellung
公开(公告)号：EP0884768A2
公开(公告)日：1998-12-16
申请号：EP98304603.8
申请日：1998-06-10
申请人： Japan Science and Technology Corporation , Tanaka, Shun-ichiro
发明人： Wakayama, Yutaka , Tanaka, Shun-ichiro
IPC分类号： H01L21/20 , H01L29/12
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/02425 , H01L21/02433 , H01L21/02532 , H01L21/02645 , H01L21/02653
摘要： Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
摘要翻译：在半导体衬底上处理金属微粒。通过在真空中进行热处理，将半导体基板的构成元素溶解到金属微粒中形成固溶体，进一步形成由半导体金属构成的均匀的液相（液滴）。通过退火，半导体衬底的构成元素从半导体 - 金属液滴中析出。因此，可以获得包括半导体衬底，在半导体衬底上的任意位置选择性地外延生长的半导体精细投影和选择性地设置在半导体精细投影上的金属层的精细投影复合结构。可以根据需要移除金属层。这种精细投影复合结构在例如超高集成度半导体器件或量子尺寸器件中具有适用性。

5. 发明公开

EP0841703A2 Ultrafine particle structure and production method thereof 失效
标题翻译：超凡的Teilchenstruktur和Verfahren zu ihrer Herstellung
公开(公告)号：EP0841703A2
公开(公告)日：1998-05-13
申请号：EP97307559.1
申请日：1997-09-26
申请人： Japan Science and Technology Corporation , Tanaka, Shun-ichiro
发明人： Tanaka, Shun-ichiro , Xu, BingShe
IPC分类号： H01L29/12 , H01L21/26
CPC分类号： H01L23/53204 , B81C1/00492 , H01L21/314 , H01L21/32051 , H01L21/76838 , H01L23/528 , H01L2924/0002 , Y10T428/12181 , Y10T428/25 , Y10T428/256 , Y10T428/257 , H01L2924/00
摘要： Ultrafine particle structure composed of a plurality of ultrafine particles disposed continuously on a substrate forming a desired shape. A plurality of the ultrafine particles consist of ultrafine particles of metal, semiconductor, compound, and the like. The ultrafine particles constituting an ultrafine particle structure are produced by disposing a target material having a slit of desired shape on a substrate and irradiating a high energy beam in a slanting direction to an inner wall surface of the target material. Constituent atoms or molecules liberated from the target material by irradiation of a high energy beam in a slanting direction are disposed continuously as a plurality of ultrafine particles on the substrate. By contacting or at least partially bonding between adjacent ultrafine particles, ultrafine particle structure is formed. Such an ultrafine particle structure contributes greatly to realization of ultrafine wirings, ultrafine devices, ultrafine functional materials, and the like which utilize the ultrafine particles.
摘要翻译：超细颗粒结构由连续设置在形成所需形状的基材上的多个超细颗粒组成。多个超细颗粒由金属，半导体，化合物等的超微粒子组成。通过将具有所需形状的狭缝的目标材料设置在基板上，并将倾斜方向的高能束照射到目标材料的内壁面上，来制造构成超微粒子结构的超微粒子。通过沿倾斜方向照射高能束而从目标材料释放的成分原子或分子作为多个超细颗粒连续地设置在基板上。通过在相邻的超细颗粒之间接触或至少部分地结合，形成超微粒子结构。这种超微粒子结构对于利用超微粒子的超细布线，超微细器件，超细功能材料等的实现有很大的帮助。

6. 发明公开

EP0884768A3 Fine structure and fabricating method thereof 失效
标题翻译：精细结构和它们的制备方法
公开(公告)号：EP0884768A3
公开(公告)日：2000-01-05
申请号：EP98304603.8
申请日：1998-06-10
申请人： Japan Science and Technology Corporation , Tanaka, Shun-ichiro
发明人： Wakayama, Yutaka , Tanaka, Shun-ichiro
IPC分类号： H01L21/20 , H01L29/12 , C30B19/00 , C30B1/00
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/02425 , H01L21/02433 , H01L21/02532 , H01L21/02645 , H01L21/02653
摘要： Dispose a fine metal particle (2) on a semiconductor substrate (1). By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution (3), resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection (4) epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer (2') disposed selectively on the semiconductor fine projection, can be obtained. The metal layer (2') can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.

7. 发明授权

EP0736487B1 Graphite intercalation compounds and their production 失效
标题翻译：石墨层间化合物和它们的制备
公开(公告)号：EP0736487B1
公开(公告)日：1999-03-03
申请号：EP96302397.3
申请日：1996-04-03
申请人： Japan Science and Technology Corporation , Tanaka, Shun-ichiro
发明人： Xu, BingShe , Tanaka, Shun-ichiro
IPC分类号： C01B31/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/22

8. 发明公开

EP0808682A3 Ultrafine particle and production method thereof, production method of ultrafine particle bonded body, and fullerene and production method thereof 失效
标题翻译：超微粒子，其制备方法，生产这些颗粒和富勒烯和它们的制备方法制造的模塑制品的
公开(公告)号：EP0808682A3
公开(公告)日：2000-03-01
申请号：EP97303487.9
申请日：1997-05-22
申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN , KABUSHIKI KAISHA TOSHIBA
发明人： Tanaka, Shun-ichiro , Xu, BingShe
IPC分类号： B22F9/02 , B22F1/00 , C01B31/02 , B01J19/12 , B22F9/06 , B01J19/08
CPC分类号： B82Y30/00 , B01J19/081 , B01J19/121 , B01J19/122 , B22F1/0018 , B22F9/02 , B22F9/06 , B22F2999/00 , B82Y40/00 , C01B32/15 , C01B32/152 , Y10T428/12493 , Y10T428/2982 , Y10T428/30 , B22F2202/11
摘要： A target material having pores is disposed on a substrate. A high energy beam (5) is irradiated to the inner walls of the pores (4) of the target material (3) in a slanting direction. Constituent atoms or molecules of the target material are detached from it to obtain a single or plurality of ultrafine particles separated as a unit substance. The superfine particles are formed at desired positions corresponding to the pores of the target material. Besides, by using an amorphous carbon substrate as the substrate, fullerenes such as an onion-like graphite are formed with the ultrafine particles as nucleation points. When the high energy beam is irradiated to at least two neighboring metal ultrafine particles, these metal ultrafine particles are bonded mutually. When the obtained metal ultrafine particle bonded body has a corresponding grain boundary, the high energy beam is further irradiated to lower value Σ of the corresponding grain boundary of the bonded interface. Besides, the metal ultrafine particle bonded body can also be made into a monocrystal grain or a polycrystal grain. Such a metal ultrafine particle bonded body is stable.

9. 发明授权

EP0235682B2 Aluminium nitride sintered body having conductive metallized layer 失效
标题翻译：氮化铝烧结体具有导电金属化层
公开(公告)号：EP0235682B2
公开(公告)日：1997-11-12
申请号：EP87102344.6
申请日：1987-02-19
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Horiguchi, Akihiro , Kasori, Mituo , Ueno, Fumio , Sato, Hideki , Mizunoya, Nobuyuki , Endo, Mitsuyoshi , Tanaka, Shun-ichiro , Shinozaki, Kazuo
IPC分类号： C04B41/88 , C04B41/87 , H01L21/48
CPC分类号： C04B41/87 , C04B41/5053 , C04B41/51 , C04B41/5133 , C04B41/88 , H01L21/4846 , H01L23/15 , H01L23/49866 , H01L2924/0002 , H05K1/092 , Y10S428/901 , Y10T428/24917 , Y10T428/24926 , H01L2924/00

10. 发明授权

EP0235682B1 Aluminium nitride sintered body having conductive metallized layer 失效
标题翻译：氮化铝烧结体具有导电金属化层。
公开(公告)号：EP0235682B1
公开(公告)日：1994-04-20
申请号：EP87102344.6
申请日：1987-02-19
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Horiguchi, Akihiro , Kasori, Mituo , Ueno, Fumio , Sato, Hideki , Mizunoya, Nobuyuki , Endo, Mitsuyoshi , Tanaka, Shun-ichiro , Shinozaki, Kazuo
IPC分类号： C04B41/88 , C04B41/87 , H01L21/48
CPC分类号： C04B41/87 , C04B41/5053 , C04B41/51 , C04B41/5133 , C04B41/88 , H01L21/4846 , H01L23/15 , H01L23/49866 , H01L2924/0002 , H05K1/092 , Y10S428/901 , Y10T428/24917 , Y10T428/24926 , H01L2924/00

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