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1. 发明授权

EP0277318B1 Semiconductor electro-optical conversion device 失效
标题翻译：半导体电光转换器件
公开(公告)号：EP0277318B1
公开(公告)日：1993-06-23
申请号：EP87118154.1
申请日：1987-12-08
申请人： International Business Machines Corporation
发明人： Kirchner, Peter Daniel , Marks, Ronald Franklin , Pettit, George David , Woodall, Jerry Mac Pherson , Wright, Steven Lorenz
IPC分类号： H01L31/0216 , H01L21/203
CPC分类号： H01L33/44 , H01L31/02161

2. 发明授权

EP0164720B1 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact 失效
标题翻译：用于互联化合物半导体的OHMIC接触和提供这种接触的方法
公开(公告)号：EP0164720B1
公开(公告)日：1989-01-11
申请号：EP85107128.2
申请日：1985-06-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Woodall, Jerry MacPherson
IPC分类号： H01L29/40 , H01L21/285
CPC分类号： H01L29/452 , H01L21/28575 , Y10S148/084 , Y10S148/14 , Y10S438/915

3. 发明公开

EP0277318A1 Semiconductor electro-optical conversion device 失效
标题翻译： Elektrooptisches Halbleiterbauelement。
公开(公告)号：EP0277318A1
公开(公告)日：1988-08-10
申请号：EP87118154.1
申请日：1987-12-08
申请人： International Business Machines Corporation
发明人： Kirchner, Peter Daniel , Marks, Ronald Franklin , Pettit, George David , Woodall, Jerry Mac Pherson , Wright, Steven Lorenz
IPC分类号： H01L31/0216 , H01L21/203
CPC分类号： H01L33/44 , H01L31/02161
摘要： An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.
摘要翻译：一种半导体电光转换器件层的环境接口，其是光学透明的，导电的和化学钝化的，由具有2至20nm厚的层间隔I> 1电子伏特的元素半导体制成。示出了在GaAlAs（4）上具有10nm Si层（6）的由GaAlAs转换器覆盖的GaAs（2）。

4. 发明公开

EP0164720A2 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact 失效
标题翻译：用于金属间化合物半导体和工艺这种接触的制备欧姆接触。
公开(公告)号：EP0164720A2
公开(公告)日：1985-12-18
申请号：EP85107128.2
申请日：1985-06-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Woodall, Jerry MacPherson
IPC分类号： H01L29/40 , H01L21/285
CPC分类号： H01L29/452 , H01L21/28575 , Y10S148/084 , Y10S148/14 , Y10S438/915
摘要： A metallic ohmic contact (1) is formed on the surface of an intermetallic compound semiconductor body (2) in which the net donor density of an amphoteric dopant is greater in a thin surface region extending into the body from the interface (3) between the contact (1) and the body (2) than in the bulk of the body (2). Preferably, the surface region has a net donor density greater than 5 x 10 19 atoms per cc and is 2 to 5 nm thick. The contact can be formed by growing a body of gallium arsenide in the presence of an arsenic overpressure and a source of germanium or silicon and then depositing a metal on the surface of the body.
摘要翻译：的金属欧姆接触（1）上形成有金属间化合物半导体主体（2），其中两性掺杂剂的净施主密度大于在薄表面区域延伸到本体从之间的界面（3）的表面上接触件（1）和所述主体（2）比在本体中主体（2）的。优选地，该表面区域具有净施主密度低于5×10 <1> <9>每立方厘米原子更大的和为2至5纳米厚。的接触可以通过在过压的砷和锗或硅源的存在下生长砷化镓的主体，然后沉积所述主体的所述表面上的金属形成。

5. 发明公开

EP0278290A2 Submicron dimension compound senmiconductor fabrication 失效
标题翻译： Herstellung von zusammengesetzter Halbleiterstruktur mit submikrometrischen Dimensionen。
公开(公告)号：EP0278290A2
公开(公告)日：1988-08-17
申请号：EP88100945.0
申请日：1988-01-22
申请人： International Business Machines Corporation
发明人： Fossum, Eric Roy , Pettit, George David , Woodall, Jerry Mac Pherson , Kirchner, Peter Daniel , Warren, Alan Clark
IPC分类号： H01L21/20 , H01L21/203 , H01L29/72 , H01L29/80 , H01L21/00
CPC分类号： H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/2633
摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要翻译：亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后在相同的环境中再生长。侵蚀对晶体取向敏感。

6. 发明公开

EP0200059A2 A method of forming an ohmic contact to a group III-V semiconductor and a semiconductor intermediate manufacturing product 失效
标题翻译：一种形成与III-V族半导体和半导体中间体制造产品的欧姆接触的方法
公开(公告)号：EP0200059A2
公开(公告)日：1986-12-10
申请号：EP86105004.5
申请日：1986-04-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rutz, Richard Frederick , Woodall, Jerry Macpherson
IPC分类号： H01L21/285
摘要： An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer - (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.
摘要翻译：通过在晶体表面上设置两性掺杂剂层（3）并在该层中提供欧姆接触以形成非本征导电型III-V族半导体晶体（1）表面中的器件区，在欧姆接触的所需位置处，能够赋予两性掺杂剂前述非本征导电类型的晶体元素原子的局部量，并加热该结构以将原子从该层扩散到该层的表面中晶体形成欧姆接触。加热时GaAs上的Si层通常形成整流触点。如果Si层的区域含有As原子，则在加热时形成欧姆接触。

7. 发明公开

EP0042489A3 Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：EP0042489A3
公开(公告)日：1982-06-16
申请号：EP81103731
申请日：1981-05-15
申请人： International Business Machines Corporation
发明人： Braslau, Norman , Freehouf, John Lawrence , Pettit, George David , Rupprecht, Hans Stephan , Woodall, Jerry McPherson
IPC分类号： H01L29/201 , H01L29/40 , H01L29/06 , H01L29/36
CPC分类号： H01L29/86 , H01L29/201 , H01L29/452 , H01L29/772
摘要： A semiconductor device of the ballistic transport type comprises a body (1) of semiconductor material doped sufficiently to support conduction but insufficiently to cause substantial scattering of charge carriers due to collisions. The body has two parallel faces, the distance between which is less than the mean free path length of charge carriers in the semiconductor material but greater than would allow charge carriers to quantum mechanical tunnel through the body. An ohmic contact having a resistance less than 10- 6 ohm cm is formed on each of the two parallel faces of the semiconductor body. At least one ohmic contact (3A, 3B) comprises an atomically compatible intermediate region (3A), the composition of which is graded so that the energy band gap progressively decreases from the interface between the intermediate region and the body to less than 0.5 electron volts at the interface between the intermediate region (3A) and an external contact (3B). The ballistic transport device is connected in a circuit so that a voltage is impressed across the pair of ohmic contacts which is sufficient to cause conduction through the semiconductor body but insufficient to produce intervalley carrier transition. A triode device is provided by forming, within the semiconductor body, a control grid of impurity inclusions of opposite conductivity type to the impurity doping of the body. The triode device can have a body of n type conductivity gallium arsenide containing a zinc doped p type conductivity gallium arsenide current modulating inclusion and having, as at least one ohmic external contact, a graded indium gallium arsenide region.

8. 发明公开

EP0042489A2 Semiconductor devices and use of said devices 失效
标题翻译：半导体元件和这些组件的应用。
公开(公告)号：EP0042489A2
公开(公告)日：1981-12-30
申请号：EP81103731.6
申请日：1981-05-15
申请人： International Business Machines Corporation
发明人： Braslau, Norman , Freehouf, John Lawrence , Pettit, George David , Rupprecht, Hans Stephan , Woodall, Jerry McPherson
IPC分类号： H01L29/201 , H01L29/40 , H01L29/06 , H01L29/36
CPC分类号： H01L29/86 , H01L29/201 , H01L29/452 , H01L29/772
摘要： A semiconductor device of the ballistic transport type comprises a body (1) of semiconductor material doped sufficiently to support conduction but insufficiently to cause substantial scattering of charge carriers due to collisions. The body has two parallel faces, the distance between which is less than the mean free path length of charge carriers in the semiconductor material but greater than would allow charge carriers to quantum mechanical tunnel through the body. An ohmic contact having a resistance less than 10- 6 ohm cm is formed on each of the two parallel faces of the semiconductor body. At least one ohmic contact (3A, 3B) comprises an atomically compatible intermediate region (3A), the composition of which is graded so that the energy band gap progressively decreases from the interface between the intermediate region and the body to less than 0.5 electron volts at the interface between the intermediate region (3A) and an external contact (3B). The ballistic transport device is connected in a circuit so that a voltage is impressed across the pair of ohmic contacts which is sufficient to cause conduction through the semiconductor body but insufficient to produce intervalley carrier transition. A triode device is provided by forming, within the semiconductor body, a control grid of impurity inclusions of opposite conductivity type to the impurity doping of the body. The triode device can have a body of n type conductivity gallium arsenide containing a zinc doped p type conductivity gallium arsenide current modulating inclusion and having, as at least one ohmic external contact, a graded indium gallium arsenide region.

9. 发明公开

EP0200059A3 A method of forming an ohmic contact to a group III-V semiconductor and a semiconductor intermediate manufacturing product 失效
标题翻译：形成与III-V族半导体和半导体中间体制造产品的OHMIC接触的方法
公开(公告)号：EP0200059A3
公开(公告)日：1989-02-22
申请号：EP86105004.5
申请日：1986-04-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rutz, Richard Frederick , Woodall, Jerry Macpherson
IPC分类号： H01L21/285
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer - (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.

10. 发明公开

EP0164720A3 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact 失效
标题翻译：用于互联化合物半导体的OHMIC接触和提供这种接触的方法
公开(公告)号：EP0164720A3
公开(公告)日：1987-08-26
申请号：EP85107128
申请日：1985-06-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Woodall, Jerry MacPherson
IPC分类号： H01L29/40 , H01L21/285
CPC分类号： H01L29/452 , H01L21/28575 , Y10S148/084 , Y10S148/14 , Y10S438/915
摘要： A metallic ohmic contact (1) is formed on the surface of an intermetallic compound semiconductor body (2) in which the net donor density of an amphoteric dopant is greater in a thin surface region extending into the body from the interface (3) between the contact (1) and the body (2) than in the bulk of the body (2). Preferably, the surface region has a net donor density greater than 5 x 10 19 atoms per cc and is 2 to 5 nm thick. The contact can be formed by growing a body of gallium arsenide in the presence of an arsenic overpressure and a source of germanium or silicon and then depositing a metal on the surface of the body.

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