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1. 发明授权

EP0331462B1 Liquid crystal cell window 失效
标题翻译：窗口为液晶单元。
公开(公告)号：EP0331462B1
公开(公告)日：1993-12-15
申请号：EP89302040.4
申请日：1989-03-01
申请人： RAYTHEON COMPANY
发明人： Resler, Daniel P.
IPC分类号： G02F1/133 , H01L21/265
CPC分类号： H01Q3/2676 , G02F1/1333 , G02F1/13439 , Y10S148/084 , Y10T428/12549 , Y10T428/12681

2. 发明授权

EP0164517B1 Heterojunction transistors 失效
标题翻译：异相晶体管
公开(公告)号：EP0164517B1
公开(公告)日：1989-11-29
申请号：EP85104227.5
申请日：1985-04-11
申请人： International Business Machines Corporation
发明人： Tiwari, Sandip
IPC分类号： H01L29/60 , H01L29/72
CPC分类号： H01L29/475 , H01L29/42304 , H01L29/452 , H01L29/7327 , H01L29/7371 , Y10S148/01 , Y10S148/084 , Y10S148/14

3. 发明公开

EP0331462A1 Liquid crystal cell window 失效
标题翻译： FensterfüreineFlüssigkristallzelle。
公开(公告)号：EP0331462A1
公开(公告)日：1989-09-06
申请号：EP89302040.4
申请日：1989-03-01
申请人： RAYTHEON COMPANY
发明人： Resler, Daniel P.
IPC分类号： G02F1/133 , H01L21/265
CPC分类号： H01Q3/2676 , G02F1/1333 , G02F1/13439 , Y10S148/084 , Y10T428/12549 , Y10T428/12681
摘要： A liquid crystal cell (40) has two infra-red transparent windows (42) and liquid crystal molecules (50) in the space between. At least one of the windows (42) is a sheet of infra-red transparent, semi-insulating crystalline material, such as gallium arsenide, having an ion implanted surface region (44). The sheet (42) is annealed after ion implantation to electrically actuate the implanted ions. The sheet (42) has uniform infra-red transmission characteristics over its surface and is provided with anti-reflection layers (46 and 47). An electric potential (V) can be applied from a source (56) to the two windows (42) to establish an electric field (E) in the cell and thereby electrically orient the liquid crystal molecules (50).
摘要翻译：液晶单元（40）在其间的空间中具有两个红外透明窗（42）和液晶分子（50）。至少一个窗口（42）是具有离子注入表面区域（44）的一片红外透明半绝缘晶体材料，例如砷化镓。在离子注入之后，片材（42）被退火以电激活注入的离子。片材（42）在其表面上具有均匀的红外透射特性，并且设置有抗反射层（46和47）。电源（V）可以从源极（56）施加到两个窗口（42），以在电池中建立电场（E），从而使液晶分子（50）电定向。

4. 发明授权

EP0139435B1 Improving compound semiconductor crystal by heat treatment and crystals improved thereby 失效
标题翻译：通过热处理和晶体改善化合物半导体晶体
公开(公告)号：EP0139435B1
公开(公告)日：1989-07-12
申请号：EP84306036.9
申请日：1984-09-04
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION , SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人： Miyazawa, Shintaro , Murai, Shigeo c/o OSAKA WORKS OF SUMITOMO
IPC分类号： H01L21/324
CPC分类号： H01L21/26546 , H01L21/265 , H01L21/3245 , Y10S148/084
摘要： The quality of a compound semiconductor crystal such as gallium arsenide used for an integrated circuit is upgraded by a method comprising optionally forming a protective film on the obverse surface and reverse surface of a substrate consisting of a compound semiconductor crystal, subjecting the substrate to a heat treatment in an inert atmosphere at a temperature of at least the same as the activating temperature after the ion implantation into the substrate and then optionally revmoving the protective film.

5. 发明授权

EP0164720B1 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact 失效
标题翻译：用于互联化合物半导体的OHMIC接触和提供这种接触的方法
公开(公告)号：EP0164720B1
公开(公告)日：1989-01-11
申请号：EP85107128.2
申请日：1985-06-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Woodall, Jerry MacPherson
IPC分类号： H01L29/40 , H01L21/285
CPC分类号： H01L29/452 , H01L21/28575 , Y10S148/084 , Y10S148/14 , Y10S438/915

6. 发明授权

EP0162860B1 FABRICATION OF InP CONTAINING SEMICONDUCTOR DEVICES HAVING HIGH AND LOW RESISTIVITY REGIONS 失效
标题翻译：具有高电阻和低电阻率区域的包含半导体器件的制造
公开(公告)号：EP0162860B1
公开(公告)日：1988-01-27
申请号：EP84903874.0
申请日：1984-10-18
申请人： AT&T Corp.
发明人： CAPASSO, Federico , FOCHT, Marlin, Wilbert , MACRANDER, Albert, Tiemen , SCHWARTZ, Bertram
IPC分类号： H01L21/265 , H01L21/76 , H01L21/74
CPC分类号： H01L21/3245 , H01L21/2654 , H01L21/266 , H01L21/743 , H01L21/7605 , H01L21/8252 , Y10S148/084
摘要： The property of materials in the InP system, whereby helium ion or deuteron bombarded p-type material becomes highly resistive but n-type material remains relatively conductive, is utlized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars (14) between devices (D1-D2).

7. 发明公开

EP0139435A3 Improving compound semiconductor crystal by heat treatment and crystals improved thereby 失效
标题翻译：通过热处理和晶体改善化合物半导体晶体
公开(公告)号：EP0139435A3
公开(公告)日：1985-12-27
申请号：EP84306036
申请日：1984-09-04
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION , SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人： Miyazawa, Shintaro , Murai, Shigeo c/o OSAKA WORKS OF SUMITOMO
IPC分类号： H01L21/324
CPC分类号： H01L21/26546 , H01L21/265 , H01L21/3245 , Y10S148/084
摘要： The quality of a compound semiconductor crystal such as gallium arsenide used for an integrated circuit is upgraded by a method comprising optionally forming a protective film on the obverse surface and reverse surface of a substrate consisting of a compound semiconductor crystal, subjecting the substrate to a heat treatment in an inert atmosphere at a temperature of at least same as the activating temperature after ion implantation into the substrate and then optionally removing the protective film.

8. 发明公开

EP0164720A2 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact 失效
标题翻译：用于金属间化合物半导体和工艺这种接触的制备欧姆接触。
公开(公告)号：EP0164720A2
公开(公告)日：1985-12-18
申请号：EP85107128.2
申请日：1985-06-11
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Woodall, Jerry MacPherson
IPC分类号： H01L29/40 , H01L21/285
CPC分类号： H01L29/452 , H01L21/28575 , Y10S148/084 , Y10S148/14 , Y10S438/915
摘要： A metallic ohmic contact (1) is formed on the surface of an intermetallic compound semiconductor body (2) in which the net donor density of an amphoteric dopant is greater in a thin surface region extending into the body from the interface (3) between the contact (1) and the body (2) than in the bulk of the body (2). Preferably, the surface region has a net donor density greater than 5 x 10 19 atoms per cc and is 2 to 5 nm thick. The contact can be formed by growing a body of gallium arsenide in the presence of an arsenic overpressure and a source of germanium or silicon and then depositing a metal on the surface of the body.
摘要翻译：的金属欧姆接触（1）上形成有金属间化合物半导体主体（2），其中两性掺杂剂的净施主密度大于在薄表面区域延伸到本体从之间的界面（3）的表面上接触件（1）和所述主体（2）比在本体中主体（2）的。优选地，该表面区域具有净施主密度低于5×10 <1> <9>每立方厘米原子更大的和为2至5纳米厚。的接触可以通过在过压的砷和锗或硅源的存在下生长砷化镓的主体，然后沉积所述主体的所述表面上的金属形成。

9. 发明公开

EP0123926A2 Verfahren zur Implantation von Ionen in ein halbleitendes Substrat 失效
标题翻译：维尔法罕zur植入von Ionen在ein halbleitendes Substrat。
公开(公告)号：EP0123926A2
公开(公告)日：1984-11-07
申请号：EP84103546.2
申请日：1984-03-30
申请人： ITT INDUSTRIES INC.
发明人： Badawi, Mohammed Hani
IPC分类号： H01L21/265
CPC分类号： H01L21/26553 , H01L21/266 , H01L29/812 , Y10S148/084 , Y10S438/945
摘要： Es wird ein Verfahren zur selektiven Implantation von lonen in ein mittels einer Implantationsmaske (6) aus Photolack maskiertes Substrat (1), insbesondere aus halbisolierendem Galliumarsenid beschrieben, dessen Oberfläche eine metallische Oberflächenschicht (2), insbesondere aus Titan, unter der Implantationsmaske (6) schützt. Nach der Implantation wird die Implantationsmaske (6) und die Oberflächenschicht (2) entfernt und das Substrat (1) getempert. Die Oberflächenschicht (2) wirkt als Pufferschicht und verhindert die Verunreinigung der Substratoberfläche mit Photolackresten während des Tempern, wobei die Photolackreste die elektrischen Eigenschaften der Substratoberfläche beeinträchtigen könnten.
摘要翻译：通过光刻胶注入掩模和设置在衬底表面和光致抗蚀剂掩模之间的例如钛的金属层，将离子选择性地植入到诸如半绝缘砷化镓的半导体衬底的层中。植入后，去除掩模和金属层，并将基底热处理退火。金属层用作缓冲层，并且可以在退火阶段防止光致抗蚀剂残留物对衬底表面的可能的污染。这种污染会不利地影响基板表面，特别是砷化镓基板的电性能。

10. 发明公开

EP0030370A3 Ion implanted reverse-conducting thyristor 失效
标题翻译：离子注入反向导管
公开(公告)号：EP0030370A3
公开(公告)日：1981-09-16
申请号：EP80107602
申请日：1980-12-04
申请人： WESTINGHOUSE ELECTRIC CORPORATION
发明人： Bartko, John , Schlegel, Earl Stauffer
IPC分类号： H01L21/265 , H01L29/74 , H01L29/36
CPC分类号： H01L21/26513 , H01L29/0834 , H01L29/102 , Y10S148/084
摘要： A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p + -type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.

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