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    • 1. 发明公开
    • Compliant thermally conductive compound
    • WeichewärmeleistungsfähigeZuammensetzung。
    • EP0342141A2
    • 1989-11-15
    • EP89480042.4
    • 1989-03-14
    • International Business Machines Corporation
    • Anderson, Herbert Rudolph, Jr.Booth, Richard BentonDavid, Lawrence DanielNeisser, Mark OliverSachdev, Harbans SinghTakacs, Mark Anthony
    • C09K5/00
    • C09K5/08F28F13/00F28F2013/006H01L2224/16225H01L2224/73253
    • A compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semi-conductor chips. The compound has chemically stable thermal conduction and viscosity proper­ties, is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduc­tion. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler parti­cles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyiso­butylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.
    • 兼容导热的,优选介电的化合物,其增强诸如双极VLSI半导体芯片的大功率电气部件的功率耗散能力。 该化合物具有化学稳定的热传导和粘度特性,在使用过程中不会进行相分离,并可以以小间隙施加,以使热传导最大化。 该化合物优选包括其中分散有热填料颗粒的液体载体和具有与热填料颗粒的煅烧表面反应的官能团的偶联剂,以及在自缩合下优先润湿热填料颗粒的官能团。 另外的添加剂如热解法二氧化硅和聚异丁烯增强了在功能使用期间遇到的导热化合物的热机械剪切力降解的相位稳定性和抗性,例如波动的功率循环。
    • 6. 发明公开
    • Lift-off process
    • Abhebe-Verfahren。
    • EP0164675A2
    • 1985-12-18
    • EP85106842.9
    • 1985-06-03
    • International Business Machines Corporation
    • Anderson, Herbert Rudolph, Jr.Sachdev, Harbans SinghSachdev, Krishna Gandhi
    • G03F7/10
    • H01L21/7688G03F7/039H01L21/0272H05K3/048Y10S438/951
    • An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.
    • 通过使用由在热或辐射的影响下经历清洁解聚的聚合物形成的剥离层,并且允许快速和无残留地释放“消耗性掩模”,在多层金属结构制造集成电路中改进了多层金属结构的剥离工艺, 。 通过将本发明的剥离层施加在固化的聚合物膜上或预先沉积在有机或无机基底上的氧RIE阻挡层上,然后再涂覆有辐射敏感的另一个屏障,形成嵌入式互连冶金系统 抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后,通过在含氟环境中的溅射蚀刻将图像复制到势垒中,随后通过氧反应离子蚀刻进入基底层,然后通过橡皮布金属蒸发 最后通过在剥离层的解聚温度下进行短暂热处理,并进行短暂的溶剂浸泡。
    • 10. 发明公开
    • Lift-off process
    • 提升过程
    • EP0164675A3
    • 1987-06-16
    • EP85106842
    • 1985-06-03
    • International Business Machines Corporation
    • Anderson, Herbert Rudolph, Jr.Sachdev, Harbans SinghSachdev, Krishna Gandhi
    • G03F07/10
    • H01L21/7688G03F7/039H01L21/0272H05K3/048Y10S438/951
    • An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.
    • 通过使用由在热或辐射的影响下经历清洁解聚的聚合物形成的剥离层,并且允许快速和无残留地释放“消耗性掩模”,在多层金属结构制造集成电路中改进了多层金属结构的剥离工艺, 。 通过将本发明的剥离层施加在固化的聚合物膜上或预先沉积在有机或无机基底上的氧RIE阻挡层上,随后再涂覆有辐射敏感的另一个屏障,形成嵌入式互连冶金系统 抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后,通过在含氟环境中的溅射蚀刻将图像复制到势垒中,随后通过氧反应离子蚀刻进入基底层,然后通过橡皮布金属蒸发 最后通过在剥离层的解聚温度下进行短暂热处理,并进行短暂的溶剂浸泡。