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    • 1. 发明公开
    • THERMALLY CONDUCTIVE SILICONE COMPOSITION AND CURED PRODUCT OF SAME
    • HEAT导电硅组合物及其硬化产物THEREOF
    • EP2995651A4
    • 2016-12-21
    • EP14795334
    • 2014-04-17
    • SHIN-ETSU CHEMICAL CO LTD
    • MATSUMOTO NOBUAKI
    • C08L83/07C08K3/36C08L83/05
    • C09J183/06C08G77/12C08G77/20C08K3/013C08K3/36C08K5/56C08K7/18C08K2003/2227C08K2003/2296C08L83/00C08L83/04C08L2205/025C08L2205/035C09J9/00C09J11/04C09K5/08H01L23/296H01L2924/0002C08K3/0033H01L2924/00
    • A thermally conductive silicone composition is provided, a cured material from which does not impose stress to IC packages, even left at a high temperature. The silicone composition has a viscosity at 25 degrees C of 10 to 1,000 Pa·s, and comprises (A) 100 parts by mass of an organopolysiloxane having at least two alkenyl groups per molecule and a dynamic viscosity at 25 degrees C of 10 to 100,000 mm 2 /s, (B) an organohydrogenpolysiloxane represented by the following formula (1) : wherein n and m are positive integers which meet the equations: 10 ‰¦ n + m ‰¦ 100 and 0.01 ‰¦ n / m + n ‰¦ 0.3 , R 1 is, independently of each other, an alkyl group having 1 to 6 carbon atoms, (C) an organohydrogenpolysiloxane represented by the following formula (2): wherein p is a positive integer of from 5 to 1,000, and R 2 is, independently of each other, an alkyl group having 1 to 6 carbon atoms, (D) an organohydrogenpolysiloxane represented by the following formula (3): wherein k is a positive integer of from 2 to 10; R is, independently of each other, a hydrogen atom or R 4 , provided that two of R are a hydrogen atom, wherein R 4 is a group bonded to a silicon atom via a carbon atom or via a carbon atom and an oxygen atom and has a group selected from an epoxy group, an acryloyl group, a methacryloyl group, an ether group and a trialkoxysilyl group. R 3 is, independently of each other, an alkyl group having 1 to 6 carbon atoms, (E) 400 to 3, 000 parts by mass of a thermally conductive filler, (F) a catalytic amount of a platinum group metal catalyst, and (G) 0.01 to 1 part by mass of a reaction retardant, wherein amounts of components (B), (C) and (D) meet the following conditions: a ratio, [the total number of Si-H groups in components (B), (C) and (D)]/[the number of alkenyl groups in component (A)], is in a range of 0.6 to 1.5; a ratio, [the total number of Si-H groups in components (C) and (D)]/[the number of Si-H groups in component (B)], is in a range of 1 to 10; and a ratio, [the number of Si-H groups in component (C)]/[the number of Si-H groups in component (D)], is in a range of 1 to 10. The present invention also provides a semi-conductor device provided with a cured material obtained by curing the aforesaid composition.
    • 3. 发明公开
    • THERMALLY CONDUCTIVE SILICONE COMPOSITION AND CURED PRODUCT OF SAME
    • 热传导有机硅组合物及其固化产物
    • EP2995651A1
    • 2016-03-16
    • EP14795334.3
    • 2014-04-17
    • Shin-Etsu Chemical Co., Ltd.
    • MATSUMOTO, Nobuaki
    • C08L83/07C08K3/36C08L83/05
    • C09J183/06C08G77/12C08G77/20C08K3/013C08K3/36C08K5/56C08K7/18C08K2003/2227C08K2003/2296C08L83/00C08L83/04C08L2205/025C08L2205/035C09J9/00C09J11/04C09K5/08H01L23/296H01L2924/0002C08K3/0033H01L2924/00
    • A thermally conductive silicone composition is provided, a cured material from which does not impose stress to IC packages, even left at a high temperature.
      The silicone composition has a viscosity at 25 degrees C of 10 to 1,000 Pa·s, and comprises
      (A) 100 parts by mass of an organopolysiloxane having at least two alkenyl groups per molecule and a dynamic viscosity at 25 degrees C of 10 to 100,000 mm 2 /s,
      (B) an organohydrogenpolysiloxane represented by the following formula (1) :
      wherein n and m are positive integers which meet the equations: 10 ≦ n + m ≦ 100 and 0.01 ≦ n / m + n ≦ 0.3 ,
      R 1 is, independently of each other, an alkyl group having 1 to 6 carbon atoms,

      (C) an organohydrogenpolysiloxane represented by the following formula (2):
      wherein p is a positive integer of from 5 to 1,000, and R 2 is, independently of each other, an alkyl group having 1 to 6 carbon atoms,

      (D) an organohydrogenpolysiloxane represented by the following formula (3):
      wherein k is a positive integer of from 2 to 10; R is, independently of each other, a hydrogen atom or R 4 , provided that two of R are a hydrogen atom, wherein R 4 is a group bonded to a silicon atom via a carbon atom or via a carbon atom and an oxygen atom and has a group selected from an epoxy group, an acryloyl group, a methacryloyl group, an ether group and a trialkoxysilyl group. R 3 is, independently of each other, an alkyl group having 1 to 6 carbon atoms,

      (E) 400 to 3, 000 parts by mass of a thermally conductive filler,
      (F) a catalytic amount of a platinum group metal catalyst, and
      (G) 0.01 to 1 part by mass of a reaction retardant,
      wherein amounts of components (B), (C) and (D) meet the following conditions:
      a ratio, [the total number of Si-H groups in components (B), (C) and (D)]/[the number of alkenyl groups in component (A)], is in a range of 0.6 to 1.5;
      a ratio, [the total number of Si-H groups in components (C) and (D)]/[the number of Si-H groups in component (B)], is in a range of 1 to 10; and
      a ratio, [the number of Si-H groups in component (C)]/[the number of Si-H groups in component (D)], is in a range of 1 to 10.
      The present invention also provides a semi-conductor device provided with a cured material obtained by curing the aforesaid composition.
    • 提供一种导热有机硅组合物,其固化材料即使在高温下也不会对IC封装施加应力。 所述有机硅组合物在25℃下的粘度为10〜1,000Pa·s,并且包含(A)100质量份每分子具有至少两个烯基的有机聚硅氧烷,并且25℃下的动态粘度为10至100,000 (B)由下式(1)表示的有机氢聚硅氧烷:其中n和m是满足以下等式的正整数:10≤n+m≤100和0.01≤n/ m +n≤0.3,R1是 (C)由下式(2)表示的有机氢聚硅氧烷:其中p是5-1,000的正整数,并且R 2彼此独立地为碳原子数为1至6的烷基 (D)由下式(3)表示的有机基氢聚硅氧烷:其中k是2至10的正整数; R彼此独立地为氢原子或R4,条件是两个R为氢原子,其中R4为通过碳原子或通过碳原子和氧原子与硅原子键合的基团,并且具有 选自环氧基,丙烯酰基,甲基丙烯酰基,醚基和三烷氧基甲硅烷基的基团。 R3相互独立地为碳原子数1〜6的烷基,(E)400〜3000质量份的导热性填料,(F)催化量的铂族金属催化剂和( (B),(C)和(D)的量满足以下条件:[组分(B)中的Si-H基团的总数量)为0.01-1质量份的反应延迟剂, ,(C)和(D)] / [组分(A)中链烯基的数量)为0.6-1.5; 组分(C)和(D)中的Si-H基团的总数量/组分(B)中的Si-H基团的数量)的比例在1至10的范围内; 和[组分(C)中的Si-H基团的数量] / [组分(D)中的Si-H基团的数量)的比率在1至10的范围内。本发明还提供了半 导体装置,其具有通过固化上述组合物而获得的固化材料。