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1. 发明公开

EP0920054A1 SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERSPEICHERS
公开(公告)号：EP0920054A1
公开(公告)日：1999-06-02
申请号：EP97929524.3
申请日：1997-07-04
申请人： Hitachi, Ltd.
发明人： MIKI, Hiroshi , KUSHIDA, Keiko , FUJISAKI, Yoshihisa
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/56 , H01L21/02197 , H01L21/02323 , H01L21/0234 , H01L28/75
摘要： A semiconductor memory which is improved in reliability by preventing the lowering of capacitance and defective insulation, especially, electrode delamination caused by the formation of the passivation film (insulating film) of a capacitor using a high- dielectric- constant or ferroelectric material by plasma processing at a relatively low temperature and a method for manufacturing the memory. The semiconductor memory has an integrated capacitor composed of a capacitor structure constituted of an upper electrode, a lower electrode, and a capacitor insulating film (of a high- dielectric- constant or ferroelectric thin film) which is held between electrodes and serves as a capacitor insulating film and a protective insulating film which covers the capacitor structure and is formed by plasma treatment. An oxygen introducing layer is further formed on the surface of the thin film constituting the capacitor insulating film. In the manufacturing process of the memory, for example, the oxygen introducing layer is formed on the surface of the high- dielectric- constant or ferroelectric material by introducing oxygen to the boundary between the electrode and the material by conducting heat treatment in an oxygen atmosphere before the protective insulating film (SiO 2 passivation film) is formed by plasma treatment after the formation of the electrode. Therefore, lowering of capacitance, defective insulation, and especially, electrode delamination, which are caused by the formation of the passivation film (insulating film), can be prevented. In addition, the occurrence of defective insulation can be reduced by suppressing the lowering of the capacitance when an alternating electric field is impressed. When a ferroelectric material is used as the dielectric film, moreover, such an effect as an increase in residual polarization, a decrease in coercive voltage, etc., can be obtained.
摘要翻译：一种半导体存储器，其通过防止电容降低和绝缘不良，特别是通过使用高介电常数或铁电材料的等离子体处理形成电容器的钝化膜（绝缘膜）引起的电极分层而提高了可靠性在相对低的温度下和用于制造存储器的方法。半导体存储器具有由电容器结构构成的集成电容器，该电容器结构由上电极，下电极和电容器绝缘膜（高介电常数或铁电薄膜）构成，电容器绝缘膜保持在电极之间并用作电容器绝缘膜和覆盖电容器结构并通过等离子体处理形成的保护绝缘膜。在构成电容器绝缘膜的薄膜的表面上还形成氧气引入层。在记忆体的制造过程中，例如，通过在氧气氛中进行热处理，将氧引入电极与材料之间的边界，在高介电常数或铁电体材料的表面上形成氧气导入层之前，在形成电极之后通过等离子体处理形成保护绝缘膜（SiO 2钝化膜）。因此，可以防止由形成钝化膜（绝缘膜）引起的电容降低，绝缘性差，特别是电极分层。此外，当施加交变电场时，通过抑制电容的降低可以减少缺陷绝缘的发生。此外，当使用铁电材料作为电介质膜时，可以获得如残余极化增加，矫顽电压降低等的效果。

2. 发明公开

EP3024017A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP3024017A1
公开(公告)日：2016-05-25
申请号：EP13889614.7
申请日：2013-07-16
申请人： Hitachi, Ltd.
发明人： MORI, Yuki , MINE, Toshiyuki , MIKI, Hiroshi , MATSUMURA, Mieko , HAMAMURA, Hirotaka
IPC分类号： H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4933 , H01L29/66068
摘要： Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor material having a larger band gap than silicon is used, and which is typified by, for example, an SiC power MOSFET. In order to achieve this object, in the in the SiC power MOSFET, the gate electrode GE is formed in contact with the gate insulating film GOX, and is formed of the polycrystalline silicon film PF1 having the thickness equal to or smaller than 200 nm, and the polycrystalline silicon film PF2 formed in contact with the polycrystalline silicon film PF1, and having any thickness.
摘要翻译：本发明提供一种确保使用带隙大于硅的半导体材料的半导体装置中的栅极绝缘膜的可靠性与Si功率MOSFET相同的技术，例如，一个SiC功率MOSFET。为了实现该目的，在SiC功率MOSFET中，栅极电极GE形成为与栅极绝缘膜GOX接触，并且由具有等于或小于200nm的厚度的多晶硅膜PF1形成，以及与多晶硅膜PF1接触而形成的多晶硅膜PF2。

3. 发明授权

EP0920054B1 METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY 失效
标题翻译：一种用于生产半导体存储器
公开(公告)号：EP0920054B1
公开(公告)日：2006-11-02
申请号：EP97929524.3
申请日：1997-07-04
申请人： Hitachi, Ltd.
发明人： MIKI, Hiroshi , KUSHIDA, Keiko , FUJISAKI, Yoshihisa
IPC分类号： H01L21/8242 , H01L27/108 , H01L21/02
CPC分类号： H01L28/56 , H01L21/02197 , H01L21/02323 , H01L21/0234 , H01L28/75
摘要： A semiconductor memory which is improved in reliability by preventing the lowering of capacitance and defective insulation, especially, electrode separation caused by the formation of the passivation film (insulating film) of a capacitor using a high ferroelectric material by plasma processing at a relatively low temperature and a method for manufacturing the memory. The semiconductor memory has an integrated capacitor composed of a capacitor structure constituted of an upper electrode (105), a lower electrode (102), and a high ferroelectric oxide thin film (103) which is held between electrodes (105 and 102) and serves as a capacitor insulating film and an insulating protective film (106) which covers the capacitor structure and is formed by plasma processing. An oxygen introducing layer (104) is further formed on the surface of the thin film (103) constituting the capacitor insulating film. In the manufacturing process of the memory, for example, the oxygen introducing layer (104) is formed on the surface of the high ferroelectric material (103) by introducing oxygen to the boundary between the electrode (105) and the material (103) by conducting heat treatment in an oxygen atmosphere before the protective insulating film (SiO2 passivation film) (106) is formed by plasma processing after the formation of the electrode (105). Therefore, lowering of capacitance, defective insulation, and especially, electrode separation, which are caused by the formation of the passivation film (insulating film), can be prevented. In addition, the occurrence of defective insulation can be reduced by suppressing the lowering of the capacitance when an alternating electric field is impressed. When a ferroelectric material is used as the dielectric film, moreover, such an effect as an increase in residual polarization, a decrease in coercive voltage, etc., can be obtained.

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