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1. 发明授权

EP0175437B1 Production of GaAs enhancement and depletion mode HEMT's 失效
标题翻译：生产GAAS增强和减肥模式HEMT'S
公开(公告)号：EP0175437B1
公开(公告)日：1988-11-30
申请号：EP85303057.5
申请日：1985-04-30
申请人： FUJITSU LIMITED
发明人： Suzuki, Masahisa , Mimura, Takashi
IPC分类号： H01L21/82 , H01L27/08 , H01L29/80 , H01L21/306
CPC分类号： H01L21/30621 , H01L21/8252 , H01L27/0605 , H01L29/7787 , Y10S438/97

2. 发明公开

EP0165798A1 Semiconductor device comprising N-channel and P-channel transistors and production method 失效
标题翻译：一种半导体器件，包括N-沟道和P沟道晶体管和它们的制备方法。
公开(公告)号：EP0165798A1
公开(公告)日：1985-12-27
申请号：EP85304320.6
申请日：1985-06-17
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi
IPC分类号： H01L27/08 , H01L29/36 , H01L29/80
CPC分类号： H01L29/7786 , H01L27/0605 , H01L29/432
摘要： A semiconductor device complementary circuit comprises an n-channel transistor (ON) using a two-dimensional electron gas (27) and a p-channel transistor (Qp) using a two-dimensional hole gas (28). The device comprises: a semi-insulating GaAs substrate (11); a channel layer (12) of i-type GaAs having n - -type source and drain regions (18 and 19) and p + -type source and drain regions (20 and 21); a buffer layer (13) of i-type AlGaAs preventing carriers from passing through it; and, first and second control layers (14 and 15) of GaAs and/or AlGaAs having n-type or p-type conductivity. These layers are epitaxially formed in sequence on the substrate (11) by an MBE method or an MOCVD method. Metal electrodes (16, 17, 23 to 26) are formed on the first and second control layers (14 and 15), n + -type regions (18 and 19) and p"-type regions (20 and 21).

3. 发明授权

EP0064829B1 High electron mobility semiconductor device and process for producing the same 失效
标题翻译：高电子移动半导体器件及其制造方法
公开(公告)号：EP0064829B1
公开(公告)日：1989-11-02
申请号：EP82302106.8
申请日：1982-04-23
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi , Hiyamizu, Satoshi
IPC分类号： H01L29/80 , H01L29/36 , H01L21/20
CPC分类号： H01L29/0653 , H01L29/7781 , H01L29/7787 , H01L29/80

4. 发明公开

EP0033037A3 Heterojunction semiconductor devices 失效
标题翻译：异相半导体器件
公开(公告)号：EP0033037A3
公开(公告)日：1983-11-30
申请号：EP80304697
申请日：1980-12-23
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi
IPC分类号： H01L29/205 , H01L29/207 , H01L29/10
CPC分类号： H01L29/7787 , H01L29/765 , H01L29/7781
摘要： A thin electron accumulation layer is generated along a heterojunction between two different semiconductor layers (21,22) each of which has a different electron affinity from the other. This electron accumulation suffers a less ionized-impurity scattering, because its thickness does not exceed the spread of an electron wave. A channel constituted by this electron accumulation enjoys an excellent magnitude of electron mobility particularly at cryogenic temperature. A layer configuration fabricated with two different semiconductors (21, 22) having different electron affinity from, and similar crystal lattice coefficient with, each other and interleaving a single heterojunction therein is effective to improve the electron mobility. Such a layer configuration can be employed for production of an active semiconductor device with high electron mobility, resulting in a high switching speed. Such semi- conductor devices, including an FET, CCD et al, exhibit an excellent transfer conductance Gm, and may be constructed in a number of ways.

5. 发明公开

EP0064829A2 High electron mobility semiconductor device and process for producing the same 失效
标题翻译： Halbleiteranordnung mit hoher Elektronenbeweglichkeit und Verfahren zu deren Herstellung。
公开(公告)号：EP0064829A2
公开(公告)日：1982-11-17
申请号：EP82302106.8
申请日：1982-04-23
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi , Hiyamizu, Satoshi
IPC分类号： H01L29/80 , H01L29/36 , H01L21/20
CPC分类号： H01L29/0653 , H01L29/7781 , H01L29/7787 , H01L29/80
摘要： A high-electron mobility transistor (HEMT) has an undoped GaAs layer (2); and an N-doped AlGaAs layer (3); a heterojunction (12) formed between the undoped GaAs layer and N-doped AlGaAs layer (2) and (3), respectively; a gate electrode (10) on the N-doped AlGaAs layer (3); and an electron-storing layer formed in proximity to the heterojunction (12) due to the difference in electron affinity between the undoped GaAs layer (2) and the N-doped AlGaAs layer (3). The known HEMT has a disadvantage in that during the formation of the source and drain regions by means of, for example thermal diffusion, the impurities of the N-doped AlGaAs layer (3) may diffuse into the undoped GaAs layer (2) through the heterojunction (12) so that the mobility of the electrons in the electron-storing layer (17) is lessened. This disadvantage is removed in the present invention by the provision of a conduction layer (7) formed by the epitaxial growth of highly-doped GaAs. The known HEMT also has a disadvantage in that the source electrode (9A) or the drain electrode (9B) is electrically connected to the N-doped AlGaAs layer (3) so that the electrons in this layer (3) may lessen said mobility. This disadvantage is also eliminated in the present invention by the provision of an insulating layer (6).
摘要翻译：高电子迁移率晶体管（HEMT）具有未掺杂的GaAs层（2）; 和N掺杂的AlGaAs层（3）; 形成在未掺杂的GaAs层和N掺杂的AlGaAs层（2）和（3）之间的异质结（12）在N掺杂AlGaAs层（3）上的栅电极（10）; 以及由于未掺杂的GaAs层（2）和N掺杂的AlGaAs层（3）之间的电子亲和力的差异而在异质结（12）附近形成的电子存储层。已知的HEMT的缺点在于，在通过例如热扩散形成源极和漏极区域期间，N掺杂的AlGaAs层（3）的杂质可以通过以下方式扩散到未掺杂的GaAs层（2）中：异质结（12），使得电子存储层（17）中的电子的迁移率减小。在本发明中通过提供通过高掺杂GaAs的外延生长形成的导电层（7）来消除这个缺点。已知的HEMT还具有以下缺点：源电极（9A）或漏电极（9B）与N掺杂的AlGaAs层（3）电连接，使得该层（3）中的电子可以减小所述迁移率。通过设置绝缘层（6），本发明也消除了这个缺陷。

6. 发明公开

EP0283278A3 Compound semiconductor device having nonalloyed ohmic contacts 失效
标题翻译：具有非合金OHMIC联系的化合物半导体器件
公开(公告)号：EP0283278A3
公开(公告)日：1989-09-06
申请号：EP88302314.5
申请日：1988-03-17
申请人： FUJITSU LIMITED
发明人： Kuroda, Shigeru , Mimura, Takashi , Notomi, Seishi
IPC分类号： H01L29/54
CPC分类号： H01L29/452 , H01L29/7787
摘要： An ohmic contact layer (15) is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure (14, 13, 12) and source/drain electrodes (19S, 19D) in a high electron mobility transistor. The ohmic contact layer (15) is made of In x Ga 1-x As or Ge. The ohmic contact layer (15) has a function of considerably reducing a specific contact resistance of a barrier (40) formed at an interface between the ohmic contact layer and the source and drain electrodes. Thereby, a nonalloyed ohmic contact is formed between the source and drain electrodes and source and drain regions formed in the undoped GaAs layer.

7. 发明授权

EP0064370B1 High electron mobility semiconductor device 失效
标题翻译：高电子移动半导体器件
公开(公告)号：EP0064370B1
公开(公告)日：1989-06-28
申请号：EP82302107.6
申请日：1982-04-23
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi
IPC分类号： H01L29/36 , H01L29/80
CPC分类号： H01L21/30621 , H01L27/0883 , H01L27/095 , H01L29/7787

8. 发明授权

EP0165798B1 Semiconductor device comprising N-channel and P-channel transistors and production method 失效
标题翻译：包含N沟道和P沟道晶体管和生产方法的半导体器件
公开(公告)号：EP0165798B1
公开(公告)日：1988-08-17
申请号：EP85304320.6
申请日：1985-06-17
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi
IPC分类号： H01L27/08 , H01L29/36 , H01L29/80
CPC分类号： H01L29/7786 , H01L27/0605 , H01L29/432

9. 发明公开

EP0159273A2 Semiconductor device 有权
公开(公告)号：EP0159273A2
公开(公告)日：1985-10-23
申请号：EP85400744.0
申请日：1985-04-16
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi
IPC分类号： H01L29/72 , H01L29/10 , H01L29/205
CPC分类号： B82Y10/00 , H01L29/0804 , H01L29/0821 , H01L29/0895 , H01L29/7606
摘要： A semiconductor device comprising an emitter potential barrier (5), a collector potential barrier (3), a base (4) between the emitter potential barrier and the collector potential barrier, an emitter (6) being in contact, through the emitter potential barrier (5), with the base (4), and a collector (2) being in contact, through the collector potential barrier (3), with the base (4). The base has a thin base width capable of generating discrete energy levels of minority carriers therein. Carriers which are minority carriers in the base can be transferred from the emitter via the discrete energy levels in the base to the collector by resonant tunneling at an ultra high speed.

10. 发明公开

EP0113983A1 Fabricating a semiconductor device by means of molecular beam epitaxy 失效
标题翻译： Herstellung eines Halbleiterbauelements手套Molekularstrahlepitaxie。
公开(公告)号：EP0113983A1
公开(公告)日：1984-07-25
申请号：EP83307679.7
申请日：1983-12-16
申请人： FUJITSU LIMITED
发明人： Mimura, Takashi , Hikosaka, Kohki , Odani, Kouichiro , Ishikawa, Tomonori , Nishi, Hidetoshi
IPC分类号： H01L21/203 , H01J37/30 , C30B23/02
CPC分类号： C23C14/56 , C30B23/02 , H01J37/32 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/02639 , H01L21/318 , H01L21/3185 , H01L21/3245 , H01L29/812
摘要： Molecular beam epitaxy can be employed to produce a semiconductor layer on a substrate. Etching of the substrate may be necessary to prepare it for the epitaxy process, and a protective layer may advantageously be provided over the semiconductor layer after formation thereof by the epitaxy process. Such a subsidiary process of etching or protective- layer formation is desirably carried out under a vacuum. Steps are taken to ensure that the substrate is maintained under vacuum during the epitaxy process and each such subsidiary process without any break in the vacuum between those processes, thereby reducing the danger of impurities entering the said semiconductor layer. For such etching a hydrogen plasma etching process is employed, thereby avoiding damage that could otherwise be caused to the substrate and to a vacuum pump.
摘要翻译：分子束外延可用于在衬底上产生半导体层。衬底的蚀刻可能需要制备用于外延工艺，并且可以通过外延工艺在其形成后有利地在半导体层上提供保护层。蚀刻或保护层形成的这种辅助工艺理想地在真空下进行。采取步骤以确保在外延工艺和每个这样的辅助工艺期间在真空下保持基板在这些工艺之间没有任何破坏，从而降低杂质进入所述半导体层的危险。对于这样的蚀刻，采用氢等离子体蚀刻工艺，从而避免否则可能对衬底和真空泵造成损坏。

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