专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1780303A3 System and method for power function ramping of microwave linear discharge sources 审中-公开
标题翻译：装置和方法，用于起动的微波线性放电源功率
公开(公告)号：EP1780303A3
公开(公告)日：2010-07-07
申请号：EP06022261.9
申请日：2006-10-25
申请人： Applied Materials, Inc. , Applied Materials GmbH & Co. KG
发明人： Stowell, Michael W. , Liehr, Michael , Wieder, Stephan , Dieguez-Campo, José Manuel
IPC分类号： C23C16/515 , H01J37/32
CPC分类号： C23C16/515
摘要： One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.

2. 发明公开

EP1780303A2 System and method for power function ramping of microwave linear discharge sources 审中-公开
标题翻译：装置和方法，用于起动的微波线性放电源功率
公开(公告)号：EP1780303A2
公开(公告)日：2007-05-02
申请号：EP06022261.9
申请日：2006-10-25
申请人： Applied Films Corporation , Applied Materials GmbH & Co. KG
发明人： Stowell, Michael W. , Liehr, Michael , Wieder, Stephan , Dieguez-Campo, José Manuel
IPC分类号： C23C16/515 , H01J37/32
CPC分类号： C23C16/515
摘要： One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.
摘要翻译：本发明的一个方式是用于在衬底上沉积薄膜的系统。该系统包括真空室; 在真空室内部一栋线性放电管; 被配置为产生微波功率信号的磁控管也可以施加到线性放电管; 配置成提供信号到磁控管的电源; 和pulseCONTROL连接到电源。所述pulseCONTROL被配置为控制脉冲的多元化，脉冲的多个频率和/或脉冲的多个轮廓的占空比。

3. 发明公开

EP1921658A2 System and method for shielding during PECVD deposition processes 审中-公开
标题翻译：系统与Verfahren zur AbschirmungwährendPECVD-Abscheidungsprozessen
公开(公告)号：EP1921658A2
公开(公告)日：2008-05-14
申请号：EP07115859.6
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W.
IPC分类号： H01J37/32
CPC分类号： H01J37/32321 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J2237/3321
摘要： A system and method for plasma enhanced chemical vapor deposition is described. One embodiment includes a process chamber (150); a substrate support (120) positioned inside the process chamber, the substrate support configured to support a substrate (125) on which a film will be deposited; an antenna (110) located inside the process chamber; a radical shield (145) partially surrounding the antenna, the radical shield having an inner volume; a support gas inlet (155) positioned to supply support gas to the inner volume of the radical shield; a precursor gas inlet configured to supply a precursor gas to the inside of the process chamber; at least one aperture (160) in the radical shield, the aperture positioned to enable radicals to escape the inner volume of the radical shield and collide with the precursor gas.
摘要翻译：描述了等离子体增强化学气相沉积的系统和方法。一个实施例包括处理室（150）; 位于所述处理室内部的衬底支撑件（120），所述衬底支撑件构造成支撑其上将沉积膜的衬底（125）; 位于处理室内的天线（110）; 部分围绕天线的基本屏蔽（145），所述基部屏蔽具有内部容积; 支撑气体入口（155），其定位成将支撑气体供应到自由基屏蔽的内部体积; 前体气体入口，构造成将前体气体供应到处理室的内部; 基部护罩中的至少一个孔（160），该孔定位成使得自由基能够逃离基底屏蔽的内部体积并与前体气体碰撞。

4. 发明公开

EP1921657A3 System and Method for Generating Ions and Radicals 审中-公开
标题翻译：系统和方法，用于产生离子和自由基
公开(公告)号：EP1921657A3
公开(公告)日：2010-05-05
申请号：EP07115857.0
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W. , Klemm, Günter , Hacker, Volker , Lotz, Hans-Georg
IPC分类号： H01J37/32 , H05H1/46 , H01J27/16
CPC分类号： H01J37/3266 , H01J27/16 , H01J37/32009 , H01J37/3233 , H01J37/32366
摘要： A system and method for producing electrons and ions are disclosed. One embodiment includes an outer electrode (125) with a discharge chamber (135); an inner electrode (130) positioned inside the discharge chamber, the inner electrode positioning forming a upper portion of the discharge chamber and a lower portion of the discharge chamber; and a gas inlet positioned in the lower portion of the discharge chamber; wherein a plasma formed within the lower portion of the discharge chamber provides priming particles usable to form a plasma in the upper portion of the discharge chamber.

5. 发明公开

EP1820881A3 Low-K dielectric layers for large substrates 审中-公开
标题翻译：对于大面积基板的低K电介质层
公开(公告)号：EP1820881A3
公开(公告)日：2007-12-12
申请号：EP07101507.7
申请日：2007-01-31
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W. , Dieguez-Campo, Jose M. , Liehr, Michael
IPC分类号： C23C16/46 , H01J17/49
CPC分类号： C23C16/0227 , C23C16/402 , C23C16/46 , C23C16/50 , H01J9/02 , H01J11/12 , H01J11/38
摘要： A system and method for producing a film is described. One embodiment of the process includes the following processes: providing a substrate comprising a glass plate, electrodes; and bus bars; heating the substrate to an approximate critical temperature; initiating the chemical vapor deposition process when the substrate is near the approximate critical temperature, thereby depositing a film on the substrate; maintaining the upper portion of the film at approximately the critical temperature while the chemical vapor deposition process is ongoing; terminating the chemical vapor deposition process once the film has reached a desired thickness; and cooling the substrate and the deposited film.

6. 发明公开

EP1780304A3 PECVD method with modulation of power 审中-公开
标题翻译：与功率调制PECVD工艺
公开(公告)号：EP1780304A3
公开(公告)日：2009-11-18
申请号：EP06022262.7
申请日：2006-10-25
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W.
IPC分类号： C23C16/515 , C23C16/30 , H01J37/32
CPC分类号： C23C16/515 , C23C16/029 , C23C16/308 , C23C16/401 , C23C16/52 , H01J37/32201
摘要： A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.

7. 发明公开

EP1921659A3 System and method for control of electromagnetic radiation in PECVD discharge processes 审中-公开
标题翻译：系统和方法，用于PECVD工艺放电期间控制电磁辐射
公开(公告)号：EP1921659A3
公开(公告)日：2009-06-10
申请号：EP07115860.4
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W. , Liehr, Michael , Dieguez-Campo, Jose Manuel
IPC分类号： H01J37/32
CPC分类号： H01J37/32357 , C23C16/452 , C23C16/482 , C23C16/517 , C23C16/52 , H01J37/32339 , H01J37/32623
摘要： A system and method for coating a substrate with a film is described. One embodiment includes a process that provides a substrate on which to deposit a film; generates a plasma to produce radicals from a support gas; produces the radicals from the support gas; disassociates a precursor gas using the radicals; deposits material from the disassociated precursor gas on the substrate; and controls the amount of electromagnetic radiation to which the deposited material is exposed.

8. 发明公开

EP1921657A2 System and Method for Generating Ions and Radicals 审中-公开
标题翻译：系统与Verfahren zur Erzeugung von Ionen und Radikalen
公开(公告)号：EP1921657A2
公开(公告)日：2008-05-14
申请号：EP07115857.0
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W. , Klemm, Günter , Hacker, Volker , Lotz, Hans-Georg
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J27/16 , H01J37/32009 , H01J37/3233 , H01J37/32366
摘要： A system and method for producing electrons and ions are disclosed. One embodiment includes an outer electrode (125) with a discharge chamber (135); an inner electrode (130) positioned inside the discharge chamber, the inner electrode positioning forming a upper portion of the discharge chamber and a lower portion of the discharge chamber; and a gas inlet positioned in the lower portion of the discharge chamber; wherein a plasma formed within the lower portion of the discharge chamber provides priming particles usable to form a plasma in the upper portion of the discharge chamber.
摘要翻译：公开了一种用于产生电子和离子的系统和方法。一个实施例包括具有放电室（135）的外部电极（125）; 位于所述放电室内部的内部电极（130），所述内部电极定位形成所述放电室的上部和所述放电室的下部; 以及位于所述排出室的下部的气体入口; 其中形成在所述放电室的下部内的等离子体提供可用于在所述放电室的上部形成等离子体的引发粒子。

9. 发明公开

EP1921658A3 System and method for shielding during PECVD deposition processes 审中-公开
标题翻译：系统和用于屏蔽方法期间PECVD沉积工艺
公开(公告)号：EP1921658A3
公开(公告)日：2009-05-06
申请号：EP07115859.6
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W.
IPC分类号： H01J37/32
CPC分类号： H01J37/32321 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J2237/3321
摘要： A system and method for plasma enhanced chemical vapor deposition is described. One embodiment includes a process chamber (150); a substrate support (120) positioned inside the process chamber, the substrate support configured to support a substrate (125) on which a film will be deposited; an antenna (110) located inside the process chamber; a radical shield (145) partially surrounding the antenna, the radical shield having an inner volume; a support gas inlet (155) positioned to supply support gas to the inner volume of the radical shield; a precursor gas inlet configured to supply a precursor gas to the inside of the process chamber; at least one aperture (160) in the radical shield, the aperture positioned to enable radicals to escape the inner volume of the radical shield and collide with the precursor gas.

10. 发明公开

EP1921659A2 System and method for control of electromagnetic radiation in PECVD discharge processes 审中-公开
标题翻译：系统和方法，用于PECVD工艺放电期间控制电磁辐射
公开(公告)号：EP1921659A2
公开(公告)日：2008-05-14
申请号：EP07115860.4
申请日：2007-09-06
申请人： Applied Materials, Inc.
发明人： Stowell, Michael W. , Liehr, Michael , Dieguez-Campo, Jose Manuel
IPC分类号： H01J37/32
CPC分类号： H01J37/32357 , C23C16/452 , C23C16/482 , C23C16/517 , C23C16/52 , H01J37/32339 , H01J37/32623
摘要： A system and method for coating a substrate with a film is described. One embodiment includes a process that provides a substrate on which to deposit a film; generates a plasma to produce radicals from a support gas; produces the radicals from the support gas; disassociates a precursor gas using the radicals; deposits material from the disassociated precursor gas on the substrate; and controls the amount of electromagnetic radiation to which the deposited material is exposed.
摘要翻译：一种用于与一个膜涂覆基材的系统和方法进行说明。一个实施例包括一个processthat提供要在其上沉积膜的衬底一个; 产生等离子体，以产生从支撑气体生成活性基; 产生从支承气体的自由基; 的关联使用自由基的前体气体; 沉积物从基板上的解离前体气体材料; 和控制，以其中沉积的材料暴露的电磁辐射的量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式