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1. 发明公开

EP1780303A2 System and method for power function ramping of microwave linear discharge sources 审中-公开
标题翻译：装置和方法，用于起动的微波线性放电源功率
公开(公告)号：EP1780303A2
公开(公告)日：2007-05-02
申请号：EP06022261.9
申请日：2006-10-25
申请人： Applied Films Corporation , Applied Materials GmbH & Co. KG
发明人： Stowell, Michael W. , Liehr, Michael , Wieder, Stephan , Dieguez-Campo, José Manuel
IPC分类号： C23C16/515 , H01J37/32
CPC分类号： C23C16/515
摘要： One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.
摘要翻译：本发明的一个方式是用于在衬底上沉积薄膜的系统。该系统包括真空室; 在真空室内部一栋线性放电管; 被配置为产生微波功率信号的磁控管也可以施加到线性放电管; 配置成提供信号到磁控管的电源; 和pulseCONTROL连接到电源。所述pulseCONTROL被配置为控制脉冲的多元化，脉冲的多个频率和/或脉冲的多个轮廓的占空比。

2. 发明公开

EP1780303A3 System and method for power function ramping of microwave linear discharge sources 审中-公开
标题翻译：装置和方法，用于起动的微波线性放电源功率
公开(公告)号：EP1780303A3
公开(公告)日：2010-07-07
申请号：EP06022261.9
申请日：2006-10-25
申请人： Applied Materials, Inc. , Applied Materials GmbH & Co. KG
发明人： Stowell, Michael W. , Liehr, Michael , Wieder, Stephan , Dieguez-Campo, José Manuel
IPC分类号： C23C16/515 , H01J37/32
CPC分类号： C23C16/515
摘要： One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.

3. 发明公开

EP1734149A3 Method for controlling ion density in a sputtering system 审中-公开
标题翻译：一种用于在溅射系统控制离子密度方法。
公开(公告)号：EP1734149A3
公开(公告)日：2007-09-19
申请号：EP06011555.7
申请日：2006-06-03
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/32935 , C23C14/34 , C23C14/54 , H01J37/3405
摘要： A method for controlling ion density and sputtering rate in a sputtering system is disclosed. In one embodiment, a first pulse-width power signal is applied to the cathode to thereby generate a higher concentration of ions. The pulse-width of the first pulse-width power signal is then decreased to thereby increase the sputtering rate and decrease the ion density around the cathode. Next, the process is repeated to create a modulated signal.

4. 发明公开

EP1734558A1 System for modulating power signals to control sputtering 审中-公开
标题翻译： Anlagefürdie Modulation von Leistungssignalen zur Sputterprozessregelung
公开(公告)号：EP1734558A1
公开(公告)日：2006-12-20
申请号：EP06011554.0
申请日：2006-06-03
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01J37/32137 , H01J37/32027 , H01J37/32036 , H01J37/32743 , H01J37/32752 , H01J37/34
摘要： One embodiment includes a sputtering system (165) that includes a vacuum chamber; a substrate transport system configured to transport a substrate through the vacuum chamber; a cathode (90) for supporting a sputtering target (95), the cathode at least partially inside the vacuum chamber; and a power supply (160) configured to supply power to the cathode and the power supply configured to output a modulated power signal. Depending upon the implementation, the power supply can be configured to output an amplitude-modulated power signal; a frequency-modulated power signal; a pulse-width power signal; a pulse-position power signal; a pulse-amplitude modulated power signal; or any other type of modulated power or energy signal.
摘要翻译：一个实施例包括包括真空室的溅射系统（165）; 衬底输送系统，被配置为将衬底输送通过所述真空室; 用于支撑溅射靶（95）的阴极（90），阴极至少部分地位于真空室内; 以及被配置为向阴极供电的电源（160）和被配置为输出调制功率信号的电源。根据实施方式，电源可以被配置为输出调幅功率信号; 频率调制功率信号; 脉冲宽度功率信号; 脉冲位置功率信号; 脉冲幅度调制功率信号; 或任何其他类型的调制功率或能量信号。

5. 发明公开

EP1780304A2 PECVD method with modulation of power 审中-公开
标题翻译： PECVD-Verfahren mit Leistungsmodulation
公开(公告)号：EP1780304A2
公开(公告)日：2007-05-02
申请号：EP06022262.7
申请日：2006-10-25
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： C23C16/515 , C23C16/30 , H01J37/32
CPC分类号： C23C16/515 , C23C16/029 , C23C16/308 , C23C16/401 , C23C16/52 , H01J37/32201
摘要： A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.
摘要翻译：公开了一种在化学气相沉积工艺期间产生膜的方法。一个实施例包括产生具有第一脉冲幅度的第一电脉冲; 使用第一电脉冲产生第一密度的激进化物种; 使用在自由基化物质的第一密度中的自由基化物质分解原料气体，从而产生第一沉积材料; 将第一沉积材料沉积在基底上; 产生具有第二脉冲幅度的第二电脉冲，其中所述第二脉冲幅度不同于所述第一脉冲宽度; 使用第二电脉冲产生第二密度的激进物质; 使用所述自由基化物质在第二密度的自由基化物质中分离原料气体，从而产生第二沉积材料; 以及将所述第二多个沉积材料沉积在所述第一沉积材料上。

6. 发明公开

EP1734149A2 Method for controlling ion density in a sputtering system 审中-公开
标题翻译：在einem Sputtersystem中的Verfahren zur Steuerung der Ionendichte。
公开(公告)号：EP1734149A2
公开(公告)日：2006-12-20
申请号：EP06011555.7
申请日：2006-06-03
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/32935 , C23C14/34 , C23C14/54 , H01J37/3405
摘要： A method for controlling ion density and sputtering rate in a sputtering system is disclosed. In one embodiment, a first pulse-width power signal is applied to the cathode to thereby generate a higher concentration of ions. The pulse-width of the first pulse-width power signal is then decreased to thereby increase the sputtering rate and decrease the ion density around the cathode. Next, the process is repeated to create a modulated signal.
摘要翻译：公开了一种用于控制溅射系统中的离子密度和溅射速率的方法。在一个实施例中，向阴极施加第一脉冲宽度功率信号，从而产生较高浓度的离子。然后降低第一脉冲宽度功率信号的脉冲宽度，从而增加溅射速率并降低阴极周围的离子密度。接下来，重复该过程以产生调制信号。

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