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    • 7. 发明公开
    • Method of coating a substrate and coating installation
    • Verfahren zur Beschichtung eines Substrats und Beschichtungsanlage
    • EP2086033A1
    • 2009-08-05
    • EP08101176.9
    • 2008-01-31
    • Applied Materials, Inc.
    • König, MichaelMichael, KlausBangert, StefanHoffmann, UweLandgraf, Heike
    • H01L51/00
    • H01L51/0021H01L51/5203
    • A method according to the invention comprises the step of providing a large-area substrate 1 and a first semiconductor, metal, or TCO (Transparent Conductive Oxide) layer 2 deposited on a surface of the substrate 1 ( Fig. 1a ). In the next process step illustrated in Fig. 1b a patterned mask layer 3 is printed on top of the first layer 2. The mask layer 3 consists of a phase-change material, e.g. wax, which may be deposited in an inkjet printing method. The phase-change material 3 has the ability to change in phase from a liquid to a solid state upon contact with the substrate 1. In a third process step a second semiconductor, metal, TCO (Transparent Conductive Oxide) layer 4 is deposited on top of the mask layer 3 and on the first layer 2 where the first layer 2 is not protected by the phase-change masking material 3. Afterwards, in a process step indicated in Fig. 1d the phase-change material 3 is removed. The second patterned layer structure 5 is arranged on top of the first layer 2 in the areas that had not been protected by the phase-change material. The method is proposed particularly for providing a first electrode of an organic electronic device.
    • 根据本发明的方法包括提供大面积衬底1和沉积在衬底1(图1a)的表面上的第一半导体,金属或TCO(透明导电氧化物)层2的步骤。 在图1所示的下一个工艺步骤中, 在图1b中,图案化的掩模层3被印刷在第一层2的顶部上。掩模层3由相变材料,例如, 蜡,其可以以喷墨印刷方法沉积。 相变材料3在与基板1接触时具有从液体到固态的相位变化的能力。在第三工艺步骤中,将第二半导体,金属,TCO(透明导电氧化物)层4沉积在顶部 并且在第一层2上,第一层2不被相变掩模材料3保护。之后,在图1所示的处理步骤中, 在图1d中,除去相变材料3。 在未被相变材料保护的区域中,第二图案层结构5布置在第一层2的顶部上。 特别提出了提供有机电子器件的第一电极的方法。