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1. 发明授权

EP1142832B1 Ionic additives for extreme low dielectric constant chemical formulations 有权
标题翻译：离子添加剂用于化学制剂具有特别低的介电常数
公开(公告)号：EP1142832B1
公开(公告)日：2004-12-15
申请号：EP01303192.7
申请日：2001-04-04
申请人： APPLIED MATERIALS, INC. , AIR PRODUCTS AND CHEMICALS, INC.
发明人： Mandal, Robert P. , Demos, Alexandros T. , Weidman, Timothy , Nault, Michael P. , Bekiaris, Nikolaos , Weigel, Scott Jeffrey , Senecal, Lee A. , MacDougall, James E. , Thridianam, Hareesh
IPC分类号： C01B33/16
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96 , Y10T428/249953 , Y10T428/249969

2. 发明公开

EP1142832A1 Ionic additives for extreme low dielectric constant chemical formulations 有权
标题翻译： Ionische Additivefürchemischen Formulierungen mit besonders kleinerDielektrizitätskonstante
公开(公告)号：EP1142832A1
公开(公告)日：2001-10-10
申请号：EP01303192.7
申请日：2001-04-04
申请人： APPLIED MATERIALS, INC. , AIR PRODUCTS AND CHEMICALS, INC.
发明人： Mandal, Robert P. , Demos, Alexandros T. , Weidman, Timothy , Nault, Michael P. , Bekiaris, Nikolaos , Weigel, Scott Jeffrey , Senecal, Lee A. , MacDougall, James E. , Thridianam, Hareesh
IPC分类号： C01B33/16
CPC分类号： H01L21/02126 , C01B33/16 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96 , Y10T428/249953 , Y10T428/249969
摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH 3 ) 3 ] + A - , where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A - is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.
摘要翻译：使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法利用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂铵型盐在酸性前体溶液中。使用该前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的膜。在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂如四烷基铵盐和胺添加到原料前体溶液中来实现。在一些实施方案中，离子添加剂是选自一般组成为ΛNR（CH 3）3 OH - 的阳离子添加剂的化合物，其中R是链长为1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A 1是阴离子，其可以选自基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成的组以及它们的组合。在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四有机铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化期间除去的碱离子杂质（钠和钾）以促进所形成的电介质的形成。

3. 发明公开

EP1146014A3 Mesoporous silica films with mobile ion gettering and accelerated processing 有权
标题翻译：与移动离子的吸杂和加速处理的中孔二氧化硅层
公开(公告)号：EP1146014A3
公开(公告)日：2002-04-03
申请号：EP01303414.5
申请日：2001-04-11
申请人： Applied Materials, Inc.
发明人： Mandal, Robert P.
IPC分类号： C01B37/02 , H01L21/312 , H01L21/768 , H01L21/316
CPC分类号： H01L21/02129 , C01B37/02 , C23C16/54 , H01L21/02203 , H01L21/02214 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/02359 , H01L21/02362 , H01L21/31695
摘要： The present invention generally provides a process and an apparatus for depositing low dielectric constant films on a substrate. The low dielectric constant films are phosphorus doped mesoporous oxide films formed by depositing and curing a phosphorus containing sol-gel precursor to form an oxide film having interconnecting pores of uniform diameter, and then annealing the film in an inert gas atmosphere or exposing the film to an oxidizing atmosphere containing a reactive oxygen species to form a phosphorus doped mesoporous oxide film.

4. 发明公开

EP1146014A2 Mesoporous silica films with mobile ion gettering and accelerated processing 有权
标题翻译： Sil ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung
公开(公告)号：EP1146014A2
公开(公告)日：2001-10-17
申请号：EP01303414.5
申请日：2001-04-11
申请人： Applied Materials, Inc.
发明人： Mandal, Robert P.
IPC分类号： C01B37/02 , H01L21/312 , H01L21/768 , H01L21/316
CPC分类号： H01L21/02129 , C01B37/02 , C23C16/54 , H01L21/02203 , H01L21/02214 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/02359 , H01L21/02362 , H01L21/31695
摘要： The present invention generally provides a process and an apparatus for depositing low dielectric constant films on a substrate. The low dielectric constant films are phosphorus doped mesoporous oxide films formed by depositing and curing a phosphorus containing sol-gel precursor to form an oxide film having interconnecting pores of uniform diameter, and then annealing the film in an inert gas atmosphere or exposing the film to an oxidizing atmosphere containing a reactive oxygen species to form a phosphorus doped mesoporous oxide film.
摘要翻译：本发明通常提供了一种用于在衬底上沉积低介电常数膜的方法和装置。低介电常数膜是通过沉积和固化含磷溶胶 - 凝胶前体形成具有均匀直径的互连孔的氧化膜形成的磷掺杂介孔氧化物膜，然后在惰性气体气氛中退火膜或将膜暴露于含有活性氧的氧化气氛形成磷掺杂的介孔氧化物膜。

5. 发明公开

EP1607493A3 Plasma processes for depositing low dielectric constant films 有权
标题翻译： Plasmaabscheidungsprozesse bei dielektrischen Filmen mit geringerDielektrizitätskonstante
公开(公告)号：EP1607493A3
公开(公告)日：2007-07-04
申请号：EP05014450.0
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： Cheung, David , Yau, Wai-Fan , Mandal, Robert P. , Jeng, Shin-Puu , Liu, Kuo-Wei , Lu, Yung-Cheng , Barnes, Mike , Willecke, Ralf B. , Moghadam, Farhad , Ishikawa, Tetsuya , Poon, Tze
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031
摘要： A method for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH 3 SIH 3 , dimethylsilane, (CH 3 ) 2 SiH 2 , or 1,1,3,3-tetramethyldisiloxane, (CH 3 ) 2 -SiH-O-SiH-(CH 3 ) 2 , and nitrous oxide, N 2 O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30% of the duty cycle.
摘要翻译：一种通过有机硅化合物和氧化气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法或约20W至约500W的脉冲RF功率水平的方法。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以有助于控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它电介质层的衬垫或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也提供不同介电层之间优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SIH 3，二甲基硅烷，（CH 3）2 SiH 2或1,1,3,3-四甲基二硅氧烷，（CH 3）2 -SiH-O-SiH- （CH 3）2和一氧化二氮N 2 O，在约10W至约150W的恒定RF功率水平下，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

6. 发明授权

EP1607493B1 Plasma processes for depositing low dielectric constant films 有权
标题翻译：在电介质膜的等离子体沉积工艺具有低介电常数
公开(公告)号：EP1607493B1
公开(公告)日：2008-12-10
申请号：EP05014450.0
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： Cheung, David , Yau, Wai-Fan , Mandal, Robert P. , Jeng, Shin-Puu , Liu, Kuo-Wei , Lu, Yung-Cheng , Barnes, Mike , Willecke, Ralf B. , Moghadam, Farhad , Ishikawa, Tetsuya , Poon, Tze
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031

7. 发明公开

EP1607493A2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：在电介质膜的等离子体沉积工艺具有低介电常数
公开(公告)号：EP1607493A2
公开(公告)日：2005-12-21
申请号：EP05014450.0
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： Cheung, David , Yau, Wai-Fan , Mandal, Robert P. , Jeng, Shin-Puu , Liu, Kuo-Wei , Lu, Yung-Cheng , Barnes, Mike , Willecke, Ralf B. , Moghadam, Farhad , Ishikawa, Tetsuya , Poon, Tze
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH 3 SIH 3 , dimethylsilane, (CH 3 ) 2 SiH 2 , or 1,1,3,3-tetramethyldisiloxane, (CH 3 ) 2 -SiH-O-SiH-(CH 3 ) 2 , and nitrous oxide, N 2 O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30% of the duty cycle.

8. 发明公开

EP1018527A2 Nano-porous copolymer films having low dielectric constants 审中-公开
标题翻译： Nano-poröseKopolymerschichten mit niedriger dielektrischen Konstante
公开(公告)号：EP1018527A2
公开(公告)日：2000-07-12
申请号：EP99309890.4
申请日：1999-12-09
申请人： Applied Materials, Inc.
发明人： Mandal, Robert P. , Cheung, David W. , Lee, Peter Wai-Mun , Lang, Chi-I
IPC分类号： C08G61/02 , B05D1/00 , H01L21/312
CPC分类号： H01L21/02118 , B05D1/60 , C08G61/025 , C08G2261/3424 , H01L21/02126 , H01L21/02203 , H01L21/312 , H01L21/31695 , Y10S438/958
摘要： A method and apparatus for forming thin copolymer layers having low dielectric constants on semiconductor substrates includes in situ formation of p-xylylenes, or derivatives thereof, from solid or liquid precursors such as cyclic p-xylylene dimer, p-xylene, 1,4-bis(formatomethyl)benzene, or 1,4-bis(N-methyl-aminomethyl)benzene. P-xylylene is copolymerized with a comonomer having labile groups that are converted to dispersed gas bubbles after the copolymer layer is deposited on the substrate. Preferred comonomers comprise diazocyclopentadienyl, diazoquinoyl, formyloxy, or glyoxyloyloxy groups.
摘要翻译：用于在半导体衬底上形成具有低介电常数的薄共聚物层的方法和装置包括从固体或液体前体如环状对二甲苯二聚体，对二甲苯，1,4-二恶烷等原位形成对二甲苯或其衍生物，双（格式甲基）苯或1,4-双（N-甲基 - 氨基甲基）苯。在共聚物层沉积在基材上之后，将对二甲苯与具有不稳定基团的共聚单体共聚，转化成分散的气泡。优选的共聚单体包括重氮环戊二烯基，重氮醌基，甲酰氧基或乙酰氧基合氧基。

9. 发明公开

EP1119035A3 Method for depositing a low dielectric constant film 审中-公开
标题翻译：沉积低介电常数的电介质膜的方法
公开(公告)号：EP1119035A3
公开(公告)日：2005-06-08
申请号：EP00126111.4
申请日：2000-11-29
申请人： Applied Materials, Inc.
发明人： Mandal, Robert P.
IPC分类号： H01L21/316 , H01L21/768 , C23C16/40 , C23C16/56
CPC分类号： C23C16/401 , C23C16/402 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994
摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally labile groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

10. 发明授权

EP1146014B1 Mesoporous silica films with mobile ion gettering and accelerated processing 有权
标题翻译：与移动离子的吸杂和加速处理的中孔二氧化硅层
公开(公告)号：EP1146014B1
公开(公告)日：2005-03-30
申请号：EP01303414.5
申请日：2001-04-11
申请人： Applied Materials, Inc.
发明人： Mandal, Robert P.
IPC分类号： C01B37/02 , H01L21/312 , H01L21/768 , H01L21/316
CPC分类号： H01L21/02129 , C01B37/02 , C23C16/54 , H01L21/02203 , H01L21/02214 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/02359 , H01L21/02362 , H01L21/31695

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