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1. 发明公开

EP1073108A1 Chemical vapor deposition process for dielectric material 有权
标题翻译：化学反应气相色谱法
公开(公告)号：EP1073108A1
公开(公告)日：2001-01-31
申请号：EP00306321.1
申请日：2000-07-25
申请人： Applied Materials, Inc.
发明人： Wang, Yaxin , Chan, Diana , Sahin, Turgut , Ishikawa, Tetsuya , Moghadam, Farhad
IPC分类号： H01L21/316 , C23C16/40 , C23C16/455
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/455 , H01J37/3244 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/31625 , H01L21/31629
摘要： A substrate processing system (100) includes a housing (102) defining a chamber for forming a film on the substrate (122) surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles (136) that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate (140) surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.
摘要翻译：衬底处理系统（100）包括壳体（102），其限定用于在设置在腔室内的衬底的衬底（122）表面上形成膜的室。该系统包括第一多个喷嘴（136），其延伸到室中，用于从基板（140）表面的周边第一距离处注入第一化学品，以及第二多个喷嘴，其延伸到室中，用于注入距离衬底表面的周边第二距离的第二化学品。第二距离基本上等于或小于第一距离。在一个实施例中，第一化学品包含电介质材料，第二化学品含有与第一化学物质反应以在衬底上沉积掺杂电介质材料的掺杂物质。注入比以前更接近于衬底表面的掺杂剂物质确保掺杂剂物质基本均匀地分布在衬底表面上并沉积稳定的掺杂介电层。

2. 发明公开

EP1039524A3 Silicon nitride composite HDP/CVD process 审中-公开
标题翻译：硅氮化钛复合HDP / CVD法
公开(公告)号：EP1039524A3
公开(公告)日：2003-08-13
申请号：EP00300919.8
申请日：2000-02-07
申请人： Applied Materials, Inc.
发明人： Cheng, Lie-Yea , Chan, Chiu , Moghadam, Farhad
IPC分类号： H01L21/318 , H01L23/532
CPC分类号： H01L21/3145 , H01L21/3185 , H01L21/76801 , H01L23/3192 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for forming a barrier film on a substrate by depositing a first dielectric film, such as a tetra-ethyl-ortho-silicate (TEOS) film, on a substrate and depositing a silicon nitride film over the dielectric film. Preferably, the method further comprises depositing a silicate glass film over the barrier film. The present invention further provides a semiconductor device comprising: a polysilicon substrate; a dielectric film deposited over the polysilicon substrate; a silicon nitride film deposited over the dielectric film; a silicate glass film deposited over the silicon nitride film; and a metal film deposited selectively over the silicate glass film.
摘要翻译：本发明提供了一种在基板上形成阻挡膜的方法，该方法是在衬底上沉积第一介电膜，例如四乙基原硅酸盐（TEOS）膜，并在该电介质膜上沉积氮化硅膜。优选地，该方法还包括在阻挡膜上沉积硅酸盐玻璃膜。本发明还提供一种半导体器件，包括：多晶硅衬底; 沉积在所述多晶硅衬底上的电介质膜; 沉积在电介质膜上的氮化硅膜; 沉积在氮化硅膜上的硅酸盐玻璃膜; 以及选择性地沉积在硅酸盐玻璃膜上的金属膜。

3. 发明公开

EP1059664A2 Method of depositing and etching dielectric layers 审中-公开
标题翻译： Verfahren zur Abscheidung und zumÄtzenvon dielektrischen Schichten
公开(公告)号：EP1059664A2
公开(公告)日：2000-12-13
申请号：EP00112300.9
申请日：2000-06-08
申请人： Applied Materials, Inc.
发明人： Bjorkman, Claes H. , Min, Yu Melissa , Shan, Hongqing , Cheung, David W. , Yau, Wai-fan , Chopra, Nasreen Gazala , Yin, Gerald Zheyao , Moghadam, Farhad , Huang, Judy H. , Yost, Dennis J. , Tang, Sum-Yee Betty , Kim, Yunsang , Liu, Kuo-Wei
IPC分类号： H01L21/312 , H01L21/311 , H01L21/762 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻介电层的方法，其具有低介电常数和蚀刻速率，其变化至少为3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，从而提供低k电介质层，可以替代蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度来蚀刻形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从蚀刻气体排除以形成水平互连。

4. 发明公开

EP1148539A3 Method of depositing low K films using an oxidizing plasma 审中-公开
标题翻译：使用氧化等离子体具有低介电常数膜的生产，
公开(公告)号：EP1148539A3
公开(公告)日：2004-12-29
申请号：EP01303567.0
申请日：2001-04-19
申请人： APPLIED MATERIALS, INC.
发明人： Huang, Tzu-Fang , Lu, Yung-Cheng , Xia, Li-Qun , Yieh, Ellie , Yau, Wai-Fan , Cheung, David W. , Willecke, Ralf B. , Liu, Kuo-Wei , Lee, Ju-Hyung , Moghadam, Farhad , Ma, Yeming Jim
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited-by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm 2 and about 3.2 W/cm 2 . An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH 3 ) 3 SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

5. 发明公开

EP1148539A2 Method of depositing low K films using an oxidizing plasma 审中-公开
标题翻译：使用氧化等离子体具有低介电常数膜的生产，
公开(公告)号：EP1148539A2
公开(公告)日：2001-10-24
申请号：EP01303567.0
申请日：2001-04-19
申请人： APPLIED MATERIALS, INC.
发明人： Huang, Tzu-Fang , Lu, Yung-Cheng , Xia, Li-Qun , Yieh, Ellie , Yau, Wai-Fan , Cheung, David W. , Willecke, Ralf B. , Liu, Kuo-Wei , Lee, Ju-Hyung , Moghadam, Farhad , Ma, Yeming Jim
IPC分类号： H01L21/316
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited-by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm 2 and about 3.2 W/cm 2 . An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH 3 ) 3 SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
摘要翻译：氧化硅层是通过等离子体增强的有机硅化合物的氧化所产生的，以沉积由atomicweight的至少1％的碳含量的薄膜。具有低水分含量和耐开裂膜沉积-通过在功率密度为0.9W之间的范围内将氧气引入所述处理腔室以小于或等于所述有机硅化合物的流速的流速，并产生等离子体/ 厘米<2>和大约3.2瓦/厘米<2>。任选的载体气体可被引入，以便于流率小于或等于所述有机硅化合物的流速的淀积工艺。的有机硅化合物优选具有键合到每个硅原子2或3个碳原子：例如三甲基硅烷（CH 3）3SiH。富含氧气的表面可以通过有机硅化合物的暂时增加氧化相邻地形成的氧化硅层。

6. 发明公开

EP1081249A1 Method for depositing fluorinated silica glass layers 审中-公开
标题翻译： Verfahren zum Auftragen fluorierter Silikaglas-Schichten
公开(公告)号：EP1081249A1
公开(公告)日：2001-03-07
申请号：EP00119011.5
申请日：2000-09-01
申请人： Applied Materials, Inc.
发明人： M'Saad, Hichem , Tribula, Dana , Vellaikal, Manoj , Desai, Sameer , Moghadam, Farhad
IPC分类号： C23C16/40 , C23C16/50 , H01L21/316
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629
摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH 4 ), silicon tetrafluoride (SiF 4 ), oxygen (O 2 ) and argon (Ar) are used as the reactant gases. SiH 4 , SiF 4 , and O 2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH 4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH 4 with the SiF 4 tends to mitigate the destructive effects of SiF 4 throughout most of the deposition. By removing the SiH 4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
摘要翻译：在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。硅烷（SiH4），四氟化硅（SiF4），氧（O2）和氩（Ar）用作反应气体。 SiH4，SiF4和O2反应形成FSG。引入Ar来促进气体分解。所有四种气体都用于沉积大部分FSG膜。在沉积FSG膜的界面部分期间不使用SiH4。如果将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4一起使用可以减轻SiF4在大部分沉积过程中的破坏作用。通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中更少的氢被引入到膜中，并且改善了覆盖或下层氮化硅的粘附性。

7. 发明公开

EP1063692A1 Process for depositing a low dielectric constant film 审中-公开
标题翻译： Verfahren zur Abscheidung eines Films mit niedrigerDielektrizitätskonstante
公开(公告)号：EP1063692A1
公开(公告)日：2000-12-27
申请号：EP00112820.6
申请日：2000-06-16
申请人： Applied Materials, Inc.
发明人： Moghadam, Farhad , Cheung, David W. , Yieh, Ellie , Xia, Li-Qun , Yau, Wai-Fan , Lang, Chi-I , Jeng, Shin-Puu , Gaillard, Frederick , Venkataraman, Shankar , Nemani, Srinivas D.
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31053 , H01L21/3122 , H01L21/31604 , H01L21/31612 , H01L21/76828 , H01L21/76834
摘要： A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400°C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micrometer devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40°C onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.
摘要翻译：一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残留的碳并且可用于间隙填充层，预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。羟基化合物可以在从水或有机化合物沉积之前制备。氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

8. 发明授权

EP1607493B1 Plasma processes for depositing low dielectric constant films 有权
标题翻译：在电介质膜的等离子体沉积工艺具有低介电常数
公开(公告)号：EP1607493B1
公开(公告)日：2008-12-10
申请号：EP05014450.0
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： Cheung, David , Yau, Wai-Fan , Mandal, Robert P. , Jeng, Shin-Puu , Liu, Kuo-Wei , Lu, Yung-Cheng , Barnes, Mike , Willecke, Ralf B. , Moghadam, Farhad , Ishikawa, Tetsuya , Poon, Tze
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031

9. 发明公开

EP1607493A2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：在电介质膜的等离子体沉积工艺具有低介电常数
公开(公告)号：EP1607493A2
公开(公告)日：2005-12-21
申请号：EP05014450.0
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： Cheung, David , Yau, Wai-Fan , Mandal, Robert P. , Jeng, Shin-Puu , Liu, Kuo-Wei , Lu, Yung-Cheng , Barnes, Mike , Willecke, Ralf B. , Moghadam, Farhad , Ishikawa, Tetsuya , Poon, Tze
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH 3 SIH 3 , dimethylsilane, (CH 3 ) 2 SiH 2 , or 1,1,3,3-tetramethyldisiloxane, (CH 3 ) 2 -SiH-O-SiH-(CH 3 ) 2 , and nitrous oxide, N 2 O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30% of the duty cycle.

10. 发明公开

EP1059664A3 Method of depositing and etching dielectric layers 审中-公开
标题翻译：一种用于电介质层的沉积和蚀刻工艺
公开(公告)号：EP1059664A3
公开(公告)日：2001-10-10
申请号：EP00112300.9
申请日：2000-06-08
申请人： Applied Materials, Inc.
发明人： Bjorkman, Claes H. , Min, Yu Melissa , Shan, Hongqing , Cheung, David W. , Yau, Wai-fan , Chopra, Nasreen Gazala , Yin, Gerald Zheyao , Moghadam, Farhad , Huang, Judy H. , Yost, Dennis J. , Tang, Sum-Yee Betty , Kim, Yunsang , Liu, Kuo-Wei
IPC分类号： H01L21/312 , H01L21/311 , H01L21/762 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

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