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81. 发明公开

EP1932156A4 SELF-IDENTIFYING STACKED DIE SEMICONDUCTOR COMPONENTS 有权
标题翻译：自识别堆叠芯片的半导体器件
公开(公告)号：EP1932156A4
公开(公告)日：2010-10-27
申请号：EP06800871
申请日：2006-08-07
申请人： MICRON TECHNOLOGY INC
发明人： SILVESTRI PAUL
IPC分类号： G11C5/06
CPC分类号： G11C8/10 , G11C5/02 , G11C5/063 , H01L2224/16145

82. 发明公开

EP2195841A2 MEMORY DEVICE INTERFACE METHODS, APPARATUS, AND SYSTEMS 审中-公开
标题翻译：内存配置接口方法，设备和系统
公开(公告)号：EP2195841A2
公开(公告)日：2010-06-16
申请号：EP08795662.9
申请日：2008-08-28
申请人： Micron Technology, Inc.
发明人： JEDDELOH, Joe, M.
IPC分类号： H01L25/065 , H01L23/48
CPC分类号： G11C5/06 , H01L23/481 , H01L25/0652 , H01L25/0657 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2225/06513 , H01L2225/06541
摘要： Apparatus and systems may include a substrate, an interface chip disposed on the substrate, a first memory die having a plurality of memory arrays disposed on the interface chip, the first memory die coupled to a plurality of through wafer interconnects (TWI), and a second memory die having a plurality of memory arrays disposed on the first memory die, the second memory die including a plurality of vias, wherein the plurality of vias are configured to allow the plurality of TWI to pass through the second memory die. The second memory die may be coupled to a second plurality of TWI. In this way, the interface chip may be used to communicatively couple the first memory die and the second memory die using the first and second plurality of TWI. Other apparatus, systems, and methods are disclosed.

84. 发明公开

EP2176886A1 CASCODE CURRENT SENSOR FOR DISCRETE POWER SEMICONDUCTOR DEVICES 有权
标题翻译： KASKODENSTROMSENSOR半导体分立器件
公开(公告)号：EP2176886A1
公开(公告)日：2010-04-21
申请号：EP08794842.8
申请日：2008-07-29
申请人： Advanced Analogic Technologies, Inc.
发明人： WILLIAMS, Richard, K.
IPC分类号： H01L29/78 , H02M1/08 , H01L29/80
CPC分类号： G01R19/0092 , G01R1/203 , H01L23/49575 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/17 , H01L24/25 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/088 , H01L29/1087 , H01L29/41758 , H01L29/4238 , H01L29/7833 , H01L2224/0401 , H01L2224/04042 , H01L2224/05093 , H01L2224/05558 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2224/48599 , H01L2224/49111 , H01L2224/49171 , H01L2224/73207 , H01L2224/73257 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/12035 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H02M2001/0009 , H03K17/0822 , H03K17/18 , H03K2217/0027 , H01L2924/00 , H01L2924/00012
摘要： A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate terminals, respectively, of the sense MOSFET. The drain voltages of the main and sense MOSFETs are equalized, in one embodiment by using a variable current source and negative feedback. The gate width of the main MOSFET is typically larger than the gate width of the sense MOSFET. Using the size ratio of the gate widths, the current in the main MOSFET is measured by sensing the magnitude of the current in the sense MOSFET. Inserting the relatively large MOSFET in the power circuit minimizes power loss.

85. 发明公开

EP2153465A1 PACKAGED SYSTEM OF SEMICONDUCTOR CHIPS HAVING A SEMICONDUCTOR INTERPOSER 审中-公开
标题翻译：与会员之间的半导体用包装系统，半导体芯片
公开(公告)号：EP2153465A1
公开(公告)日：2010-02-17
申请号：EP07784074.2
申请日：2007-05-23
申请人： Texas Instruments Incorporated
发明人： WACHTLER, Kurt, P. , CASTRO, Abram, M. , GERBER, Mark, A.
IPC分类号： H01L23/48
CPC分类号： H01L25/0657 , H01L23/3128 , H01L23/481 , H01L24/16 , H01L24/17 , H01L24/29 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05647 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/73253 , H01L2225/06513 , H01L2225/0652 , H01L2225/06541 , H01L2225/06572 , H01L2225/06586 , H01L2225/1023 , H01L2225/1058 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01077 , H01L2924/01079 , H01L2924/014 , H01L2924/078 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/14 , H01L2924/15173 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/30107 , H01L2924/3512 , H01L2924/00 , H01L2224/05552 , H01L2924/00014
摘要： A semiconductor system (200) of one or more semiconductor interposers (201 ) with a certain dimension (210), conductive vias (212) extending from the first to the second surface, with terminals and attached non-reflow metal studs (215) at the ends of the vias. A semiconducting interposer surface may include discrete electronic components or an integrated circuit. One or more semiconductor chips (202,203) have a dimension (220,230) narrower than the interposer dimension, and an active surface with terminals and non- reflow metal studs (224,234). One chip is flip-attached to the first interposer surface, and another chip to the second interposer surface, so that the interposer dimension projects over the chip dimension. An insulating substrate (204) has terminals and reflow bodies (242) to connect to the studs of the projecting interposer.

86. 发明公开

EP2141975A1 NOISE SHIELDING CASE AND SHIELDING STRUCTURE FOR ELECTRONIC PART 审中-公开
标题翻译： GERÄUSCHABSCHIRMHÜLLEUND ABSCHIRMSTRUKTURFÜREIN ELEKTRONISCHES TEIL
公开(公告)号：EP2141975A1
公开(公告)日：2010-01-06
申请号：EP08739691.7
申请日：2008-04-02
申请人： Nec Corporation
发明人： TSUNEMASU, Kimio
IPC分类号： H05K9/00
CPC分类号： H05K9/0026 , H01L2224/16145 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/16251 , H01L2224/0401
摘要： To effectively suppress an adverse effect of radiation of electrical noise on other electronic circuits and increase the mounting strength of the electronic part on the substrate, where the electrical noise is noise emitted from an electronic part installed on a substrate. The tip of a nozzle for filling with a reinforcing resin is protruded into a noise shielding case through an elongated hole formed in the top board part of the noise shielding case, and the reinforcement resin is placed between the lower surface of the electronic part and the upper surface of the substrate. This realizes the noise shielding case in which a peripheral wall part surrounding the outer surfaces of the electronic part and the top board part covering the upper surface of the electronic part are integrated together. The noise shielding case prevents leakage of radiation of electrical noise from the electronic part.
摘要翻译：为了有效地抑制电噪声的辐射对其他电子电路的不利影响，并且增加电子部件在基板上的安装强度，其中电噪声是从安装在基板上的电子部件发出的噪声。用于填充增强树脂的喷嘴的尖端通过形成在噪声屏蔽壳体的顶板部分中的细长孔而突出到噪声屏蔽壳体中，并且加强树脂被放置在电子部件的下表面和衬底的上表面。这实现了将电子部件的外表面和覆盖电子部件的上表面的顶板部分的外围壁部分整合在一起的噪声屏蔽壳体。噪声屏蔽外壳可防止电子部件的电噪声辐射泄漏。

88. 发明公开

EP2079108A1 SEMICONDUCTOR ELECTRONIC COMPONENT AND SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译： ELEKTRONISCHE HALBLEITERKOMPONENTE UND HALBLEITERANORDNUNG DAMIT
公开(公告)号：EP2079108A1
公开(公告)日：2009-07-15
申请号：EP07831186.7
申请日：2007-10-30
申请人： Sumitomo Bakelite Co., Ltd.
发明人： KATSURAYAMA, Satoru , YAMASHIRO, Tomoe , HIRANO, Takashi
IPC分类号： H01L25/065 , C09J7/00 , C09J11/06 , C09J133/00 , C09J163/00 , C09J171/10 , C09J179/08 , H01L25/07 , H01L25/18
CPC分类号： H01L24/16 , C08G59/42 , C08G59/621 , C08L33/08 , C08L63/00 , C08L2666/02 , C09J163/00 , C09J179/08 , H01L23/3128 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/32 , H01L24/48 , H01L24/81 , H01L24/83 , H01L24/90 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/0554 , H01L2224/05554 , H01L2224/1146 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/81815 , H01L2224/83101 , H01L2224/838 , H01L2224/83851 , H01L2224/83886 , H01L2224/83907 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01009 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01059 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , Y10T428/256 , C08L2666/22 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The problem of the present invention is to provide a chip-on-chip type semiconductor electronic component and a semiconductor device which can meet the requirements for further density increase of semiconductor integrated circuits.
The present invention provides: a chip-on-chip type semiconductor electronic component in which a circuit surface of a first semiconductor chip and a circuit surface of a second semiconductor chip are opposed to each other, wherein the distance X between the first semiconductor chip and the second semiconductor chip is 50 µm or less, and the shortest distance Y between the side surface of the second semiconductor chip and the first external electrode is 1 mm or less; and a semiconductor device comprising the same.
摘要翻译：本发明的问题在于提供一种能够满足半导体集成电路的密度增加的要求的片上芯片型半导体电子部件和半导体装置。本发明提供一种片上芯片型半导体电子元件，其中第一半导体芯片的电路表面和第二半导体芯片的电路表面彼此相对，其中第一半导体芯片与第二半导体芯片之间的距离X 第二半导体芯片为50μm以下，第二半导体芯片的侧面与第一外部电极的最短距离Y为1mm以下，以及包含该半导体器件的半导体器件。

89. 发明公开

EP2033220A2 STACK DIE PACKAGES 有权转让
标题翻译：堆叠模块包
公开(公告)号：EP2033220A2
公开(公告)日：2009-03-11
申请号：EP07809502.3
申请日：2007-06-13
申请人： Marvell World Trade Ltd.
发明人： WU, Albert , KAO, Huahung
IPC分类号： H01L25/065
CPC分类号： H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2224/32145 , H01L2224/45144 , H01L2224/48145 , H01L2224/48227 , H01L2224/731 , H01L2224/73207 , H01L2224/73253 , H01L2225/06506 , H01L2225/0651 , H01L2225/06527 , H01L2924/01079 , H01L2924/14 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit package includes a substrate comprising a first contact. A first integrated circuit mechanically attached to the substrate. The first integrated circuit comprising a second contact. A first redistribution layer arranged on the first integrated circuit. The first redistribution layer includes a trace coupled to the second contact. A first wire connects the first contact to the second contact. A flip-chip integrated circuit comprises a third contact connected to the trace by a conductive bump. A second integrated circuit mechanically coupled to the flip-chip integrated circuit. The second integrated circuit comprises a fourth contact. A second wire connects the fourth contact to at least the second contact or the first contact.
摘要翻译：具有相应方法的集成电路封装包括：包括第一电触点的衬底; 第一引线接合集成电路芯片，其机械耦合到所述衬底并且包括通过第一导电线电耦合到所述衬底的所述第一电接触的第二电接触; 倒装芯片集成电路管芯，其包括通过导电凸块电耦合到所述第一引线集成电路管芯的所述第二电触点的第三电触点; 以及第二键合集成电路管芯，其机械耦合到所述倒装芯片集成电路管芯，并且包括通过以下方式电耦合到所述第一引线集成电路管芯的所述第二电触点或所述衬底的所述第一电触点或两者的第四电触点第二导电线。

90. 发明公开

EP1347517A4 LIGHT EMITTING DEVICE 审中-公开
标题翻译： LEUCHTBAUELEMENT
公开(公告)号：EP1347517A4
公开(公告)日：2009-01-14
申请号：EP01272546
申请日：2001-12-28
申请人： TOYODA GOSEI KK , TORIDONIC OPTOELECTRONICS GMBH , LITEC GBR , LEUCHSTOFFWERK BREITUNGEN GMBH
发明人： OTA KOICHI , HIRANO ATSUO , OTA AKIHITO , TASCH STEFAN , PACHLER PETER , ROTH GUNDULA , TEWS WALTER , KEMPFERT WOLFGANG , STARICK DETLEF
IPC分类号： H01L33/50 , C09K11/77 , F21Y105/10 , F21Y115/10 , H01L33/06 , H01L33/32 , H05B33/20
CPC分类号： C09K11/7795 , B82Y20/00 , C09K11/7721 , C09K11/7734 , C09K11/774 , F21Y2105/10 , F21Y2115/10 , G02B6/0036 , G02B6/0073 , H01L25/0753 , H01L33/06 , H01L33/32 , H01L33/502 , H01L33/507 , H01L2224/16145 , H01L2224/32245 , H01L2224/32257 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00011 , H01L2924/181 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01049 , H01L2924/00012
摘要： A light-emitting device which has a light-emitting element comprising a nitride semiconductor and a phosphor which absorbs a part of a light emitted by the light-emitting element and emits a light having a wavelength different from that of the light having been absorbed, wherein the phosphor comprises an alkaline earth metal silicate activated by europium.
摘要翻译：光源包括在光谱的蓝色和/或UV区域中发射光的元件; 和由任选用铕激活的碱土金属原硅酸盐制成的发光体，并吸收由光源发射并在另一个光谱区域发射的光的一部分。碱土原硅酸盐具有以下成分：（2-xy）SrO x（Ba u，Ca v）。（1-abcd）SiO 2 .aP 2 O 5b Al 2 O 3cB 2O 3dGeO 2：yE 2 + = 0-1.6; y = 0.005-0.5; x + y = 1.6; a，b，c，d = 0-0.5; u + v = 1）和/或组成：（2-xy）BaO.x （Sr u，Ca v）（1-abcd）SiO 2.aP 2 O 5bAl 2 O 3cB 2O 3dGeO 2：yEu 2 + +（其中x = 0-1.6; y = 0.005-0.5; a，b，c， d = 0-0.5; u + v = 1; xu为至少0.4）。 a，b，c和d中的至少一个大于0.01。优选的特征：发光体中的至少一部分硅可被镓取代。一个或多个LED芯片（1）布置在反射器（4）内的电路板（2）上，并且发光体分散在布置在反射器上方的光板（5）中。

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