基本信息:
- 专利标题： Method of performing a burn-in
- 专利标题（中）：用于进行老化处理方法
- 申请号：EP04005888.5 申请日：1995-11-15
- 公开(公告)号：EP1439397A3 公开(公告)日：2009-09-02
- 发明人： Khandros, Igor Y. , Mathieu, Gaetan L. , Eldridge, Benjamin N. , Grube, Gary W.
- 申请人： FormFactor, Inc.
- 申请人地址： 7005 Southfront Road Livermore, CA 94551 US
- 专利权人： FormFactor, Inc.
- 当前专利权人： FormFactor, Inc.
- 当前专利权人地址： 7005 Southfront Road Livermore, CA 94551 US
- 代理机构： Harris, Ian Richard
- 优先权： US340144 19941115; PCT/US94/13373 19941116; US452255 19950526; US457479 19950601; US526246 19950921; US533584 19951018; US554902 19951109; US558332 19951115
- 主分类号： G01R31/28
- IPC分类号： G01R31/28
摘要：
A method of burning-in semiconductor devices, comprising permanently mounting a plurality of resilient contact structures on a plurality of unsingulated semiconductor devices on a semiconductor wafer; powering up at least a portion of the unsingulated semiconductor devices by making pressure connections to the resilient contact structures on the portion of the unsingulated semiconductor devices; and heating the semiconductor devices to a temperature of at least 150° C for less than 60 minutes.
公开/授权文献:
- EP1439397A2 Method of performing a burn-in 公开/授权日：2004-07-21
IPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01R | 测量电变量；测量磁变量（通过转换成电变量对任何种类的物理变量进行测量参见G01类名下的 |
| ------G01R31/00 | 电性能的测试装置；电故障的探测装置；以所进行的测试在其他位置未提供为特征的电测试装置 |
| --------G01R31/28 | .电路的测试，例如用信号故障寻测器 |