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81. 发明公开

EP1000948A2 Copper containing substituted phenylethylene precursor and synthesis method 有权
标题翻译：含铜取代苯乙烯前体及合成方法
公开(公告)号：EP1000948A2
公开(公告)日：2000-05-17
申请号：EP99308237.9
申请日：1999-10-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Wei Wei , NGuyen, Tue , Charneski, Lawrence J. , Evans, David R. , Hsu, Sheng Teng
IPC分类号： C07F1/08 , C23C16/18
CPC分类号： C23C16/18
摘要： There is provided a Cu(hfac) precursor with a phenylethylene carrying substituents selected from H, C 1 to C 6 alkyl, C 1 to C 6 haloalkyl, phenyl and C 1 to C 6 alkoxyl. α-Methylstyrene is the preferred ligand and the precursor containing it has proved to be stable at low temperature and sufficiently volatile at higher temperatures. Copper deposited from this precursor has low resistivity to high adhesive characteristics.
摘要翻译：提供了具有选自H，C 1至C 6烷基，C 1至C 6卤代烷基，苯基和C 1至C 6烷氧基的取代基的苯乙烯的Cu（hfac）前体。 α-甲基苯乙烯是优选的配体，含有它的前体已被证明在低温下稳定并且在较高温度下具有足够的挥发性。由该前体沉积的铜具有低电阻率和高粘合特性。

82. 发明公开

EP0989203A1 Cu(hfac)TMVS precursor with water additive to increase the condcuctivity of Cu 审中-公开
标题翻译： Cu）的HFAC）TMVS前体具有水基添加剂以提高铜的导电
公开(公告)号：EP0989203A1
公开(公告)日：2000-03-29
申请号：EP99305698.5
申请日：1999-07-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Nguyen, Tue , Senzaki, Yoshihide , Kobayashi, Masato , Charneski, Lawrence J. , Hsu, Sheng Teng
IPC分类号： C23C16/18
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76838
摘要： A method of blending water vapor with volatile Cu(hfac)TMVS (copper hexafluoroacetylacetonate trimethylvinylsilane) is provided which improves the deposition rate of Cu, without degrading the resistivity of the Cu deposited upon an integrated circuit surface. The method uses a relatively small amount of water vapor, approximately 0.3 to 3% of the total pressure of the system which chemical vapor deposition (CVD) Cu is applied. The method specifies the flow rates of the liquid precursor, carrier gas, and liquid water. The method also specifies the pressures of the vaporized precursor, vaporized precursor blend including carrier gas and water vapor. In addition, the temperatures of the vaporizers, chamber walls, and IC surfaces are disclosed. A Cu precursor blend is also provided comprising vaporized Cu(hfac)TMVS and water vapor. The ratio of water vapor pressure to vaporized precursor is approximately 0.5 to 5%. Further, an IC surface covered with Cu applier with a Cu precursor blend including vaporized Cu(hfac)TMVS and water vapor, with the above mentioned ratio of water vapor pressure to volatile Cu(hfac)TMVS pressure, is provided.
摘要翻译：提供混合水蒸气有挥发性的Cu（HFAC）TMVS（铜hexafluoroacetylacetonates三甲基乙烯基硅烷）的方法，从而提高了Cu的沉积速率，不妨碍集成电路表面降低铜沉积的电阻率。该方法使用相对小的量的水蒸气，其中化学气相沉积（CVD）的Cu所应用的系统的总压力大约0.3至3％。该方法规定了液体前体，载气，和水的液体的流速。因此，该方法规定了蒸发的前体的压力，蒸发的前体共混物包含载气和水蒸汽。此外，蒸发器，室壁和IC表面的温度是游离缺失盘。因此，一个铜前体共混物，提供了包含汽化的Cu（HFAC）TMVS和水蒸汽。水蒸汽压力，以蒸发的前体的比率为大约0.5到5％。此外，易失性的Cu在IC表面覆盖有铜施放器具有Cu前体共混物包含汽化的Cu（HFAC）TMVS和水蒸汽，水蒸汽压力的至（HFAC）TMVS压力上述比率，提供了一种。

83. 发明公开

EP0987346A1 Copper deposition method using a precursor with (alkyloxy) (alkyl)silylolefin ligands 审中-公开
标题翻译： Verfahren zur Kupferabscheidung mittels einer（Alkyloxy）（Alkyl）Silylolefin-Liganden enthaltendenVorläuferverbindung
公开(公告)号：EP0987346A1
公开(公告)日：2000-03-22
申请号：EP99302806.7
申请日：1999-04-12
申请人： Sharp Kabushiki Kaisha , SHARP MICROELECTRONICS TECHNOLOGY, INC.
发明人： Senzaki, Yoshihide , Kobayashi, Masato , Charneski, Lawrence J. , Nguyen, Tue
IPC分类号： C23C16/18 , C07F7/18
CPC分类号： C23C16/18
摘要： Chemical vapor deposition (CVD) of copper (Cu) to integrated circuit substrates uses as Cu precursor a Cu(hfac)(ligand) including a silylolefin ligand including combinations of C1-C8 alkyl groups with at least one C2-C8 alkyloxy group, combinations of ethyl and ethoxy groups being preferred. The alkyloxy oxygens and the long carbon chains of the alkyl and alkyloxy groups increase precursor stability by contributing electrons to the Cu(hfac) complex to assist ligand separation from the complex at consistent temperatures. Selection of alkyloxy and alkyl groups enables precursor volatility to be adjusted to specific process scenarios.
摘要翻译：铜（Cu）到集成电路基板的化学气相沉积（CVD）用作Cu前体Cu（hfac）（配体），其包括含有C 1 -C 8烷基与至少一个C 2 -C 8烷氧基的组合的硅单元配体配体，组合的乙基和乙氧基是优选的。烷基和烷氧基的烷氧基氧和长碳链通过向Cu（hfac）络合物贡献电子来增加前体的稳定性，以辅助配体在一致的温度下与络合物分离。选择烷氧基和烷基可使前体挥发性调整到具体的工艺情况。

84. 发明公开

EP0975014A1 Enhanced CVD copper adhesion by two-step deposition process 审中-公开
标题翻译： Verbesserte CVD-Kupfer-Haftung durch Zwei-Schritt-Abscheidungsverfahren
公开(公告)号：EP0975014A1
公开(公告)日：2000-01-26
申请号：EP99305601.9
申请日：1999-07-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Nguyen, Tue , Charneski, Lawrence J. , Kobayashi, Masato
IPC分类号： H01L21/285 , C23C16/18
CPC分类号： H01L21/76877 , C23C16/0272 , C23C16/18
摘要： A method of enhancing copper adhesion to a substrate includes preparing a single-crystal silicon substrate (12); forming integrated circuit components (14 to 22) on active areas (10) of the substrate; metallizing the integrated circuit components, including metallizing a first copper layer (26) by low-rate CVD, and metallizing a second copper layer (28) by high-rate CVD; and finalizing construction of the structure.
摘要翻译：提高对衬底的铜粘附性的方法包括制备单晶硅衬底; 在基板的有源区上形成集成电路部件; 金属化集成电路部件，包括通过低速CVD金属化第一铜层，以及通过高速CVD金属化第二铜层; 并完成结构施工。

85. 发明授权

EP0787224B1 VERFAHREN ZUR ABSCHEIDUNG VON METALLSCHICHTEN 失效
标题翻译：用于金属层的分离
公开(公告)号：EP0787224B1
公开(公告)日：1998-09-16
申请号：EP95935818.5
申请日：1995-10-18
申请人： ATOTECH Deutschland GmbH
发明人： MEYER, Heinrich , SCHULZ, Ralf
IPC分类号： C23C18/30 , C23C16/18
CPC分类号： C23C16/18 , C23C18/30 , H05K3/388
摘要： The electronic industry makes use of polyimide substrates with copper coatings which are produced by the decomposition of metal organic compounds by means of a glow discharge process followed by the currentless metallisation of the metal film produced. When the first metal coating is separated, carbon-containing coatings are produced without the addition of oxygen which have low conductivity and little catalytic activity. If only alkaline metallising baths are used, adherent metal coatings are indeed initially deposited on the polyimide surfaces but the adhesion of the metal coating on the polyimide is seriously degraded on contact between the metal and aqueous alkaline solutions. If work is conducted in an oxygen atmosphere, palladium coatings are produced which must subsequently be reduced. Such coatings provide little or no adhesion if they are exposed to chemical or electrochemical process solutions. When mixtures of oxygen-containing compounds and inert gas are used in metal separation in the glow discharge, low-oxygen and carbon coatings are produced. In addition, the reduction in the adhesion on contact between the metallised substrate and aqueous-alkaline solutions can be avoided by the use of acid or neutral currentless metallising baths to produce the second metal coating. This process makes it possible for the first time to produce high-density circuit carriers from unmetallised polyimide foils.

86. 发明公开

EP0792383A1 TANTALUM AND NIOBIUM REAGENTS USEFUL IN CHEMICAL VAPOR DEPOSITION PROCESSES, AND PROCESS FOR DEPOSITING COATINGS USING THE SAME 失效
标题翻译：钽和NIOBREAGENZIEN心血管疾病和涂装工艺
公开(公告)号：EP0792383A1
公开(公告)日：1997-09-03
申请号：EP95932505.0
申请日：1995-09-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： KIRLIN, Peter S. , VAARTSTRA, Brian A. , GORDON, Douglas , GLASSMAN, Timothy E.
IPC分类号： C07F9 , C23C16
CPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/405
摘要： Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have the formula: M(OR1)x(R2-C(G)-CH-C(G)-R3)5-x wherein M is tantalum or niobium; G is oxygen or sulfur; and R?1, R2 and R3¿ are independently hydrocarbyl, fluoroalkyl or alkoxy groups. The niobium and tantalum reagent liquids in a reservoir (1) flow to a high precision liquid pump (3) through a valve (2). The pump then supplies the liquid solution to a hot vaporization zone (4) to flash vaporize the reagents. The gas-phase reagent then flows to a heated substrate (7) contained in a reactor (6) via a gas line (5) and is thermally decomposed to deposit an Nb- or Ta-containing coating on the substrate.

87. 发明授权

EP0670055B1 Method of deposition 失效
标题翻译： Dampfabscheidungsverfahren
公开(公告)号：EP0670055B1
公开(公告)日：1997-05-14
申请号：EP94900242.2
申请日：1993-11-19
申请人： THE UNIVERSITY OF DUNDEE, UNIVERSITY COURT
发明人： THOMSON, James , CAIRNS, James
IPC分类号： G03F7/004 , C23C16/18 , H01L21/285 , G03F1/08 , G03F7/16 , G03F7/20 , C07F1/12
CPC分类号： H01L21/283 , C07F1/00 , C23C16/18 , G03F1/76 , G03F7/0042 , G03F7/16 , G03F7/2043
摘要： There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g. a laser beam) or a particle beam (e.g. an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.
摘要翻译：描述了一种化学沉积物质的方法。该方法在集成电路的直接制造和用于集成电路生产中的光掩模的制造中是有用的。当施加辐射束（例如激光束）或粒子束（例如电子束）时，该方法包括使用降解成沉积物的化合物和残余物。残余物和任何未反应的化合物可以从其已经被施加到的基底上洗掉。可以实现沉积物的纳米级尺寸。特别合适的有机金属化合物是四仲丁基二氟化二氟。

88. 发明授权

EP0548990B1 Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method 失效
标题翻译：通过CVD来制造的沉积层的过程中，采用液体原料加合适的装置
公开(公告)号：EP0548990B1
公开(公告)日：1997-03-12
申请号：EP92122039.8
申请日：1992-12-28
申请人： CANON KABUSHIKI KAISHA
发明人： Asaba, Tetsuo, c/o Canon Kabushiki Kaisha , Makino, Kenji, c/o Canon Kabushiki Kaisha
IPC分类号： C23C16/44 , C23C16/18 , C23C16/20 , C23C16/40
CPC分类号： C23C16/402 , C23C16/18 , C23C16/4486

89. 发明公开

EP0734064A2 Material for forming wiring layer and wiring forming method 失效
标题翻译：资料来源Interkonnektionsschicht und Verfahren zur Herstellung dieser Interkonnektionsschicht
公开(公告)号：EP0734064A2
公开(公告)日：1996-09-25
申请号：EP96103790.0
申请日：1996-03-11
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kawaguchi, Akemi , Terai, Yuka , Yano, Kousaka
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/32051 , C23C16/18 , H01L21/76838 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A layer forming material is a compound which has a structure of six-membered ring coordinated to Cu and containing Si, and of which general formula is represented by the following chemical formula:
wherein X 1 and X 2 are elements of the VI group of the same or different types which are coordinate-bonded to Cu, and of which examples include O, S, Se, Te and the like, at least one of Y 1 , Y 2 and Y 3 is Si, L is a group which has a double or triple bond and which is able to supply electrons to Cu, and each of R 1 and R 2 is any of SiF 3 , SiH 3 , CF 3 and CH 3 for example.
摘要翻译：成层材料是具有与Cu配位并含有Si的六元环结构的化合物，其通式由以下化学式表示：其中X 1和X 2是VI基团的元素与Cu配位结合的相同或不同的类型，其实例包括O，S，Se，Te等，Y1，Y2和Y3中的至少一个为Si，L为具有双重或三键并且能够向Cu供应电子，并且R1和R2中的每一个例如是SiF 3，SiH 3，CF 3和CH 3中的任一个。

90. 发明公开

EP0712409A1 ORGANOMETALLIC COMPLEXES OF ALUMINIUM, GALLIUM AND INDIUM 无效
标题翻译：有机金属铝，镓和铟
公开(公告)号：EP0712409A1
公开(公告)日：1996-05-22
申请号：EP94922987.0
申请日：1994-08-02
申请人： THE ASSOCIATED OCTEL COMPANY LIMITED
发明人： WALLBRIDGE, Malcolm, George, Hugh , PHILLIPS, Paul Richard, 50 Lingwood , BLACKER, Nicholas Charles, 8 Tidworth Road , BARKER, James
IPC分类号： C07F5 , C23C16
CPC分类号： C07F5/066 , C07F5/00 , C23C16/18
摘要： Novel organometallic complexes of aluminium, gallium and indium are disclosed, having improved stability and volatility for use in CVD processes. These are donor ligand complexes of the formula MR2.L where M is the metal, R is an alkyl group and L is a ligand containing an amidine (R'N-^..B7-^..B7-^..B7C(R')-^..B7-^..B7-^..B7NR') group, where R' is H, alkyl etc.

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