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1. 发明公开

EP3367163A1 MASK PLATE AND MANUFACTURING METHOD THEREOF, METHOD USING MASK PLATE TO COMPOSE PATTERN, AND FILTER 审中-公开
公开(公告)号：EP3367163A1
公开(公告)日：2018-08-29
申请号：EP16805263.7
申请日：2016-07-08
申请人： BOE Technology Group Co., Ltd. , Beijing BOE Display Technology Co., Ltd.
发明人： ZHANG, Zhichao , KUO, Tsung Chieh , LIU, Zheng , WANG, Shoukun
IPC分类号： G03F1/00 , G03F7/00 , G02B5/20
CPC分类号： G03F1/22 , G02B5/201 , G02B5/208 , G02F1/13439 , G02F2001/13625 , G03F1/38 , G03F1/50 , G03F1/54 , G03F1/76 , G03F7/0007 , G03F7/0035 , G03F7/038 , G03F7/039 , G03F7/095 , G03F7/16 , G03F7/2004 , G03F7/2022 , G03F7/26 , G03F7/70283 , G03F7/70466 , G03F7/70575
摘要： A mask, a manufacturing method thereof, and a patterning method employing the mask. In the mask, a plurality of masks can be combined into one mask. The pattern area (01) of the mask is provided with a first pattern section (10) and a second pattern section (20) which are not overlapped with each other; light of a first wavelength can run through the first pattern section (10) but light of a second wavelength cannot run through the first pattern section; the light of the second wavelength can run thorough the second pattern section (20) but the light of the first wavelength cannot run through the second pattern section; and the light of the first wavelength and the light of the second wavelength can run through the non-pattem area, or any of the light of the first wavelength and the light of the second wavelength cannot run through the non-pattern area. The mask is obtained by combining a plurality of masks.

2. 发明公开

EP3127144A4 PHOTO-MASKS FOR LITHOGRAPHY 审中-公开
公开(公告)号：EP3127144A4
公开(公告)日：2018-02-28
申请号：EP15772966
申请日：2015-04-01
申请人： ZYGO CORP
发明人： TRICARD MARC
IPC分类号： H01L21/027
CPC分类号： G03F1/22 , G03F1/46 , G03F1/48 , G03F1/76 , G21K1/062 , G21K2201/067 , H05G2/001
摘要： A photo-mask for use in extreme ultraviolet (EUV) lithography, in which the photo-mask has low coefficient of thermal expansion and high specific stiffness.

3. 发明公开

EP2936249A1 PROCEDE DE FABRICATION DE MASQUE DE NANOLITHOGRAPHIE 审中-公开
标题翻译：工艺的制备纳米光刻掩模
公开(公告)号：EP2936249A1
公开(公告)日：2015-10-28
申请号：EP13818313.2
申请日：2013-12-16
申请人： Arkema France , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： NAVARRO, Christophe , ARGOUD, Maxime , CHEVALIER, Xavier , TIRON, Raluca , GHARBI, Ahmed
IPC分类号： G03F7/32 , C08L53/00 , G03F7/00
CPC分类号： G03F1/76 , B82Y30/00 , C08L53/00 , G03F1/00 , G03F7/0002 , G03F7/325 , H01L21/0274
摘要： The invention relates to a process for fabricating nanolithography masks from a film (20) of PS-b-PMMA block copolymer deposited on a surface (10) to be etched, said copolymer film comprising PMMA nanodomains (21) oriented perpendicularly to the surface to be etched, said process being characterised in that it comprises the following steps: irradiating (E1) part of said copolymer film in order to form a first irradiated zone and a second non-irradiated zone in said copolymer film, then treating (E2) said copolymer film in a developer solvent in order to remove, selectively, at least said PMMA nanodomains of said first irradiated zone of said copolymer film.

4. 发明公开

EP2666057A4 CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE COMPOSITION, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, PHOTOMASK AND POLYMER COMPOUND 有权转让
标题翻译：化学增强的涂料组合物，用该组合物漆膜涂油漆掩模坯料，形成了PAINT结构，光掩膜和高分子化合物的方法
公开(公告)号：EP2666057A4
公开(公告)日：2014-07-30
申请号：EP11856421
申请日：2011-12-22
申请人： FUJIFILM CORP
发明人： TSUCHIMURA TOMOTAKA , YATSUO TADATERU
IPC分类号： G03F7/038 , C08F12/24 , G03F7/039
CPC分类号： G03F7/0382 , C08F12/24 , C08F212/14 , C08F257/00 , C08K5/19 , C09D125/18 , G03F1/20 , G03F1/22 , G03F1/56 , G03F1/76 , G03F7/0397 , G03F7/20 , G03F7/2037 , G03F7/2039 , C08F212/32 , C08L25/18 , C08F2220/185 , C08F220/42

5. 发明授权

EP2018598B1 Backside immersion lithography 有权
标题翻译： Rückseitenimmersionslithographie
公开(公告)号：EP2018598B1
公开(公告)日：2009-07-29
申请号：EP07725222.9
申请日：2007-05-15
申请人： MICRONIC LASER SYSTEMS AB
发明人： LJUNGBLAD, Ulric , GUSTAFSSON, Per-Erik
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F1/54 , G03F1/76
摘要： The present disclosure relates to formation of latent images in a radiation sensitive layer applied to a substrate (210) that is transparent to or transmissive of radiation at the exposing wavelength. In particular, it relates to so-called backside lithography, in which the final lens (101) of an exposing system is positioned to project electromagnetic radiation through a first side of the transparent substrate (110) and expose a radiation sensitive layer (214) that overlays a second side of the transparent substrate that is opposite the first side. Five alternative embodiments for further treatment to form a radiation opaque layer corresponding to the latent image (the image or its inverse) are described. These methods and corresponding devices are useful for producing masks (sometimes called reticles), for producing latent images in semiconductor devices and for forming features of semiconductor devices using masks.
摘要翻译：本公开涉及在施加到对曝光波长的透射透射或透射辐射的衬底上的辐射敏感层中的潜像的形成。特别地，它涉及所谓的背面光刻，其中曝光系统的最终透镜被定位成将电磁辐射投射穿过透明基板的第一侧并且暴露覆盖透明基板的第二面的辐射敏感层这与第一面相反。描述了用于进一步处理以形成对应于潜像（辐射不透明层）的替代实施例（图像或其倒数）。这些方法和相应的装置可用于制造掩模（有时称为掩模版），用于在半导体器件中制造潜像并使用掩模形成半导体器件的特征。

6. 发明公开

EP1518150A2 METHOD OF USING AN AMORPHOUS CARBON LAYER FOR RETICLE FABRICATION 有权
标题翻译：一种用于生产光掩膜使用非晶碳层
公开(公告)号：EP1518150A2
公开(公告)日：2005-03-30
申请号：EP03742217.7
申请日：2003-06-25
申请人： ADVANCED MICRO DEVICES INC.
发明人： TABERY, Cyrus, E. , LYONS, Christopher, F.
IPC分类号： G03F1/08
CPC分类号： G03F1/54 , G03F1/76
摘要： A method of using an amorphous carbon layer (130) for improved reticle fabrication includes depositing a stack of layers including a substrate (110), an absorber (120), a transfer layer (130), an antireflective coating (ARC) layer (140), and a photoresist layer (150), patterning (45) the photoresist layer (150), and etching (55, 65) the ARC layer (140) and the transfer layer (130). The method also includes etching (75) the absorber layer(120) and removing (85) the transfer layer (130). The transfer layer (130) including amorphous carbon.

7. 发明公开

EP1410106A1 METHOD OF PREPARING OPTICALLY IMAGED HIGH PERFORMANCE PHOTOMASKS 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG VON OPTISCH BEBILDERTEN HOCHLEISTUNGSPHOTOMASKEN
公开(公告)号：EP1410106A1
公开(公告)日：2004-04-21
申请号：EP02747035.0
申请日：2002-07-16
申请人： Applied Materials, Inc.
发明人： FULLER, Scott , MONTGOMERY, Melvin, W. , ALBELO, Jeffrey, A. , BUXBAUM, Alex
IPC分类号： G03F1/08 , G03F7/09 , G03F7/16
CPC分类号： G03F7/168 , G03F1/46 , G03F1/50 , G03F1/76 , G03F7/091 , Y10S430/146 , Y10S430/151
摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
摘要翻译：本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。直写式连续波激光器优选在244nm或257nm的波长下工作。在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。

8. 发明公开

EP0627123A4 LASER GENERATED I.C. MASK. 失效
标题翻译：生成集成电路用激光口罩。
公开(公告)号：EP0627123A4
公开(公告)日：1995-11-22
申请号：EP92915747
申请日：1992-02-28
申请人： LASA IND INC
发明人： DOOLEY DANIEL J , ELSEA ARTHUR R JR
IPC分类号： G03F1/54 , G03F1/76 , G03F7/004 , G03F7/20 , H01L21/268
CPC分类号： G03F1/76 , G03F1/54 , G03F7/0043 , G03F7/2053
摘要： An improved method of making masks includes forming a layer of amorphous silicon (12) of about 2,000 angstroms on a transparent substrate (10). A laser beam (20) traverses the amorphous silicon to form a pattern of crystallized silicon (14). The n-crystallized silicon is etched leaving a patterned substrate. The patterned substrate is used as a mark for exposing photoresist on semiconductor elements.

9. 发明公开

EP0054315A2 Pattern generator 失效
标题翻译：生产口罩。
公开(公告)号：EP0054315A2
公开(公告)日：1982-06-23
申请号：EP81110558.4
申请日：1981-12-17
申请人： Hitachi, Ltd.
发明人： Hosaka, Sumio , Takanashi, Akihiro , Kurosaki, Toshiei , Kuniyoshi, Shinji , Kawamura, Yoshio , Terasawa, Tsuneo
IPC分类号： G03F7/26 , B23K26/08
CPC分类号： B23K26/0861 , B23K26/12 , B23K26/1224 , B23K26/123 , B41M5/24 , G03F1/76 , G03F7/704 , G03F7/70875 , H01L21/30
摘要： A pattern generator in which a workpiece (28) to be machined into a desired pattern shape is held in vacuum and is irradiated with a laser beam (24) condensed to be fine, whilst scanning the laser beam (24) so as to depict the desired pattern shape, whereby the workpiece (28) is directly machined in conformity with the desired pattern shape. As the workpiece (28), one in which a shading film (29) (for example, chromium film) is deposited on a transparent glass substrate (30) is employed, and it is irradiated with the laser beam (24) in the vacuum, whereby the irradiated parts of the shading film (29) are vaporized to fabricate a shading mask pattern of good quality.

10. 发明授权

EP0001030B1 Procédé de fabrication d'un masque selon une configuration donnée sur un support 失效
标题翻译：根据支持的图案制造面罩的过程
公开(公告)号：EP0001030B1
公开(公告)日：1982-05-19
申请号：EP78430002.2
申请日：1978-06-22
申请人： International Business Machines Corporation
发明人： Chang, Tai Hon Philip
IPC分类号： H01L21/00 , G03F7/02 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/76 , G03F7/095 , G03F7/2022 , H01J37/3174 , H01L21/0274 , H01L21/0277 , H01L21/0278 , Y10S430/143

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