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81. 发明公开

EP2053644A1 OXIDATION METHOD AND OXIDATION APPARATUS 审中-公开
标题翻译： OXIDIERUNGSVERFAHREN UND OXIDIERUNGSVORRICHTUNG
公开(公告)号：EP2053644A1
公开(公告)日：2009-04-29
申请号：EP08710732.2
申请日：2008-02-04
申请人： Canon Anelva Corporation
发明人： NAGAMINE, Yoshinori , WATANABE, Naoki
IPC分类号： H01L21/316 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08
摘要： An oxidizing method and oxidizing apparatus in which a plasma generating chamber having an oxidizing gas supply port and a substrate processing chamber having an exhaust port and internally having a substrate susceptor are connected via a partition having a number of through holes, a plasma of an oxidizing gas supplied into the plasma generating chamber is generated, and an oxide layer is formed on a substrate surface by supplying the generated active species onto a substrate are characterized in that the partition is connected to a power supply via a switching mechanism such that a positive, negative, or zero voltage is applied to the partition, and an oxidation process is performed by changing the ratio of radicals, positive ions, and negative ions in the active species supplied onto the substrate by switching the voltages at least once during the oxidation process.
摘要翻译：一种氧化方法和氧化装置，其中具有氧化气体供给口的等离子体产生室和具有排气口并且内部具有基板基座的基板处理室通过具有多个通孔的隔板连接，氧化的等离子体产生供应到等离子体产生室中的气体，并且通过将所产生的活性物质提供到衬底上而在衬底表面上形成氧化物层，其特征在于，隔板经由开关机构连接到电源，负电压或零电压施加到隔板上，并且通过在氧化工艺期间通过切换至少一次电压来改变提供给衬底上的活性物质中的自由基，正离子和负离子的比例来进行氧化过程。

82. 发明公开

EP2051282A2 Metal film production apparatus 审中-公开
标题翻译：金属薄膜生产设备
公开(公告)号：EP2051282A2
公开(公告)日：2009-04-22
申请号：EP08021946.2
申请日：2002-11-05
申请人： Canon Anelva Corporation
发明人： Matsuda, Ryuichi , Yahata, Naoki , Sakamoto, Hitoshi
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , C23C16/14 , C23C16/4488 , C23C16/455 , H01J2237/2001
摘要： A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
摘要翻译：源气体通过喷嘴供应到腔室中，并且电磁波从等离子体天线投射到腔室中。所产生的Cl2气体等离子体相对于等离子体天线中的电流的流动方向以不连续状态布置在基板和天花板构件之间对形成前驱体（CuxCly）的多个铜突起进行蚀刻反应。向被控制为比被蚀刻部件的温度低的温度的基板输送的前驱体（CuxCly）通过还原反应仅被转换为Cu离子，并被引导至基板，以在基板的表面上形成薄Cu膜。成膜速度快，成本明显下降，生成的铜薄膜质量高。

83. 发明公开

EP1674592A3 Thin film processing system with different processing chambers 审中-公开
标题翻译：与多家商会涂料厂
公开(公告)号：EP1674592A3
公开(公告)日：2009-04-22
申请号：EP05077982.6
申请日：2005-12-22
申请人： Canon Anelva Corporation
发明人： Sakai, Junro
IPC分类号： C23C16/455
CPC分类号： C23C16/45523 , C23C16/45551
摘要： A thin film processing system (10) alternately introducing two types of material gases into a reaction vessel unit so as to process the surface of a substrate, provided with a reaction vessel (10A) (first chamber) formed inside the reaction vessel unit and into which a first material gas is introduced, a reaction vessel (second chamber) formed inside the reaction vessel (10B) unit stacked over this and into which a second material gas is introduced, an opening formed in a wall between the two adjoining reaction vessels, a plurality of partition plates (12,13) moving back and forth between the two reaction vessels in a coordinated manner, one of which designed to close the opening and at least one of which carrying a substrate, and a material gas feed mechanism (24) and exhaust mechanism for supplying the first material gas and second material gas to the substrate parallel to the substrate surface in the two vessels.

84. 发明授权

EP1313127B1 Metal film production apparatus 有权
标题翻译：用于制造金属薄膜的装置
公开(公告)号：EP1313127B1
公开(公告)日：2009-02-11
申请号：EP02024599.9
申请日：2002-11-05
申请人： Canon Anelva Corporation
发明人： Matsuda, Ryuichi, Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, Mitsubishi Heavy Ind., Ltd. , Sakamoto, Hitoshi, Mitsubishi Heavy Ind., Ltd.
IPC分类号： H01J37/32 , C23C16/08 , C23C16/448 , C23C16/455
CPC分类号： H01J37/321 , C23C16/14 , C23C16/4488 , C23C16/455 , H01J2237/2001

85. 发明授权

EP3817517B1 PLASMA TREATMENT DEVICE, PLASMA TREATMENT METHOD, PROGRAM, AND MEMORY MEDIUM 有权
公开(公告)号：EP3817517B1
公开(公告)日：2024-08-14
申请号：EP18924031.0
申请日：2018-12-21
IPC分类号： H05H1/46 , C23C14/34 , H01L21/31 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32183 , H01J37/32541 , H01J37/32091 , H01J37/32532 , H01J37/3408 , H05H2242/2620210501 , C23C14/3464 , H01J37/32577 , H01J37/32715

86. 发明授权

EP4006951B1 X-RAY GENERATION DEVICE AND X-RAY IMAGING DEVICE 有权
公开(公告)号：EP4006951B1
公开(公告)日：2024-03-20
申请号：EP19944599.0
申请日：2019-09-03
发明人： KAWASE, Junya
IPC分类号： H01J35/16 , H01J35/08 , H05G1/06

87. 发明授权

EP3998467B1 IONIZATION VACUUM GAUGE AND CARTRIDGE 有权
公开(公告)号：EP3998467B1
公开(公告)日：2024-01-03
申请号：EP19945020.6
申请日：2019-09-13
发明人： KAWASAKI, Yohsuke
IPC分类号： G01L21/34 , H01J41/06

88. 发明授权

EP3073512B1 SUBSTRATE TREATMENT DEVICE AND METHODS 有权
公开(公告)号：EP3073512B1
公开(公告)日：2021-06-16
申请号：EP14862121.2
申请日：2014-10-21
发明人： KAJIHARA, Yuji
IPC分类号： H01L21/02 , C23C14/58 , H01L21/3065 , H01L21/687 , H01L21/683 , H01L21/67 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , H05B1/02 , F25B9/14

89. 发明授权

EP3648553B1 PLASMA TREATMENT DEVICE 有权
公开(公告)号：EP3648553B1
公开(公告)日：2021-05-19
申请号：EP18823378.7
申请日：2018-06-26
发明人： SEKIYA, Kazunari , TANABE, Masaharu , INOUE, Tadashi , SASAMOTO, Hiroshi , SATO, Tatsunori , TSUCHIYA, Nobuaki
IPC分类号： H01J37/32 , H01J37/34 , H05H1/46 , C23C14/34 , B01J19/08

90. 发明公开

EP3648554A1 PLASMA PROCESSING DEVICE 有权
公开(公告)号：EP3648554A1
公开(公告)日：2020-05-06
申请号：EP18824433.9
申请日：2018-06-26
申请人： Canon Anelva Corporation
发明人： TAKEDA, Atsushi , MORIWAKI, Takayuki , INOUE, Tadashi , TANABE, Masaharu , SEKIYA, Kazunari , SASAMOTO, Hiroshi , SATO, Tatsunori , TSUCHIYA, Nobuaki
IPC分类号： H05H1/46 , C23C14/34 , H01L21/3065
摘要： A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

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