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1. 发明公开

EP4449478A1 DEPOSITION OF SILICON NITRIDE WITH ENHANCED SELECTIVITY 失效
公开(公告)号：EP4449478A1
公开(公告)日：2024-10-23
申请号：EP22908277.1
申请日：2022-12-12
申请人： Entegris, Inc.
发明人： WANG, Han , HENDRIX, Bryan Clark , CONDO, Eric
IPC分类号： H01L21/02 , C23C16/04 , C23C16/34 , C23C16/455 , C23C16/56
CPC分类号： H01L21/02211 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01L21/32 , C23C16/02 , C23C16/345 , C23C16/45523 , C23C16/04 , C23C16/4554 , C23C16/505

2. 发明公开

EP4345189A3 SILICON NITRIDE FILMS WITH HIGH NITROGEN CONTENT 审中-实审
公开(公告)号：EP4345189A3
公开(公告)日：2024-06-26
申请号：EP24158662.7
申请日：2018-07-05
申请人： Applied Materials, Inc.
发明人： Basu, Atashi , Nemani, Srinivas D. , Yieh, Ellie
IPC分类号： H01L21/02 , C23C16/34 , C23C16/505 , C23C16/56 , C23C16/04 , C23C16/452 , C23C16/455
CPC分类号： C23C16/045 , C23C16/452 , C23C16/45523 , C23C16/505 , C23C16/56 , H01L21/02219 , C23C16/345 , H01L21/0217 , H01L21/02274 , H01L21/02222
摘要： Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and an ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

3. 发明公开

EP3412386A1 SURFACE-COATED CUTTING TOOL AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：EP3412386A1
公开(公告)日：2018-12-12
申请号：EP16819411.6
申请日：2016-06-22
申请人： Sumitomo Electric Hardmetal Corp.
发明人： PASEUTH, Anongsack , KANAOKA, Hideaki , ONO, Satoshi , IMAMURA, Shinya
IPC分类号： B23B27/14 , C23C16/34 , C23C16/36
CPC分类号： B23B27/148 , B23B51/0466 , B23C5/2217 , B23F21/005 , C23C16/34 , C23C16/36 , C23C16/45523 , C23C28/042 , C23C28/044 , C23C30/005
摘要： A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes a hard layer. The hard layer includes a plurality of crystal grains having a sodium chloride-type crystal structure. When the angle of intersection between the normal direction to (111) plane that is a crystal plane of the crystal grain and the normal direction to the surface of the base material is measured using an EBSD system for a cross section of the hard layer that is parallel to the normal direction of the surface of the base material, a proportion A of the crystal grains having the angle of intersection of 0 degree or more to less than 20 degrees is 50% or more. With respect to the boundaries of the crystal grains, the length of Σ3 grain boundaries is less than 50% of the length of Σ3-29 grain boundaries. The crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of Al x Ti 1-x and a second layer composed of nitride or carbonitride of Al y Ti 1-y are alternately stacked. The total thickness of the first layer and the second layer adjacent to each other is 3 nm or more and 40 nm or less.

4. 发明授权

EP1842941B1 METHOD FOR FORMING A GROUP III NITRIDE MATERIAL OR A SIC MATERIAL ON A SILICON SUBSTRATE 有权转让
公开(公告)号：EP1842941B1
公开(公告)日：2018-11-07
申请号：EP07104838.3
申请日：2007-03-23
申请人： IMEC VZW , Katholieke Universiteit Leuven (KUL)
发明人： Cheng, Kai , Leys, Maarten , Degroote, Stefan
IPC分类号： C30B25/02 , C30B29/40 , C30B29/36 , H01L21/36 , C23C16/02 , C23C16/30 , C23C16/32 , C30B25/18 , C23C16/455 , H01L21/02
CPC分类号： C30B29/403 , C23C16/0272 , C23C16/303 , C23C16/325 , C23C16/45523 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02381 , H01L21/02447 , H01L21/02488 , H01L21/02499 , H01L21/02529 , H01L21/0254 , H01L21/0262
摘要： The present invention relates to semiconductor process technology and devices. In particular, the present invention relates to a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0,01 µmol/cm 2 of one or more organometallic compounds containing Al, in a flow of less than 5 µmol/min. The invention is equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

5. 发明公开

EP3342511A4 COATED SURFACE CUTTING TOOL AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：EP3342511A4
公开(公告)日：2018-07-11
申请号：EP15882292
申请日：2015-08-28
申请人： SUMITOMO ELECTRIC HARDMETAL CORP
发明人： KANAOKA HIDEAKI , IMAMURA SHINYA , PASEUTH ANONGSACK , DETANI TAKANORI
IPC分类号： B23B27/14 , B23B51/00 , B23C5/20 , C23C16/02 , C23C16/40 , C23C28/04 , C23C30/00
CPC分类号： B23B27/148 , B23B2224/04 , B23B2224/28 , B23B2224/36 , B23B2228/04 , B23B2228/105 , B23C5/20 , B23C2224/04 , B23C2224/28 , B23C2224/36 , B23C2228/04 , B23C2228/10 , C23C16/029 , C23C16/403 , C23C16/45523
摘要： A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an ±-Al 2 O 3 layer (1). The ±-Al 2 O 3 layer (1) contains ±-Al 2 O 3 crystal grains and sulfur, and has a TC(006) of more than 5 in texture coefficient TC(hkl). The sulfur has a concentration distribution in which a concentration of the sulfur decreases in a direction away from a base-material-side surface of the ±-Al 2 O 3 layer, in a thickness direction of the ±-Al 2 O 3 layer.

6. 发明公开

EP3342511A1 COATED SURFACE CUTTING TOOL AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：EP3342511A1
公开(公告)日：2018-07-04
申请号：EP15882292.4
申请日：2015-08-28
申请人： Sumitomo Electric Hardmetal Corp.
发明人： KANAOKA, Hideaki , IMAMURA, Shinya , PASEUTH, Anongsack , DETANI, Takanori
IPC分类号： B23B27/14 , B23B51/00 , B23C5/20
CPC分类号： B23B27/148 , B23B2224/04 , B23B2224/28 , B23B2224/36 , B23B2228/04 , B23B2228/105 , B23C5/20 , B23C2224/04 , B23C2224/28 , B23C2224/36 , B23C2228/04 , B23C2228/10 , C23C16/029 , C23C16/403 , C23C16/45523
摘要： A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an α-Al 2 O 3 layer (1). The α-Al 2 O 3 layer (1) contains α-Al 2 O 3 crystal grains and sulfur, and has a TC(006) of more than 5 in texture coefficient TC(hkl). The sulfur has a concentration distribution in which a concentration of the sulfur decreases in a direction away from a base-material-side surface of the α-Al 2 O 3 layer, in a thickness direction of the α-Al 2 O 3 layer.

7. 发明授权

EP2231896B1 SEPARATE INJECTION OF REACTIVE SPECIES IN SELECTIVE FORMATION OF FILMS 有权转让
标题翻译：在膜的选择性形成中单独注射活性种
公开(公告)号：EP2231896B1
公开(公告)日：2017-12-27
申请号：EP08866712.6
申请日：2008-10-22
申请人： ASM America, Inc.
发明人： BAUER, Matthias
IPC分类号： C23C16/04 , C30B25/02 , C23C16/455 , C23C16/24
CPC分类号： C23C16/04 , C23C16/24 , C23C16/45514 , C23C16/45523 , C30B25/02 , C30B33/12 , C30B35/00

8. 发明公开

EP3127637A1 SURFACE-COATED CUTTING TOOL AND PRODUCTION METHOD THEREFOR 有权转让
标题翻译：奥地利维多利亚州立大学
公开(公告)号：EP3127637A1
公开(公告)日：2017-02-08
申请号：EP15768503.3
申请日：2015-03-26
申请人： Mitsubishi Materials Corporation
发明人： TATSUOKA, Sho , SATO, Kenichi , YAMAGUCHI, Kenji
IPC分类号： B23B27/14
CPC分类号： B23C5/16 , B23B2228/10 , B23C2228/10 , C23C16/34 , C23C16/36 , C23C16/45523 , C23C16/4581 , C23C28/042 , C23C28/044 , C23C28/42 , C23C28/44
摘要： A surface-coated cutting tool of the present invention includes: a cutting tool body; and a hard coating layer provided on a surface of the cutting tool body, in which the hard coating layer includes a complex nitride or carbonitride layer, which is expressed by a composition formula: (Ti 1-x Al x )(C y N 1-y ), the average content ratio X av g of Al and the average content ratio Y avg of C in the complex nitride or carbonitride layer satisfy 0.60 ≤ X avg ≤ 0.95 and 0 ≤ Y avg ≤ 0.005, provided that each of X avg and Y avg is in atomic ratio, the complex nitride or carbonitride layer includes crystal grains with a cubic structure, and in the crystal grains with the cubic structure, a composition of Ti and Al is periodically changed in a direction of the normal line to the surface of the cutting tool body.
摘要翻译：本发明的表面涂层切削工具包括：切削工具本体; 以及设置在切削工具主体的表面上的硬涂层，其中硬涂层包括复合氮化物或碳氮化物层，其由组成式（Ti 1-x Al x）（C y N 1）表示 -y），Al的平均含量比X av g和复合氮化物或碳氮化物层中C的平均含量比Y avg满足0.60‰×平均‰‰，0‰¤平均‰0.005，条件是 X avg和Y avg均为原子比，复合氮化物或碳氮化物层包括具有立方结构的晶粒，并且在具有立方结构的晶粒中，Ti和Al的组成在与切削工具主体表面的法线。

9. 发明公开

EP3117023A1 SYSTEM FOR AND METHOD OF FAST PULSE GAS DELIVERY 有权
标题翻译：系统VERFAHREN ZUR SCHNELLEN IMPULSGASZUFUHR
公开(公告)号：EP3117023A1
公开(公告)日：2017-01-18
申请号：EP15760881.1
申请日：2015-02-11
申请人： MKS Instruments, Inc.
发明人： DING, Junhua , L'BASSI, Michael , LEE, Tseng-Chung
IPC分类号： C23C16/455 , C23C16/52 , C23C16/448
CPC分类号： C23C16/52 , C23C16/45523 , C23C16/45561 , G05D7/0635
摘要： A system for delivering pulses of a desired mass of gas to a tool, comprising: a mass flow controller including flow sensor, a control valve and a dedicated controller configured and arranged to receive a recipe of a sequence of steps for opening and closing the control valve so as to deliver as sequence of gas pulses as a function of the recipe. The mass flow controller is configured and arranged so as to operate in either one of at least two modes: as a traditional mass flow controller (MFC) mode or in a pulse gas delivery (PGD) mode. Further, the mass flow controller includes an input configured to receive an input signal; an output configured to provide an output signal; a communication port configured to receive program instructions; memory configured and arranged to receive programming data determining the programmed configuration of the mass flow controller as either a digital or analog configuration; and a processor/controller for operating the mass flow controller in accordance with the programmed configuration.
摘要翻译：一种用于将期望质量的气体脉冲输送到工具的系统，包括：质量流量控制器，包括流量传感器，控制阀和专用控制器，其被配置和布置成接收用于打开和关闭控制的一系列步骤的配方阀，以便作为配方的函数递送气体脉冲序列。质量流量控制器被配置和布置成以至少两种模式中的任一种操作：作为传统质量流量控制器（MFC）模式或脉冲气体输送（PGD）模式。此外，质量流量控制器包括被配置为接收输入信号的输入; 被配置为提供输出信号的输出; 配置为接收程序指令的通信端口; 存储器被配置和布置成接收将质量流量控制器的编程配置确定为数字或模拟配置的编程数据; 以及用于根据编程配置操作质量流量控制器的处理器/控制器。

10. 发明公开

EP2982466A4 SURFACE-COATED CUTTING TOOL 有权转让
标题翻译： OBERFLÄCHENBESCHICHTETESSCHNEIDWERKZEUG
公开(公告)号：EP2982466A4
公开(公告)日：2016-11-30
申请号：EP14778479
申请日：2014-04-01
申请人： MITSUBISHI MATERIALS CORP
发明人： TATSUOKA SHO , YAMAGUCHI KENJI , OSADA AKIRA
IPC分类号： B23B27/14 , C23C16/30 , C23C16/34 , C23C16/36 , C23C16/40 , C23C16/455
CPC分类号： C23C16/34 , B23B27/148 , B23B2228/04 , B23B2228/105 , C23C16/36 , C23C16/45523
摘要： The hard coating layer includes at least a Ti and Al complex nitride or carbonitride layer, which is formed by a chemical vapor deposition method and has an average layer thickness of 1 to 20 µm, in a case where a composition of the complex nitride or carbonitride layer is expressed by a composition formula: (Ti 1-x Al x )(C y N 1-y ), a content ratio x and a content ratio y satisfy 0.60‰¤x‰¤0.95 and 0‰¤y‰¤0.005, respectively, provided that each of x and y is in atomic ratio, crystal grains constituting the complex nitride or carbonitride layer includes cubic phase crystal grains; and hexagonal phase crystal grains , an area ratio occupied by the cubic phase crystal grains is 30-80 % in a plane perpendicular to the surface of the cutting tool body, an average grain width W; and an average aspect ratio A of the crystal grains with the cubic grain structure are 0.05-1.0 µm; and 5 or less, respectively, and a periodic content ratio change of Ti and Al in the composition formula: (Ti 1-x Al x )(C y N 1- y) exists in each of the cubic phase crystal grains.
摘要翻译：在复合氮化物或碳氮化物的组成的情况下，硬涂层至少包括通过化学气相沉积法形成的平均层厚度为1至20μm的Ti和Al复合氮化物或碳氮化物层层由组成式表示：（Ti 1-x Al x）（C y N 1-y），含量比x和含量比y满足0.60‰¤x‰¤0.95和0‰‰‰0.005 分别为x和y为原子比，构成复合氮化物或碳氮化物层的晶粒包括立方相晶粒; 和六方相晶粒，立方相晶粒占据的面积比在垂直于切削工具主体表面的平面中为30-80％，平均晶粒宽度W; 并且具有立方晶粒结构的晶粒的平均长宽比A为0.05-1.0μm; 和5以下，组成式：（Ti 1-x Al x）（C y N 1-y）中的Ti和Al的周期含量比变化存在于每个立方晶相中。

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