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    • 2. 发明公开
    • Thin film processing system with different processing chambers
    • Beschichtungsanlage mit mehreren Kammern
    • EP1674592A2
    • 2006-06-28
    • EP05077982.6
    • 2005-12-22
    • Canon Anelva Corporation
    • Sakai, Junro
    • C23C16/455
    • C23C16/45523C23C16/45551
    • A thin film processing system (10) alternately introducing two types of material gases into a reaction vessel unit so as to process the surface of a substrate, provided with a reaction vessel (10A) (first chamber) formed inside the reaction vessel unit and into which a first material gas is introduced, a reaction vessel (second chamber) formed inside the reaction vessel (10B) unit stacked over this and into which a second material gas is introduced, an opening formed in a wall between the two adjoining reaction vessels, a plurality of partition plates (12,13) moving back and forth between the two reaction vessels in a coordinated manner, one of which designed to close the opening and at least one of which carrying a substrate, and a material gas feed mechanism (24) and exhaust mechanism for supplying the first material gas and second material gas to the substrate parallel to the substrate surface in the two vessels.
    • 薄膜处理系统(10)将两种类型的原料气体交替地引入到反应容器单元中,以处理形成在反应容器单元内部的反应容器(10A)(第一室)的基板的表面,并进入 引入第一材料气体的反应容器(第二室)形成在反应容器(10B)的内部,该反应容器(10B)单元堆叠在其上并且引入第二材料气体,形成在两个邻接的反应容器之间的壁中的开口, 多个分隔板(12,13)以协调的方式在两个反应容器之间来回移动,其中一个被设计成封闭开口,其中至少一个承载基板,以及材料气体供给机构(24 )和用于将第一原料气体和第二原料气体向平行于两个容器中的基板表面的基板供给的排气机构。