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1. 发明公开

EP2051282A3 Metal film production apparatus 审中-公开
标题翻译：用于制造金属薄膜的装置
公开(公告)号：EP2051282A3
公开(公告)日：2011-12-21
申请号：EP08021946.2
申请日：2002-11-05
申请人： Canon Anelva Corporation
发明人： Matsuda, Ryuichi , Yahata, Naoki , Sakamoto, Hitoshi
IPC分类号： H01J37/32 , C23C16/08 , C23C16/448 , C23C16/455 , C23C16/14
CPC分类号： H01J37/321 , C23C16/14 , C23C16/4488 , C23C16/455 , H01J2237/2001
摘要： A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

2. 发明公开

EP2051282A2 Metal film production apparatus 审中-公开
标题翻译：金属薄膜生产设备
公开(公告)号：EP2051282A2
公开(公告)日：2009-04-22
申请号：EP08021946.2
申请日：2002-11-05
申请人： Canon Anelva Corporation
发明人： Matsuda, Ryuichi , Yahata, Naoki , Sakamoto, Hitoshi
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , C23C16/14 , C23C16/4488 , C23C16/455 , H01J2237/2001
摘要： A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
摘要翻译：源气体通过喷嘴供应到腔室中，并且电磁波从等离子体天线投射到腔室中。所产生的Cl2气体等离子体相对于等离子体天线中的电流的流动方向以不连续状态布置在基板和天花板构件之间对形成前驱体（CuxCly）的多个铜突起进行蚀刻反应。向被控制为比被蚀刻部件的温度低的温度的基板输送的前驱体（CuxCly）通过还原反应仅被转换为Cu离子，并被引导至基板，以在基板的表面上形成薄Cu膜。成膜速度快，成本明显下降，生成的铜薄膜质量高。

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