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71. 发明授权

EP1589793B1 Plasma generation device 有权
标题翻译： Plasmaerzeugungseinrichtung
公开(公告)号：EP1589793B1
公开(公告)日：2014-06-04
申请号：EP04702413.8
申请日：2004-01-15
申请人： Japan Science and Technology Agency
发明人： SETSUHARA, Yuichi , SHOJI, Tatsuo , KAMAI, Masayoshi
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46

72. 发明授权

EP2392195B1 VORRICHTUNG ZUM MODIFIZIEREN DER OBERFLÄCHEN VON BAHN-, PLATTEN- UND BOGENWARE MIT EINER EINRICHTUNG ZUR ERZEUGUNG EINES PLASMAS 有权
标题翻译： DEVICE修改发达的铁路，板和拱洁具表面与设备产生等离子体
公开(公告)号：EP2392195B1
公开(公告)日：2014-05-07
申请号：EP10709952.5
申请日：2010-01-28
申请人： Ahlbrandt System GmbH
发明人： RAU, Alexander
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H05H1/2406 , H05H1/46 , H05H2001/2412 , H05H2001/4692 , H05H2001/481

73. 发明公开

EP2707598A1 PLASMA MICRO-THRUSTER 审中-公开
标题翻译：等离子微型推力器
公开(公告)号：EP2707598A1
公开(公告)日：2014-03-19
申请号：EP12781773.2
申请日：2012-05-12
申请人： Boswell, Roderick, William
发明人： Boswell, Roderick, William
IPC分类号： F03H1/00 , H05H1/46 , H01J27/16
CPC分类号： F03H1/00 , F03H1/0093 , H01J27/16 , H05H1/46 , H05H2001/4675 , H05H2001/469
摘要： A plasma micro-thruster, including: an elongate and substantially non-conductive tube having a first end to receive a supply of propellant gas, and an open second end to act as an exhaust; first, second, and third electrodes extending circumferentially around the tube and being mutually spaced along a longitudinal axis of the tube, the third electrode being longitudinally interposed between the first and second electrodes; wherein the tube and the first, second and third electrodes are configured to generate a plasma from propellant gas flowing though the tube from the first end of the tube when the third electrode receives radio frequency power and the first and second electrodes are electrically grounded relative to the third electrode, such that the expansion of the plasma from the open end of the tube generates a corresponding thrust.
摘要翻译：一种等离子体微推进器，包括：细长且基本上不导电的管，其具有接收推进剂气体供应的第一端和作为排气装置的敞开的第二端; 第一电极，第二电极和第三电极，所述第一电极，所述第二电极和所述第三电极围绕所述管周向延伸并且沿着所述管的纵向轴线相互间隔开，其中所述管和所述第一，第二和第三电极被配置为当所述第三电极接收射频功率并且所述第一和第二电极相对于所述第一电极电接地时从由所述管的第一端流过所述管的推进剂气体产生等离子体第三电极，使得来自管的开口端的等离子体的膨胀产生相应的推力。

74. 发明公开

EP2665347A1 REACTOR STRUCTURE AND PLASMA PROCESSING DEVICE 审中-公开
标题翻译： REAKTORSTRUKTUR UND PLASMAVERARBEITUNGSVORRICHTUNG
公开(公告)号：EP2665347A1
公开(公告)日：2013-11-20
申请号：EP12745389.2
申请日：2012-01-23
申请人： NGK Insulators, Ltd.
发明人： TERAZAWA Tatsuya , SHIONOYA Wataru
IPC分类号： H05H1/24 , B01J19/08
CPC分类号： H05H1/46 , H01J37/32532 , H01J37/32568 , H05H2001/4682
摘要： A reactor structure in which disturbances in a waveform of a pulse voltage are suppressed is provided. A passage formation, a transformer, an anode bar, a cathode plate, an anode side feeding path and a cathode side feeding path are housed in an housing space formed in a housing. An extending direction of the anode bar is nonparallel with an extending direction of the cathode plate. The anode bar and the cathode plate cross the passage. The anode bar and the cathode plate are provided apart from each other in an extending direction of the passage. A distance from a negative output terminal of a secondary winding of the transformer to a feeding terminal of the cathode plate is longer than a distance from a positive output terminal of the secondary winding to a feeding terminal of the anode. The anode side feeding path electrically connects the feeding terminal of the anode bar to the positive output terminal of the secondary winding. The cathode side feeding path electrically connects the feeding terminal of the cathode plate to the negative output terminal of the secondary winding. A path length of the cathode side feeding path is longer than a path length of the anode side feeding path. The housing is formed by an electric conductor and is electrically connected to the cathode side feeding path. The housing may be electrically connected to the anode side feeding path with reversing a relationship between the distance and the path length.
摘要翻译：提供其中抑制脉冲电压的波形中的干扰的电抗器结构。通道形成，变压器，阳极棒，阴极板，阳极侧馈电路径和阴极侧馈电路径容纳在形成在壳体中的容纳空间中。阳极棒的延伸方向与阴极板的延伸方向不平行。阳极棒和阴极板穿过通道。阳极棒和阴极板在通道的延伸方向上彼此分开设置。从变压器的次级绕组的负输出端子到阴极板的馈电端子的距离比从次级绕组的正输出端子到阳极的馈电端子的距离长。阳极侧馈电路径将阳极棒的馈电端子电连接到次级绕组的正输出端子。阴极侧馈电路径将阴极板的馈电端子与次级绕组的负极输出端子电连接。阴极侧供电路径的路径长度比阳极侧供电路径的路径长度长。壳体由电导体形成并且电连接到阴极侧馈电路径。壳体可以通过反转距离和路径长度之间的关系而电连接到阳极侧馈送路径。

75. 发明公开

EP2653586A1 PLASMA CVD APPARATUS 有权
标题翻译： PLASMA-CVD-VORRICHTUNG
公开(公告)号：EP2653586A1
公开(公告)日：2013-10-23
申请号：EP11848774.3
申请日：2011-11-25
申请人： Kabushiki Kaisha Kobe Seiko Sho
发明人： TAMAGAKI, Hiroshi , OKIMOTO, Tadao
IPC分类号： C23C16/503 , C23C16/54 , H05H1/46
CPC分类号： C23C16/50 , C23C16/4588 , C23C16/503 , C23C16/54 , H01J37/32018 , H01J37/32568 , H01J37/32669 , H01J37/32752 , H01J37/32761 , H01J37/3277 , H01J2237/3321 , H05H1/46 , H05H2245/123
摘要： A plasma CVD apparatus according to the present invention is provided with: a vacuum chamber 4; a pair of deposition rollers 2, 2, each of which is disposed in the vacuum chamber 4, and has a substrate W wound thereon, the substrate on which a coating is deposited; and magnetic field generating sections 8, 15, each of which forms a deposition area where the coating is deposited on the substrate W wound on each deposition roller 2 by generating a magnetic field that generates plasma on the surface of each deposition roller 2. The pair of deposition rollers 2, 2 are composed of a first deposition roller 2, and a second deposition roller 2, which is disposed at an interval from the first deposition roller 2 such that the shaft core of the second deposition roller is parallel to that of the first deposition roller 2. The magnetic field generating sections 8, 15 are disposed such that a first deposition area 19, as the deposition area, is formed in a space 3 between the pair of deposition rollers 2, 2, and that a second deposition area 20 is formed in a region adjacent to the surface of the deposition roller 2 and other than the space 3.
摘要翻译：根据本发明的等离子体CVD装置具有：真空室4; 一对沉积辊2,2，其分别设置在真空室4中，并具有卷绕在其上的基板W，沉积有涂层的基板; 以及磁场产生部分8,15，每个磁场产生部分通过在每个沉积辊2的表面上产生产生等离子体的磁场形成沉积区域，其中涂层沉积在卷绕在每个沉积辊2上的基板W上。的沉积辊2,2由第一沉积辊2和第二沉积辊2组成，第二沉积辊2与第一沉积辊2间隔设置，使得第二沉积辊的轴芯平行于第一沉积辊2.磁场产生部分8,15被布置成使得作为沉积区域的第一沉积区域19形成在一对沉积辊2,2之间的空间3中，并且第二沉积区域 20形成在与沉积辊2的表面相邻的区域中，而不是空间3。

76. 发明公开

EP2641455A1 MIKROWELLEN-ICP-RESONATOR 有权
标题翻译：微波ICP谐振器
公开(公告)号：EP2641455A1
公开(公告)日：2013-09-25
申请号：EP11793690.6
申请日：2011-11-15
申请人： Forschungsverbund Berlin E.V.
发明人： GESCHE, Roland , PORTEANU, Horia-Eugen , KÜHN, Silvio
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32247
摘要： A microwave resonator for inductively generating a plasma (5) is introduced. The microwave resonator comprises a first tube (4) and a conductive, preferably metal, plate (1). The tube (4) is designed for connection to a supply device for a process gas and for conveying the process gas and comprises a dielectric material. The conductive plate (1) has a first, preferably cylindrical, hole (2), which extends from a first opening on a first side of the conductive plate (1) to a second opening on a second side, opposite the first side, of the conductive plate (1). The first tube (4) is arranged in the first hole (2). The conductive plate (1) also has a first slit (3), which is open towards the first and the second side of the conductive plate (1) and towards the first hole (2). The invention also introduces a plasma generator with such a microwave resonator.

77. 发明授权

EP2139302B1 HIGH-VOLTAGE PLASMA PRODUCING APPARATUS 有权
标题翻译：高压等离子体产生装置
公开(公告)号：EP2139302B1
公开(公告)日：2013-09-25
申请号：EP08738986.2
申请日：2008-03-27
申请人： Mitsui Engineering & Shipbuilding Co., Ltd.
发明人： KIMURA, Noriaki
IPC分类号： H05H1/24 , F01N3/08 , H05H1/00 , H05H1/46 , H03H7/40 , F01N3/20
CPC分类号： H05H1/46 , F01N3/0892 , F01N3/20 , F01N2240/28 , H05H2001/4682 , H05H2245/1215

78. 发明公开

EP2615889A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：EP2615889A1
公开(公告)日：2013-07-17
申请号：EP11823665.2
申请日：2011-09-09
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205 , H01L21/3065
CPC分类号： H05H1/46 , C23C16/507 , H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32477 , H05H2001/4667
摘要： The present invention provides a plasma processing device which can generate plasma with a higher density than that in an external antenna type, and can prevent the impurities from being mixed into an object to be processed and can prevent particles from being generated, which are problems that occur in an internal antenna type. The plasma processing device according to the present invention has: a metallic vacuum chamber 11; an antenna-placing section 14 in which a radio-frequency antenna 18 is placed inside a through-hole (hollow space) provided in an upper wall 112 of the vacuum chamber 11; and a dielectric separating plate 15 covering the entire inner surface 1121 of the upper wall 112. In this plasma processing device, the entire inner surface 1121 side of the upper wall 112 is covered with the separating plate 15 so that surfaces in different level otherwise formed when a smaller separating plate is used is not formed between the inner surface 1121 and the separating plate 15. Therefore, the generation of particles caused by the formation of adhered materials on the surfaces in different level is prevented.
摘要翻译：本发明提供一种等离子体处理装置，其能够生成比外部天线型的等离子体的密度更高的等离子体，并且能够防止杂质混入到被处理物中，能够防止产生粒子，发生在内部天线类型中。根据本发明的等离子体处理装置具有：金属真空室11; 天线放置部分14，其中高频天线18放置在设置在真空室11的上壁112中的通孔（中空空间）内; 以及覆盖上壁112的整个内表面1121的电介质分离板15.在该等离子体处理装置中，上壁112的整个内表面1121侧被分离板15覆盖，使得不同水平面当在内表面1121和分隔板15之间不使用较小的分隔板时，因此防止了由于在不同水平面上形成粘附材料而产生的颗粒的产生。

79. 发明公开

EP2565903A3 Plasma generator 有权
标题翻译：等离子发生器
公开(公告)号：EP2565903A3
公开(公告)日：2013-07-10
申请号：EP12195030.7
申请日：2004-01-15
申请人： Japan Science and Technology Agency
发明人： Setsuhara, Yuichi , Shoji, Tatsuo , Kamai, Masayoshi
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46
摘要： A plasma generation device of the present invention, comprising: a vacuum chamber (6) for generating a plasma; at least one antenna conductor (1a) provided in the vacuum chamber (6) so as to generate an inductive electric field when high frequency power is applied; and a first insulator (12a) disposed around a portion of the antenna conductor (1a) which portion exists in the vacuum chamber (6), wherein the plasma and the antenna conductor (1a) are prevented from being in contact with each other by a first space region (18a) intervening between the first insulator (12a) and the portion; and a second insulator (12b) is disposed around the first insulator (12a) so that a second space region (18b) intervenes between the first insulator (12a) and the second insulator (12b).
摘要翻译：本发明的等离子体产生装置包括：用于产生等离子体的真空室（6）至少一个设置在真空室（6）中的天线导体（1a），以便当施加高频电力时产生感应电场; 和设置在真空室（6）中存在的天线导体（1a）的一部分周围的第一绝缘体（12a），其中等离子体和天线导体（1a）被防止彼此接触介于所述第一绝缘体（12a）和所述部分之间的第一空间区域（18a）和第二绝缘体（12b）围绕第一绝缘体（12a）设置，使得第二空间区域（18b）介于第一绝缘体（12a）和第二绝缘体（12b）之间。

80. 发明公开

EP2550379A2 DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE 审中-公开
标题翻译：电介质沉积使用远程等离子体源
公开(公告)号：EP2550379A2
公开(公告)日：2013-01-30
申请号：EP11760073.4
申请日：2011-03-22
申请人： Applied Materials, Inc.
发明人： HOFMANN, Ralf , FOAD, Majeed, A.
IPC分类号： C23C14/34 , C23C14/50 , C23C14/35
CPC分类号： C23C14/3407 , C23C14/0036 , C23C14/06 , C23C14/354 , H01J37/32357 , H01J37/34 , H05H1/46 , H05H2001/4667
摘要： A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.

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