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71. 发明公开

EP0422748A2 Method for planarizing an integrated structure 失效
标题翻译：平面图IC-Struktur方法。
公开(公告)号：EP0422748A2
公开(公告)日：1991-04-17
申请号：EP90203418.0
申请日：1989-10-24
申请人： APPLIED MATERIALS, INC.
发明人： Marks, Jeffrey , Law, Kam Shing , Wang, David Nin-Kou , Maydan, Dan
IPC分类号： H01L21/311 , H01L21/314 , H01L21/316
CPC分类号： H01L21/76819 , H01L21/31055 , H01L21/31604
摘要： A planarizing process as disclosed for planarizing an integrated circuit structure (10) using a low melting inorganic planarizing material (30) which comprises depositing a low melting inorganic planarizing layer (3) such as a boron oxide glass over a layer of insulating material (20) such as an oxide of silicon and then dry etching the low melting inorganic planarizing layer (3) to planarize the structure. The method eliminates the need for separate coating, drying, and curing steps associated with the application of organic-based planarizing layers usually carried out outside of a vacuum apparatus. In a preferred embodiment, the deposition steps and the etching step are carried out without removing the integrated circuit structure from the vacuum apparatus. An additional etching step may be carried out after depositing the insulating layer (20) to remove any voids formed in the insulating layer (20).
摘要翻译：公开的用于使用低熔点无机平面化材料（30）平面化集成电路结构（10）的平面化方法，其包括在绝缘材料层（20）上沉积低熔点无机平面化层（3），例如氧化硼玻璃），然后干燥蚀刻低熔点无机平坦化层（3）以使结构平坦化。该方法消除了与通常在真空装置外进行的有机基平坦化层的应用相关的单独涂布，干燥和固化步骤的需要。在优选实施例中，沉积步骤和蚀刻步骤在不从真空装置中移除集成电路结构的情况下进行。在沉积绝缘层（20）以去除在绝缘层（20）中形成的任何空隙之后，可以执行另外的蚀刻步骤。

72. 发明公开

EP0339580A3 A vacuum processing reactor 失效
标题翻译：真空加工反应器
公开(公告)号：EP0339580A3
公开(公告)日：1990-11-22
申请号：EP89107484.1
申请日：1989-04-25
申请人： APPLIED MATERIALS INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/00 , C23F4/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

73. 发明公开

EP0272142A3 Magnetic field enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：EP0272142A3
公开(公告)日：1990-09-05
申请号：EP87311195.9
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

74. 发明公开

EP0179665A3 Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition 有权
标题翻译：用于增强等离子体辅助化学气相沉积的装置和方法
公开(公告)号：EP0179665A3
公开(公告)日：1989-02-08
申请号：EP85307699.0
申请日：1985-10-24
申请人： APPLIED MATERIALS, INC.
发明人： Foster, Robert , Wang, David Nin-Kou , Somekh, Sasson , Maydan, Dan
IPC分类号： C23C16/50 , H01J37/32
CPC分类号： H01J37/32623 , C23C16/045 , C23C16/4558 , C23C16/509 , C23C16/517 , H01J37/3266 , H01J37/32935 , H01J2237/3327
摘要： A plasma CVD reactor (30) and associated process use tnagnetic field (B) enhancement (54-55) to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films (5). The reactor and process are designed for automated, high-throughput, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.

75. 发明公开

EP0272143A2 Bromine and iodine etch process for silicon and silicides 失效
标题翻译：溴和碘 - ÄtzverfahrenfürSilizium und Silizide。
公开(公告)号：EP0272143A2
公开(公告)日：1988-06-22
申请号：EP87311196.7
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Wong, Jerry Yuen Kui , Chang, Mei , Maydan, Dan , Wang, David Nin-Kou , Mak, Alfred W. S.
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/76232
摘要： A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.
摘要翻译：公开了使用碘酸盐或溴化物气体化学法蚀刻单晶硅，多晶硅，硅化物和聚硅化物的方法。碘酸盐/溴酸盐气体化学蚀刻具有非常高的纵横比和良好轮廓控制的窄深沟槽（10），并且没有黑色硅形成或其他不期望的现象。

76. 发明公开

EP1124257A3 Phosphorous doped copper film 审中-公开
标题翻译：掺杂磷的铜层
公开(公告)号：EP1124257A3
公开(公告)日：2003-08-27
申请号：EP01102783.6
申请日：2001-02-09
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Sinha, Ashok
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873
摘要： The present invention generally provides a method and an apparatus for forming a doped metal film on a conductive substrate. In one aspect of the invention, the deposition process comprises first depositing a phosphorous doped seed layer on a conductive substrate, and then depositing a conductive metal layer on the phosphorous doped seed layer to form a conductive film. In another aspect, the invention provides a method of processing a substrate (612) including depositing a dielectric layer (614) on a substrate (612), etching a feature (616) into the substrate (612), depositing a conductive layer (618) in the feature (616), depositing a phosphorous doped seed layer (619) on the conductive barrier layer (618), and depositing a conductive metal layer (620) on the phosphorous doped seed layer (619). In another aspect of the invention, an apparatus is provided that includes a phosphorous doped anode used for depositing a phosphorous doped metal film, such as a seed layer, in an electrochemical deposition process.

77. 发明公开

EP1170402A1 Coated anode system 审中-公开
标题翻译： Beschichtetes Anodensystem
公开(公告)号：EP1170402A1
公开(公告)日：2002-01-09
申请号：EP01116055.3
申请日：2001-07-02
申请人： Applied Materials, Inc.
发明人： Maydan, Dan
IPC分类号： C25D17/10 , C25D7/12
CPC分类号： C25D7/123 , C25D17/001 , C25D17/10
摘要： An anode is configured to be used within a metal film plating apparatus. The anode has a substantially planar electric field generating portion and an electrolyte solution chemical reaction portion. The planar electric field generating portion is coated with an inert material that is impervious to the electrolyte solution. In one embodiment, the anode is formed as a perforated anode. In one aspect, the electric field generating portion is formed contiguous with the electrolyte solution chemical reaction portion. In another aspects, the planar electric field generating portion is formed as a distinct member from the electrolyte solution chemical reaction portion.
摘要翻译：阳极构造成用于金属镀膜设备中。阳极具有大致平面的电场产生部分和电解质溶液化学反应部分。平面电场产生部分涂覆有不透电解质溶液的惰性材料。在一个实施例中，阳极形成为穿孔阳极。一方面，电场产生部分与电解质溶液化学反应部分相连。在另一方面，平面电场产生部分形成为与电解质溶液化学反应部分不同的部件。

78. 发明公开

EP1124257A2 Phosphorous doped copper film 审中-公开
标题翻译：米色磷光体Kupferschicht
公开(公告)号：EP1124257A2
公开(公告)日：2001-08-16
申请号：EP01102783.6
申请日：2001-02-09
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Sinha, Ashok
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873
摘要： The present invention generally provides a method and an apparatus for forming a doped metal film on a conductive substrate. In one aspect of the invention, the deposition process comprises first depositing a phosphorous doped seed layer on a conductive substrate, and then depositing a conductive metal layer on the phosphorous doped seed layer to form a conductive film. In another aspect, the invention provides a method of processing a substrate (612) including depositing a dielectric layer (614) on a substrate (612), etching a feature (616) into the substrate (612), depositing a conductive layer (618) in the feature (616), depositing a phosphorous doped seed layer (619) on the conductive barrier layer (618), and depositing a conductive metal layer (620) on the phosphorous doped seed layer (619). In another aspect of the invention, an apparatus is provided that includes a phosphorous doped anode used for depositing a phosphorous doped metal film, such as a seed layer, in an electrochemical deposition process. The phosphorous doped anode preferably includes an enclosure providing for flow of an electrolyte therethrough, a phosphorous doped metal disposed within the enclosure, and an electrode disposed through the enclosure and in electrical connection with the phosphorous doped metal. Another aspect of the invention provides an apparatus for electrochemical deposition of a phosphorous doped metal onto a substrate includes a substrate holder adapted to hold the substrate in a position where the substrate plating surface is exposed to an electrolyte in an electrolyte container, a cathode electrically contacting the substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive the substrate plating surface, and a phosphorous doped anode electrically connected to the electrolyte.
摘要翻译：本发明通常提供一种在导电基底上形成掺杂金属膜的方法和装置。在本发明的一个方面，沉积工艺包括首先在导电衬底上沉积磷掺杂种子层，然后在磷掺杂种子层上沉积导电金属层以形成导电膜。另一方面，本发明提供一种处理衬底（612）的方法，包括在衬底（612）上沉积介电层（614），将特征（616）蚀刻到衬底（612）中，沉积导电层），在所述导电阻挡层（618）上沉积磷掺杂种子层（619），以及在所述磷掺杂种子层（619）上沉积导电金属层（620）。在本发明的另一方面，提供一种装置，其包括用于在电化学沉积工艺中沉积磷掺杂金属膜例如种子层的磷掺杂阳极。磷掺杂阳极优选地包括提供电解质通过其中的外壳，设置在外壳内的磷掺杂金属和通过外壳设置并与磷掺杂金属电连接的电极。本发明的另一方面提供了一种用于将磷掺杂金属电化学沉积到衬底上的装置，包括：衬底保持器，其适于将衬底保持在电镀液容器内的基底镀层表面暴露于电解质的位置，阴极电接触基板电镀表面，具有电解质入口的电解质容器，电解液出口和适于接收基板电镀表面的开口，以及与电解质电连接的磷掺杂阳极。

79. 发明授权

EP0702392B1 Plasma reactor 失效
标题翻译：等离子体反应器
公开(公告)号：EP0702392B1
公开(公告)日：2000-10-04
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449

80. 发明授权

EP0630989B1 Method of plasma chemical vapor deposition of layer with improved interface 失效
标题翻译：从气相中对层的等离子体增强化学气相沉积的方法，以提高界面
公开(公告)号：EP0630989B1
公开(公告)日：2000-01-12
申请号：EP94109547.3
申请日：1994-06-21
申请人： APPLIED MATERIALS, INC.
发明人： Robertson, Robert , Kollrack, Marc Michael , Lee, Angela T. , Takehara, Takako , Feng, Guofu Jeff , Connolly, Robert , Law, Kam , Maydan, Dan
IPC分类号： C23C16/44 , C23C16/50 , C23C16/02 , B05D3/06 , B05D3/04
CPC分类号： C23C16/509 , C23C16/0245

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