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61. 发明授权

EP0499921B1 Current control device, particularly for power circuits in MOS technology 失效
标题翻译：特别是用于在MOS技术的电源电路的电流控制装置
公开(公告)号：EP0499921B1
公开(公告)日：1997-07-09
申请号：EP92102150.7
申请日：1992-02-10
申请人： SGS-THOMSON MICROELECTRONICS s.r.l.
发明人： Colandrea, Francesco , Poletto, Vanni
IPC分类号： H03K17/08 , H03K17/082 , H03K17/16 , G05F1/56
CPC分类号： H03K17/0822 , G05F1/575 , H03K17/165

62. 发明公开

EP0687056A3 Gate drive circuit for power switching device 失效
标题翻译：用于电力开关设备的栅极驱动电路
公开(公告)号：EP0687056A3
公开(公告)日：1997-04-16
申请号：EP95303797.5
申请日：1995-06-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kawakami, Kazuto, c/o Intel.Prop.Div. Toshiba Cor.
IPC分类号： H02M1/08 , H03K17/08
CPC分类号： H02M1/08 , H03K17/165 , H03K17/168 , Y10T307/766 , Y10T307/826
摘要： A gate drive circuit for a voltage-driven type power switching device, including a control device for generating a gate voltage for the voltage-driven type power switching device, and a correction device connected to the control device for receiving the gate voltage and for correcting an effect of a magnetic flux resulted from a main circuit current flowing in the voltage-driven type power switching device applied to the gate voltage to generate a corrected gate voltage. The corrected gate voltage is applied to a gate of the voltage-driven type power switching device.

63. 发明授权

EP0581110B1 Schaltungsanordnung zum Abbauen von Überspannungen an Transistoren 失效
标题翻译：电路，用于晶体管的降解过量电压
公开(公告)号：EP0581110B1
公开(公告)日：1996-09-25
申请号：EP93111236.1
申请日：1993-07-13
申请人： Siemens Nixdorf Informationssysteme Aktiengesellschaft
发明人： Busch, Peter, Dipl.-Ing. (FH) , Sterzik, Willi, Dipl.-Ing. (FH)
IPC分类号： H03K17/08 , H03K17/16
CPC分类号： H03K17/165 , H03K17/0822

64. 发明授权

EP0540661B1 MINIATURIZED SWITCHING POWER SUPPLY HAVING UNIDIRECTIONAL SPIKE FILTER 失效
标题翻译：小型化的斩波单向峰值滤波器。
公开(公告)号：EP0540661B1
公开(公告)日：1995-11-08
申请号：EP91914856.9
申请日：1991-07-12
申请人： POWER TRENDS, INC
发明人： KAYSER, Kenneth, W. , VAN ANTWERP, Joel, C.
IPC分类号： H02M3/335 , H02M3/00 , H02M3/155 , H03K17/687 , H03K17/16
CPC分类号： H02M3/156 , H03K17/165 , H03K17/6877
摘要： A high frequency miniaturized switching power supply has a unidirectional spike filter (17) which removed spikes appearing on a feedback signal (53) before such feedback signal (53) is provided to a comparator (14) of the switching power supply. The spike filter (17) removes voltage spikes of one polarity without lengthening the reset time of the comparator (14) in response to a wavefront of the opposite polarity.

65. 发明公开

EP0346571A2 Solid state relay 失效
标题翻译： Festkörper驿站。
公开(公告)号：EP0346571A2
公开(公告)日：1989-12-20
申请号：EP89104238.4
申请日：1989-03-10
申请人： Hewlett-Packard Company
发明人： Walters, Michael D. , Pernyeszi, Joseph , Petrilla, John F.
IPC分类号： H03K17/78 , H03K17/687
CPC分类号： H03K17/6874 , H03K17/04206 , H03K17/162 , H03K17/165 , H03K17/785
摘要： A solid state relay uses an optically controlled shunt (51) and series enhancement circuit (33,35) between a photodiode array (13) and an output device 15,17) to provide enhanced turn-off and transient immunity characteristics. A Faraday-shield may be used to cover optically active components and to provide protection against false turn-on and turn-off caused by the transients.
摘要翻译：固态继电器使用在光电二极管阵列（13）和输出装置15,17之间的光学控制分流器（51）和串联增强电路（33,35），以提供增强的关断和瞬时抗扰度特性。法拉第屏蔽可用于覆盖光学活性组分，并提供防止由瞬态引起的假开启和关闭的保护。

66. 发明公开

EP4354733A2 CIRCUIT FOR CONTROLLING THE SLEW RATE OF A TRANSISTOR 审中-实审
公开(公告)号：EP4354733A2
公开(公告)日：2024-04-17
申请号：EP23196216.8
申请日：2023-09-08
申请人： GlobalFoundries U.S. Inc.
发明人： Sharma, Santosh
IPC分类号： H03K17/16 , H03K17/687
CPC分类号： H03K17/162 , H03K17/165 , H03K17/163 , H03K17/168 , H03K17/6871 , H03K2017/687520130101
摘要： Disclosed are circuits for controlling slew rate of a transistor during switching. Each circuit includes a first transistor (e.g., a gallium nitride (GaN)-based high electron mobility transistor (HEMT) or metal-insulator-semiconductor HEMT (MISHEMT)), a capacitor, and a second transistor. The first transistor includes a first gate connected to a pad for receiving a pulse-width modulation (PWM) signal, a first drain region connected to a first plate of the capacitor, and a first source region. The second transistor includes a second gate connected to a second plate of the capacitor, a second drain region, and a second source region and is connected to both the pad and the first transistor. The connection between the first and second transistors varies depending on whether the first transistor is an enhancement or depletion mode device and on whether the slew rate control is employed for on state or off state switching.

67. 发明公开

EP3205021A4 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY 有权
公开(公告)号：EP3205021A4
公开(公告)日：2018-06-13
申请号：EP15848411
申请日：2015-10-09
申请人： EFFICIENT POWER CONVERSION CORP
发明人： DE ROOIJ MICHAEL A , STRYDOM JOHAN T , REUSCH DAVID C
IPC分类号： H03K17/687
CPC分类号： H03K17/567 , H03K17/04206 , H03K17/165 , H03K17/6871 , H03K19/017509 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081
摘要： An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

68. 发明公开

EP3280052A1 VERFAHREN UND VORRICHTUNG ZUR ANSTEUERUNG EINES SPANNUNGSGESTEUERTEN WIEDERABSCHALTBAREN LEISTUNGSHALBLEITERSCHALTERS 有权转让
标题翻译：用于控制电压控制的重新开关功率扫描器开关的方法和装置
公开(公告)号：EP3280052A1
公开(公告)日：2018-02-07
申请号：EP16182132.7
申请日：2016-08-01
申请人： GE Energy Power Conversion Technology Ltd
发明人： Geske, Martin
IPC分类号： H03K17/18 , H02M1/08
CPC分类号： H02M1/08 , H02M7/483 , H02M7/757 , H02M7/797 , H02M2001/0054 , H02M2007/4835 , H03K17/165 , H03K17/168 , H03K17/18 , Y02B70/1491
摘要： Es sind ein Verfahren und eine Vorrichtung zur Ansteuerung eines IGBTs oder eines MOSFETs oder eines sonstigen spannungsgesteuerten wiederabschaltbaren Leistungshalbleiterschalters (T), der einen ersten und einen zweiten Anschluss (C, E) sowie einen Steueranschluss (G) aufweist und der im eingeschalteten Zustand zwischen dem ersten und dem zweiten Anschluss (C, E) leitend ist, geschaffen. Zunächst wird eine erste Ansteuerspannung, die einen ersten Wert aufweist, an den Steueranschluss (G) angelegt, um den Leistungshalbleiterschalter (T) einzuschalten (S2). Anschließend werden Bedingungen erfasst, die den Fortgang eines Einschaltvorgangs des Leistungshalbleiterschalters (T) kennzeichnen (S3). Sobald Bedingungen erfasst sind, die dafür kennzeichnend sind, dass der Einschaltvorgang als abgeschlossen gilt (S4), wird eine zweite Ansteuerspannung, die einen zweiten Wert aufweist, der höher ist als der erste Wert, an den Steueranschluss (G) angelegt, um den Leistungshalbleiterschalter (T) im leitenden Zustand mit einer höheren Ansteuerspannung zu betreiben (S5), um dessen Leitverluste zu reduzieren.
摘要翻译：有一种方法和一种用于控制IGBT或MOSFET或其他电压控制wiederabschaltbaren功率半导体开关（T），具有第一和第二端子（C，d）和控制端子（G）的装置，并在之间的切换状态第一和第二端子（C，E）导电产生。首先，将具有第一值的第一驱动电压施加到控制端子（G）以导通功率半导体开关（T）（S2）。随后，检测指示（S3）上的通电开关（T）的进展的条件。一旦检测到的条件是被指示物，其在接通被认为是完成了（S4），具有第二值比第一值高，到控制端子（G）施加到功率半导体开关的第二驱动电压（T）以较高的驱动电压工作（S5）以降低其传导损耗。

69. 发明授权

EP1360763B1 INTEGRATED FET AND DRIVER 有权
标题翻译：集成FET和驱动器
公开(公告)号：EP1360763B1
公开(公告)日：2016-06-08
申请号：EP02715637.1
申请日：2002-01-25
申请人： NXP B.V.
发明人： WHEELER, Nicolas, J. , DE GROOT, Leonardus, A. , RUTTER, Philip
IPC分类号： H01L23/00 , H02M1/088 , H02M3/158 , H02M3/28 , H03K17/082 , H03K17/16 , H03K17/687 , H03K3/00
CPC分类号： H02M1/088 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48257 , H01L2224/4903 , H01L2224/49113 , H01L2924/00014 , H01L2924/1306 , H01L2924/13091 , H01L2924/30107 , H02M3/1588 , H02M3/28 , H03K17/0822 , H03K17/165 , H03K17/6871 , H03K2217/0036 , Y02B70/1466 , H01L2924/00 , H01L2224/45099 , H01L2224/05599

70. 发明公开

EP2899523A8 Circuit designs for induced transient immunity 有权转让
标题翻译：电路设计为感应瞬变免疫性
公开(公告)号：EP2899523A8
公开(公告)日：2016-03-16
申请号：EP14196145.8
申请日：2014-12-03
申请人： Sensata Technologies, Inc.
发明人： Wolf, Eric, A. , Corkum, David, L.
IPC分类号： G01L9/00 , G01L19/00
CPC分类号： H02H9/04 , G01L19/00 , H03K17/165
摘要： A circuit for protecting a voltage supply to a sensor from a transient event is provided. The circuit includes at least one buffer capacitor configured to provide output during the transient event, the output substantially equivalent to output of a regulated supply during normal operation of the sensor. A method of fabrication and a sensor are disclosed.

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