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61. 发明公开

EP1428912A2 Method of preparing a compound semiconductor crystal doped with carbon 有权
标题翻译：制备掺杂有碳的化合物半导体晶体的方法
公开(公告)号：EP1428912A2
公开(公告)日：2004-06-16
申请号：EP04003550.3
申请日：1998-03-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kawase, Tomohiro , Sawada, Shinichi , Tatsumi, Masami
IPC分类号： C30B29/42 , C30B27/00 , C30B11/12 , C30B11/00
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
摘要翻译：提供了制备化合物半导体晶体的方法，使化合物半导体晶体以高重现性掺杂有碳。该方法包括以下步骤：在不透气的气密容器中密封半导体原料和氧化硼基物质，并升高所述气密容器的温度以熔化所述气密容器中的所述原料和所述氧化硼基物质，从而形成来自所述原材料的熔融材料; 并降低所述气密容器的所述温度以固化所述熔融材料，由此使包含所得碳含量的所述化合物半导体晶体生长，选择碳氧化物气体的分压，并使所述碳氧化物气体与所述熔化材料共存，使得所述碳的所述所得含量取决于所述选定的所述碳氧化物气体的分压。利用该方法，还以高重复性制备碳浓度为0.1×1015cm-3至20×1015cm-3的化合物半导体晶体。

62. 发明公开

EP1358683A1 PROCEDE ET DISPOSITIF DE FABRICATION D'UN DETECTEUR ELECTRONIQUE EN GAAS POUR LA DETECTION DE RAYONS X POUR L'IMAGERIE 有权
标题翻译：的方法和设备用于制造GAAS DETECTOR FOR X射线检测和图片
公开(公告)号：EP1358683A1
公开(公告)日：2003-11-05
申请号：EP02701354.9
申请日：2002-01-30
申请人： UNIVERSITE PIERRE ET MARIE CURIE
发明人： BOURGOIN, Jacques
IPC分类号： H01L31/117 , H01L31/18 , C03B23/02
CPC分类号： H01L31/115 , C30B25/02 , C30B29/42
摘要： The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material (1) is placed on a substrate n?+ (or p+¿) (2). p?+ (or n+) ¿ions are then implanted on the external face (11) of the material (1) in order to form a p+/ i/n+ structure after annealing. Ohmic contacts (12) are subsequently disposed on the two faces and individual detectors (pixels) (13) are produced over the entire surface using means of dry or chemical masking and pickling. The epitaxial material (1) has a thickness d' that is sufficient to absorb effectively the X photons and means can be used to reduce the residual doping of said material (1). The material obtained in this way is suitable for medical (mammography, dental, etc.) and industrial imaging.

63. 发明授权

EP0990717B1 GaAs single crystal substrate and epitaxial wafer using the same 有权
标题翻译： GaAs单晶衬底和使用其的外延晶片
公开(公告)号：EP0990717B1
公开(公告)日：2003-03-26
申请号：EP99113143.4
申请日：1999-07-07
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hagi, Yoshiaki, c/o Itami Works of Sumitomo E.Ind. , Nakai, Ryusuke, c/o Itami Works of Sumitomo E.Ind.
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： H01L21/0262 , C30B11/00 , C30B29/42 , H01L21/02395 , H01L21/02463 , H01L21/02546 , Y10T428/265
摘要： A GaAs single crystal substrate and an epitaxial wafer using the same which suppress generation of slips when the epitaxial layer is grown and enable improvement of withstanding characteristic of devices can be obtained. A GaAs single crystal substrate has mean dislocation density in plane of at most 2 x 10 cm , carbon concentration of 2.5 to 20.0 x 10 cm , boron concentration of 2.0 to 20.0 x 10 cm , impurity concentration other than carbon and boron of at most 1 x 10 cm , EL2 concentration of 5.0 to 10.0 x 10 cm , resistivity of 1.0 to 5.0 x 10 OMEGA . cm and mean residual strain measured by photoelastic analysis of at most 1.0 x 10 .

64. 发明公开

EP1288342A2 Method of preparing group III-V compound semiconductor crystal 失效
标题翻译： Verfahren zur Herstellung eines III-V-Verbindungseinkristalles
公开(公告)号：EP1288342A2
公开(公告)日：2003-03-05
申请号：EP02026886.8
申请日：1997-04-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kawase, Tomohiro, Itami Works of Sumitomo , Tatsumi, Masami, Itami Works of Sumitomo
IPC分类号： C30B11/00 , C30B29/40 , C30B29/42
CPC分类号： C30B11/10 , C30B27/00 , C30B29/40 , C30B29/42
摘要： A carbon doped group III-V compound semiconductor crystal has a diameter of not less than 80mm wherein the concentration of doped carbon is not less than 0.8 x 10 15 cm -3 . Said semiconductor crystal is prepared by the steps of: filling a crucible or a boat with a pre-synthesized III-V compound raw material, and boron oxide, melting said III-V compound raw material and boron oxide, and solidifying a melted compound material.
摘要翻译：碳掺杂III-V族化合物半导体晶体的直径不小于80mm，其中掺杂碳的浓度不小于0.8×10 15 cm -3。所述半导体晶体是通过以下步骤制备的：用预合成的III-V化合物原料填充坩埚或舟皿，和氧化硼，熔化所述III-V族化合物原料和氧化硼，并使熔融的化合物材料。

65. 发明公开

EP1220305A1 CVD process 失效
标题翻译： CVD法
公开(公告)号：EP1220305A1
公开(公告)日：2002-07-03
申请号：EP02004974.8
申请日：1997-03-18
申请人： NIPPON SANSO CORPORATION
发明人： Arai, Takayuki , Hidaka, Junichi , Matsumoto, Koh , Akutsu, Nakao , Aoyama, Kazuhiro , Inaishi, Yoshiaki , Waki, Ichitaro
IPC分类号： H01L21/205 , C23C16/455 , C30B25/14 , C30B25/02
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45591 , C30B25/02 , C30B25/14 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/42
摘要： Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11. The CVD system contains two separators 18, 19 disposed in the reactor 11 on the upstream side of the substrate mounting section to be parallel to the surface of the substrate 11 so as to define in the reactor three parallel layers of passages consisting of a first passage 20, a second passage 21 and a third passage 22; a first CVD gas introducing pipe 22 communicating to the first passage 23; a second CVD gas introducing pipe 24 communicating to the second passage 21; and a deposition accelerating gas introducing pipe 25 communicating to the third passage 22.
摘要翻译：提供了可以生长具有最少缺陷并且具有高源气体利用效率和提高的生产率的两种或更多种组分的优异的化合物半导体薄膜的CVD系统和CVD方法。根据CVD系统和CVD工艺，将至少两种源气平行于放置在反应器10中的衬底11的表面引入，以在衬底的表面上生长两种或更多种组分的化合物半导体薄膜 CVD系统包含设置在反应器11中的两个分离器18,19，其位于衬底安装部分的上游侧，以平行于衬底11的表面，从而在反应器中限定三个平行的通道层，第一通道20，第二通道21和第三通道22; 与第一通道23连通的第一CVD气体导入管22; 与第二通道21连通的第二CVD气体导入管24; 以及与第三通道22连通的沉积加速气体导入管25

66. 发明公开

EP1147248A1 VORRICHTUNG ZUR HERSTELLUNG VON EINKRISTALLEN 有权
标题翻译：器具，用于产生单晶
公开(公告)号：EP1147248A1
公开(公告)日：2001-10-24
申请号：EP00922527.7
申请日：2000-03-16
申请人： Freiberger Compound Materials GmbH , FORSCHUNGSZENTRUM JÜLICH GMBH
发明人： SONNENBERG, Klaus , KÜSSEL, Eckhard , BÜNGER, Thomas , FLADE, Tilo , WEINERT, Berndt
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B29/40 , C30B11/003 , C30B29/42 , Y10T117/1068 , Y10T117/1076 , Y10T117/1088
摘要： The invention relates to a device for producing single crystals, for example gallium-arsenide single crystals having a large diameter. The device comprises a cylindrical heating system with a bottom heating element (2), a top heating element (3) and a jacket heating element (5). The heating surfaces of the bottom and top heating elements are significantly greater than the cross-sectional area of the single crystal to be produced. The reaction chamber further comprises an insulator (6) which is configured such that a radial heat flow is suppressed and a strictly axial heat flow over the full height of the reaction chamber is ensured between the top heating element (3) and the bottom heating element (2).

67. 发明公开

EP0971052A1 P-type GaAs single crystal and method for manufacturing the same 有权
标题翻译： P型GaAs-Einkristall和Verfahren zu seiner Herstellung
公开(公告)号：EP0971052A1
公开(公告)日：2000-01-12
申请号：EP99305407.1
申请日：1999-07-07
申请人： MITSUBISHI CHEMICAL CORPORATION
发明人： Fujisawa, Hideo c/o Mitsubishi Chemical Corp. , Katano, Kizuku c/o Mitsubishi Chemical Corp. , Yamamoto, Osamu c/o Mitsubishi Chemical Corp.
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B11/00 , C30B29/42
摘要： Disclosed are a P-type GaAs single crystal having an average dislocation density of 500 cm -2 or lower, and a manufacturing method therefor. The P-type GaAs single crystal is characterized by containing, as dopants, Si at an atomic concentration of from 1 x 10 17 to 1 x 10 19 cm -3 and Zn at an atomic concentration of from 2 x 10 18 to 6 x 10 19 cm -3 . Further, as another example, B is contained at an atomic concentration of from 1 x 10 17 to 1 x 10 20 cm -3 .
摘要翻译：公开了平均位错密度为500cm -2以下的P型GaAs单晶及其制造方法。 P型GaAs单晶的特征在于，以1×10 17至1×10 19 cm -3的原子浓度含有作为掺杂剂的Si，原子浓度为2× 10 18至10×10 19 cm -3。此外，作为另一个实例，B以1×10 17至1×10 20 cm -3的原子浓度包含。

68. 发明公开

EP0903427A1 APPARATUS AND METHOD FOR PRODUCING CRYSTALS BY THE CZOCHRALSKI METHOD AND CRYSTALS PRODUCED BY THIS METHOD 失效
标题翻译：装置及其制造方法晶体提拉，并通过这种方法产生的结晶
公开(公告)号：EP0903427A1
公开(公告)日：1999-03-24
申请号：EP97902656.4
申请日：1997-02-12
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： SAKURADA, Masahiro, Shin-Etsu Handotai Co. Ltd , MIYAHARA, Yuichi, Takefu Plant , OHTA, Tomohiko, Shin-Etsu HandotaiCo. Ltd
IPC分类号： C30B15/00 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/44
CPC分类号： C30B15/14 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/44
摘要： A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and a heat insulating cylinder disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating cylinder that is located above an upper end of the heater is so configured that its inner diameter is larger than the outer diameter of the heater at its lower end, and that its inner diameter at its upper end is equal to or less than the inner diameter of the heater while its outer diameter is equal to or greater than the outer diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution inside the crystal producing apparatus or the thermal history of crystals.
摘要翻译：一种用于通过切克劳斯基方法，由此晶体生长gemäß到CZ法时的热历史可以容易和精确地控制生产的结晶方法和装置。该装置包括一个坩埚用于容纳剃须刀，用于加热的加热器和熔化原料，以及热绝缘圆筒配置成包围该坩埚和加热器，worin绝热圆柱体的一部分并位于高于加热器的上端被如此构造做它的内径大于在其下端处的加热器的外径大，并没有在其上端其内径比而它的外加热器的内径等于或小于直径等于或小于所述加热器的外径大。该装置用于产生晶体和控制晶体制造装置或晶体的热历史内部的温度分布。

69. 发明公开

EP0742850A4 METHOD OF SYNTHESIZING III-V SEMICONDUCTOR NANOCRYSTALS 失效
标题翻译：用于生产III-V半导体纳米晶体
公开(公告)号：EP0742850A4
公开(公告)日：1997-05-07
申请号：EP95909284
申请日：1995-01-23
申请人： UNIV DUKE
发明人： WELLS RICHARD L , KHER SHREYAS S
IPC分类号： C01G15/00 , C01B25/08 , C01G28/00 , C01G30/00 , C30B7/00 , C30B7/02 , C30B29/40
CPC分类号： C30B7/00 , C30B29/40 , C30B29/42 , C30B29/44 , Y10S420/903
摘要： The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield.

70. 发明公开

EP0559921A4 APPARATUS FOR AND METHOD OF PRODUCING SINGLE CRYSTAL SEMICONDUCTOR OF HIGH DISSOCIATION PRESSURE COMPOUND 失效
标题翻译：高分散压力复合材料单晶半导体生产方法及方法
公开(公告)号：EP0559921A4
公开(公告)日：1995-11-22
申请号：EP93906300
申请日：1991-11-12
申请人： MITSUBISHI MATERIALS CORP
发明人： SASSA KOICHI KAGOBUTSU HANDOTA , ATAMI TAKASHI KAGOBUTSU HANDOT , SHIRATA KEIJI KAGOBUTSU HANDOT
IPC分类号： C30B15/00 , C30B15/02
CPC分类号： C30B15/02 , C30B15/00 , C30B29/42 , Y10T117/1032 , Y10T117/1064
摘要： An apparatus for and method of producing a single crystal of a high dissociation pressure compound such as GaAs. The producing apparatus comprises: an openable sealed vessel (20) housed in an outer vessel (78) and having a tubular portion, top plate portions (22A) for blocking opposite ends of the tubular portion and a bottom portion (42); vessel heating means (36, 38 and 40) for heating the sealed (20); and a steam pressure control section whose inner space communicates with an inner space of the sealed vessel (20). The steam pressure control section comprises: a steam pressure control vessel (98) obtained by defining an air-tight inner space S between a cylindrical inner wall portion (102) and a cylindrical outer wall portion (100), which are concentric with each other; a communicating means (96) for establishing communication between this steam pressure control vessel (98) and the sealed vessel (20); heat pipes (108, 112) disposed along at least one of the inner wall portion and the outer wall portion of the steam pressure control vessel (98); and control section heating means (110, 114), which are disposed inside the inner wall portion and outside the outer wall portion of the steam pressure control vessel (98), respectively.

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