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2. 发明公开

EP1220305A1 CVD process 失效
标题翻译： CVD法
公开(公告)号：EP1220305A1
公开(公告)日：2002-07-03
申请号：EP02004974.8
申请日：1997-03-18
申请人： NIPPON SANSO CORPORATION
发明人： Arai, Takayuki , Hidaka, Junichi , Matsumoto, Koh , Akutsu, Nakao , Aoyama, Kazuhiro , Inaishi, Yoshiaki , Waki, Ichitaro
IPC分类号： H01L21/205 , C23C16/455 , C30B25/14 , C30B25/02
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45591 , C30B25/02 , C30B25/14 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/42
摘要： Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11. The CVD system contains two separators 18, 19 disposed in the reactor 11 on the upstream side of the substrate mounting section to be parallel to the surface of the substrate 11 so as to define in the reactor three parallel layers of passages consisting of a first passage 20, a second passage 21 and a third passage 22; a first CVD gas introducing pipe 22 communicating to the first passage 23; a second CVD gas introducing pipe 24 communicating to the second passage 21; and a deposition accelerating gas introducing pipe 25 communicating to the third passage 22.
摘要翻译：提供了可以生长具有最少缺陷并且具有高源气体利用效率和提高的生产率的两种或更多种组分的优异的化合物半导体薄膜的CVD系统和CVD方法。根据CVD系统和CVD工艺，将至少两种源气平行于放置在反应器10中的衬底11的表面引入，以在衬底的表面上生长两种或更多种组分的化合物半导体薄膜 CVD系统包含设置在反应器11中的两个分离器18,19，其位于衬底安装部分的上游侧，以平行于衬底11的表面，从而在反应器中限定三个平行的通道层，第一通道20，第二通道21和第三通道22; 与第一通道23连通的第一CVD气体导入管22; 与第二通道21连通的第二CVD气体导入管24; 以及与第三通道22连通的沉积加速气体导入管25

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