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51. 发明公开

EP2290708A4 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译：发光元件及其制造方法
公开(公告)号：EP2290708A4
公开(公告)日：2012-11-28
申请号：EP09739015
申请日：2009-05-04
申请人： LG INNOTEK CO LTD
发明人： SONG JUNE O
IPC分类号： H01L33/14 , H01L33/00 , H01L33/02 , H01L33/16 , H01L33/32
CPC分类号： H01L33/0066 , H01L33/14 , H01L33/16 , H01L33/32

52. 发明公开

EP2369645A4 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译： NITRIDHALBLEITERELEMENT及其制造方法
公开(公告)号：EP2369645A4
公开(公告)日：2012-11-14
申请号：EP10822853
申请日：2010-09-21
申请人： PANASONIC CORP
发明人： ANZUE NAOMI , YOKOGAWA TOSHIYA
IPC分类号： H01L33/32 , H01L21/28 , H01L29/04 , H01L29/20 , H01L29/45 , H01L33/16 , H01L33/40
CPC分类号： H01L29/452 , H01L21/28575 , H01L24/14 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00 , H01L2924/00012

53. 发明公开

EP2519979A2 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERWENDUNG EINER AUF ALGAN BASIERENDEN ZWISCHENSCHICHT 有权转让
标题翻译：光电子半导体芯片和AlGaN中的使用基于过渡层
公开(公告)号：EP2519979A2
公开(公告)日：2012-11-07
申请号：EP10798083.1
申请日：2010-12-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , GMEINWIESER, Nikolaus , TAKI, Tetsuya , LUGAUER, Hans-Jürgen , WALTER, Alexander
IPC分类号： H01L33/00 , H01L33/32 , H01L33/02 , H01L33/22 , H01L33/16 , H01L33/12
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： In at least one form of embodiment of the optoelectronic semiconductor chip (100), said chip comprises a semiconductor layer sequence (1) based on GaN, InGaN, AlGaN und/oder InAlGaN. The semiconductor layer sequence (1) contains a p-doped layer sequence (2), an n-doped layer sequence (4), and an active zone (3) between the p-doped layer sequence (2) and the n-doped layer sequence (4). The semiconductor layer sequence (1) comprises at least one intermediate layer (5) based on Al
x Ga
1-x N, where 0

54. 发明公开

EP2513983A2 GALLIUM NITRIDE WAFER SUBSTRATE FOR SOLID STATE LIGHTING DEVICES, AND ASSOCIATED SYSTEMS AND METHODS 有权转让
标题翻译：氮化镓晶圆基板固态照明设备和相关系统及方法
公开(公告)号：EP2513983A2
公开(公告)日：2012-10-24
申请号：EP10842599.2
申请日：2010-12-16
申请人： Micron Technology, Inc.
发明人： LOCHTEFELD, Anthony , MARCHAND, Hugues
IPC分类号： H01L33/16
CPC分类号： H01L33/486 , C30B29/06 , C30B33/10 , H01L21/02389 , H01L21/02447 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/0079 , H01L33/16 , H01L33/32 , H01S5/32341
摘要： Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.

55. 发明公开

EP1958266A4 SILICON-BASED LIGHT EMITTING DIODE USING SIDE REFLECTING MIRROR 有权
标题翻译：在具有侧镜反射的基于硅的发光二极管
公开(公告)号：EP1958266A4
公开(公告)日：2012-10-17
申请号：EP06757518
申请日：2006-04-25
申请人： KOREA ELECTRONICS TELECOMM
发明人： KIM TAE-YOUB , PARK NAE-MAN , SUNG GUN-YONG , YANG JONG-HEON
IPC分类号： H01L33/10 , H01L33/34 , H01L33/06 , H01L33/08 , H01L33/16 , H01L33/18 , H01L33/20 , H01L33/42 , H01L33/60
CPC分类号： H01L33/20 , H01L33/06 , H01L33/10 , H01L33/18 , H01L33/34 , H01L33/60

56. 发明公开

EP2020690A4 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER 审中-公开
标题翻译：半导体光成分和WAFER
公开(公告)号：EP2020690A4
公开(公告)日：2012-08-29
申请号：EP07742997
申请日：2007-04-27
申请人： PANASONIC CORP
发明人： KAMEI HIDENORI , SHINAGAWA SYUUICHI
IPC分类号： H01L33/00 , H01L33/16
CPC分类号： H01L33/16 , H01L33/0095

57. 发明公开

EP2455988A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：基督教徒基督教徒基督教信仰基金会
公开(公告)号：EP2455988A1
公开(公告)日：2012-05-23
申请号：EP10787665.8
申请日：2010-06-14
申请人： Sumitomo Electric Industries, Ltd.
发明人： KYONO Takashi , ENYA Yohei , YOSHIZUMI Yusuke , AKITA Katsushi , SUMITOMO Takamichi , UENO Masaki
IPC分类号： H01L33/32 , H01L33/06 , H01L33/16
CPC分类号： H01L33/04 , H01L33/12
摘要： A nitride-based semiconductor light-emitting device having enhanced efficiency of carrier injection to a well layer is provided. The nitride-based semiconductor light-emitting device comprises a hexagonal gallium nitride-based semiconductor substrate 5, an n-type gallium nitride-based semiconductor region 7 disposed on the principal surface S1 of the substrate 5, a light-emitting layer 11 having a single-quantum-well structure disposed on the n-type gallium nitride-based semiconductor region 7, and a p-type gallium nitride-based semiconductor region 19 disposed on the light-emitting layer 11. The light-emitting layer 11 is disposed between the n-type gallium nitride-based semiconductor region 7 and the p-type gallium nitride-based semiconductor region 19. The light-emitting layer 11 includes a well layer 15 and barrier layers 13 and 17. The well layer 15 comprises InGaN. The principal surface S1 extends along a reference plane S5 tilting from a plane perpendicular to the c-axis of the hexagonal gallium nitride-based semiconductor at a tilt angle in a range of not less than 63 degrees and not more than 80 degrees or in a range of not less than 100 degrees and not more than 117 degrees.
摘要翻译：提供了具有提高载流子注入阱层效率的氮化物基半导体发光器件。氮化物系半导体发光元件包括六方晶系氮化镓系半导体基板5，配置在基板5的主面S1上的n型氮化镓系半导体区域7，发光层11具有设置在n型氮化镓系半导体区域7上的单量子阱结构以及配置在发光层11上的p型氮化镓系半导体区域19.发光层11配置在 n型氮化镓基半导体区域7和p型氮化镓基半导体区域19.发光层11包括阱层15和阻挡层13和17.阱层15包括InGaN。主表面S1沿着垂直于六方晶系氮化镓基半导体的c轴的平面倾斜的参考平面S5延伸，倾斜角度在不小于63度且不大于80度的范围内，或者在范围不小于100度且不超过117度。

58. 发明公开

EP2343743A2 Light emitting device, method of manufacturing light emitting device, light emitting device package, and lighting system 审中-公开
标题翻译：发光的发光装置的器件制造方法，壳体发光器件和照明系统
公开(公告)号：EP2343743A2
公开(公告)日：2011-07-13
申请号：EP10197308.9
申请日：2010-12-29
申请人： LG Innotek Co., Ltd.
发明人： Kang, Dae Sung
IPC分类号： H01L33/16
CPC分类号： H01L33/16 , H01L33/0095 , H01L33/22 , H01L2224/48091 , H01L2924/00014
摘要： Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleaved facets of an A-plane and an M-plane.
摘要翻译：本发明提供一种发光器件，制造发光器件，发光器件封装件的方法，以及照明系统，该发光器件包括发光结构层包括第一导电类型半导体层，第二导电型半导体层到第一导电类型半导体层和第二层的导电类型之间的有源层。在发光结构层的至少一个横向表面具有切割的A面的和M面刻面。

59. 发明公开

EP2043167A4 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：发光NITRIDHALBLEITERELEMENT及其制造方法
公开(公告)号：EP2043167A4
公开(公告)日：2011-01-05
申请号：EP08739137
申请日：2008-03-28
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： AKITA KATSUSHI , KYONO TAKASHI , ISHIBASHI KEIJI , KASAI HITOSHI
IPC分类号： H01L33/00 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/32
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/16 , H01L33/32

60. 发明公开

EP2230699A3 Light emitting device, light emitting device package and lighting system including the same 有权
标题翻译：的发光装置，用于外壳的发光装置和照明系统，以便
公开(公告)号：EP2230699A3
公开(公告)日：2010-12-08
申请号：EP10156535.6
申请日：2010-03-15
申请人： LG Innotek Co., Ltd.
发明人： Cho, Hyun Kyong , Song, Hyun Don , Hong, Chang Hee , Kim, Hyung Gu
IPC分类号： H01L33/20 , H01L33/16
CPC分类号： H01L33/20 , F21K9/23 , F21Y2113/13 , F21Y2115/10 , H01L33/007 , H01L33/0079 , H01L33/16 , H01L33/382 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided are a light emitting diode (190), a light emitting diode package (200) and a lighting system (1100) including the same. The light emitting diode (LED) comprises a light emitting structure comprising a second conductive type semiconductor layer (140), an active layer (130), and a first conductive type semiconductor layer (120) and a first electrode (125) over the light emitting structure. A portion (110) of the light emitting structure is sloped at a predetermined angle.
摘要翻译：本发明提供一种发光二极管（190），发光二极管封装件（200）以及照明系统（1100）包括相同。发光二极管（LED）的光包括：发光结构，其包括有源层（130）和第一导电型半导体层（120）和在所述光的第一电极（125）的第二导电型半导体层（140）发光结构。所述发光结构的一部分（110）以预定的角度是倾斜的。

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