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1. 发明公开

EP2352182A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING EPITAXIAL WAFER 审中-公开
标题翻译：用于生产发光NITRIDHALBLEITERELEMENTS及其制造方法的外延晶片
公开(公告)号：EP2352182A1
公开(公告)日：2011-08-03
申请号：EP09821994.2
申请日：2009-10-19
申请人： Sumitomo Electric Industries, Ltd.
发明人： SUMITOMO Takamichi , AKITA Katsushi , KYONO Takashi , YOSHIZUMI Yusuke
IPC分类号： H01L33/32 , H01L21/205 , H01S5/343
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02579 , H01L21/0262 , H01L33/0062 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/34333
摘要： Provided is a method of fabricating a nitride semiconductor light emitting device, and this method can reduce degradation of a well layer during formation of a p-type gallium nitride based semiconductor region and a barrier layer. After growth of a gallium nitride based semiconductor region 13, a barrier layer 2 1 a is grown on a substrate 11. The barrier layer 21a is formed at a growth temperature TB during a period from a time t1 to t2. The growth temperature TB (= T2) is in the range of not less than 760 Celsius degrees and not more than 800 Celsius degrees. At the time t2, the growth of the barrier layer 21a is completed. After the growth of the barrier layer 21a, a well layer 23a is grown on the substrate 11 without interruption of growth. The well layer 23a is formed at a growth temperature TW (= T2) during a period from the time t2 to t3. The growth temperature TW is the same as the growth temperature TB and can be in the range of not less than 760 Celsius degrees and not more than 800 Celsius degrees. An indium composition of the well layer 23a is not less than 0.15. Next, the growth of the well layer and barrier layer is repeatedly carried out without interruption of growth.
摘要翻译：本发明提供一种制造氮化物半导体发光器件的方法，并且该方法可以在形成p型氮化镓基半导体区域和势垒层的过程中减少阱层的劣化。氮化镓基半导体区域13，阻挡层2 1一个生长在衬底11的势垒层21a上在从时间t1至t2的期间的生长温度TB形成生长之后。生长温度TB（= T2）为不小于摄氏760度以上，摄氏800度的范围内和。在时刻t2，势垒层21a的生长结束。势垒层21a的生长之后，阱层23a被在基板11生长没有生长的中断。阱层23a被在从时间t2到t3的期间的生长温度TW（= T2）形成。生长温度TW是相同的生长温度TB，并且可以是在不低于摄氏760度以上，摄氏800度的范围内和。阱层23a的铟组成不小于0:15以下。接着，将阱层和势垒层的生长重复执行，而不中断生长。

2. 发明公开

EP2445064A1 III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开
标题翻译： III-NITRID-HALBLEITERLASERELEMENT UND VERFAHREN ZUR HERSTELLUNG DES III-NITRID-HALBLEITERLASERELEMENTS
公开(公告)号：EP2445064A1
公开(公告)日：2012-04-25
申请号：EP09838581.8
申请日：2009-07-16
申请人： Sumitomo Electric Industries, Ltd.
发明人： YOSHIZUMI Yusuke , ENYA Yohei , KYONO Takashi , ADACHI Masahiro , AKITA Katsushi , UENO Masaki , SUMITOMO Takamichi , TOKUYAMA Shinji , KATAYAMA Koji , NAKAMURA Takao , IKEGAMI Takatoshi
IPC分类号： H01S5/323 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有在六边形III族氮化物的c轴朝向m轴倾斜的支撑基底的半极性表面上具有低阈值电流的激光腔。第一和第二断裂面27,29以形成激光腔与m-n平面相交。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的频带转换来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或者a平面。

3. 发明公开

EP2390972A1 NITRIDE-SEMICONDUCTOR LUMINESCENT ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD OF PRODUCING NITRIDE-SEMICONDUCTOR LUMINESCENT ELEMENT 审中-公开
标题翻译：氮化物半导体发光元件，制造氮化物半导体发光元素外延和方法
公开(公告)号：EP2390972A1
公开(公告)日：2011-11-30
申请号：EP09838886.1
申请日：2009-12-28
申请人： Sumitomo Electric Industries, Ltd.
发明人： KYONO Takashi , YOSHIZUMI Yusuke , ENYA Yohei , AKITA Katsushi , UENO Masaki , SUMITOMO Takamichi
IPC分类号： H01S5/343 , H01L21/205
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an In X1 Al Y1 Ga 1-X1-Y1 N (0
摘要翻译：提供了一种包括上面具有半极性面的GaN支撑基体的发光层，并且由于失配位错，允许减少在发光效率的抑制的氮化物半导体发光器件。一种氮化物半导体发光器件11具有由六方晶系氮化镓支撑基体13，或者是氮化n型氮化镓半导体层15中包括的X1的Al Y1镓1-X1-Y1 N（0

4. 发明公开

EP2312651A1 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开
标题翻译：甘光半导体元件，其制造方法光学甘半导体元件，外延片和方法为建设GaN系半导体薄膜
公开(公告)号：EP2312651A1
公开(公告)日：2011-04-20
申请号：EP09804942.2
申请日：2009-08-03
申请人： Sumitomo Electric Industries, Ltd.
发明人： ENYA Yohei , YOSHIZUMI Yusuke , UENO Masaki , AKITA Katsushi , KYONO Takashi , SUMITOMO Takamichi , NAKAMURA Takao
IPC分类号： H01L33/00 , H01L21/205 , H01S5/343
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis "Cx" extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis "Cx." The reference axis "Cx" extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.
摘要翻译：在基于GaN半导体光元件11a中，在基板的主面13a 13个倾斜以在C方向上延伸的倾斜角度朝向所述第一GaN基半导体的m轴方向相对于轴线“CX”的引用轴在第一GaN基半导体，并且所述倾斜角度是63度以上，且小于80度。基于GaN的半导体外延区域15设置在主面13a。上活性层17上的GaN半导体外延区域15。有源层17包括一个半导体外延层19。半导体外延层19由InGaN构成。所述半导体外延层的厚度方向倾斜19相对于轴线的参考“CX”。轴“CX”的参考文献的[0001]轴方向上延伸。这种结构提供了GaN系半导体光元件做减少了可在发光特性降低，由于铟偏析。

5. 发明公开

EP2528119A1 GAN SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译： VERFAHREN ZU SEINER HERSTELLUNG的GAN-HALBLEITER-LICHTEMISSIONSELEMENT
公开(公告)号：EP2528119A1
公开(公告)日：2012-11-28
申请号：EP11732997.9
申请日：2011-01-18
申请人： Sumitomo Electric Industries, Ltd.
发明人： ENYA Yohei , KYONO Takashi , SUMITOMO Takamichi , AKITA Katsushi , UENO Masaki , NAKAMURA Takao
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1 × 10 7 cm -2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由具有从c面向m轴倾斜角大于或等于63度倾斜的主表面13a的GaN基半导体构成的衬底13，以及低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由含有铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

6. 发明公开

EP2485283A1 METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN HALBLEITERELEMENTS
公开(公告)号：EP2485283A1
公开(公告)日：2012-08-08
申请号：EP10820428.0
申请日：2010-09-22
申请人： Sumitomo Electric Industries, Ltd.
发明人： KYONO Takashi , ENYA Yohei , YOSHIZUMI Yusuke , AKITA Katsushi , UENO Masaki , SUMITOMO Takamichi , ADACHI Masahiro , TOKUYAMA Shinji
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/0075 , H01L33/16 , H01S5/0014 , H01S5/34333
摘要： A method of making a semiconductor light-emitting device is provided, and this method enables the selection of an appropriate orientation of piezoelectric polarization in an active layer. In Step S104, the measurement of photoluminescence of the substrate product, which is formed by growing n-type and p-type gallium nitride based semiconductor layers and an light emitting layer using the selected one or more tilting angles, is carried out while an electrical bias is applied to the substrate product in order to obtain dependence of the photoluminescence of the substrate product on the bias. In Step S105, the estimation of the direction of the piezoelectric polarization in the light-emitting layer at each of the selected tilt angle of the substrate primary surface is carried out from the observed bias dependence. In Step S106, either of the tilting angle on the primary surface or on the back side surface is selected based on the estimation to determine the orientation of a growth substrate for forming the semiconductor light emitting device. A semiconductor laminate for the semiconductor light emitting device is grown on the primary surface of growth substrate.
摘要翻译：提供了一种制造半导体发光器件的方法，并且该方法能够在有源层中选择压电极化的适当取向。在步骤S104中，通过使用所选择的一个或多个倾斜角度生长n型和p型氮化镓基半导体层和发光层形成的衬底产物的光致发光测量，同时电为了获得衬底产物的光致发光对偏压的依赖性，将偏置施加到衬底产物。在步骤S105中，从观察到的偏置依赖性进行基板主面的所选择的倾斜角度的发光层中的压电极化的方向的估计。在步骤S106中，基于估计来选择主表面或背面表面上的倾斜角，以确定用于形成半导体发光器件的生长衬底的取向。在生长衬底的主表面上生长用于半导体发光器件的半导体层压体。

7. 发明公开

EP2455989A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：基督教徒基督教徒基督教信仰基金会
公开(公告)号：EP2455989A1
公开(公告)日：2012-05-23
申请号：EP10799702.5
申请日：2010-06-18
申请人： Sumitomo Electric Industries, Ltd.
发明人： KYONO Takashi , ENYA Yohei , YOSHIZUMI Yusuke , AKITA Katsushi , UENO Masaki , SUMITOMO Takamichi , ADACHI Masahiro , TOKUYAMA Shinji
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404
摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.
摘要翻译：氮化物系半导体发光元件LE1或LD1具有：氮化镓衬底11，其主表面11a在40°至50°的范围内或在大于90°至130°的范围内产生角度±，其中参考平面Sc垂直于在c轴方向上延伸的参考轴线Cx; n型氮化镓系半导体层13; 第二氮化镓基半导体层17; 以及包括多个InGaN阱层和GaN基半导体的多个势垒层23的发光层15，其中多个阱层21的压电极化的方向是来自n型的方向氮化镓系半导体层13朝向第二氮化镓系半导体层17。

8. 发明公开

EP2400604A1 III NITRIDE SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR LASER 审中-公开
标题翻译：维多利亚三硝基三硝基三硝基三硝基甲酸酯
公开(公告)号：EP2400604A1
公开(公告)日：2011-12-28
申请号：EP09840443.7
申请日：2009-12-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： FUJII Kei , UENO Masaki , AKITA Katsushi , KYONO Takashi , YOSHIZUMI Yusuke , SUMITOMO Takamichi , ENYA Yohei
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S2304/04
摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination A OFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than -1 and not more than 0.1. The polarization degree P of the III -nitride semiconductor laser is defined by P = (I1 - I2)/(I1 + I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.
摘要翻译：提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。半导体基板13的主表面13a相对于垂直于GaN的参考平面朝向a轴方向不小于50度且不超过70度的倾斜角度A OFF倾斜沿着c轴方向的参考轴Cx。在半导体衬底13的主表面13a上设置有第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。使用X1方向的电场分量I1和X2的X2方向的电场分量I2，将III-氮化物半导体激光器的偏振度P定义为P =（I1-I2）/（I1 + I2）在LED模式下。

9. 发明公开

EP2477234A1 GROUP III-V COMPOUND SEMICONDUCTOR LIGHT RECEIVING ELEMENT, METHOD FOR MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT, AND EPITAXIAL WAFER 有权
标题翻译： III-V族复合半导体发光记录元件，制造方法中III-V族复合半导体发光记录元件，光线和记录元件外延片SO
公开(公告)号：EP2477234A1
公开(公告)日：2012-07-18
申请号：EP10813575.7
申请日：2010-07-21
申请人： Sumitomo Electric Industries, Ltd.
发明人： AKITA Katsushi , ISHIZUKA Takashi , FUJII Kei , NAGAI Youichi
IPC分类号： H01L31/10
CPC分类号： H01L31/035209 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L31/03042 , H01L31/03046 , H01L31/035236 , H01L31/109 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.
摘要翻译：本发明的一个目的是提供一种III-V族化合物半导体光电检测器吸收层的包含具有含Sb作为V族构成元素的III-V族化合物半导体层和n型InP窗口层，导致降低暗电流。生长在吸收层23上的InP层23含有锑作为杂质，由于其在吸收层21的一个的GaAsSb层的生长在III-V族化合物半导体光电检测器11中提供有锑的记忆效应的所有， InP层23含有锑作为杂质和掺杂有硅作n型掺杂剂。虽然在InP层23锑杂质产生的孔中，包含在InP层23中的硅补偿所产生的载流子。其结果是，在InP层23的第二部分23d具有足够的n型导电性。

10. 发明公开

EP2472606A1 GROUP III NITRIDE SEMICONDUCTOR OPTICAL ELEMENT 审中-公开
标题翻译：优化GRUPPE-III-NITRID-HALBLEITERBAUELEMENT
公开(公告)号：EP2472606A1
公开(公告)日：2012-07-04
申请号：EP10781399.0
申请日：2010-02-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： UENO Masaki , YOSHIZUMI Yusuke , ENYA Yohei , KYONO Takashi , AKITA Katsushi , SUMITOMO Takamichi , ADACHI Masahiro , TOKUYAMA Shinji
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1 × 10 17 cm -3 but not exceeding 8 × 10 17 cm -3 . The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1 × 10 17 cm -3 but not exceeding 1 × 10 19 cm -3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学器件11a具有III族氮化物半导体衬底13，其具有与III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。有源层17的氧含量至少为1×10 17 cm -3，但不超过8×10 17 cm -3。多个阻挡层29在与下部界面28Sd接触的上侧近界面区域29u中含有除了氧以外的至少1×10 17 cm -3但不超过1×10 19 cm -3的n型杂质的III族氮化物半导体衬底侧的阱层28。

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