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51. 发明公开

EP0782226A1 Method of making distributed feedback laser having spatial variation of grating coupling along laser cavity length 失效
标题翻译：一种制造半导体激光器的方法具有分布式Rüchkopplung和沿着谐振varierender光栅耦合
公开(公告)号：EP0782226A1
公开(公告)日：1997-07-02
申请号：EP96308807.5
申请日：1996-12-05
申请人： Lucent Technologies Inc.
发明人： Dautremont-Smith, William Crossley , Hayes, Todd Robert
IPC分类号： H01S3/085
CPC分类号： H01S5/12 , H01S5/1225 , H01S5/2077 , H01S5/2272
摘要： Embodiments of the invention include a distributed feedback (DFB) laser is made with a spatially graded optical coupling (κ) between its diffraction grating and its active layer by means of selective area epitaxial growth of the epitaxial layer from which the grating is formed. More specifically, the epitaxial layer is formed on a major surface of a semiconductor substrate on which a mask, such as a silicon dioxide mask, has been formed. The mask has a pair of segments spaced apart by a fixed distance, the segments having spatially variable widths. Advantageously the epitaxial layer has a refractive index that is different from that of the substrate at the operating wavelength of the laser. The epitaxial layer is then etched into stripes. In this way the heights of the resulting grating stripes will be spatially variable, and so will the coupling κ between the grating and the active layer. In this way, the properties of the optical output of the laser can be adjusted. Advantageously also, the spacer layer and the substrate have the same refractive indices at the operating wavelength of the laser, whereby accurate control over the depth of the etching is not required.
摘要翻译：本发明的实施例包括一个分布反馈（DFB）激光器，其衍射光栅和由从该光栅是形成在外延层的选择性区域外延生长的手段其活性层之间的空间梯度的光耦合（卡帕）制成。更具体地，外延层形成在其上的掩模，颜色的半导体衬底的主表面：如二氧化硅掩膜，已经形成。掩模固定距离具有一对间隔开的段，具有空间可变宽度的段。有利地，所述外延层具有的折射率确实是从不同衬底在激光器的工作波长的那样。然后在外延层蚀刻成条纹。以这种方式所得到的光栅条纹的高度将是空间变化，所以将光栅和有源层之间的耦合卡帕。以这种方式，激光的光输出的性质可以被调节。因此，有利地，间隔层和所述基底具有在激光，由此不需要通过蚀刻深度精确的控制的工作波长相同的折射率。

52. 发明公开

EP0735635A2 Optical semiconductor apparatus, driving method therefor, light source apparatus and optical communication system using the same 失效
标题翻译：的光半导体装置的驱动方法和光通信系统
公开(公告)号：EP0735635A2
公开(公告)日：1996-10-02
申请号：EP96105090.3
申请日：1996-03-29
申请人： CANON KABUSHIKI KAISHA
发明人： Mizutani, Natsuhiko , Sakata, Hajime , Furukawa, Yukio
IPC分类号： H01S3/103 , H01S3/085 , H01S3/19 , H04B10/14
CPC分类号： B82Y20/00 , H01S5/06203 , H01S5/06236 , H01S5/0625 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/12 , H01S5/1215 , H01S5/1225 , H01S5/124 , H01S5/204 , H01S5/227 , H01S5/2275 , H01S5/3201 , H01S5/3404 , H01S5/3413 , H01S5/34306 , H01S5/3434 , H01S5/5009 , H01S5/5018 , H01S2301/14
摘要： An optical semiconductor apparatus includes at least two semiconductor laser portions (11, 12; 21, 22; 31, 32; 41, 42; 51, 52; 61, 62; 71, 72; 81, 82; 2011, 2013) each having a light waveguide with an active layer (35, 45, 105, 503, 513, 605, 703, 714, 803, 1015, 1215, 2105, 2303, 2703, 2714, 2724) and a distributed reflector (33, 43, 102, 505, 515, 603, 705, 716, 806, 1039, 1139, 2102, 2305, 2705), and a stimulating unit (113, 114, 115; 1035, 1037; 2109, 2110; 2308, 2309; 2708, 2709) for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides. When one of injection of a modulation current signal into or application of a mudulation voltage to the optical semiconductor apparatus, an oscillation state can be switched between a state in which Bragg wavelengths for one of the two different polarization modes coincide with each other between the light waveguides and a state in which Bragg wavelengths for the other of the two different polarization modes coincide with each other between the light waveguides.

53. 发明授权

EP0390614B1 Distributed feedback laser 无效
标题翻译：激光分布反馈。
公开(公告)号：EP0390614B1
公开(公告)日：1995-09-06
申请号：EP90303530.1
申请日：1990-04-02
申请人： BRITISH TELECOMMUNICATIONS public limited company
发明人： Westbrook, Leslie David
IPC分类号： H01S3/085 , H01S3/025
CPC分类号： H01S5/12 , H01S3/0635 , H01S5/1212 , H01S5/1225 , H01S5/124

54. 发明公开

EP0607782A1 Optical dispersion compensator 失效
标题翻译： Optischer Dispersionskompensator。
公开(公告)号：EP0607782A1
公开(公告)日：1994-07-27
申请号：EP94100030.9
申请日：1994-01-03
申请人： HITACHI, LTD.
发明人： Ido, Tatemi, Hitachi Daini Kyoshinryo , Sano, Hirohisa, Hitachi Koigakuboryo
IPC分类号： H04B10/18 , G02B6/12
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/124 , G02B6/29394 , G02F1/0147 , G02F1/01708 , G02F1/025 , G02F2001/0151 , G02F2201/30 , H01S5/1212 , H01S5/1215 , H01S5/1225 , H01S5/5045 , H04B10/25133 , H04B2210/252
摘要： An optical signal is incident on a semiconductor optical waveguide with a grating (4) and is reflected or transmitted therethrough to thereby perform dispersion compensation. Application of an electric field or implantation of carriers can be effected in the optical waveguide by means of electrodes (5 and 6) attached in the optical waveguide. In addition, a temperature of the optical waveguide can be varied by a resistance heater (9). By using these measures, the dispersion compensation wavelength and the dispersion compensation intensity can be adjusted.
摘要翻译：光信号入射到具有光栅（4）的半导体光波导上，并被反射或透过，从而进行色散补偿。可以通过附接在光波导中的电极（5和6）在光波导中实现电场或载流子的注入。此外，光波导的温度可以通过电阻加热器（9）来改变。通过使用这些措施，可以调节色散补偿波长和色散补偿强度。

55. 发明公开

EP0606092A2 Laser diode element 失效
标题翻译：激光二极管组件。
公开(公告)号：EP0606092A2
公开(公告)日：1994-07-13
申请号：EP94100190.1
申请日：1994-01-07
申请人： NEC CORPORATION
发明人： Okuda, Tetsuro, c/o NEC Corporation , Yamada, Hirohito, c/o NEC Corporation , Torikai, Toshitaka, c/o NEC Corporation
IPC分类号： H01S3/085 , H01S3/103
CPC分类号： H01S5/12 , H01S5/028 , H01S5/06213 , H01S5/1039 , H01S5/1225
摘要： In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front the rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5 %, and an active layer and a uniform grating having regular corrugation formed in the direction of the laser cavity and which are coupled to each other at a predetermined coupling constant K , the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.

56. 发明公开

EP0559192A3 Distributed reflector and wavelength-tunable semiconductor laser 失效
标题翻译：分布式反射器和波长可控半导体激光器
公开(公告)号：EP0559192A3
公开(公告)日：1993-09-22
申请号：EP93103480.5
申请日：1993-03-04
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Tohmori, Yuichi , Yoshikuni, Yuzo , Ishii, Hiroyuki , Tamamura, Toshiaki , Kano, Fumiyoshi
IPC分类号： H01S3/085 , H01S3/03 , G02B5/18 , H01S3/103
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
摘要： The distributed reflector includes a substrate (1) and at least one optical waveguide formed on the substrate and having a refractive index larger than the substrate and at least one optical confinement layer (3) having a refractive index smaller than the optical waveguide layer. A diffractive grating (10a or 10b) is formed in at least one layer (2 or 3) constituting the optical waveguide. The diffractive grating has a structure of which at least one parameter defining optical reflectivity varies depending on its position, and is formed continuously for at least two periods, the period being approximately defined by the length of repeating unit region. The parameter may be pitch, coupling coefficient, bandgap composition, phase shift, etc. The semiconductor laser includes the distributed reflector which may be of a distributed reflector type or distributed feed back type and has distributed reflector regions (102, 103) and a phase adjustment region (104). The laser also has a cladding layer (4), a cap layer (5), current block layers (6, 7), electrodes (8, 9), connection portions (11), and grooves (30). Application of current or voltage to the refractive index of the active region (101) or inactive region (102, 103, 104) in which a diffractive grating is present or absent adjusts the refractive index thereof and enables coarse and fine adjustment of lasing wavelength. Comb-shaped electrodes may be used.

57. 发明公开

EP0533485A1 Semiconductor device and method of making it 失效
标题翻译： Halbleiter-Vorrichtung und Methode zu deren Herstellung。
公开(公告)号：EP0533485A1
公开(公告)日：1993-03-24
申请号：EP92308512.0
申请日：1992-09-18
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Abe,Yuji, c/o Mitsubishi Denki K.K.
IPC分类号： H01S3/085
CPC分类号： H01S5/12 , H01S5/1225 , H01S5/125 , H01S5/32391
摘要： A semiconductor laser includes an active layer (3), a cladding layer (4) disposed on the active layer and made of a semiconductor material having a larger energy band than the material of the active layer. A diffraction grating layer (5) is disposed within the cladding layer in a portion close to the active layer. The diffraction grating layer has a multi-layered structure comprising a stack of sub-layers of a plurality of semiconductor materials which can be selectively etched. An optical resonator is formed by the active layer, the cladding layer, and a second cladding layer sandwiching the active layer with the first cladding layer. The diffraction grating layer includes a portion in which the number of the sub-layers is different from the number of the sub-layers in the remaining portion, whereby portions of different coupling coefficients are formed along the axial direction of the optical resonator which constitutes a major section of the semiconductor laser.
摘要翻译：半导体激光器包括有源层（3），设置在有源层上并由具有比有源层的材料更大的能带的半导体材料制成的覆层（4）。衍射光栅层（5）在靠近有源层的部分内设置在包覆层内。衍射光栅层具有多层结构，其包括可选择性蚀刻的多个半导体材料的子层堆叠。光学谐振器由有源层，包层和与第一覆层夹持有源层的第二覆层形成。衍射光栅层包括子层数与剩余部分中的子层数不同的部分，由此构成不同耦合系数的部分沿构成光谐振器的光谐振器的轴向形成半导体激光器的主要部分。

58. 发明公开

EP3317931A1 LASERDIODE MIT VERTEILTER RÜCKKOPPLUNG UND VERFAHREN ZUR HERSTELLUNG 审中-公开
标题翻译：具有分布式反馈的激光二极管及制造方法
公开(公告)号：EP3317931A1
公开(公告)日：2018-05-09
申请号：EP16708698.2
申请日：2016-03-09
申请人： Forschungsverbund Berlin E.V.
发明人： FRICKE, Jörg , ERBERT, Götz , CRUMP, Paul , DECKER, Jonathan
IPC分类号： H01S5/12 , H01S5/20
CPC分类号： H01S5/1225 , H01S5/026 , H01S5/1221 , H01S5/1231 , H01S5/2086
摘要： The invention relates to a laser diode (100) comprising: an active layer (10); a wave guiding region (12) which surrounds the active layer (10) at least in part; a rear facet (14); a front facet (16) designed for decoupling laser radiation, wherein the active layer (10) extends, at least in part, along a first axis (X) between the rear facet (14) and the front facet (16); and a grid (18) which is operatively connected to the wave-guiding region (12), wherein the grid (18) comprises a plurality of webs (22) and trenches (24), characterized in that the plurality of trenches (24) is designed such that an average rise of a coupling parameter
P is not equal to zero for the plurality of trenches (24) along the grid (18), wherein the coupling parameter
P of a trench (24) is defined by the formula (I), wherein d
res is a distance of the trench (24) to the active layer (10),
w is a width of the trench (24) and Δ
n is the refractive index difference between a refractive index of the trench (24) and a refractive index of a material surrounding the trench (24). The invention in particular relates to a laser diode in which a distributed feedback occurs over a surface grid of high order while radiation is decoupled on one side and in which the coupling strength of the grid is matched to the power density of the wave guided in the laser diode.

59. 发明公开

EP2908392A1 Tunable laser device 有权转让
标题翻译： Abstimmbare Laservorrichtung
公开(公告)号：EP2908392A1
公开(公告)日：2015-08-19
申请号：EP14305187.8
申请日：2014-02-13
申请人： ALCATEL LUCENT
发明人： Chimot, Nicolas , Debregeas-Sillard, Hélène
IPC分类号： H01S5/0625 , H01S5/12 , H01S5/10
CPC分类号： H01S5/1225 , H01S5/06258 , H01S5/1064 , H01S5/1215 , H01S5/1228 , H01S5/1237 , H01S5/124
摘要： In an embodiment, the invention provides a tunable laser device comprising a multi-section distributed feedback (DFB) laser having :
- A first Bragg section (3) comprising a waveguide (6) and a Bragg grating,
- A second Bragg section comprising a waveguide and a Bragg grating,
- A phase section (2) being longitudinally located between the first Bragg section and the second Bragg section, the phase section being made of a passive material, each Bragg section having a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section,
Wherein the Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of said at least one Bragg section.
摘要翻译：在一个实施例中，本发明提供了一种包括多段分布反馈（DFB）激光器的可调激光器件，其具有： - 包括波导（6）和布拉格光栅的第一布拉格部分（3）， - 第二布拉格部分，包括波导和布拉格光栅， - 相位部分（2）纵向位于第一布拉格部分和第二布拉格部分之间，相位部分由钝性材料制成，每个布拉格部分具有连接相部分的第一纵向端部和与相位部分相对的第二纵向端，其中至少一个布拉格部分的布拉格光栅具有从所述至少一个布拉格部分的第一纵向端到第二纵向端减小的光栅耦合系数。

60. 发明公开

EP1323218A4 CURRENT BIASED DUAL DBR GRATING SEMICONDUCTOR LASER 审中-公开
标题翻译：偏倚双DBR莱迪思半导体激光器
公开(公告)号：EP1323218A4
公开(公告)日：2007-04-25
申请号：EP01968793
申请日：2001-09-13
申请人： UNIV ILLINOIS
发明人： COLEMAN JAMES J , ROH S DAVID
IPC分类号： H01S5/0625 , H01S3/08 , H01S5/00 , H01S5/12 , H01S5/125 , H01S5/22
CPC分类号： H01S5/22 , H01S5/06256 , H01S5/1096 , H01S5/1206 , H01S5/1225 , H01S5/124 , H01S5/125
摘要： A laser heterostructure (10) having an active layer, a lateral waveguide terminating in an output aperture (11), and a gain section (17) with a current drive electrode. A rear surface distributed Bragg grating (12) with a tuning current electrode (19) is formed on a surface of said laser heterostructure. The laser also includes a front surface distributed Bragg grating (14) with a tuning current electrode (16) on a surface of the laser heterostructure. The front surface distributed Bragg grating is closer to the output aperture than the rear surface distributed Bragg grating. There is a space (15) between the rear surface distributed Bragg grating and the front surface distributed Bragg grating. A current drive electrode (18) is formed on the space. Operation is best when the front surface distributed Bragg grating has adequate reflectivity at the Bragg wavelength with minimal scattering loss at other wavelengths, particularly at the wavelength of the rear surface Bragg grating.

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