专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明公开

EP3332422A1 ADVANCED PROCESSING APPARATUS COMPRISING A PLURALITY OF QUANTUM PROCESSING ELEMENTS 审中-公开
公开(公告)号：EP3332422A1
公开(公告)日：2018-06-13
申请号：EP16831989.5
申请日：2016-08-05
申请人： NewSouth Innovations Pty Limited
发明人： DZURAK, Andrew , VELDHORST, Menno , YANG, Chih-Hwan Henry
IPC分类号： H01L27/10 , B82Y10/00 , H01L21/20 , H01L21/28 , H01L21/31 , H01L29/66
CPC分类号： H01L27/18 , B82Y10/00 , G06N99/002 , H01L21/28 , H01L27/101 , H01L27/222 , H01L29/4238 , H01L29/66984 , H01L29/7613 , H01L39/025 , H01L39/223 , H01L39/2493 , H03K17/92 , Y10S977/774 , Y10S977/814 , Y10S977/935
摘要： The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.

52. 发明授权

EP2919274B1 LATERAL SPIN VALVE ELEMENT 失效
标题翻译：横向旋转阀元件
公开(公告)号：EP2919274B1
公开(公告)日：2018-04-18
申请号：EP13853186.8
申请日：2013-10-31
申请人： Japan Science and Technology Agency , The University Of York
发明人： HIROHATA, Atsufumi
IPC分类号： H01L29/66 , H01L29/06 , H01L29/10 , H01L29/82 , H01L43/02
CPC分类号： H01L43/02 , H01L29/0657 , H01L29/10 , H01L29/66984 , H01L29/68 , H01L29/82
摘要： A spin valve element 10 including a spin injector 12 made of a ferromagnetic material, a spin detector 16 made of a ferromagnetic material, and a channel part 14 made of a non-magnetic material. The spin detector 16 is arranged at a position separated from the spin injector 12, the channel part 14 is connected with the spin injector 12 and the spin detector 16 directly or through an insulating layer, and a plurality of spin diffusion portions 30 to 34 with enlarged cross section areas in a direction perpendicular to a spin current is formed in the channel part 14.

53. 发明公开

EP3073532A4 MAGNETORESISTIVE ELEMENT, SPIN MOSFET, MAGNETIC SENSOR, AND MAGNETIC HEAD 有权
标题翻译：磁阻元件，SPIN-MOSFET，MAGNETISER传感器UND MAGNETKOPF
公开(公告)号：EP3073532A4
公开(公告)日：2017-07-12
申请号：EP14864839
申请日：2014-11-14
申请人： TDK CORP
发明人： SASAKI TOMOYUKI , OIKAWA TOHRU , KOIKE HAYATO
IPC分类号： H01L29/82 , G11B5/39 , H01L29/66
CPC分类号： H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L29/1033 , H01L29/66984 , H01L29/82 , H01L43/02
摘要： Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer (3); a first ferromagnetic layer (12A) disposed on the semiconductor channel layer (3); a second ferromagnetic layer (12B) disposed away from the first ferromagnetic layer (12A); and a non-magnetic first reference electrode (20) disposed away from the first ferromagnetic layer (12A) and the second ferromagnetic layer (12B), wherein current is input from the second ferromagnetic layer (12B) to the first ferromagnetic layer (12A) through the semiconductor channel layer (3), a voltage between the second ferromagnetic layer (12B) and the first reference electrode (20) is output.
摘要翻译：使用半导体的自旋传输元件存在比传统GMR元件和TMR元件更高的元件电阻的问题，使得难以获得高磁阻比。一种包括半导体沟道层（3）的磁阻元件; 设置在所述半导体沟道层（3）上的第一铁磁层（12A）; 第二铁磁层（12B），其远离第一铁磁层（12A）设置; 以及远离第一铁磁层（12A）和第二铁磁层（12B）设置的非磁性第一参考电极（20），其中电流从第二铁磁层（12B）输入到第一铁磁层（12A）通过半导体沟道层（3）输出第二铁磁层（12B）和第一参考电极（20）之间的电压。

54. 发明公开

EP3155659A1 GRAPHENE FLUORINATION FOR INTEGRATION OF GRAPHENE WITH INSULATORS AND DEVICES 审中-公开
标题翻译：柚子叶片整合
公开(公告)号：EP3155659A1
公开(公告)日：2017-04-19
申请号：EP14894479.6
申请日：2014-06-13
申请人： Intel Corporation
发明人： CAUDILLO, Roman , AVCI, Uygar
IPC分类号： H01L23/14 , H01L23/18
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y30/00 , H01L21/02227 , H01L21/02527 , H01L21/0262 , H01L21/0405 , H01L21/044 , H01L23/29 , H01L23/53276 , H01L23/5329 , H01L27/088 , H01L29/42364 , H01L29/4908 , H01L29/51 , H01L29/513 , H01L29/66984 , H01L29/7391 , H01L29/778 , H01L29/78684 , H01L2224/16225 , H01L2924/15311
摘要： Embodiments of the present disclosure describe multi-layer graphene assemblies including a layer of fluorinated graphene, dies and systems containing such structures, as well as methods of fabrication. The fluorinated graphene provides an insulating interface to other graphene layers while maintaining the desirable characteristics of the nonfluorinated graphene layers. The assemblies provide new options for utilizing graphene in integrated circuit devices and interfacing graphene with other materials. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述了包括氟化石墨烯层，模具和包含这种结构的系统的多层石墨烯组件，以及制造方法。氟化石墨烯提供与其它石墨烯层的绝缘界面，同时保持非氟化石墨烯层的期望特性。这些组件提供了在集成电路器件中利用石墨烯和将石墨烯与其他材料接合的新选择。可以描述和/或要求保护其他实施例。

55. 发明公开

EP2919274A4 SPIN VALVE ELEMENT 失效
标题翻译： DREHVENTILELEMENT
公开(公告)号：EP2919274A4
公开(公告)日：2016-08-03
申请号：EP13853186
申请日：2013-10-31
申请人： JAPAN SCIENCE & TECH AGENCY , UNIV YORK
发明人： HIROHATA ATSUFUMI
IPC分类号： H01L29/10 , H01L29/66 , H01L29/82
CPC分类号： H01L43/02 , H01L29/0657 , H01L29/10 , H01L29/66984 , H01L29/68 , H01L29/82
摘要： A spin valve element 10 including a spin injector 12 made of a ferromagnetic material, a spin detector 16 made of a ferromagnetic material, and a channel part 14 made of a non-magnetic material. The spin detector 16 is arranged at a position separated from the spin injector 12, the channel part 14 is connected with the spin injector 12 and the spin detector 16 directly or through an insulating layer, and a plurality of spin diffusion portions 30 to 34 with enlarged cross section areas in a direction perpendicular to a spin current is formed in the channel part 14.

56. 发明授权

EP1764838B1 Use of a spin transistor, using a spin-orbit coupling induced magnetic field 失效
标题翻译：使用旋晶体管，通过偶合磁场的自旋 - 轨道的手段诱导的
公开(公告)号：EP1764838B1
公开(公告)日：2016-03-16
申请号：EP05112407.1
申请日：2005-12-19
申请人： Korea Institute of Science and Technology
发明人： Koo, Hyun Cheol , Han, Suk Hee , Eom, Jong Hwa , Chang, Joon Yeon , Yi, Hyun Jung
IPC分类号： H01L29/66 , H01L29/772 , H01L29/08 , H01F10/193 , H01F1/40
CPC分类号： H01L29/66984 , H01F1/404 , H01F10/193 , H01L29/0843 , H01L29/772

57. 发明公开

EP2847806A2 SPIN TRANSISTORS EMPLOYING A PIEZOELECTRIC LAYER AND RELATED MEMORY, MEMORY SYSTEMS, AND METHODS OF MANUFACTURING THEREOF 有权
标题翻译： SPIN RANSISTOREN使用压电层和有关的记忆存储系统和其生产过程
公开(公告)号：EP2847806A2
公开(公告)日：2015-03-18
申请号：EP13724128.7
申请日：2013-05-09
申请人： Qualcomm Incorporated
发明人： DU, Yang
IPC分类号： H01L43/00
CPC分类号： H01L43/02 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/12
摘要： Spin transistors and related memory, memory systems, and methods are disclosed. A spin transistor is provided by at least two magnetic tunnel junctions (MTJs) with a shared multiferroic layer. The multiferroic layer is formed from a piezoelectric (PE) thin film over a ferromagnetic thin film (FM channel) with a metal electrode (metal). The ferromagnetic layer functions as the spin channel and the piezoelectric layer is used for transferring piezoelectric stress to control the spin state of the channel. The MTJ on one side of the shared layer forms a source and the MTJ on the other side is a drain for the spin transistor.
摘要翻译：自旋晶体管以及相关的内存，存储系统和方法是游离缺失盘。自旋晶体管由至少两个磁隧道结（MTJ）与共享的多重铁性层提供。所述多重铁性层由压电（PE）薄膜上的铁磁薄膜（FM信道）与金属电极（金属）形成。铁磁层用作自旋通道和压电层用于传递环压电应力以控制通道的自旋状态。在共享层的一侧上的MTJ形成源极，而在另一侧的MTJ是用于自旋晶体管的漏极。

58. 发明公开

EP2760050A1 Quantum-dot device 失效
标题翻译：用于初始化孔方法自旋量子点设备
公开(公告)号：EP2760050A1
公开(公告)日：2014-07-30
申请号：EP13153131.1
申请日：2013-01-29
申请人： Hitachi Ltd.
发明人： Mar, Jonathan , Williams, David , Baumberg, Jeremy , Xu, Xiulai
IPC分类号： H01L29/66 , B82Y10/00 , H01L29/76 , H01L29/12
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/127 , H01L29/66984
摘要： A device comprising a semiconductor region (3; Figure 2 ) which comprises a first semiconductor material and a quantum dot (4; Figure 2 ) which comprises a second semiconductor material embedded in the semiconductor region (3). The quantum dot (4) exhibits a bound hole state (10) lying a first energy (ΔE Veff ) below a valence band edge of the semiconductor region and a bound electron state (11) lying a second energy (ΔE Ceff ) below a conduction band edge of the semiconductor region. A ratio (ΔE Ceff / ΔE Veff ) of the second and first energies is no more than 2.0.

59. 发明公开

EP2248157A4 CONTROL AND READOUT OF ELECTRON OR HOLE SPIN 有权转让
标题翻译： CONTROL与阅读电子或空穴SPINN
公开(公告)号：EP2248157A4
公开(公告)日：2014-07-09
申请号：EP09709809
申请日：2009-02-11
申请人： QUCOR PTY LTD
发明人： MORELLO ANDREA , DZURAK ANDREW STEVEN , HUEBL HANS-GREGOR , CLARK ROBERT GRAHAM , WILLEMS VAN BEVEREN LAURENS HENRY , HOLLENBERG LLOYD CHRISTOPHER LEONARD , JAMIESON DAVID NORMAN , ESCOTT CHRISTOPHER
IPC分类号： H01L21/335 , B82Y10/00 , G01N24/10 , G06N99/00 , H01L21/8238 , H01L29/66 , H01L29/76
CPC分类号： G01N24/10 , B82Y10/00 , G06N99/002 , H01L29/66984 , H01L29/7613
摘要： This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.

60. 发明公开

EP2736080A1 RECTIFYING DEVICE, TRANSISTOR, AND RECTIFYING METHOD 有权
标题翻译：整流器旋转时，自旋晶体管和同一牌子程序SPINS
公开(公告)号：EP2736080A1
公开(公告)日：2014-05-28
申请号：EP12825398.6
申请日：2012-08-21
申请人： Japan Science and Technology Agency
发明人： KOHDA, Makoto , NITTA, Junsaku , KOBAYASHI, Kensuke
IPC分类号： H01L29/82 , H01L21/8246 , H01L27/105 , H01L29/06 , H01L29/66
CPC分类号： H01L43/065 , B82Y10/00 , H01F10/00 , H01L27/222 , H01L29/0673 , H01L29/125 , H01L29/205 , H01L29/42356 , H01L29/66984 , H01L29/775 , H01L29/7783 , H01L29/82 , H01L29/861 , H01L43/08 , H01L43/10
摘要： A rectifying device includes: a one-dimensional channel (18) formed with a semiconductor, electrons traveling through the one-dimensional channel; an electrode (26) that applies an effective magnetic field generated from a spin orbit interaction to the electrons traveling through the one-dimensional channel by applying an electric field to the one-dimensional channel, the effective magnetic field being in a direction intersectional to the direction in which the electrons are traveling; and an external magnetic field generating unit (38) that generates an external magnetic field in the one-dimensional channel.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式