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51. 发明公开

EP3244200A1 SENSOR SYSTEM AND DEVICE 审中-公开
标题翻译：传感器系统和装置
公开(公告)号：EP3244200A1
公开(公告)日：2017-11-15
申请号：EP15876971.1
申请日：2015-12-02
申请人： Hitachi Automotive Systems, Ltd.
发明人： ONO Kazuo , USAGAWA Toshiyuki
IPC分类号： G01N27/00 , G01K7/01 , H01L21/336 , H01L21/761 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/08 , H01L27/088 , H01L29/78
CPC分类号： G01N27/4141 , G01K7/01 , G01N27/00 , G01N27/4148 , G01R19/10 , H01L21/761 , H01L21/822 , H01L21/8234 , H01L23/34 , H01L27/04 , H01L27/06 , H01L27/08 , H01L27/088 , H01L29/78
摘要： The invention achieves a lower noise of a sense signal of a FET-type hydrogen sensor.
For solving the above problem, one aspect of a sensor system of the invention includes a reference device and a sensor device configured using FETs on a substrate, and further, well potentials of the reference device and the sensor device are electrically isolated from each other.
摘要翻译：本发明实现了FET型氢传感器的感测信号的较低噪声。为了解决上述问题，本发明的传感器系统的一个方面包括参考装置和使用基板上的FET配置的传感器装置，并且参考装置和传感器装置的阱电势彼此电隔离。

52. 发明公开

EP3240019A1 OXIDE DERIVATIVE, METHOD FOR PRODUCING SAME, PRECURSOR OF OXIDE DERIVATIVE, SOLID-STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE ELECTRONIC DEVICE 审中-公开
标题翻译：氧化物衍生物，其制备方法，氧化物衍生物前体，固态电子器件以及制造固态电子器件的方法
公开(公告)号：EP3240019A1
公开(公告)日：2017-11-01
申请号：EP14908975.7
申请日：2014-12-24
申请人： Japan Advanced Institute of Science and Technology , Adamant Co., Ltd.
发明人： SHIMODA, Tatsuya , INOUE, Satoshi , ARIGA, Tomoki
IPC分类号： H01L21/316 , C01G33/00 , H01L21/822 , H01L21/8246 , H01L27/04 , H01L27/105
CPC分类号： C01G33/006 , C01G33/00 , C23C18/1216 , C23C18/1279 , C23C18/1283 , H01B1/08 , H01B3/10 , H01G4/10 , H01G4/33 , H01L21/822 , H01L27/04 , H01L27/105 , H01L28/40
摘要： [Problem] Provided is an oxide dielectric having superior properties, and a solid state electronic device (for example, a high pass filter, a patch antenna, a capacitor, a semiconductor device, or a microelectromechanical system) including the oxide dielectric.
[Solution] The oxide layer 30 according to the present invention includes an oxide (possibly including inevitable impurities) consisting essentially of bismuth (Bi) and niobium (Nb) and having a crystal phase of the pyrochlore-type crystal structure, in which the number of atoms of the above niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the above bismuth (Bi) is assumed to be 1.
摘要翻译：提供具有优异性能的氧化物电介质以及包含该氧化物电介质的固态电子器件（例如，高通滤波器，贴片天线，电容器，半导体器件或微机电系统）。根据本发明的氧化物层30包括基本上由铋（Bi）和铌（Nb）组成并且具有烧绿石型晶体结构的晶相的氧化物（可能包括不可避免的杂质），其中，当上述铋（Bi）的原子数被假定为1时，上述铌（Nb）的原子的数目为1.3以上且1.7以下。

53. 发明公开

EP3196599A1 SENSOR DEVICE 审中-公开
标题翻译：传感器装置
公开(公告)号：EP3196599A1
公开(公告)日：2017-07-26
申请号：EP14902248.5
申请日：2014-09-16
申请人： Hitachi Automotive Systems, Ltd.
发明人： MATSUMOTO, Masahiro , NAKANO, Hiroshi , YANAGAWA, Yoshimitsu , KOTABE, Akira
IPC分类号： G01D21/00 , H01L21/822 , H01L27/04
CPC分类号： H01L27/0255 , G01D21/00 , G01R1/36 , H01L21/822 , H01L23/552 , H01L27/0288 , H01L27/04 , H01L29/72 , H01L29/861
摘要： In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5. In addition, the signal processing integrated circuit 5 comprises: a signal processing circuit 6 that processes the output signal output from the sensor element 4; a resistance element 8 that is connected between the output terminal 11 and the signal processing circuit 6, and that is disposed on an insulating film; diode elements 9, 10 that are connected between the output terminal 11 and the ground terminal 3, and that are serially connected with each other in opposite directions; and a capacitance element 7 that is connected between the ground terminal 3 and the signal processing circuit 6 side of the resistance element 8.
摘要翻译：在传统的传感器装置中，难以同时实现汽车传感器装置的输出端所需的EMC电阻和ESD电阻。本实施例的传感器装置1包括：供电端子2，一个接地端子3; 传感器元件4，其电特性根据物理量而变化; 处理从传感器元件4输出的输出信号的信号处理集成电路5; 以及输出由信号处理集成电路5处理的输出信号的输出端子。另外，信号处理集成电路5包括：信号处理电路6，其处理从传感器元件4输出的输出信号; 连接在输出端子11和信号处理电路6之间并设置在绝缘膜上的电阻元件8; 连接在输出端子11和接地端子3之间并且在相反方向上彼此串联连接的二极管元件9,10; 以及连接在电阻元件8的接地端子3和信号处理电路6侧之间的电容元件7。

54. 发明授权

EP2822040B1 NANODEVICE AND MANUFACTURING METHOD FOR SAME 有权
标题翻译：纳米器件及其制造方法
公开(公告)号：EP2822040B1
公开(公告)日：2017-01-04
申请号：EP13755689.0
申请日：2013-02-27
申请人： Japan Science and Technology Agency
发明人： MAJIMA Yutaka , TERANISHI Toshiharu , MATSUMOTO Kazuhiko , MAEHASHI Kenzo , AZUMA Yasuo , OHNO Yasuhide , MAEDA Kosuke , HACKENBERGER Guillaume Hubert Frederic
IPC分类号： B82Y10/00 , H01L21/822 , H01L27/06 , H01L27/088 , H01L49/00 , H01L51/10
CPC分类号： H01L51/0512 , B82Y10/00 , H01L21/8221 , H01L27/04 , H01L27/0611 , H01L27/0688 , H01L27/088 , H01L29/66477 , H01L29/7613 , H01L49/006 , H01L51/102 , H01L2251/10

55. 发明公开

EP2733533A3 Etching method using block-copolymers 有权转让
标题翻译：使用嵌段共聚物蚀刻
公开(公告)号：EP2733533A3
公开(公告)日：2016-06-01
申请号：EP13189664.9
申请日：2013-10-22
申请人： IMEC , Tokyo Electron Limited
发明人： Chan, Boon Teik , Tahara, Shigeru
IPC分类号： G03F7/00
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0271 , H01L21/3065 , H01L21/3081 , H01L21/3088 , H01L27/04 , H01L51/0014 , H01L51/0017
摘要： A method (10) for lithography, the method comprising:
- Obtaining (12) a self-organizing block-copolymer layer (21) on a neutral layer overlying a substrate (23), the self-organizing block-copolymer layer (21) comprising at least two polymer components (24, 25) having mutually different etching resistances, the self-organizing block-copolymer layer (21) furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components (24, 25),
- Etching (14) selectively a first polymer component (25) of the self-organizing block-copolymer layer (21), thereby remaining a second polymer component (24),
- applying a plasma etching (16) to the neutral layer (22") using the second polymer component (24) as a mask, wherein the plasma etching (16) comprises an inert gas and H 2 .

56. 发明公开

EP2822040A4 NANODEVICE AND MANUFACTURING METHOD FOR SAME 有权
标题翻译： NANOVORRICHTUNG UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2822040A4
公开(公告)日：2015-11-11
申请号：EP13755689
申请日：2013-02-27
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： MAJIMA YUTAKA , TERANISHI TOSHIHARU , MATSUMOTO KAZUHIKO , MAEHASHI KENZO , AZUMA YASUO , OHNO YASUHIDE , MAEDA KOSUKE , HACKENBERGER GUILLAUME HUBERT FREDERIC
IPC分类号： B82Y10/00 , H01L21/822 , H01L27/06 , H01L27/088 , H01L49/00 , H01L51/10
CPC分类号： H01L51/0512 , B82Y10/00 , H01L21/8221 , H01L27/04 , H01L27/0611 , H01L27/0688 , H01L27/088 , H01L29/66477 , H01L29/7613 , H01L49/006 , H01L51/102 , H01L2251/10

57. 发明公开

EP2639829A3 Group III-V and Group IV Composite Switch 有权转让
标题翻译：第III-IV-和组IV-复合开关
公开(公告)号：EP2639829A3
公开(公告)日：2015-08-05
申请号：EP13157901.3
申请日：2013-03-05
申请人： International Rectifier Corporation
发明人： Briere, Michael A. , McDonald, Tim
IPC分类号： H01L25/07 , H01L25/18 , H01L29/20 , H01L27/04
CPC分类号： H01L27/04 , H01L25/07 , H01L25/18 , H01L29/2003 , H01L2224/16 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： In one implementation, a group III-V and group IV composite switch includes a group IV transistor in a lower active die, the group IV transistor having a source and a gate situated on a bottom side of the lower active die. The group III-V and group IV composite switch also includes a group III-V transistor in an upper active die stacked over the lower active die, the group III-V transistor having a drain, a source, and a gate situated on a top side of the upper active die. The source of the group III-V transistor is electrically coupled to a drain of the group IV transistor using a through-semiconductor via (TSV) of the upper active die.

58. 发明公开

EP2835829A3 Integrated circuit device 有权
标题翻译： Integrierte Schaltungsvorrichtung
公开(公告)号：EP2835829A3
公开(公告)日：2015-03-18
申请号：EP14179869.4
申请日：2014-08-05
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Sekine, Yurina
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： H01L27/04 , H01L21/02211 , H01L23/481 , H01L23/5223 , H01L27/0676 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si-O bond region obtained by reacting Si particles with an organic Si compound.
摘要翻译：集成电路器件包括半导体衬底，有源元件和无源元件。有源元件由半导体衬底制成。无源元件包括填充在沿着其厚度方向设置在半导体衬底中的槽或孔中的功能元件，并且电连接到有源元件。功能元件具有通过使Si颗粒与有机Si化合物反应而获得的Si-O键区域。

59. 发明公开

EP2786961A1 AGGREGATED BORON NITRIDE PARTICLES, COMPOSITION CONTAINING SAID PARTICLES, AND THREE-DIMENSIONAL INTEGRATED CIRCUIT HAVING LAYER COMPRISING SAID COMPOSITION 有权转让
标题翻译： AGGREGATE氮化硼，这些颗粒和三维集成电路的与该组合物的层组合物
公开(公告)号：EP2786961A1
公开(公告)日：2014-10-08
申请号：EP12854030.9
申请日：2012-11-29
申请人： Mitsubishi Chemical Corporation
发明人： YAMAZAKI, Masanori , ABE, Mari , MURASE, Tomohide , KAWASE, Yasuhiro , IKEMOTO, Makoto , KIRITANI, Hideki , MATSUSHITA, Yasunori
IPC分类号： C01B21/064 , C08K3/38 , C08L63/00 , C08L101/00 , C09D7/12 , C09D201/00
CPC分类号： C09K5/14 , C01B21/064 , C01B21/0648 , C01B35/146 , C01P2004/03 , C01P2004/30 , C01P2004/45 , C01P2004/50 , C01P2004/61 , C01P2004/62 , C01P2006/11 , C01P2006/12 , C01P2006/14 , C01P2006/32 , C01P2006/80 , C08G59/4042 , C08K3/38 , C08K2003/385 , C08L63/00 , H01L21/77 , H01L24/32 , H01L24/83 , H01L27/04 , H01L2924/0002 , H01L2924/12042 , H01L2924/15747 , H01L2924/15788 , Y10T156/10 , Y10T428/25 , Y10T428/2982 , H01L2924/00
摘要： To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin.
A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m 2 /g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 µm and at most 1 µm, and which are spherical, and a resin (A) having a melt viscosity at 120°C of at most 100 Pa·s.

60. 发明公开

EP2733533A2 Etching method using block-copolymers 有权转让
标题翻译： Ätzverfahrenunter Verwendung von Blockcopolymeren
公开(公告)号：EP2733533A2
公开(公告)日：2014-05-21
申请号：EP13189664.9
申请日：2013-10-22
申请人： IMEC , Tokyo Electron Limited
发明人： Chan, Boon Teik , Tahara, Shigeru
IPC分类号： G03F7/00
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0271 , H01L21/3065 , H01L21/3081 , H01L21/3088 , H01L27/04 , H01L51/0014 , H01L51/0017
摘要： A method (10) for lithography, the method comprising:
- Obtaining (12) a self-organizing block-copolymer layer (21) on a neutral layer overlying a substrate (23), the self-organizing block-copolymer layer (21) comprising at least two polymer components (24, 25) having mutually different etching resistances, the self-organizing block-copolymer layer (21) furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components (24, 25),
- Etching (14) selectively a first polymer component (25) of the self-organizing block-copolymer layer (21), thereby remaining a second polymer component (24),
- applying a plasma etching (16) to the neutral layer (22") using the second polymer component (24) as a mask, wherein the plasma etching (16) comprises an inert gas and H 2 .
摘要翻译：一种用于光刻的方法（10），所述方法包括： - 获得（12）在衬底（23）上的中性层上的自组织嵌段共聚物层（21），所述自组织嵌段共聚物层（21）所述自组织嵌段共聚物层（21）还包含通过所述至少两种聚合物组分（24,24）的微相分离形成的共聚物图案结构，所述聚合物组分（24,25）具有相互不同的抗蚀性， 25）， - 选择性地蚀刻（14）自组织嵌段共聚物层（21）的第一聚合物组分（25），从而保留第二聚合物组分（24）， - 将等离子体蚀刻（16）施加到中性使用第二聚合物组分（24）作为掩模的层（22“），其中等离子体蚀刻（16）包括惰性气体和H 2。

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