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    • 56. 发明公开
    • Method for evaluating semiconductor device error and system for supporting the same
    • 一种用于在半导体装置的评价缺陷和对应的装置的方法
    • EP1583007A3
    • 2005-10-26
    • EP05000924.0
    • 2005-01-18
    • Renesas Technology Corp.
    • Ibe, Hidefumi Hitachi, Ltd.Yahagi, Yasuo Hitachi, Ltd.Kameyama, Hideaki Hitachi, Ltd.
    • G06F17/50G11C11/412G06F17/18G01R31/30
    • G01R31/31816G01R31/002G01R31/2849G01R31/2881G01R31/30
    • When resistivity against errors caused by cosmic ray neutrons in a semiconductor device is evaluated, the storage (120) in the evaluation apparatus stores multiple spectrum data of white neutrons having different spectrum shapes, and multiple SEE counts obtained by the white neutron method using this multiple spectrum data. A computing section (100) performs processing, with respect to each spectrum data, to read out the spectrum data from the storage, divide the data into multiple energy groups, calculates and stores a total flux of each energy group. Furthermore, the computing section reads out from the storage, the SEE counts with respect to each of the multiple spectrum data and the total flux of each energy group, substitutes the SEE counts and the total flux into a simultaneous equation, where a product of matrix elements indicating the total flux of each of the energy groups as to each of the multiple spectrum data and vectors indicating the SEE cross section of each of the energy groups represents the SEE count as to each of the multiple spectrum data, and calculates the SEE cross section for each of the energy groups. Subsequently, the computing section performs a calculation so that parameters are calculated, which determine a formula of the approximate function of the SEE cross section as a function of energy, so that computed values of error counts obtained by integration of multiple spectra and the approximate function sufficiently match the actual measured values thereof. With the processing as described above, there has been achieved an error evaluation in the semiconductor device using white neutrons independent from an accelerator.
    • 当针对通过在半导体器件中的宇宙射线的中子引起的错误的电阻率进行评价,在评价装置中的存储装置(120)存储具有不同的频谱形状通过使用该多个白色中子方法得到的白色中子的多个频谱数据和多个SEE计数 光谱数据。 一种计算部(100)执行处理,对于每个光谱数据,从存储读出的谱数据,将数据划分为多个能量组,计算和存储各能量组的总通量。 进一步,运算部从存储中读出时,SEE相对于每个所述多个谱数据和每个能量组的总通量的计数,代入SEE计数和总光通量成的联立方程,矩阵的其中一个产品 关于每个所述多个谱数据和向量元素指示每个能量组的总通量指示每个能量组的SEE截面darstellt的SEE数作为给每个所述多个谱数据,并且计算SEE横 部针对每个能量组。 接着,运算部进行运算所以没有参数被计算,其中确定性矿作为能量的函数的SEE截面的近似函数的公式,所以并计算由多个光谱的积分和近似函数而获得的错误计数的值 充分匹配其实际测量值。 通过如上所述的处理,存在一种使用白色中子从独立于加速器已经达到在误差评价的半导体装置。