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51. 发明授权

EP1523097B1 Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same 有权转让
标题翻译：空气间隙型的薄膜谐振器，其制造方法及其在所述过滤器和双工器使用
公开(公告)号：EP1523097B1
公开(公告)日：2014-03-05
申请号：EP04255782.7
申请日：2004-09-22
申请人： Samsung Electronics Co., Ltd.
发明人： Song, In-sang , Ha, Byeoung-ju , Hwang, Jun-sik , Park, Yun-kwon
IPC分类号： H03H9/10 , H03H9/17 , H03H9/58 , H03H3/02
CPC分类号： H03H9/587 , H03H3/02 , H03H9/105 , H03H9/173 , Y10T29/42

52. 发明授权

EP1480335B1 Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby 有权
标题翻译：使用金属层的内部机械张力并由此产生谐振器的体声波谐振器的制造方法
公开(公告)号：EP1480335B1
公开(公告)日：2009-11-11
申请号：EP04252122.9
申请日：2004-04-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kim, Jong-seok , Choa, Sung-hoon , Song, In-sang , Hong, Young-tack
IPC分类号： H03H3/02
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/172 , Y10T29/42

53. 发明公开

EP1343249A3 Device having inductors and capacitors and a fabrication method thereof 审中-公开
标题翻译：排列与电感，电容，和制造过程
公开(公告)号：EP1343249A3
公开(公告)日：2009-09-09
申请号：EP03004397.0
申请日：2003-03-03
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Moon-chul , Song, In-sang , Hong, Young-tack , Jeong, Sung-hye , Hong, Byung-yoo
IPC分类号： H01L27/01 , H01L27/06 , H01L27/07 , H03H7/01 , H01L23/64 , H01L23/522 , H01L21/02
CPC分类号： H01L27/016 , H01L23/5223 , H01L23/5227 , H01L27/0744 , H01L28/10 , H01L28/40 , H01L2924/0002 , H03H7/00 , H03H7/0115 , H03H2001/0078 , H03H2001/0085 , H05K1/16 , H05K1/162 , H05K1/165 , H05K2201/1006 , H05K2201/10545 , Y10S438/977 , H01L2924/00
摘要： An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.

54. 发明授权

EP1598933B1 Air-gap type thin-film bulk acoustic resonator and fabrication method therefor 有权
标题翻译：空气间隙型的声音薄膜体声波和其制造方法
公开(公告)号：EP1598933B1
公开(公告)日：2009-08-12
申请号：EP05253013.6
申请日：2005-05-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Song, In-sang , Ha, Byeoung-ju 507-1401 Samsung 5th Apt. , Park, Yun-kwon , Kim, Jong-seok
IPC分类号： H03H9/17 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： An air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.

55. 发明公开

EP1750370A3 Monolithic duplexer and fabrication method thereof 有权
标题翻译：单片双工器和过程及其制备
公开(公告)号：EP1750370A3
公开(公告)日：2008-09-17
申请号：EP06253822.8
申请日：2006-07-20
申请人： Samsung Electronics Co., Ltd.
发明人： Sul, Sang-chul, 901-406 Byeokjeokgol , Kim, Chul-soo , Kim, Duck-hwan, 505-803 Hosu-maeul , Song, In-sang , Lee, Moon-chul , Jung, Kyu-dong , Shin, Jea-shik
IPC分类号： H03H9/10 , H03H3/02
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706
摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer (10), a plurality of elements (1a,1b,1c,1d) distanced from each other on a top portion of a device wafer, first sealing parts (30) formed on the top portion of the device wafer, and a plurality of first ground planes (20) formed between the plurality of elements. A cap wafer (40) is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts (42), and cavities. Second sealing parts (48) are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes (46) cover the plurality of ground posts. Via holes (50) vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals (60) are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

56. 发明公开

EP1798745A2 Pneumatic MEMS switch and method of fabricating the same 审中-公开
标题翻译： Pneumatischer MEMS Schalter und Herstellungsverfahren
公开(公告)号：EP1798745A2
公开(公告)日：2007-06-20
申请号：EP06121124.9
申请日：2006-09-22
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Che-heung , Choi, Hyung , Song, In-sang , Lee, Sang-hun , Kwon, Sang-wook , Kim, Dong-kyun , Hong, Young-tack , Kim, Jong-seok , Lee, Chang-seung
IPC分类号： H01H59/00 , H01H35/34
CPC分类号： H01H59/0009 , H01H35/346 , H01H2221/02
摘要： A pneumatic micro electro mechanical system switch includes a substrate, a pneumatic actuating unit disposed on the substrate; the pneumatic actuating unit having a plurality of variable air cavities communicating such that when one of the plurality of variable air cavities is compressed, the rest are expanded; a signal line having a plurality of switching lines, each of which passes through a corresponding one of the plurality of variable air cavities and has switching ends disposed in a spaced-apart relation with each other in the corresponding one of the plurality of variable air cavities; a movable switching unit to connect the first and the second switching ends of each of the plurality of switching lines if one of the plurality of variable air cavities is compressed; and a driving unit to drive the pneumatic actuating unit so as to selectively compress the plurality of variable air cavities.
摘要翻译：气动微机电系统开关包括基板，设置在基板上的气动执行单元; 所述气动致动单元具有多个可变空气腔，所述多个可变空气腔连通，使得当所述多个可变气腔中的一个被压缩时，其余部分被膨胀; 信号线具有多个切换线，每个切换线通过多个可变空气腔中的对应的一个可变空气腔，并且具有在多个可变气腔中的相应一个空腔中相互间隔开设置的切换端 ; 如果多个可变空气腔中的一个被压缩，则可移动切换单元连接多个切换线中的每一个的第一和第二切换端; 以及驱动单元来驱动气动致动单元，以选择性地压缩多个可变空气腔。

57. 发明公开

EP1471637A3 Method for fabricating cantilevered type film bulk acoustic resonator and film bulk acoustic resonator fabricated by the same 有权
标题翻译：自支撑其制备薄膜体声波谐振器（FBAR）和方法
公开(公告)号：EP1471637A3
公开(公告)日：2007-03-28
申请号：EP04251968.6
申请日：2004-04-01
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kim, Sang-chae, 902-2001 Jugong Apartment , Song, In-sang , Hong, Young-tack
IPC分类号： H03H9/17 , H01L41/047
CPC分类号： H03H3/02 , H03H9/172 , H03H2003/022 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer (110) on a substrate (100), providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode (120) on part of the sacrificial layer on part of the dielectric layer (110); providing a piezoelectric layer (130) on the bottom electrode (120); patterning a top electrode (140) on the piezoelectric layer (120); and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap (170) between the bottom electrode (120) and the dielectric layer (170) may be simply fabricated.

58. 发明公开

EP1750370A2 Monolithic duplexer and fabrication method thereof 有权
标题翻译： Monolithischer Duplexer和Verfahren zu seiner Herstellung
公开(公告)号：EP1750370A2
公开(公告)日：2007-02-07
申请号：EP06253822.8
申请日：2006-07-20
申请人： Samsung Electronics Co., Ltd.
发明人： Sul, Sang-chul, 901-406 Byeokjeokgol , Kim, Chul-soo , Kim, Duck-hwan, 505-803 Hosu-maeul , Song, In-sang , Lee, Moon-chul , Jung, Kyu-dong , Shin, Jea-shik
IPC分类号： H03H9/10 , H03H3/02
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706
摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer (10), a plurality of elements (1a,1b,1c,1d) distanced from each other on a top portion of a device wafer, first sealing parts (30) formed on the top portion of the device wafer, and a plurality of first ground planes (20) formed between the plurality of elements. A cap wafer (40) is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts (42), and cavities. Second sealing parts (48) are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes (46) cover the plurality of ground posts. Via holes (50) vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals (60) are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.
摘要翻译：一种单片双工器及其制造方法。单片双工器包括器件晶片（10），在器件晶片的顶部彼此远离的多个元件（1a，1b，1c，1d），形成在器件晶片的顶部上的第一密封部分（30）器件晶片和形成在多个元件之间的多个第一接地平面（20）。还提供了具有用于封装器件晶片，多个突出部分，多个接地柱（42）和空腔的蚀刻区域的盖片（40）。第二密封部（48）形成在突出部的底部，多个第二接地面（46）覆盖多个接地柱。通孔（50）垂直地穿过盖晶片以连接到多个第二接地平面，并且接地端子（60）形成在通孔的顶部上。第一密封部件和第一接地平面分别附接到第二密封部件和第二接地平面。

59. 发明公开

EP1689080A2 Film bulk acoustic resonator and a method for manufacturing the same 有权转让
标题翻译： AkustischerDünnschicht-Volumenwellenresonator und sein Herstellungsverfahren。
公开(公告)号：EP1689080A2
公开(公告)日：2006-08-09
申请号：EP06000147.6
申请日：2006-01-04
申请人： Samsung Electronics Co., Ltd.
发明人： Ha, Byeoung-ju , Hong, Seog-woo , Song, In-sang , Choi, Hyung
IPC分类号： H03H9/17 , H03H3/02
CPC分类号： H03H3/02 , H03H9/174 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).
摘要翻译：一种薄膜体声波谐振器（FBAR），包括：具有通过其蚀刻的气隙（111）的衬底（110）具有第一电极（141），压电膜（143）和第二电极（145）的共振部分（141），其依次层叠在气隙上方; 以及设置在所述气隙和所述共振部之间的耐蚀刻层，以限制形成所述气隙的蚀刻深度，从而防止对所述共振部（140）的损坏。

60. 发明公开

EP1598934A2 Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权转让
标题翻译：过滤器Dünnfilmresonatorenund Induktor，Duplexer und deren Herstellungsverfahren
公开(公告)号：EP1598934A2
公开(公告)日：2005-11-23
申请号：EP05253005.2
申请日：2005-05-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Song, In-sang , Ha, Byeoung-ju , Park, Yun-kwon , Kim, Jong-seok , Kim, Duck-hwan , Nam, Kuang-woo , Park, Hae-seok , Hong, Seog-woo
IPC分类号： H03H9/58 , H03H9/70 , H03H9/17 , H03H9/05 , H03H3/02
CPC分类号： H03H9/564 , H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/173 , H03H9/568 , H03H9/605 , H03H9/706 , Y10T29/42
摘要： A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.
摘要翻译：提供了使用气隙型膜体声波谐振器的滤波器。本发明的滤波器包括：基板，其上形成有第一端口，第二端口和接地端口，以连接到外部端子; 至少一个第一膜体积声谐振器将第一端口与基板上的第二端口串联连接; 至少一个第二膜体声波谐振器并联连接到形成在所述第一端口和所述第二端口之间的互连节点; 以及将所述第二膜体声波谐振器串联连接到所述接地端口的至少一个电感器。包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。因此，可以通过简化的过程制造小尺寸滤波器。

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